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http://dx.doi.org/10.4313/JKEM.2002.15.4.319

Reduce of Etching Damage of PZT Thin Firms with Addition of Ar and O2 in Cl2/CF4 Plasma  

강명구 (중앙대학교 전자전기공학부)
김경태 (중앙대학교 전자전기공학부)
김창일 (중앙대학교 전자전기공학부)
Publication Information
Journal of the Korean Institute of Electrical and Electronic Material Engineers / v.15, no.4, 2002 , pp. 319-324 More about this Journal
Abstract
In this study, the reduce of plasma etching damage in PZT thin film with addictive gas and re-annealing after etching have been investigated. The PZT thin films were etched as a function of $Cl_2/CF_4$ with addition of Ar and $O_2$ with inductively coupled plasma. The etch rates of PZT thin films were 1450 ${\AA}/min$ at 30% additive Ar and 1100 ${\AA}/min$ at 10% auditive $O_2$ into $Cl_2/CF_4$ gas mixing ratio of 8/2. In order to reduce plasma damage of PZT thin films after etching, the etched PZT thin films were re-annealed at various temperatures at $O_2$ atmosphere. From the hysteresis curries, the ferroelectric properties are improved by $O_2$ re-annealing process. The improvement of ferroelectric behavior at annealed PZT films is consistent wish the increase of the (100) and (200) PZT peaks revealed by x-ray diffraction (XRD). From x ray photoelectron spectroscopy (XPS) analysis, the intensity of Pb-O, Zr-O and Ti-O peak are increased and the chemical residue peak is reduced by $O_2$ re-annealing. The ferroelectric behavior consistent with the dielectric nature of $Ti_xO_y$ is recovered by $O_2$ recombination during rapid thermal annealing process.
Keywords
PZT; Etch; Ferroelectric; Plasma; Damage;
Citations & Related Records
Times Cited By KSCI : 3  (Citation Analysis)
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