• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.97-98
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• 2009

Tunneling barrier engineered charge trap flash (TBE-CTF) memory capacitor were fabricated using the tunneling barrier engineering technique. Variable oxide thickness (VARIOT) barrier and CRESTED barrier consisting of thin $SiO_2$ and $Si_3N_4$ dielectrics layers were used as engineered tunneling barrier. The charge trapping characteristic with different metal gates are also investigated. A larger memory window was achieved from the TBE-CTF memory with high workfunction metal gate.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.344-344
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• 2010

A capacitor with engineered tunnel barrier composed of High-k materials has been fabricated. Variable oxide thickness (VARIOT) barrier consisting of thin SiO2/HfO2/Al2O3 (2/1/3 nm) dielectric layers were used as engineered tunneling barrier. We studied the electrical characteristics of multi stacked tunnel layers for various RTA (Rapid Thermal Anneal) and FGA (Forming Gas Anneal) temperature.

• Nuclear Engineering and Technology
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• 제54권11호
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• pp.4005-4012
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• 2022

As high-level radioactive waste (HLW) generated from nuclear power plants is harmful to the human body, it must be safely disposed of by an engineered barrier system consisting of disposal canisters and buffer and backfill materials. A gap exists between the canister and buffer material in a HLW repository and between the buffer material and natural rock-this gap may reduce the water-blocking ability and heat transfer efficiency of the engineered barrier materials. Herein, the basic characteristics and thermal properties of granular bentonite, a candidate gap-filling material, were investigated, and their effects on the temperature change of the buffer material were analyzed numerically. Heat transfer by air conduction and convection in the gap were considered simultaneously. Moreover, by applying the Korean reference disposal system, changes in the properties of the buffer material were derived, and the basic design of the engineered barrier system was presented according to the gap filling material (GFM). The findings showed that a GFM with high initial thermal conductivity must be filled in the space between the buffer material and rock. Moreover, the target dry density of the buffer material varied according to the initial wet density, specific gravity, and water content values of the GFM.

• 터널과지하공간
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• 제17권6호
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• pp.464-474
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• 2007

고준위폐기물처분장의 성능 및 안전성 향상을 위해서 공학적방벽(engineered barrier)에 대한 실증이 필요하다. 우리나라 기준처분시스템에 대한 엔지니어링 규모의 실험장치(KENTEX)를 제작 설치하고, 공학적방벽에서의 열-수리-역학적 거동 규명을 위한 실증실험을 수행하였다. KENTEX 실험은 2005년 5월 31일에 시작되어 현재 성공적으로 진행 중에 있으며, 지금까지 얻어진 실험결과로부터 공학적방벽에서의 열-수리-역학적 거동에 대한 중간결론을 얻을 수 있었다. 벤토나이트 블록 내 온도는 실험 시작 후 수 주 만에 정상상태에 도달하였고, 온도분포는 히터에 가까울수록 높고 멀어질수록 낮은 값을 보였다. 수분함량은 히터 쪽보다는 지하수가 유입되는 실린더 벽면 부근에서 높은 값을 가졌고, 건조-습윤 과정에 의한 벤토나이트 블록의 수화는 측정위치에 따라 달랐다. 실험기간 동안 벤토나이트 블록에 작용하는 압력은 블록의 포화도 (그 결과, 팽윤압)이 증가할수록 증가하였다. 히터 부근에서는 벤토나이트의 열응력이나 블록 공극 내 증기압도 중요한 역할을 하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 추계학술대회 논문집
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• pp.56-56
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• 2009

In this study, we fabricated the engineered $SiO_2/Si_3N_4/SiO_2$(ONO) tunnel barrier with high-k $HfO_2$ trapping layer for application high performance flash MLC(Multi Level Cell). As a result, memory device show low operation voltage and stable memory characteristics with large memory window. Therefore, the engineered tunnel barrier with ONO stacks were useful structure would be effective method for high-integrated MLC memory applications.

• 한국전기전자재료학회논문지
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• 제22권1호
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• pp.17-21
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• 2009

The electrical characteristics of band-gap engineered tunneling barriers consisting of thin $SiO_2$ and $Si_3N_4$ dielectric layers were investigated for nonvolatile memory device applications. The band structure of band-gap engineered tunneling barriers was studied and the effectiveness of these tunneling barriers was compared with the conventional tunneling $SiO_2$ barrier. The band-gap engineered tunneling barriers composed of thin $SiO_2$ and $Si_3N_4$ layers showed a lower operation voltage, faster speed and longer retention time than the conventional $SiO_2$ tunnel barrier. The thickness of each $SiO_2$ and $Si_3N_4$ layer was optimized to improve the performance of non-volatile memory.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2009년도 하계학술대회 논문집
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• pp.133-133
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• 2009

It is desirable to choose a high-k material having a large band offset with the tunneling oxide and a deep trapping level for use as the charge trapping layer to achieve high PIE (Programming/erasing) speeds and good reliability, respectively. In this paper, charge trapping and tunneling characteristics of high-k hafnium oxide ($HfO_2$) layer with various thicknesses were investigated for applications of tunnel barrier engineered nonvolatile memory. A critical thickness of $HfO_2$ layer for suppressing the charge trapping and enhancing the tunneling sensitivity of tunnel barrier were developed. Also, the charge trap centroid and charge trap density were extracted by constant current stress (CCS) method. As a result, the optimization of $HfO_2$ thickness considerably improved the performances of non-volatile memory(NVM).

• 한국응용약물학회:학술대회논문집
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• 한국응용약물학회 1998년도 Proceedings of UNESCO-internetwork Cooperative Regional Seminar and Workshop on Bioassay Guided Isolation of Bioactive Substances from Natural Products and Microbial Products
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• pp.192-192
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• 1998

The blood - brain barrier (BBB) expresses high concentrations of transferrin receptor, and it was revealed that anti-transferrin receptor mouse monoclonal antibody (OX26) undergoes transcytosis through the BBB. This property allows the OX26 to serve as a brain drug delivery vector. In an attempt to produce broadly useful targeting agents, genetic engineering and expression techniques have been used to produce antibody-avidin (AV) fusion protein (OX26 IgG3C$\_$H/3-AV). In the present study we estimated the BBB permeability and stability of genetically engineered vector.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.7-8
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• 2008

The memory characteristics of charge trap flash (CTF) with $HfO_2$ charge trap layer were investigated. Especially, we focused on the effects of tunnel barrier engineering consisted of $SiO_2/Si_3N_4/SiO_2$ (ONO) stack or $Si_3N_4/SiO_2/Si_3N_4$ (NON) stack. The programming and erasing characteristics were significantly enhanced by using ONO or NON tunnel barrier. These improvement are due to the increase of tunneling current by using engineered tunnel barrier. As a result, the engineered tunnel barrier is a promising technique for non-volatile flash memory applications.

• 방사성폐기물학회지
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• 제10권4호
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• pp.281-294
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• 2012

현재까지 개발된 고준위폐기물 심지층처분장의 열-수리-역학적 복합거동 해석을 위한 전산 코드의 현황을 조사하고, 문헌에 보고된 각 코드에 의한 계산치와 현장실험 측정치의 비교 결과를 이용하여, 기존 전산 코드들의 신뢰도를 분석하였다. 개발된 전산코드들은 완충재가 없는 처분장에서는 붕괴열에 따른 암반의 열-수리-역학적 거동을 비교적 잘 모사하였으나, 포화 경암층에 위치한 완충재가 존재하는 처분장의 공학적방벽시스템 내에서 일어나는 열-수리-역학적 복합거동의 예측은 만족스럽지 못하였다. 현재 제안된 열-수리-역학적 복합거동 해석모델을 고준위폐기물 처분장 공학적방벽시스템의 거동 해석에 적용하기 위해서는 완충재 내의 수분함량 및 전 압력 분포를 보다 정교하게 모사할 수 있도록 수학적 모델의 개선이 필요하다.