• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.164-168
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• 2007

Deformation of a shadow mask is one of the problems encountered during the deposition of organic materials for manufacturing large size OLED. The larger the glass substrate, the larger the shadow mask becomes. But as the size of the shadow mask increases, its deformation becomes more severe, thereby making it difficult to deposit organic materials in a precise pattern on a substrate. In this paper, a new type mask-frame structure is proposed. The proposed mask-frame structure making a curved mask has the ability of reducing drooping of mask. The test frame is fabricated and evaluation experiments are performed.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2007.06a
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• pp.207-210
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• 2007

We prepared Al doped ZnO/Ag/Al doped ZnO on the polymer substrate by Facing Target Sputtering (FTS). FTS featured Facing Target Sputtering featured that deposition is stable at the low pressure, it has high plasma density and suppresses the substrate damage from energetic particles. We fixed to 50nm up and down thickness of AZO layer, respectively and that of intermediate Ag layer was adjusted with deposition time. In the result, AZO/Ag/AZO multilayer thin films have much better electrical conductivity than AZO single layer thin film. As increasing the thickness of Ag layer, the transmittance decreased.

• Journal of the Korean Ceramic Society
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• v.36 no.6
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• pp.583-589
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• 1999

In the fabrication of ceramic chip couples for high frequency application such as the mobile communication equipment the formation of electrode lines and Ag diffusion were investigated with heat treatment conditions for removing organic binders. The deformation and densification of the electrode line greatly depended on the binder burnout process due to the overlapped temperature zone near 400$^{\circ}C$ of the binder dissociation and the solid phase sintering of the silver electrode. Ag ions were diffused into the glass ceramic substrate. The Ag diffusion was led by the glassy phase containing Pb ions rather than by the crystalline phase containing Ca ions. The fact suggests that the Ag diffusion could be controlled by managing the composition of the glass ceramic substrate.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2003.06a
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• pp.1018-1021
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• 2003

A scratch tester was developed to evaluate the adhesive strength at interface between thin film and substrate(silicon wafer). Under force control, the scratch tester can measure the normal and the horizontal forces simultaneously as the probe tip of the equipment approaches to the interface between thin film and substrate of wafer. The capacity of each component of force sensor is 0.1 N ∼ 100 N. In addition, the tester can detect the signal of elastic wave from AE sensor(frequency range of 900 kHz) attached to the probe tip and evaluate the bonding strength of interface. Using the developed scratch tester. the feasibility test was performed to evaluate the adhesive strength of semiconductor wafer.

• Proceedings of the KSME Conference
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• 2003.11a
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• pp.1448-1452
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• 2003

A scratch tester was developed to evaluate the adhesive strength at interface between thin-film and substrate(silicon wafer). Under force control, the scratch tester can measure the normal and the tangential forces simultaneously as the probe tip of the equipment approaches to the interface between thin-film and substrate of wafer. The capacity of each component of force sensor is 0.1 N ${\sim}$ 100 N. In addition, the tester can detect the signal of elastic wave from AE sensor(frequency range of 900 kHz) attached to the probe tip and evaluate the bonding strength of interface. Using the developed scratch tester, the feasibility test was performed to evaluate the adhesive strength of thin-film.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1393-1398
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• 2009

We once have announced that we developed a horizontal large-area alignment system with an alignment accuracy of < ${\pm}3{\mu}m$ and an alignment time of < 30 seconds, a core process module for RGB direct pattering by using a fine metal mask, which can process a Gen 4 ($730{\times}920mm^2$) substrate for high resolution OLED products. In this article, we presents a brand-new vertical alignment system for a even larger substrate of Gen 5 and beyond which can provide a better alignment accuracy and a higher throughput. The newly developed system exhibits an alignment accuracy of < ${\pm}2{\mu}m$ and an alignment time of < 20 seconds which, we believe, can open a new era for manufacturing large-size OLED monitors and TVs.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2005.09a
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• pp.89-92
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• 2005

The AIN/AI thin films were prepared at various conditions, such as $N_2$ gas flow rate [$N_2(N_2+Ar)$] from 0.6 to 0.9, a substrate temperature ranging from room temperature to $300^{\circ}C$ and working pressure 1mTorr. We estimated crystallographic characteristics and c-axis preferred orientations of AIN/AI thin films as function of AI electrode surface roughness. The optimal processing conditions for AI electrode were found at substrate temperature of $300^{\circ}C$ sputtering power of 100W and a working pressure of 2mTorr. In these conditions, we obtained the c-axis preferred orientation of $AIN/AI/SiO_2/Si$ thin film about 4 degree.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.649-652
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• 1992

ECR(Electron Cyclotron Resonance) occure at ${\omega}_c$=${\omega}$, ${\omega}_c$:electron cycltron frequency, ${\omega}$:electromagnetic wave frequency. ECR system have several merit, 1) power transefer efficiency 2) low neutral gas pressure (below 1 mTorr) 3) high plasma density($10^{12}$ $cm^{-3}$). It is applicated variously in the field of semiconductor and new materials as the manufacturing equipment. Magnetic field in ECR system contruct resonance layer (${\omega}$=2.45GHz, $B_z$=875 Gauss) and control plasma. Plasma is almost generated at resonance layer. If the distance between substrate and resonance layer is short, uniformity of plasma is related with profile of resonance layer. Plasma have the property "Cold in Field", so directonality of magnetic field is one of the control factors of anisotropic etching. In this study, we calculate B field and flux line distribution, optimize geometry and submagnet current and improve of magnetic field directionality (99.9%) near substrate. For the purpose of calculation, vector potential A(r,z) and magnetic field B(r,z), green function and numerical integration is used. Object function for submagnet optimization is magnetic field directionality on the substrate and Powell method is used as optimization skim.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.45 no.8
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• pp.41-46
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• 2008

This paper conducts the research on the variation in the characteristics of the resonance and impedance of the metallic parallel plates due to the replacement of the normal dielectric substrate by the metamaterial. The ENG(${\epsilon}<0$), MNG(${\mu}<0}$) and DNG(${\epsilon},{\mu}<0$) types of metamaterial as well as the DPS(Double Positive) material are taken into consideration a full-wave modal analysis method known for accurate computation, as the SRR-kind of Lorentz model for permittivity and metal wire-periodic array-kind of Drude model for permeability, and the behaviors of parallel plates' resonance mode and impedance are observed. Based upon the observation, the design guidelines for the substrate can be addressed regrading how to suppress the parallel plates' spurious resonance modes that degrade the quality of the electronic equipment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.05c
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• pp.291-294
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• 2003

The circuit substrate was made from the Low Temperature Cofired Ceramics(LTCC) that a $\varepsilon_\gamma$ was 7.8. Accumulated Varactor and the low noise transistor which were a Surface Mount Device-type element on LTCC substrate. Let passive element composed R, L, C with strip-line of three dimension in the multilayer substrate circuit inside, and one structure accumulate band-pass filter, resonator, a bias line, a matching circuit, and made it. Used Screen-Print process, and made Strip-line resonator. A design produced and multilayer-type VCO(Voltage Controlled Oscillator), and recognized a characteristic with the Spectrum Analyzer which was measurement equipment. Measured multilayer structure VCO is oscillation frequency 1292[MHz], oscillation output -28.38[dBm], hamonics characteristic -45[dBc] in control voltage 1.5[V], A phase noise is -68.22[dBc/Hz] in 100 KHz offset frequency. The oscillation frequency variable characteristic showed 30[MHz/V] characteristic, and consumption electric current is approximately 10[mA].