• Journal of Korean Society of Water and Wastewater
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• v.29 no.1
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• pp.33-38
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• 2015

In this study, flat-type photocatalytic reaction system is applied to reduce toxic hexavalent chromium (Cr(VI)) to trivalent chromium (Cr(III)) in aqueous solution under UV irradiation. To overcome the limitation of conventional photocatalysis, a novel approach toward photocatalytic system for reduction of hexavalent chromium including nanotubular $TiO_2$ (NTT) on two kinds of titanium substrates (foil and mesh) were established. In addition, modified Ti substrates were prepared by bending treatment to increase reaction efficiency of Cr(VI) in the flat-type photocatalytic reactor. For the fabrication of NTT on Ti substrates, Ti foil and mesh was anodized with mixed electrolytes ($NH_4F-H_2O-C_2H_6O_2$) and then annealed in ambient oxygen. The prepared NTT arrays were uniformly grown on two Ti substrates and surface property measurements were performed through SEM and XRD. Hydraulic retention time(HRT) and substrate type were significantly affected the Cr(VI) reduction. Hence, the photocatalytic Cr(VI) reduction was observed to be highest up to 95% at bended(modified) Ti mesh and lowest HRT. Especially, Ti mesh was more effective as NTT substrate in this research.

• Composites Research
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• v.36 no.5
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• pp.377-382
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• 2023

To enhance the performance of graphene-based devices, it is of great importance to better understand the interfacial interaction of graphene with its underlying substrates. In this study, the adhesion energy of monolayer graphene placed on dielectric substrates was characterized using mode I fracture tests. Large-area monolayer graphene was synthesized on copper foil using chemical vapor deposition (CVD) with methane and hydrogen. The synthesized graphene was placed on target dielectric substrates using polymer-assisted wet transfer technique. The monolayer graphene placed on a substrate was mechanically delaminated from the dielectric substrate by mode I fracture tests using double cantilever beam configuration. The obtained force-displacement curves were analyzed to estimate the adhesion energies, showing 1.13 ± 0.12 J/m² for silicon dioxide and 2.90 ± 0.08 J/m² for silicon nitride. This work provides the quantitative measurement of the interfacial interactions of CVD-grown graphene with dielectric substrates.

• Proceedings of the IEEK Conference
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• 2002.06b
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• pp.53-56
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• 2002

We have developed a Monte Carlo (MC) simulator for electron beam lithography in multi-layer resists and multi-layer substrates in order to fabricate and develop high-speed PHEMT devices for millimeter- wave applications. For the deposited energy calculation to multi-layer resists by electron beam in MC simulation, we modeled newly for multi-layer resists and heterogeneous multi-layer substrates. Using this model, we simulated T-gate or r-gate fabrication process in PHEMT device and showed our results with SEM observations.

• Transactions of the Korean hydrogen and new energy society
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• v.28 no.5
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• pp.440-446
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• 2017

This study was aimed at evaluating the effects of carbohydrate, protein and lipid content of substrate on hydrogen yields and microbial communities. The hydrogen yields were linearly correlated to carbohydrate content of substrates while others (content of proteins and lipids) did not make a significant contribution. The chemical composition of substrates produced effects on the final products of anaerobic hydrogen fermentation. Acetate and butyrate were the main fermentation products, with their concentration proving to correlate with carbohydrate and protein content of substrates. The result of microbial community analysis revealed that the relative abundances of Clostridium butyricum increased and Clostridium perfringens decreased as the carbohydrate content increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.489.2-489.2
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• 2014

The planar type flexible piezoelectric energy harvesters (PEH) based on PbZr0.52Ti0.48O3 (PZT) thin films on the flexible substrates are demonstrated to convert mechanical energy to electrical energy. The planar type energy harvesters have been realized, which have an electrode pair on the PZT thin films. The PZT thin films were deposited on double side polished sapphire substrates using conventional RF-magnetron sputtering. The PZT thin films on the sapphire substrates were transferred by PDMS stamp with laser lift-off (LLO) process. KrF excimer laser (wavelength: 248nm) were used for the LLO process. The PDMS stamp was attached to the top of the PZT thin films and the excimer laser induced onto back side of the sapphire substrate to detach the thin films. The detached thin films on the PDMS stamp transferred to adhesive layer coated on the flexible polyimide substrate. Structural properties of the PZT thin films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). To measure piezoelectric power generation characteristics, Au/Cr inter digital electrode (IDE) was formed on the PZT thin films using the e-beam evaporation. The ferroelectric and piezoelectric properties were measured by a ferroelectric test system (Precision Premier-II) and piezoelectric force microscopy (PFM), respectively. The output signals of the flexible PEHs were evaluated by electrometer (6517A, Keithley). In the result, the transferred PZT thin films showed the ferroelectric and piezoelectric characteristics without electrical degradation and the fabricated flexible PEHs generated an AC-type output power electrical energy during periodically bending and releasing motion. We expect that the flexible PEHs based on laser transferred PZT thin film is able to be applied on self-powered electronic devices in wireless sensor networks technologies. Also, it has a lot of potential for high performance flexible piezoelectric energy harvester.

• Progress in Superconductivity
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• v.7 no.1
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• pp.69-76
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• 2005

Complex single buffer composed of yttrium and samarium oxide was deposited on the metallic substrates by MOCVD (metal organic chemical vapor deposition) method using single liquid source. Two different types of the substrates with in-plane textures of about $8{\sim}10$ degree of Ni and $3at.\%W-Ni$ alloy were used. Y(tmhd: 2,2,6,6-tetramethyl-3,5-heptane dionate)$_3$:Sm(tmhd)$_3$ of liquid source was adjusted to 0.4:0.6 to minimize the lattice mismatch between the complex single buffer and the YBCO. The epitaxial growth of $(Y_{x}Sm_{1-x})_{2}O_3$ was achieved at the temperature higher than $500^{\circ}C$ in $O_2$ atmosphere. However, it was found that the formation of NiO accelerated with increasing deposition temperature. By supplying $H_{2}O$ vapor, this oxidation of the substrate could be suppressed throughout the deposition temperatures. We could get the epitaxial growth on pure Ni substrate without the formation of NiO. The competitive (222) and (400) growths were observed at the deposition temperatures of $650\~750^{\circ}C$, but the (400) growth became dominant above $800^{\circ}C$. The $(Y_{x}Sm_{1-x})_{2}O_3$-buffered metallic substrates can be used as the buffer for YBCO coated conductor.

• Korean Journal of Materials Research
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• v.14 no.7
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• pp.494-499
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• 2004

The structural, electrical and optical properties of GaN epilayers grown on various ion-implanted sapphire(0001) substrates by MOCVD were investigated. Sapphire substrates have been widely adopted to grow high quality GaN epilayer despite the large differences of lattice constant and thermal expansion coefficient between them. So, GaN or AlN buffer layer and pre-treatment was indispensably introduced before the GaN epilayer growth. The ion-implanted substrate's surface had decreased internal free energies during the growth of the ions implanted sapphire(0001) substrates. The crystal and optical properties of GaN epilayers grown in ions implanted sapphire(0001) substrate were improved. Also, excessively roughened and modified surface by ions degraded the GaN epilyers. Not only the ionic radius but also the chemical species of implanted sapphire(0001) substrates could improve the properties of GaN epilayers grown by MOCVD. This result implies that higher quality of GaN epilayers was achieved by using ion-implanted sapphire(0001) substrate with various ions.

• Journal of Korea Soil Environment Society
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• v.5 no.1
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• pp.97-108
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• 2000

A Gram-type negative bacteria that can utilize crude oil as the sole source of carbon and energy was isolated from an activated sludge of a local sewage treatment plant and identified tentatively as belonging to the genus Acinetobacter. The isolate could degrade n-alkanes and unidentified hydrocarbons in crude oil and utilize n-alkanes, hydrophobic substrates, as sole carbon and energy sources. n-Alkanes from tridecane (Cl3) to triacontane (C30) in crude oil were degraded simultaneously with no difference in degradation characteristics between the two close odd and even numbered alkanes in carbon numbers. The linear growth of the isolate and the degradation characteristics of Pr-alkanes suggested that the transport of substrates from the oil phase to the site where the substrates undergo the initial oxidation in microorganism might be the rate limiting in the biodegradation process of crude oil constituents. The remainder fraction of substrates after cultivation was considered to reflect the hydrocarbon inclusions in the cell mass, characteristics in Acinetobacter species, and to control the transport of substrates from crude oil phase. On the basis of the results, the isolate was considered to play an important role in the degradation study of hydrophobic environmental pollutants.

• Laser Solutions
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• v.14 no.1
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• pp.14-18
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• 2011

Semiconductor industry demands decrease in line/space dimensions of IC substrates. Particularly for IC substrates for CPU, line/space dimensions below $10{\mu}m/10{\mu}m$ are expected to be used in production since 2014. Conventional production technologies (SAP, etc.) based on photolithography are widely agreed to be reaching capability limits. To address this limitation, the embedded circuit fabrication technology using laser ablation has been recently developed. In this paper, we used a nanosecond UV laser and a picosecond UV laser to fabricate embedded circuit patterns into a buildup film with $SiO_2$ powders for IC substrate. We conducted SEM and EDS analysis to investigate surface quality of the embedded circuit patterns. Experimental results showed that due to higher recoil pressure, picosecond UV laser ablation of the buildup film generated a better surface roughness.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.115-116
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• 2012

The demand for flexible electronic systems such as wearable computers, E-paper, and flexible displays has increased due to their advantages of excellent portability, conformal contact with curved surfaces, light weight, and human friendly interfaces over present rigid electronic systems. This seminar introduces three recent progresses that can extend the application of high performance flexible inorganic electronics. The first part of this seminar will introduce a RRAM with a one transistor-one memristor (1T-1M) arrays on flexible substrates. Flexible memory is an essential part of electronics for data processing, storage, and radio frequency (RF) communication and thus a key element to realize such flexible electronic systems. Although several emerging memory technologies, including resistive switching memory, have been proposed, the cell-to-cell interference issue has to be overcome for flexible and high performance nonvolatile memory applications. The cell-to-cell interference between neighbouring memory cells occurs due to leakage current paths through adjacent low resistance state cells and induces not only unnecessary power consumption but also a misreading problem, a fatal obstacle in memory operation. To fabricate a fully functional flexible memory and prevent these unwanted effects, we integrated high performance flexible single crystal silicon transistors with an amorphous titanium oxide (a-TiO2) based memristor to control the logic state of memory. The $8{\times}8$ NOR type 1T-1M RRAM demonstrated the first random access memory operation on flexible substrates by controlling each memory unit cell independently. The second part of the seminar will discuss the flexible GaN LED on LCP substrates for implantable biosensor. Inorganic III-V light emitting diodes (LEDs) have superior characteristics, such as long-term stability, high efficiency, and strong brightness compared to conventional incandescent lamps and OLED. However, due to the brittle property of bulk inorganic semiconductor materials, III-V LED limits its applications in the field of high performance flexible electronics. This seminar introduces the first flexible and implantable GaN LED on plastic substrates that is transferred from bulk GaN on Si substrates. The superb properties of the flexible GaN thin film in terms of its wide band gap and high efficiency enable the dramatic extension of not only consumer electronic applications but also the biosensing scale. The flexible white LEDs are demonstrated for the feasibility of using a white light source for future flexible BLU devices. Finally a water-resist and a biocompatible PTFE-coated flexible LED biosensor can detect PSA at a detection limit of 1 ng/mL. These results show that the nitride-based flexible LED can be used as the future flexible display technology and a type of implantable LED biosensor for a therapy tool. The final part of this seminar will introduce a highly efficient and printable BaTiO3 thin film nanogenerator on plastic substrates. Energy harvesting technologies converting external biomechanical energy sources (such as heart beat, blood flow, muscle stretching and animal movements) into electrical energy is recently a highly demanding issue in the materials science community. Herein, we describe procedure suitable for generating and printing a lead-free microstructured BaTiO3 thin film nanogenerator on plastic substrates to overcome limitations appeared in conventional flexible ferroelectric devices. Flexible BaTiO3 thin film nanogenerator was fabricated and the piezoelectric properties and mechanically stability of ferroelectric devices were characterized. From the results, we demonstrate the highly efficient and stable performance of BaTiO3 thin film nanogenerator.