• 제목/요약/키워드: engineering material

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시험평가법을 이용한 IRB 면진장치 롤러 설계 : Part 2. 소재 열처리 (Roller Design of IRB Seismic Isolation Device Using Test Evaluation : Part II. Heat Treatment of Material)

  • 박영기;하성훈;성민상;전준철;최승복
    • 한국소음진동공학회논문집
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    • 제23권4호
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    • pp.332-337
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    • 2013
  • This paper presents a subsequent research work on the roller design of IRB(isolation roller bearing) seismic isolation device presented in Part 1 by focusing on heat treatment. The hardness and friction factor are very important factors of material and after-treatment process selection. Normally, roller bearing consists of roller and retainer. The roller gets high pressure constantly, while the retainer gets tensile and compressive stress. Therefore, sensitive material selection and heat treatment of each part is quite important. In this experimental evaluation, carbon steel, chrome special steel and others are employed and their characteristics after heat treatment are identified. Each material is prepared by refining high frequency heat treatment. The friction factor and static load capacity of manufactured material are experimentally identified and destructive test of material is processed. Optimal material and heat treatment conditions for IRB roller bearing are determined based on experiment results.

인쇄용 페이스트의 조성변화가 탄소나노튜브 캐소드의 전계방출 특성에 미치는 영향 (Effects of Materials Composition in CNT Paste on Field Emission Properties in Carbon Nanotube Cathodes)

  • 최우석;신허영;김동희;안병건;정원섭;이동구;조영래
    • 한국재료학회지
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    • 제13권10호
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    • pp.663-667
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    • 2003
  • The effects of paste materials on field emission properties in a carbon nanotube(CNT) cathode were investigated for high-efficient field emission displays. The major components in CNT paste for screen printing were a metallic Ag-paste, a dielectric glass-frit and CNT ink. The emission current from the cathode by an electron tunneling effect increased with an increase in the dielectric material fraction in the CNT paste, which is related to an increase of field enhancement factor in Fowler-Nordheim equation. The surface treatment used, after soft baking of the screen-printed CNT films, greatly affected the decrease in the turn-on field in CNT cathode and the uniformity of emission sites over the entire CNT film area.

Issues with the electrical characterization of graphene devices

  • Lee, Byoung-Hun;Lee, Young-Gon;Jung, Uk-Jin;Kim, Yong-Hun;Hwang, Hyeon-Jun;Kim, Jin-Ju;Kang, Chang-Goo
    • Carbon letters
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    • 제13권1호
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    • pp.23-28
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    • 2012
  • Graphene is an attractive material for device applications, but device characteristics are very unstable because the graphene is very sensitive to environmental factors such as charges nearby the graphene, metal contacts, defects, contaminants and other adsorbates. Since the interactions between graphene and environmental factors affect the electrical characteristics of graphene devices, the interpretation of electrical characteristics as simple as current-voltage curves is non-trivial, despite the common practice of using well known electrical characterization methods that have been used in silicon MOSFET. This paper addresses major obstacles in the electrical characterization of graphene devices and offers countermeasures to improve the accuracy of electrical characterization methods.

생체모방기술을 이용한 Boron Nitride /PMMA 복합체 제조 (Biomimetic Preparation of Boron Nitride /PMMA Composite)

  • 남경목;이윤주;김보연;권우택;김수룡;신동근;김영희
    • 한국세라믹학회지
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    • 제51권2호
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    • pp.103-106
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    • 2014
  • Nacre is an organic-inorganic composite material; it is composed of $CaCO_3$ platelet and protein. The microstructure of nacre is a matrix that is similar to bricks and mortar. Technology inspired by nature is called biomimetic technology. In this study, to make high thermal conducting ceramic composite materials using biomimetic technology, a porous green body was prepared with BN platelets. PMMA was infiltrated into the porous green body to make a composite. The microstructure of the composite was observed with FESEM, and the thermal properties were measured. The thermal conductivity of the prepared organic-inorganic composite was 4.19 $W/m{\cdot}K$.

Enhanced thermal-mechanical properties of rolled tungsten bulk material reinforced by in situ nanosized Y-Zr-O particles

  • Gang Yao;Hong-Yu Chen;Lai-Ma Luo;Xiang Zan;Yu-Cheng Wu
    • Nuclear Engineering and Technology
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    • 제56권6호
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    • pp.2141-2152
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    • 2024
  • Tungsten is the most promising plasma facing material for fusion reactors. Rolled W-Y2(Zr)O3 bulk material has been successfully produced in this study for future fusion engineering applications. The introduction of Zr is conducive to the refinement of the second phase particles. Nano-sized Y-Zr-O particles are observed in the powder and bulk samples. Related results show that the Y-Zr-O particle dispersion distribution improves the heat load resistance of W-Y2(Zr)O3 composite material. For four-point bend experiments in the same sampling direction, the DBTT of W-Y2(Zr)O3 composite materials is lower compared to the pure tungsten. For the same material, the DBTT of the material was selected for testing along the RD direction is lower compared to the material was selected for testing along the TD direction. Findings of this study provide suggestions for the subsequent industrial preparation of nanoscale particle-doped tungsten materials.

New Generation Multijunction Solar Cells for Achieving High Efficiencies

  • Lee, Sunhwa;Park, Jinjoo;Kim, Youngkuk;Kim, Sangho;Iftiquar, S.M.;Yi, Junsin
    • Current Photovoltaic Research
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    • 제6권2호
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    • pp.31-38
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    • 2018
  • Multijunction solar cells present a practical solution towards a better photovoltaic conversion for a wider spectral range. In this review, we compare different types of multi-ijunction solar cell. First, we introduce thin film multijunction solar cell include to the thin film silicon, III-V material and chalcopyrite material. Until now the maximum reported power conversion efficiencies (PCE) of solar cells having different component sub-cells are 14.0% (thin film silicon), 46% (III-V material), 4.4% (chalcopyrite material) respectively. We then discuss the development of multijunction solar cell in which c-Si is used as bottom sub-cell while III-V material, thin film silicon, chalcopyrite material or perovskite material is used as top sub-cells.

Ge-Se-Te Chalcogenide 물질의 열적, 전기적 특성에 관한 연구 (A study for thermal and electrical properties of Ge-Se-Te Chalcogenide materials)

  • 남기현;박형관;김재훈;구상모;정홍배
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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    • pp.33-34
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    • 2008
  • $Ge_1Se_1Te_2$ chalcogenide amorphous materials was prepared by the conventional melt-quenching method. Samples were prepared by e-beam evaporator system and thermal evaporator technique. The thermal properties were investigated in the temperature range 300K-400K and the electrical properties were studied in the voltage range from 0V to 3V below the corresponding glass trasition temperature. The obtained results agree with the electrothermal model for Phase-Change Random Access Memory.

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무전해법으로 Slide Glass 위에 도금된 Ni층의 접착력에 미치는 열처리의 영향 (Effect of Heat Treatment on the Adhesive Strength of Electoless Nickel Deposits)

  • 현영민;유성렬;윤정윤;김보영;김선지;탁송희;김희산
    • 한국표면공학회지
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    • 제44권6호
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    • pp.246-249
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    • 2011
  • Surface modification before coating nickel by coupling agents and/or etchant of glass did not provide enough adhesive strength of electroless nickel deposits on glass. Effect of heat treatments on hardness as well as adhesion of nickel deposits was studied by using tape test for adhesion, nanoindenter for hardness and glancing angle x-ray diffractometer (GAXRD) for phase characterization. Heat treatment improved hardness as well as adhesion. XRD results give that the improvements of adhesion and hardness are due to the formation of $NiSiO_4$ around the interface between the nickel deposits and the glass and the precipitation of $Ni_3P$ causing precipitation hardening, respectively. The details in effects of heat treatment on adhesion and hardness are described here.

The effect of negative bias stress stability in high mobility In-Ga-O TFTs

  • Jo, Kwang-Min;Sung, Sang-Yun;You, Jae-Lok;Kim, Se-Yun;Lee, Joon-Hyung;Kim, Jeong-Joo;Heo, Young-Woo
    • 한국표면공학회:학술대회논문집
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    • 한국표면공학회 2013년도 춘계학술대회 논문집
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    • pp.154-154
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    • 2013
  • In this work, we investigated the characteristics and the effects of light on the negative gate bias stress stability (NBS) in high mobility polycrystalline IGO TFTs. IGO TFT showed a high drain current on/off ratio of ${\sim}10^9$, a field-effect mobility of $114cm^2/Vs$, a threshold voltage of -4V, and a subthresholdslpe(SS) of 0.28V/decade from log($I_{DS}$) vs $V_{GS}$. IGO TFTs showed large negative $V_{TH}$ shift(17V) at light power of $5mW/cm^2$ with negative gate bias stress of -10V for 10000seconds, at a fixed drain voltage ($V_{DS}$) of 0.5V.

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