• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.5
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• pp.16-22
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• 2002

This paper suggests the optimum processing conditions for obtaining good quality $P^{+}$-n shallow junctions formed by pre-amorphization and furnace annealing(FA) to reflow BPSG(bore phosphosilicate glass). $BF_2$ions, the p-type dopant, were implanted with the energy of 20keV and the dose of 2$\times$10$^{15}$ cm$^{-2}$ into the substrates pre-amorphized by As or Ge ions with 45keV, 3$\times$$10^{14}$ $cm^{-2}$. High temperature annealings were performed with a furnace and a rapid thermal annealer. The temperature range of RTA was 950~$1050^{\circ}C$, and the furnace annealing was employed for BPSG reflow with the temperature of $850^{\circ}C$ for 40 minutes. To characterize the formed junctions, junction depth, sheet resistance and diode leakage current were measured. Considering the preamorphization species, Ge ion exhibited better results than As ion. Samples preamorphized with Ge ion and annealed with $1000^{\circ}C$ RTA showed the most excellent characteristics. When FA was included, Ge preamorphization with $1050^{\circ}C$ RTA plus FA showed the lowest product of sheet resistance and junction depth and exhibited the lowest leakage currents.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.3
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• pp.6-13
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• 2000

Ultra-thin gate oxide was grown on nitrogen implanted silicon substrates. For nitrogen implantation, the energy was fixed at 25keV, but the dose was split into 5.0$\times$10$^{13}$ /c $m^{2}$ and 1.0$\times$10$^{14}$ /c $m^{2}$. The grown gate oxide thickness were 2nm, 3nm and 4nm. The oxidation time to grow 3nm was increased by 20% and 50% for the implanted wafers of 5.0$\times$10$^{13}$ /c $m^{2}$ and 1.0$\times$10$^{14}$ /c $m^{2}$ doses, respectively, when it was compared with control wafers which were not implanted by nitrogen. The value of charge-to-breakdown ( $Q_{BD}$ ) is decreased with increasing nitrogen doses. If an annealing process( $N_{2}$, 85$0^{\circ}C$, 60min.) is peformed after nitrogen implantation, $Q_{BD}$ is increased. It is indicated that nitrogen implantation damage affect gate oxide reliability and the damage can be removed by post-implantation annealing process.

• Applied Chemistry for Engineering
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• v.31 no.3
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• pp.291-298
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• 2020

ZITO/Ag/ZITO multilayer transparent electrodes at room temperature on glass substrates were prepared using RF/DC magnetron sputtering. Transparent conductive films with a sheet resistance of 9.4 Ω/㎡ and a transmittance of 83.2% at 550 nm were obtained for the multilayer structure comprising ZITO/Ag/ZITO (100/8/42 nm). The sheet resistance and transmittance of ZITO/Ag/ZITO multilayer films meant that they would be highly applicable for use in polymer-dispersed liquid crystal (PDLC)-based smart windows due to the ability to effectively block infrared rays (heat rays) and thereby act as an energy-saving smart glass. Effects of the thickness of the PDLC layer and the intensity of ultraviolet light (UV) on electro-optical properties, photopolymerization kinetics, and morphologies of difunctional urethane acrylate-based PDLC systems were investigated using new transparent conducting electrodes. A PDLC cell photo-cured using UV at an intensity of 2.0 mW/c㎡ with a 15 ㎛-thick PDLC layer showed outstanding off-state opacity, good on-state transmittance, and favorable driving voltage. Also, the PDLC-based smart window optimized in this study formed liquid crystal droplets with a favorable microstructure, having an average size range of 2~5 ㎛ for scattering light efficiently, which could contribute to its superior final performance.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.5
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• pp.227-232
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• 2012

Inconel 617 and Hastelloy X are the most promising candidate materials for the heat exchanger of next generation nuclear reactor. Surface coating and its effects on high temperature properties for the Inconel 617 and Hastelloy X under molten FLiNaK (LiF-NaF-KF) salt environment have been investigated. For TiAlN and $Al_2O_3$ overlay coatings, the two different PVD (physical vapor deposition) methods of an arc discharge and a sputtering were applied, respectively. A study for the thermal stability of the surface modified Ni-Cr alloy substrates has been conducted. To evaluate the corrosion mechanism of Ni-Cr alloys in the molten salt, a ruptured Inconel pipe used for the molten salt transportation has been analyzed. The thermal properties of morphological and structural properties each sample were characterized before and after heat-treatment at $600^{\circ}C$ in molten FLiNaK salt. The results showed that the TiAlN and $Al_2O_3$ overlay coated specimens had the enhanced high temperature stability.

• Asian-Australasian Journal of Animal Sciences
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• v.15 no.12
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• pp.1695-1701
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• 2002

The purposes of this study were to optimize the in vitro maturation (IVM) and culture (IVC) systems of rabbit oocytes. Cytoskeletal structures in the germinal vesicle stage (GV) and during IVM are also investigated. Ovaries were transported from local slaughterhouses and the cumulus-oocyte complexes (COCs) were collected from ovarian follicles (${\geq}1mm$). COCs were randomly allocated to TCM199-based medium ($T_1$, TCM-199) supplemented with $NaHCO_3$, glucose, sodium pyruvate and FSH ($T_2$), $T_2+E_2+LH$ ($T_3$), $T_3+FBS$ ($T_4$), or $T_1+E_2+LH+FSH+FBS$ ($T_5$), for IVM. In Experiment 1, COCs were retrieved from the follicles and 51 GV oocytes were fixed in the fixative (MTSB-XF) for nuclear and cytoplasmic examinations. In Experiment 2, progressive changes of both the nucleus and the cytoskeleton were examined at 0, 6, 16, and 20 h after IVM. Maturation (MR) and developmental rates were assessed in Experiment 3. Cytoplasmic microtubules (MT) were clearly observed in rabbit GV oocytes. To our knowledge, this is the first report that describes the appearance of MT structures in the GV stage ooplasm. Tremendous variations in cytoskeletal alterations were observed among treatments with the exception of the vitelline ring (VR), which is constantly visible and unchanged during maturation. Germinal vesicle breakdown (GVBD) does not occur at 6 h after onset of maturation culture. When the oocytes for IVM were collected within 2 h, results from Experiment 3 showed that rates of nuclear maturation were 42, 8, 42, 37 and 65% at 16 h of IVM for $T_1$ through $T_5$, respectively, in which $T_1$, $T_4$ and $T_5$ had significantly greater MR than those in other groups (p<0.05). Morula/blastocyst development after parthenogenetic activation ranged from 20 to 63% with significantly greater rates in $T_3$, $T_4$ and $T_5$ (p<0.05). These results suggested that oocytes recovered from slaughterhouse ovaries can be matured and parthenogenetically activated in vitro, but the MR remained low in this study. Addition of $E_2$ and LH in the medium may be beneficial for cytoplasmic maturation, but FBS exerts a nega- tive role in the subsequent development of parthenogenetic embryos when energy substrates are provided in the IVC media. More studies are required for improving the MR and further development of the GV stage rabbit oocytes.

• Journal of the Korean Society of Manufacturing Process Engineers
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• v.16 no.1
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• pp.96-101
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• 2017

We have developed a compact desktop-sized nanopatterning system driven by the Roll-to-Roll (R2R) nanoimprinting (NIL) principle. The system realizes the continuous and high-speed stamping of various nanoscale patterns on a large-area flexible substrate without resorting to ponderous and complicated instruments. We first lay out the process principle based on continuous NIL on a UV-curable resin layer using a flexible nanopatterned mold. We then create conceptual and specific designs for the system by focusing on two key processes, imprinting and UV curing, which are performed in a continuous R2R fashion. We build a system with essential components and optimized modules for imprinting, UV curing, and R2R conveying to enable simple but effective nanopatterning within the desktop volume. Finally, we demonstrate several nanopatterning results such as nanolines and nanodots, which are obtained by operating the built desktop R2R NIL system on transparent and flexible substrates. Our system may be further utilized in the scalable fabrication of diverse flexible nanopatterns for many functional applications in optics, photonics, sensors, and energy harvesters.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.335-335
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• 2014

Over the past several years, transparent conducting oxides have been extensively studied in order to replace indium tin oxide (ITO). Here we report on fluorine doped zinc tin oxide (FZTO) films deposited on glass substrates by radio-frequency (RF) magnetron sputtering using a 30 wt% ZnO with 70 wt% SnO2 ceramic targets. The F-doping was carried out by introducing a mixed gas of pure Ar, CF4, and O2 forming gas into the sputtering chamber while sputtering ZTO target. Annealing temperature affects the structural, electrical and optical properties of FZTO thin films. All the as-deposited FZTO films grown at room temperature are found to be amorphous because of the immiscibility of SnO2 and ZnO. Even after the as-deposited FZTO films were annealed from $300{\sim}500^{\circ}C$, there were no significant changes. However, when the sample is annealed temperature up to $600^{\circ}C$, two distinct diffraction peaks appear in XRD spectra at $2{\Theta}=34.0^{\circ}$ and $52.02^{\circ}$, respectively, which correspond to the (101) and (211) planes of rutile phase SnO2. FZTO thin film annealed at $600^{\circ}C$ resulted in decrease of resistivity $5.47{\times}10^{-3}{\Omega}cm$, carrier concentration ~1019 cm-3, mobility~20 cm2 V-1s-1 and increase of optical band gap from 3.41 to 3.60 eV with increasing the annealing temperatures and well explained by Burstein-Moss effect. Change of work function with the annealing temperature was obtained by ultraviolet photoemission spectroscopy. The increase of annealing temperature leads to increase of work function from ${\phi}=3.80eV$ (as-deposited FZTO) to ${\phi}=4.10eV$ ($600^{\circ}C$ annealed FZTO) which are quite smaller than 4.62 eV for Al-ZnO and 4.74 eV for SnO2. Through X-ray photoelectron spectroscopy, incorporation of F atoms was found at around the binding energy of 684.28 eV in the as-deposited and annealed FZTO up to 400oC, but can't be observed in the annealed FZTO at 500oC. This result indicates that F atoms in FZTO films are loosely bound or probably located in the interstitial sites instead of substitutional sites and thus easily diffused into the vacuum from the films by thermal annealing. The optical transmittance of FZTO films was higher than 80% in all specimens and 2-3% higher than ZTO films. FZTO is a possible potential transparent conducting oxide (TCO) alternative for application in optoelectronics.

• Korean Journal of Materials Research
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• v.9 no.8
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• pp.804-809
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• 1999

Silica films were prepared on Si single crystal substrates by a sol-gel process without DMF using TEOS as a starting material. Films were fabricated by spin coating technique. For films having a composition of TEOS : HCI(1:0.05mol), gelation time, the thickness of films, the formation of cracks and the microstructure of the films were investigated as a function of the molar ratio of $CH_3OH and H_2O$. With 8mol $CH_3OH$, the longest gelation time was measured to be 640hr. The thickness of the coated films was decreased with increasing content of $CH_3OH$. The films were sintered at $500^{\circ}C$ for 1hr with a heating rate of $0.6^{\circ}C$/min. The coated films showed worm-like grains and partially cracked microstructures at an amount of $CH_3OH$ 2mol and 4mol. The addition of more than 8 mole of $CH_2OH$ resulted in crack-free silica films. This suggests that crack-free films can be fabricated by controlling the surface tension energy of the sol solutions without DMF.

• Journal of the Korea Organic Resources Recycling Association
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• v.20 no.1
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• pp.61-70
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• 2012

Feasibility of co-digestion was investigated by a series of anaerobic batch experiments using sewage sludge, swine waste, and food waste leachate as substrates. The organic solid wastes were collected from M city, where the daily productions of sewage sludge, swine waste, and food waste leachate were 178 ton/d, 150 ton/d, and 8 ton/d, respectively. Both swine waste and food waste leachate showed superior methane yields, methane productivities, and organic pollutant removal efficiencies compared to sewage sludge. Co-digestion of the total amounts of organic solid wastes would enhance methane production by 5.60 times $(530\;m^{3}\;CH_{4}/d\;{\rightarrow}\;2,968\;m^{3}\;CH_{4}/d)$. However, it also increase the amount of digestate by 1.88 times with 3.79 to 4.92 times higher pollutants (chemical oxygen demands total nitrogen, and total phosphorus) loading rates. Co-digestion of organic solid wastes is a valid strategy to enhance the performance of an anaerobic sludge digester and the energy independence of a wastewater treatment plant. Anyhow,the increment of digestate with higher pollutant loading would need a careful counterplan in the operation of the main stream of the treatment plant.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.