• Proceedings of the KIEE Conference
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• 2006.04a
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• pp.267-269
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• 2006

Recently, flash memories are one of best media to support portable computer's storages in mobile computing environment. The features of non-volatility, low power consumption, and fast access time for read operations are sufficient grounds to support flash memory as major database storage components of portable computers. However, we need to improve traditional Indexing scheme such as B-Tree due to the relatively slow characteristics of flash operation as compared to RAM memory. In order to achieve this goal, we devise a new indexing scheme called F-Tree. F-Tree improves tree operation performance by compressing pointers and keys in tree nodes and rewriting the nodes without a slow erase operation in node insert/delete processes.

• Journal of Information Technology Applications and Management
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• v.13 no.4
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• pp.257-271
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• 2006

Recently, flash memories are one of best media to support portable computer's storages in mobile computing environment. The features of non-volatility, low power consumption, and fast access time for read operations are sufficient grounds to support flash memory as major database storage components of portable computers. However, we need to improve traditional Indexing scheme such as B-Tree due to the relatively slow characteristics of flash operation as compared to RAM memory. In order to achieve this goal, we devise a new indexing scheme called F-Tree. F-Tree improves tree operation performance by compressing pointers and keys in tree nodes and rewriting the nodes without a slow erase operation in node insert/delete processes. Based on the results of the performance evaluation, we conclude that F-Tree indexing scheme outperforms the traditional indexing scheme.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.751-754
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• 2000

When charge-trap SONOS cells are used flash memory, the tunneling program/erase condition to minimize the generation of interface traps was investigated. SONOSFET NVSM cells were fabricated using 0.35$\mu\textrm{m}$ standard memory cell embedded logic process including the ONO cell process. based on retrograde twin-well, single-poly, single metal CMOS process. The thickness of ONO triple-dielectric for memory cell is tunnel oxide of 24${\AA}$, nitride of 74 ${\AA}$, blocking oxide of 25 ${\AA}$, respectively. The program mode(Vg: 7,8,9 V, Vs/Vd: -3 V, Vb: floating) and the erase mode(Vg: -4,-5,-6 V, Vs/Vd: floating, Vb: 3V) by modified Fowler-Nordheim(MFN) tunneling were used. The proposed programming condition for the flash memory of SONOSFET NVSM cells showed less degradation($\Delta$Vth, S, Gm) characteristics than channel MFN tunneling operation. Also the program inhibit conditions of unselected cell for separated source lines NOR-tyupe flash memory application were investigated. we demonstrated that the program disturb phenomenon did not occur at source/drain voltage of 1 V∼4 V and gate voltage of 0 V∼4.

• Journal of Korea Multimedia Society
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• v.12 no.12
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• pp.1710-1717
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• 2009

Flash memory has become the most important storage media in mobile devices along with its attractive features such as low power consumption, small size, light weight, and shock resistance. However, a flash memory can not be written before erased because of its erase-before-write characteristic, which lead to some garbage collection when there is not enough space to use. In this paper, we propose a novel garbage collection scheme, called block-level buffer garbage collection. When it is need to do merge operation during garbage collection, the proposed scheme does not merge the data block and corresponding log block but also search the block-level buffer to find the corresponding block which will be written to flash memory in the next future, and then decide whether merge it in advance or not. Our experimental results show that the proposed technique improves the flash performance up to 4.6% by reducing the unnecessary block erase numbers and page copy numbers.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.41 no.10
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• pp.1167-1175
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• 2016

This paper proposes an efficient page-level mapping algorithm that reduces the erase count in the FTL for flash memory systems. By maintaining the weight for each write request in the request buffer, the proposed algorithm estimates the degree of temporal locality for each incoming write request. To exploit temporal locality deliberately for determination of hot request, the degree of temporal locality should be much higher than the reference point determined experimentally. While previous LRU algorithm treats a new write request to have high temporal locality, the proposed algorithm allows write requests that are estimated to have high temporal locality to access hot blocks to store hot data intensively. The pages are more frequently updated in hot blocks than warm blocks. A hot block that has most of invalid pages is always selected as victim block at Garbage Collection, which results in delayed erase operation and in reduced erase count. Experimental results show that erase count is reduced by 9.3% for real I/O workloads, when compared to the previous LRU algorithm.

• Journal of Information Technology Applications and Management
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• v.12 no.4
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• pp.59-70
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• 2005

Flash memories are one of best media to support portable computer's storages in mobile computing environment. The features of non-volatility, low power consumption, and fast access time for read operations are sufficient grounds to support flash memory as major database storage components of portable computers. However, we need to improve traditional transaction management scheme due to the relatively slow characteristics of flash operation as compared to RAM memory. in order to achieve this goal, we devise a new scheme called Flash Two Phase Locking (F2PL) scheme for efficient transaction processing. F2Pl improves transaction performance by allowing multi version reads and efficiently handling slow flash write/erase operation in lock management process. We also propose a simulation model to show the performance of F2PL. Based on the results of the performance evaluation, we conclude that F2PL scheme outperforms the traditional scheme.

• Korean Journal of English Language and Linguistics
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• v.1 no.1
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• pp.145-162
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• 2001

The operation Move is defined in Chomsky (1999, 2000) as a composite operation consisting of three components: Agree, Identify and Merge, taking Agree as a necessary condition for Move. Therefore, I call this definition of Move as the Agree-based Move. In this paper, I argue that the Agree-based approach to Move cannot be maintained; I claim that the Selection-based approach to Move, in which the EPP-feature is analyzed as an s-selectional property of a head, offers a more natural account of the sentences under consideration. I believe that the three components of Move as defined in (6) happen to co-occur in the derivation of certain sentences, as the composite transformation called Passivization does in the derivation of a passive sentence like “the city was destroyed by the enemy.” On the basis of these observations, I conclude that Agree and Move should be regarded as separate computational operations; the task of Agree is to erase uninterpretable features of both probe and goal, and that of Move is to satisfy the EPP-feature, which should be taken as an s-selectional feature.

• JSTS:Journal of Semiconductor Technology and Science
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• v.15 no.2
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• pp.286-291
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• 2015

For highly scalable NAND flash memory applications, a compact ($4F^2/cell$) nonvolatile memory architecture is proposed and investigated via three-dimensional device simulations. The back-channel program/erase is conducted independently from the front-channel read operation as information is stored in the form of charge at the backside of the channel, and hence, read disturbance is avoided. The memory cell structure is essentially equivalent to that of the fully-depleted transistor, which allows a high cell read current and a steep subthreshold slope, to enable lower voltage operation in comparison with conventional NAND flash devices. To minimize memory cell disturbance during programming, a charge depletion method using appropriate biasing of a buried back-gate line that runs parallel to the bit line is introduced. This design is a new candidate for scaling NAND flash memory to sub-20 nm lateral dimensions.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.17 no.4
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• pp.143-148
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• 2017

Flash Memory which is light and strong external shock as storage of small electronics like smartphone, digital camera, car black box has been widely used. Since the operation speed of the read operation and the write operation are different from each other, and the flash memory has the feature that it is not possible to overwrite, the delete operation is added to solve these problems. Wear-leveling must also be considered, since the number of erase times of the flash memory is limited. Many studies have been conducted on the substitutional algorithms of flash memory based on these characteristics of recent flash memories. So, to solve the problem that has existing buffer replacement algorithm this thesis divide page into 6 groups and when proposed algorithm select victim page, it consider reference page frequency and page recency.

• The KIPS Transactions:PartD
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• v.19D no.2
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• pp.161-186
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• 2012

Recently, the flash memory consistently increases the storage capacity while the price of the memory is being cheap. This makes the mass storage SSD(Solid State Drive) popular. The flash memory, however, has a lot of defects. In order that these defects should be complimented, it is needed to use the FTL(Flash Translation Layer) as a special layer. To operate restrictions of the hardware efficiently, the FTL that is essential to work plays a role of transferring from the logical sector number of file systems to the physical sector number of the flash memory. Especially, the poor performance is attributed to Erase-Before-Write among the flash memory's restrictions, and even if there are lots of studies based on the log block, a few problems still exists in order for the mass storage flash memory to be operated. If the FAST based on Log Block-Based Flash often is generated in the wide locality causing the random writing, the merge operation will be occur as the sectors is not used in the data block. In other words, the block thrashing which is not effective occurs and then, the flash memory's performance get worse. If the log-block makes the overwriting caused, the log-block is executed like a cache and this technique contributes to developing the flash memory performance improvement. This study for the improvement of the random writing demonstrates that the log block is operated like not only the cache but also the entire flash memory so that the merge operation and the erase operation are diminished as there are a distinct mapping table called as the offset mapping table for the operation. The new FTL is to be defined as the XAST(extensively-Associative Sector Translation). The XAST manages the offset mapping table with efficiency based on the spatial locality and temporal locality.