• 폴리머
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• 제37권5호
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• pp.649-655
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• 2013

방사선 그래프팅 방법을 이용하여 다공성 PTFE 지지체에 친수성 고분자 사슬인 아크릴산 사슬을 도입시켜 강화 복합 연료전지막의 지지체로 사용하기 위한 PTFE 친수화 다공성 지지체를 제조하였고 FTIR을 이용하여 다공성 PTFE에 친수성 고분자가 성공적으로 도입되었음을 확인하였다. 제조된 지지체의 표면 친수화 정도를 관찰하기 위해 접촉각을 측정한 결과, 도입된 친수성 고분자 사슬이 증가할수록 소수성의 PTFE 표면 친수화도가 증가됨을 확인하였다. 또한 제조된 지지체의 물리화학적, 형태학적 특성은 FE-SEM, gurley number, 인장강도를 측정하여 관찰하였다.

• Current Photovoltaic Research
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• 제11권1호
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• pp.8-12
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• 2023

In this work, we investigated the thickness of Ag precursor layer to improve the performance of flexible CIGSe solar cells grown on stainless steel (STS) substrates through three-stage co-evaporation with Ga grading followed by alkali treatments. The small amount of incorporated Ag in CIGSe films showed enhancement in the grain size and device efficiency. With an optimal 6 nm-thick Ag layer, the best cell on the STS substrate yielded more than 16%, which is comparable to the soda-lime glass (SLG) substrate. Thus, the addition of controlled Ag combined with alkali post-deposition treatment (PDT) led to increased open-circuit voltage (VOC), accompanied by the increased built-in potential as confirmed by capacitance-voltage (C-V) measurements. It is related to a reduction of charge recombination at the depletion region. The results suggest that Ag alloying and alkali PDT are essential for producing highly efficient flexible CIGSe solar cells.

• 센서학회지
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• 제31권4호
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• pp.255-259
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• 2022

In this study, we fabricated ZnS substrates with excellent transmittance in the mid-infrared region (3-5 ㎛) using hot pressing instead of conventional chemical vapor deposition (CVD). Diamond-like carbon (DLC) was coated on either one or both sides of the ZnS substrates to improve their mechanical properties and transmittance efficiency. To reduce the reflectance and further improve transmittance in the mid-infrared region, anti-reflection (AR) coating was designed for DLC/ZnS /AR and AR/ ZnS /AR structures. The coating structure, microstructure, and optical properties of the AR-coated ZnS substrates were subsequently investigated by employing energy dispersive X-ray spectroscopy, scanning electron microscopy, and Fourier-transform infrared (FTIR) spectroscopy. The FTIR spectroscopy results demonstrated that, in the mid-infrared region, the average transmittance of the samples with AR coating on one and both sides increased by approximately 18% and 27%, respectively. Thus, AR coating improved the transmittance of the ZnS substrates.

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2003년도 High Temperature Superconductivity Vol.XIII
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• pp.74-74
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• 2003

• 한국초전도학회:학술대회논문집
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• 한국초전도학회 2002년도 High Temperature Superconductivity Vol.XII
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• pp.70-70
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• 2002

• Journal of Electrical Engineering and Technology
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• 제8권3호
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• pp.603-609
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• 2013

In this paper, we describe the analysis of inkjet-printed silver (Ag) patterns on epoxy-coated substrates according to several reliability evaluation test method guidelines for conventional printed circuit boards (PCB). To prepare patterns for the reliability analysis, various regular test patterns were created by Ag inkjet printing on flame retardant 4 (FR4) and polyimide (PI) substrates coated with epoxy for each test method. We coated the substrates with an epoxy primer layer to control the surface energy during printing of the patterns. The contact angle of the ink to the coated epoxy primer was $69^{\circ}$, and its surface energy was 18.6 $mJ/m^2$. Also, the substrate temperature was set at $70^{\circ}C$. We were able to obtain continuous line patterns by inkjet printing with a droplet spacing of $60{\mu}m$. The reliability evaluation tests included the dielectric withstanding voltage, adhesive strength, thermal shock, pressure cooker, bending, uniformity of line-width and spacing, and high-frequency transmission loss tests.

• Bulletin of the Korean Chemical Society
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• 제35권2호
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• pp.483-488
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• 2014

The nucleophilic substitution reactions of Y-aryl methyl (8) and Y-aryl propyl (10) chlorothiophosphates with X-pyridines are studied kinetically in acetonitrile at $35.0^{\circ}C$. The Hammett and Bronsted plots with X in the nucleophiles for both substrates exhibit biphasic concave upwards with a break region between X = 3-Me and H. The obtained values of the cross-interaction constants (${\rho}_{XY}$) are negative with 8 while positive with 10 despite the same free energy correlations with X for both substrates. A stepwise mechanism with a rate-limiting bond formation is proposed with 8, whereas a stepwise mechanism with a rate-limiting leaving group departure from the intermediate is proposed with 10 based on the sign of ${\rho}_{XY}$, negative and positive with 8 and 10, respectively. A frontside nucleophilic attack is proposed with strongly basic pyridines based on the considerably great magnitudes of ${\rho}_X$ and ${\beta}_X$ values while a backside attack is proposed with weakly basic pyridines based on the relatively small magnitudes of ${\rho}_X$ and ${\beta}_X$ for both substrates.

• 전기전자학회논문지
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• 제20권2호
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• pp.177-180
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• 2016

본 연구에서는 4H-SiC(0001)기판 위에서 형성되는 나노구조화를 제어하기 위해 상지층과 하지층으로 구성된 이중층 금속을 증착하고 두께, 열처리 시간을 변화하였다. 또한 표면에너지와 응집현상의 상관관계를 분석하기 위해 SiC와는 다른 표면에너지를 갖는 Glass와 Si기판에도 같은 조건으로 실험하였다. FE-SEM을 통하여 금속이 나노구조화를 형성하는 두께가 Ag=20nm, Ti=2nm임을 확인 했으며 두께가 두꺼울 수록 나노 입자가 형성되지 않았다. 세기판의 표면에너지를 구하기 위해 접촉각 측정기를 통해 정접촉각법으로 측정하였다. 그 결과 표면에너지 값이 가장 높은 Glass(53.89 mN/m) 기판에서 나노 입자가 가장 고르게 분포된 형태를 보였으며 SiC(41.13 mN/m)에서 나노구조화 되는 양상을 보였고, Si(32.96 mN/m)에서는 NPs 형성이 되지 않았다. 표면에너지가 작을수록 나노 입자형성이 고르게 분포되는 현상을 Young equation으로 분석하였다.

• Progress in Superconductivity
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• 제7권2호
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• pp.130-134
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• 2006

Buffer layers such as $CeO_2\;and\;Yb_2O_3$ films for YBCO coated conductors were deposited on (100) $SrTiO_3$ single crystals and (100) textured Ni substrates by a metal organic chemical vapor deposition (MOCVD) system of the hot-wall type. The substrates were moved with the velocity of 40 cm/hr. Source flow rate, $Ar/O_2$ flow rate and deposition temperature were main processing variables. The degree of film epitaxy and surface morphology were investigated using XRD and SEM, respectively. On a STO substrate, the $CeO_2$ film was well grown epitaxially above the deposition temperature of $450^{\circ}C$. However, on a Ni substrate, the XRD showed NiO (111) and (200) peaks due to Ni oxidation as well as (111) and (200) film growth. For the films deposited with $O_2$ gas as oxygen source, it was found that the NiO film was formed at the interface between the buffer layer and the Ni substrate. The NiO layer interrupts the epitaxial growth of the buffer layer. It seems that the epitaxial growth of the buffer layer on Ni metal substrates using $O_2$ gas is difficult. We are considering a new method avoiding Ni oxidation with $H_2O$ vapor instead of $O_2$ gas.

• 한국결정성장학회지
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• 제31권6호
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• pp.233-239
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• 2021

본 연구에서는 산화갈륨의 방열 특성 향상을 위해 산화갈륨/다이아몬드 이종 박막 성장을 진행하였다. 먼저, 핫필라멘트 화학기상증착법을 이용하여 다결정 다이아몬드를 증착시킨 후, 미스트 화학기상증착법을 통해 450~600℃ 사이의 온도구간에서 산화갈륨 박막을 성장시켰다. 열처리 전후 비교를 통해 500℃에서 산화갈륨/다이아몬드 계면 분리 현상이 발생함을 확인하였다. 이는 비정질과 결정질이 혼재된 산화갈륨 박막이 성장된 후, 냉각 과정에서 열팽창계수의 차이로 인해 계면이 분리된 것으로 판단하였다. 따라서, 본 연구를 통한 산화갈륨/다이아몬드 계면의 물리적 안정성을 통해 산화갈륨의 열물성 보완및 고전력 반도체로의 활용이 기대된다.