• Journal of Electrochemical Science and Technology
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• v.9 no.3
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• pp.202-211
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• 2018

In this work, Fe-Pd alloy films have been electrodeposited on different substrates using an electrolyte containing $[Pd(NH_3)_4]^{2+}$ (0.02 M) and $[Fe-Citrate]^{2+}$ (0.2 M). The influences of substrate and overpotential on chemical composition, nucleation and growth kinetics as well as the electrodeposited films morphology have been investigated using energy dispersive X-ray spectroscopy (EDS), current-time transients, scanning electron microscopy (SEM), atomic force microscopy (AFM) and X-ray diffraction (XRD) patterns. In all substrates - brass, copper and sputtered fluorine doped tin oxide on glass (FTO/glass) - Fe content of the electrodeposited alloys increases by increasing the overpotential. Also the cathodic current efficiency is low due to high rate of $H_2$ co-reduction. Regarding the chronoamperometry current-time transients, it has been demonstrated that the nucleation mechanism is instantaneous with a typical three dimensional (3D) diffusion-controlled growth in the case of brass and copper substrates; while for FTO, the growth mode changes to 3D progressive. At a constant overpotential, the calculated number of active nucleation sites for metallic substrates is much higher than that of FTO/glass; however by increasing the overpotential, the number of active nucleation sites increases. The SEM micrographs as well as the XRD patterns reveal the formation of Fe-Pd alloy thin films with nanostructure arrangement and ultra-fine grains.

• Korean Journal of Metals and Materials
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• v.46 no.2
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• pp.88-96
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• 2008

Thermal evaporated 10 nm-$Ni_{50}Co_{50}$/(70 nm-poly)Si films were deposited to examine the energy saving properties of silicides formed by rapid thermal annealing at temperature ranging from 500 to $1,100^{\circ}C$ for 40 seconds. Thermal evaporated 10 nm-Ni/(70 nm-poly)Si films were also deposited as a reference using the same method for depositing the 10 nm-$Ni_{50}Co_{50}$/(70 nm-poly)Si films. A four-point probe was used to examine the sheet resistance. Transmission electron microscopy (TEM) and X-ray diffraction XRD were used to determine cross sectional microstructure and phase changes, respectively. UV-VIS-NIR and FT-IR (Fourier transform infrared spectroscopy) were used to examine the near-infrared (NIR) and middle-infrared (MIR) absorbance. TEM analysis confirmed that the uniform nickel-cobalt composite silicide layers approximately 21 to 55 nm in thickness had formed on the single and polycrystalline silicon substrates as well as on the 25 to 100 nm thick nickel silicide layers. In particular, nickel-cobalt composite silicides showed a low sheet resistance, even after rapid annealing at $1,100^{\circ}C$. Nickel-cobalt composite silicide and nickel silicide films on the single silicon substrates showed similar absorbance in the near-IR region, while those on the polycrystalline silicon substrates showed excellent absorbance until the 1,750 nm region. Silicides on polycrystalline substrates showed high absorbance in the middle IR region. Nickel-cobalt composite silicides on the poly-Si substrates annealed at $1,000^{\circ}C$ superior IR absorption on both NIR and MIR region. These results suggest that the newly proposed $Ni_{50}Co_{50}$ composite silicides may be suitable for applications of IR absorption coatings.

• Bulletin of the Korean Chemical Society
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• v.35 no.7
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• pp.1985-1988
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• 2014

$Cu_2ZnSnSe_4$ (CZTSe) thin films were synthesized on transparent conducting oxide glass substrates via a simple, non-toxic, and low-cost process using a precursor solution paste. A three-step heating process (oxidation, sulfurization, and selenization) was employed to synthesize a CZTSe thin film as an absorber layer for use in thin-film solar cells. In particular, we focused on the effects of sulfurization conditions on CZTSe film formation. We found that sulfurization at $400^{\circ}C$ involves the formation of secondary phases such as $CuSe_2$ and $Cu_2SnSe_3$, but they gradually disappeared when the temperature was increased. The formed CZTSe thin films showed homogenous and good crystallinity with grain sizes of approximately 600 nm. A solar cell device was tentatively fabricated and showed a power conversion efficiency of 2.2% on an active area of 0.44 $cm^2$ with an open circuit voltage of 365 mV, a short current density of 20.6 $mA/cm^2$, and a fill factor of 28.7%.

• Korean Journal of Materials Research
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• v.19 no.5
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• pp.245-252
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• 2009

Changes in the surface morphology and light scattering of textured Al doped ZnO thin films on glass substrates prepared by rf magnetron sputtering were investigated. As-deposited ZnO:Al films show a high transmittance of above 80% in the visible range and a low electrical resistivity of $4.5{\times}10^{-4}{\Omega}{\cdot}cm$. The surface morphology of textured ZnO:Al films are closely dependent on the deposition parameters of heater temperature, working pressure, and etching time in the etching process. The optimized surface morphology with a crater shape is obtained at a heater temperature of $350^{\circ}C$, working pressure of 0.5 mtorr, and etching time of 45 seconds. The optical properties of light transmittance, haze, and angular distribution function (ADF) are significantly affected by the resulting surface morphologies of textured films. The film surfaces, having uniformly size-distributed craters, represent good light scattering properties of high haze and ADF values. Compared with commercial Asahi U ($SnO_2$:F) substrates, the suitability of textured ZnO:Al films as front electrode material for amorphous silicon thin film solar cells is also estimated with respect to electrical and optical properties.

• Applied Microscopy
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• v.6 no.1
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• pp.33-38
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• 1976

Formation of crystal defects which may occur during and after the vacuum deposition of silver films on rocksalt substrates were studied by electron microscopy. To obtain defect free films, various evaporation conditions, such as evaporation rate, substrate temperature, substrate treatments and annealing of films were examined. Stacking faults and micro-twins are dominant defects in silver films.

• Proceedings of the KIEE Conference
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• 1999.07d
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• pp.1729-1731
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• 1999

The effect of Na on the structural and electrical properties of CIGS films were studied and their effects on the CIGS/Mo thin film solar cells were investigated. Soda-lime glass and Corning glass were used as substrates to compare the effect of Na diffusion into CIGS film. The resistivity of CIGS films was not changed in the Cu-poor region due to diffusion of Na from soda-lime glass but was mainly determined by the surface resitivity controlled by excess Na.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1457-1458
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• 2009

The fundamental parameters controlling ink-jet printing liquids are the viscosity and surface energy. The wetting contact angle determines the spread of a liquid drop on the surface and depends on the relative surface energy. The characteristics of silver ink-jet printing were studied with control of surface energy and head temperature. Polyethylene terephthalate(PET) film and Si-wafer(ptype) were used as substrates and atmospheric plasma was treated to control the surface energy. With silver ink, the hydrophilic surface treatment could reduce the radius of droplets due to the hydrophobic nature of silver ink.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.11
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• pp.969-976
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• 2007

In this thesis, an anchoring energy in the upper and lower substrates of TFT-LCD cell has been modeled and applied in the numerical calculation of the molecular orientation of the TN-LCD. The molecular orientation of liquid crystals defined as tilt and twist angles was simulated using the Newton-Raphson method and the Gaussian integration method. From the results, the tilt and twist angles for the strong anchoring energy were proven to be coincide with those of the conventional results. on the other hand, for the weak anchoring energy, azimuth angles of the molecules were changed abruptly from $0^{\circ}\;to\;90^{\circ}$ near the middle area of the cell due to the balance of the anchoring energy and the elastic energy of the liquid crystals.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1711-1714
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• 2006

Anchoring energy of liquid crystals on solid substrates is a key parameter in liquid crystal technology. A nonperturbative method of its measurement by dynamic light scattering on thermal orientational fluctuations is presented, The ratio of the zenithal and azimuthal anchoring coefficients is shown to be equal to the ratio of the orientational elastic constants.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.211-214
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• 2009

In this paper we will outline the opportunities for flexible OLED devices, both for display and solid-state lighting applications. We will present our recent data, and discuss future challenges, for low power consumption phosphorescent OLED technology fabricated on flexible substrates to enable a new generation of energy efficient electronic devices.