• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.327-327
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• 2009

ZnO with a large band gap (~3.37 eV) and exciton binding energy (~60 meV), is suitable for optoelectronic applications such as ultraviolet (UV) light emitting diodes (LEDs) and detectors. However, the ZnO-based p-n homojunction is not readily available because it is difficult to fabricate reproducible p-type ZnO with high hall concentration and mobility. In order to solve this problem, there have been numerous attempts to develop p-n heterojunction LEDs with ZnO as the n-type layer. The n-ZnO/p-GaN heterostructure is a good candidate for ZnO-based heterojunction LEDs because of their similar physical properties and the reproducible availability of p-type GaN. Especially, the reduced lattice mismatch (~1.8 %) and similar crystal structure result in the advantage of acquiring high performance LED devices. In particular, a number of ZnO films show UV band-edge emission with visible deep-level emission, which is originated from point defects such as oxygen vacancy, oxygen interstitial, zinc interstitial[1]. Thus, defect-related peak positions can be controlled by variation of growth or annealing conditions. In this work, the undoped ZnO film was grown on the p-GaN:Mg film using RF magnetron sputtering method. The undoped ZnO/p-GaN:Mg heterojunctions were annealed in a horizontal tube furnace. The annealing process was performed at $800^{\circ}C$ during 30 to 90 min in air ambient to observe the variation of the defect states in the ZnO film. Photoluminescence measurements were performed in order to confirm the deep-level position of the ZnO film. As a result, the deep-level emission showed orange-red color in the as-deposited film, while the defect-related peak positions of annealed films were shifted to greenish side as increasing annealing time. Furthermore, the electrical resistivity of the ZnO film was decreased after annealing process. The I-V characteristic of the LEDs showed nonlinear and rectifying behavior. The room-temperature electroluminescence (EL) was observed under forward bias. The EL showed a weak white and strong yellowish emission colors (~575 nm) in the undoped ZnO/p-GaN:Mg heterojunctions before and after annealing process, respectively.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.27 no.2
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• pp.75-79
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• 2017

Honeycomb-shaped Ag-grid transparent conductive electrodes (TCEs) were fabricated using two different processes, high density plasma etching and lift-off, and the optical and electrical properties were compared according to the fabrication method. For the fabrication of the Ag-grid TCEs by plasma etching, etch characteristics of the Ag thin film in $10CF_4/5Ar$ inductively coupled plasma (ICP) discharges were studied. The Ag etch rate increased as the power increased at relatively low ICP source power or rf chuck power conditions, and then decreased at higher powers due to either decrease in $Ar^+$ ion energy or $Ar^+$ ion-assisted removal of the reactive F radicals. The Ag-grid TCEs fabricated by the $10CF_4/5Ar$ ICP etching process showed better grid pattern transfer efficiency without any distortion or breakage in the grid pattern and higher optical transmittance values of average 83.3 % (pixel size $30{\mu}m/line$ width $5{\mu}m$) and 71 % (pixel size $26{\mu}m/line$ width $8{\mu}m$) in the visible range of spectrum, respectively. On the other hand, the Ag-grid TCEs fabricated by the lift-off process showed lower sheet resistance values of $2.163{\Omega}/{\square}$ (pixel size $26{\mu}m/line$ width $18{\mu}m$) and $4.932{\Omega}/{\square}$ (pixel size $30{\mu}m/line$ width $5{\mu}m$), respectively.

• Journal of the Society of Disaster Information
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• v.14 no.2
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• pp.130-140
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• 2018

Purpose: In this paper, we propose a design technique for the safety characterization grounding in the construction of the photovoltaic power generation complex which can be useful and useful as an alternative power energy source in our society. In other words, we will introduce the application of safety grounding for each application, which can improve and optimize the reliability of the internal grid from the cell module to the electric room in the photovoltaic power generation complex. Method: We analyze the earth resistivity of the soil in the solar power plant and use the computer program (CDEGS) to analyze the contact voltage and stratospheric voltage causing the electric shock, and propose the calculation and calculation method of the safety ground. In addition, we will discuss the importance of semi-permanent ground electrode selection in consideration of soil environment. Results: We could obtain the maximum and minimum value of ground resistivity for each of the three areas of the data measured by the Wenner 4 - electrode method. The measured data was substituted into the basic equation and calculated with a MATLAB computer program. That is, it can be determined that the thickness of the minimum resistance value is the most favorable soil environment for installing the ground electrode. Conclusion: Through this study, we propose a grounding system design method that can suppress the potential rise on the ground surface in the inner grid of solar power plant according to each case. However, the development of smart devices capable of accumulating big data and a monitoring system capable of real-time monitoring of seismic changes in earth resistances and grounding systems should be further studied.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.04a
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• pp.41-41
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• 2008

In general, polyimides (PIs) are used in alignment layers in liquid crystal displays (LCDs). The rubbing alignment technique has been widely used to align the LC molecules on the PI layer. Although this method is suitable for mass production of LCDs because of its simple process and high productivity, it has certain limitations. A rubbed PI surface includes debris left by the cloth, and the generation of electrostatic charges during the rubbing induces local defects, streaks, and a grating-like wavy surface due to nonuniform microgrooves that degrade the display resolution of computer displays and digital television. Additional washing and drying to remove the debris, and overwriting for multi-domain formation to improve the electro-optical characteristics such as the wide viewing angle, reduce the cost-effectiveness of the process. Therefore, an alternative to non-rubbing techniques without changing the LC alignment layer (i.e, PI) is proposed. The surface of LC alignment layers as a function of the ion beam (IE) energy was modified. Various pretilt angles were created on the IB-irradiated PI surfaces. After IB irradiation, the Ar ions did not change the morphology of the PI surface, indicating that the pretilt angle was not due to microgrooves. To verify the compositional behavior for the LC alignment, the chemical bonding states of the ill-irradiated PI surfaces were analyzed in detail by XPS. The chemical structure analysis showed that ability of LCs to align was due to the preferential orientation of the carbon network, which was caused by the breaking of C=O double bonds in the imide ring, parallel to the incident 18 direction. The potential of non-rubbing technology for fabricating display devices was further conformed by achieving the superior electro-optical characteristics, compared to rubbed PI.

• The Korean Journal of Ceramics
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• v.4 no.2
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• pp.95-98
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• 1998

We have developed new type of superconducting-superionic conducting nanohybrids, $Ag_xI_wBi_2Sr_2Ca_{n-1}Cu_nO_y$ (n=1 and 2) by applying the chimie douce reaction to the superconducting Bi-based cuprates. These nanohybrids can be achieved by the stepwise intercalation whereby the $Ag^+$ ion is thermally diffused into the pre-intercalated iodine sublattice of $IBi_2Sr_2Ca_{n-1}Cu_nO_y$. According to the X-ray diffraction analysis, the Ag-I intercalates are found to have an unique heterostructure in which the superionic conducting Ag-I layer and the superconducting $IBi_2Sr_2Ca_{n-1}Cu_nO_y$ layer are regularly interstratified with a remarkable basal increment of ~7.3$\AA$. The systematic XAS studies demonstrate that the intercalation of Ag-I accompanies the charge transfer between host and guest, giving rise to a change in hole concentration of $CuO_2$ layer and to a slight $T_c$ change. The Ag K-edge EXAFS result reveals that the intercalated Ag-I has a $\beta$-AgI-like local structure with distorted tetrahedral symmetry, suggesting a mobile environment for the intercalated $Ag^+$ ion. In fact, from ac impedance analyses, we have found that the Ag-I intercalates possess a fast ionic conductivity ($\sigma_i=10^{-1.4}\sim 10^{-2.6}\Omega^{-1}\textrm{cm}^{-1}\;at\;270^{\circ}C$ with an uniform activation energy ($\DeltaE_a=0.22\pm 0.02$ eV). More interesting finding is that these intercalates exhibit high electronic conducting as well as ionic ones ($t_i$=0.02~0.60) due to their interstratified structure consisting of superionic conducting and superconducting layers. In this respect, these new intercalates are expected to be useful as an electrode material in various electrochemical devices.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.3
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• pp.576-583
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• 2018

Silicon carbide is considered to be a potentially useful material for high-temperature electronic devices, as its band gap is larger than that of silicon and the p-type and/or n-type conduction can be controlled by impurity doping. Particularly, porous n-type SiC ceramics fabricated from ${\beta}-SiC$ powder have been found to show a high thermoelectric conversion efficiency in the temperature region of $800^{\circ}C$ to $1000^{\circ}C$. For the application of SiC thermoelectric semiconductors, their figure of merit is an essential parameter, and high temperature (above $800^{\circ}C$) electrodes constitute an essential element. Generally, ceramics are not wetted by most conventional braze metals,. but alloying them with reactive additives can change their interfacial chemistries and promote both wetting and bonding. If a liquid is to wet a solid surface, the energy of the liquid-solid interface must be less than that of the solid, in which case there will be a driving force for the liquid to spread over the solid surface and to enter the capillary gaps. Consequently, using Ag with a relatively low melting point, the junction of the porous SiC semiconductor-Ag and/or its alloy-SiC and/or alumina substrate was studied. Ag-20Ti-20Cu filler metal showed promise as the high temperature electrode for SiC semiconductors.

• Journal of Advanced Marine Engineering and Technology
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• v.37 no.4
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• pp.409-417
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• 2013

Mu-communication board supported by multi-communication is designed with Atxmega 128A1 which is a low power energy consuming of 8-bit microcontroller. ATxmega128A1 microcontroller consists of 8 UART(Universal asynchronous receiver/transmitter) ports which can be setting appropriate user interface having command line interpreter(CLI) program with each port, 2 kbytes EEPROM, 128 kbytes flash memory, 8 kbytes SRAM. 8 URAT ports are used for the multi communication modem, GPS module, etc. and EEPROM is used for saving a configuration for program running, and flash memory of 128 kbytes is used for storing a Firm Ware, and 8 kbytes SRAM is used for stack, storing memory of global variables while program running. If we uses the hybrid communication of path optimization of VHF, TRS and CDMA to remote control AtoN(aid to navigation), it is able to remove the communication shadow area. Even though there is a shadow area for individual communication method, we can select an optimum communication method. The compatibility of data has been enhanced as using of same data frame per communication devices. For the test, 8640 of data has been collected from the each buoy during 30 days in every 5 minutes and the receiving rate of the data has shown more than 99.4 %.

• Progress in Medical Physics
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• v.20 no.2
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• pp.51-61
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• 2009

A Compton camera, which is based on the geometrical interpretation of Compton scattering, is a very promising gamma-ray imaging device considering its several advantages over the conventional gamma-ray imaging devices: high imaging sensitivity, 3-D imaging capability from a fixed position, multi-tracing functionality, and almost no limitation in photon energy. In the present study, a Monte Carlo-based, user-friendly Compton imaging simulator was developed in the form of a graphical user interface (GUI) based on Geant4 and $MATLAB^{TM}$. The simulator was tested against the experimental result of the double-scattering Compton camera, which is under development at Hanyang University in Korea. The imaging resolution of the simulated Compton image well agreed with that of the measured image. The imaging sensitivity of the measured data was 2~3 times higher than that of the simulated data, which is due to the fact that the measured data contains the random coincidence events. The performance of a stacking-structure type Compton camera was evaluated by using the simulator. The result shows that the Compton camera shows its highest performance when it uses 4 layers of scatterer detectors.

• Journal of Sensor Science and Technology
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• v.27 no.5
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• pp.317-327
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• 2018

Terahertz (THz) time-domain spectroscopy(TDS), imaging techniques, and related systems have become mature technologies, widely used in many universities and research laboratories. However, the development of creative technologies still requires improved THz application systems. A few key points are discussed, including the innovative advances of mode-locking energy-emitting semiconductor lasers and better photoconductive semiconductor quantum structures. To realize a compact, low cost, and high performance THz system, it is essential that THz spectroscopy and imaging technologies are better characterized by semiconductor and nano-devices, both static and time-resolved. We introduce the THz spectroscopy and imaging systems, the OSCAT(Optical Sampling by laser CAvity Tuning) system and the ASOPS(ASynchronous Optical Sampling) system, are constructed by our research team. We report on the THz images obtained from their use.

• Journal of Korea Society of Industrial Information Systems
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• v.19 no.1
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• pp.13-18
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• 2014

Sensor nodes are used for monitoring and collecting the environmental data via wireless sensor network. The wireless sensor network with various sensor nodes draws attention as a key technology in ubiquitous computing. Sensor nodes has very small memory capacity and limited power resource. Thus, it is essential to have energy efficient strategy for the sensor nodes. Since the sensor nodes are operating on the same frequency bands with ISM frequency bands, the interference by the devices operating on the ISM band degrades the quality of communication integrity. In this paper, the convolutional code is proposed instead of ARQ for the error control for the sensor network. The proposed convolutional code was implemented and the BER performance is measured. For the fixed transmitting powers of -19.2 dBm and -25dBm, the BER with various communication distances are measured. The packet loss rate and the retransmission rate are calculated from the measured BER. It is shown that the porposed method obtained about 9~12% and 12-19% reduction in retransmission rate for -19.2 dBm and -25 dBm respectively.