Fabrication of embedded circuit patterns for Ie substrates using UV laser

UV 레이저 응용 반도체 기판용 임베디드 회로 패턴 가공

  • Sohn, Hyon-Kee (Department of High-density & High-energy Beam Processing, KIMM) ;
  • Shin, Dong-Sig (Department of High-density & High-energy Beam Processing, KIMM) ;
  • Choi, Ji-Yeon (Department of High-density & High-energy Beam Processing, KIMM)
  • 손현기 (광응용기계연구실, 한국기계연구원) ;
  • 신동식 (광응용기계연구실, 한국기계연구원) ;
  • 최지연 (광응용기계연구실, 한국기계연구원)
  • Received : 2011.03.02
  • Accepted : 2011.03.15
  • Published : 2011.03.31

Abstract

Semiconductor industry demands decrease in line/space dimensions of IC substrates. Particularly for IC substrates for CPU, line/space dimensions below $10{\mu}m/10{\mu}m$ are expected to be used in production since 2014. Conventional production technologies (SAP, etc.) based on photolithography are widely agreed to be reaching capability limits. To address this limitation, the embedded circuit fabrication technology using laser ablation has been recently developed. In this paper, we used a nanosecond UV laser and a picosecond UV laser to fabricate embedded circuit patterns into a buildup film with $SiO_2$ powders for IC substrate. We conducted SEM and EDS analysis to investigate surface quality of the embedded circuit patterns. Experimental results showed that due to higher recoil pressure, picosecond UV laser ablation of the buildup film generated a better surface roughness.

Keywords