• Title/Summary/Keyword: energy band method

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Design of LLCL Filter for Single Phase Inverters with Confined Band Variable Switching Frequency (CB-VSF) PWM

  • Attia, Hussain A.;Freddy, Tan Kheng Suan;Che, Hang Seng;El Khateb, Ahmad H.
    • Journal of Power Electronics
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    • v.19 no.1
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    • pp.44-57
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    • 2019
  • Recently, the use of LLCL filters for grid inverters has been suggested to give better harmonic attenuation than the commonly used L and LCL filters, particularly around the switching frequency. Nevertheless, this filter is mainly designed for constant switching frequency pulse width modulation (CSF PWM) methods. In variable switching frequency PWM (VSF PWM), the harmonic components are distributed across a wide frequency band which complicates the use of a high order filter, including LCL and LLCL filters. Recently, a confined band variable switching frequency (CB-VSF) PWM method has been proposed and demonstrated to be superior to the conventional constant switching frequency (CSF) PWM in terms of switching losses. However, the applicability of LLCL filters for this type of CB-VSF PWM has not been discussed. In this paper, the authors study the suitability of an LLCL filter for CB-VSF PWM and propose design guidelines for the filter parameters. Using simulation and experimental results, it is demonstrated that the effectiveness of an LLCL filter with CB-VSF PWM depends on the parameters of the filters as well as the designed variable frequency band of the PWM. Simulation results confirm the performance of the suggested LLCL design, which is further validated using a lab scale prototype.

Temperature dependence of photocurrent for the AgInS2 epilayers grown by hot wall epitaxy (Hot Wall Epitaxy 방법에 의해 성장된 AgInS2 박막의 광전류 온도 의존성)

  • Park, Chang-Sun;Hong, Kwang-Joon;Lee, Sang-Youl;You, Sang-Ha;Lee, Bong-Ju
    • Journal of Sensor Science and Technology
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    • v.16 no.1
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    • pp.1-6
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    • 2007
  • A silver indium sulfide ($AgInS_{2}$) epilayer was grown by the hot wall epitaxy method, which has not been reported in the literature. The grown $AgInS_{2}$ epilayer has found to be a chalcopyrite structure and evaluated to be high quality crystal. From the photocurrent measurement in the temperature range from 30 K to 300 K, the two peaks of A and B were only observed, whereas the three peaks of A, B, and C were seen in the PC spectrum of 10 K. These peaks are ascribed to the band-to-band transition. The valence band splitting of $AgInS_{2}$ was investigated by means of the photocurrent measurement. The crystal field splitting, ${\Delta}cr$, and the spin orbit splitting, ${\Delta}so$, have been obtained to be 0.150 eV and 0.009 eV at 10 K, respectively. And, the energy band gap at room temperature has been determined to be 1.868 eV. Also, the temperature dependence of the energy band gap, $E_{g}$(T), was determined.

The anisotropic of threshold energy of impact ionization for energy band structure on GaAs (GaAs 에너지밴드구조에 따른 임팩트이온화의 문턱에너지 이방성)

  • 정학기;고석웅;이종인
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 1999.05a
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    • pp.389-393
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    • 1999
  • The exact model of impact ionization events in which has influence on device efficiency, is to be necessary element for device simulation. Recently, a modified Keldysh formula with two set of power exponent of 7.8 and 5.6 is used to simulate carrier transport. This model is, however, not suitable as impact ionization model in low energy range since this ignore direction dependent properties of impact ionization. The impact ionization rate is highly anisotropic at low energy, while it becomes isotropic at higher energy range. Note that impact ionization events frequently occur in high energy range. For calculating impart ionization rate, we use full energy band structure derived from Fermi's golden rule and empirical pseudopotential method. We compare with calculated and experimental value, and investigate direction dependent conduction energy band structure along the direction of <100>, <110> and <111>. We know that the threshold energy of impact ionization is anisotropic and impact ionization rate is very deviated from modified Keldish formula, in relatively low energy range.

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일본ME학회 학술대회 참관기

  • 홍승홍
    • Journal of Biomedical Engineering Research
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    • v.9 no.1
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    • pp.135-138
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    • 1988
  • In this paper, computerized BEAM was implemented for the space domain analysis of EEG. Trans-formation from temporal summation to two-dimensional mappings is formed by 4 nearest point inter-polaton method. Methods of representation of BEAM are two. One is dot density method which classify brain electrical potential 9 levels by dot density of gray levels and the other is colour method which classify brain electrical 12 levels by red-green colours. In this BEAM, instantaneous change and average energy distribution over any arbitrary time interval of brain electrical activity could be observed and analyzed easily. In the frequency domain, the distribution of energy spectrum of a special band can easily be distinguished normality and abnormality.

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Optical Properties and Thermodynamic Function Properties of Undoped and Co-Doped $Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$ Single Crystals ($Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$$Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$:$Co^{2+}$ 단결정의 광학적 특성과 열역학 함수 추정)

  • Hyun, Seung-Cheol;Park, Hjung;Park, Kwang-Ho;Oh, Seok-Kyun;Kim, Hyung-Gon;Kim, Nam-Oh
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.52 no.7
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    • pp.275-281
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    • 2003
  • $Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$ and $Zn_{0.5}Cd_{0.5}Al_{2}Se_{4}$:$Co^{2+}$ single crystals were grown by CTR method. The grown single crystals have defect chalcopyrite structure with lattice constant a=5.5966$\AA$, c=10.8042$\AA$ for the pure, a=5.6543$\AA$, c=10.8205$\AA$ for the Co-doped single crystal, respectively. The optical energy band gap was given as indirect band gap. The optical energy band gap was decreased according to add of Co-impurity Temperature dependence of optical energy band gap was fitted well to the Varshni equation. From this relation, we can deduced the entropy, enthalpy and heat capacity. Also, we can observed the Co-impurity optical absorption peaks assigned to the $Co^{2+}$ ion sited at the $T_{d}$ symmetry lattice and we consider that they were attributed to the electron transitions between energy levels of ions.

Extraction of the Self-Energy from Simulated ARPES Data for High $T_c$ Superconductors (고온초전도체 ARPES 시뮬레이션에서 자체에너지 추출)

  • Bok, Jin-Mo;Yun, Jae-Hyun;Choi, Han-Yong
    • Progress in Superconductivity
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    • v.10 no.2
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    • pp.69-73
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    • 2009
  • For extraction of the self-energy from the angle resolved photoemission spectroscopy(ARPES) experiments for the cuprate superconductors, the momentum distribution curve(MDC) analysis is commonly used. There are two requirements for this method to work: the self-energy is momentum independent and the bare electron dispersion is known. Assuming that the first condition is satisfied in the cuprates, we checked the effects of the bare dispersion on the extracted self-energy. For this, we first generated the ARPES intensity using the tight-binding band of the B2212 by solving the Eliashberg equation. We then extracted the self-energy from the theoretically generated ARPES intensity using the linear and quadratic dispersions. By choosing the bare dispersion such that the Kramer-Kronig relation is best satisfied between the real and imaginary parts of the extracted self-energy, we confirmed that the quadratic dispersion is better for the bare electron band for Bi2212. The self-energy can be reasonably extracted from the ARPES experiments using the MDC analysis.

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An Investigation of Power Flow Mechanism in Beam-plate Built-up Structures with an Energy-absorbing Plate (보-판 결합 구조물에서 에너지 흡수체로 작용하는 판의 특성에 따른 파워 전달 특성에 관한 연구)

  • Yoo, Ji-Woo
    • Transactions of the Korean Society for Noise and Vibration Engineering
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    • v.17 no.1 s.118
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    • pp.55-64
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    • 2007
  • In the built-up structure consisting of a stiff beam and a flexible plate, Grice showed that the plate behaves as an energy absorber in narrow frequency bands(called plate blocking effect). This paper deals with such beam-plate coupled structures, where the plate is an energy absorber and the excited beam is an energy path. It is found that such energy dissipation can occur in the relatively broad bands, if different stiffnesses are used in the rectangular plate. It was experimentally verified by Heckl that the energies in terms of one-third octave band averages transferred to the plate(or dissipated in the plate) increase for increased plate damping. This Paper, however, shows that the energy absorption suddenly reduces at the certain narrow frequency bands where the plate damping effect upon the coupled beam is maximum. Also, in order to minimize energy transfer through the beam in terms of one-third octave band averages, it is advantageous to increase the plate damping closer to the excitation point All these results are based on the wane method.

A Study on Real Time Monitoring of Tool Breakage in Milling Operation Using a DSP (DSP를 이용한 정면 밀링공구의 실시간 파단 감시방법에 관한 연구)

  • Baek, Dae-Kyun;Ko, Tae-Jo;Kim, Hee-Sool
    • Journal of the Korean Society for Precision Engineering
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    • v.13 no.6
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    • pp.168-176
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    • 1996
  • A diagnosis system which can monitor tool breakage and chipping in real time was developed using a DSP(Digital Signal Processor) board in face milling operation. AR modelling and band energy method were used to extract the feature of tool states from cutting force signals. Artificial neural network embedded on DSP board discriminates different patterns from features got after signal processing. The features extracted from AR modelling are more accurate for the malfunction of a process than those from band energy method, even though the computing speed of the former is slow. From the processed features, we can construct the real time diagnosis system which monitors malfunction by using a DSP board having a parallel processing capability.

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Electronic Structure of Oxygen in the Defective Nickel Monoxide

  • Lee, Gwang Sun;Gu, Hyeon Ju;Ham, Gyeong Hui;An, Un Seon
    • Bulletin of the Korean Chemical Society
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    • v.16 no.2
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    • pp.164-168
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    • 1995
  • The band structure of nickel monoxide having a cation defect rock salt structure is calculated by means of the tight-binding extended Huckel method. The calculation is also made for the net charge, the DOS, the COOP, the electron density of the constituent atoms, and the O 1s binding energy shift when one of the adjacent nickel atoms is defected. It is found that the band gap near the Γ direction on the Brillouin zone is about 0.2 eV, and that all of the properties calculated including the electronic structure of the oxygen atom are more effectively affected by the surface defect than the inside one. The core O 1s binding energy shift is calculated by the use of valence potential method and the results are very satisfactory in comparison with the XPS experimental findings.

Determinations of the Exposure Rate Using a NaI(Tl) Detector of the Environmental Radiation Monitor (환경방사선감시기의 NaI(Tl) 검출기를 이용한 조사선량률 결정방법)

  • Ji, Young-Yong;Lee, Wanno;Choi, Sang-Do;Chung, Kun Ho;Kang, Mun Ja;Choi, Geun-Sik
    • Journal of Nuclear Fuel Cycle and Waste Technology(JNFCWT)
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    • v.11 no.3
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    • pp.245-251
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    • 2013
  • The energy band and the G-factor method were compared to determine the exposure rate from the measured spectrum using a NaI(Tl) scintillation detector. First, G-factors of a 3"${\Phi}X3$" NaI(Tl) detector mounted to a EFRD 3300, which means the environmental radiation monitor, in Korea Atomic Energy Research Institute (KAERI) were calculated for several directions of incident photons through the MCNP modeling, and the optimum G-factor applicable to that monitor was then determined by comparing the results both the energy band method and the G-factor method. The results for these spectrometric determinations were also compared with the dose rate from a HPIC radiation monitor around a EFRD 3300. The measured value at the EFRD 3300 based on a 3"${\Phi}X3$" NaI(Tl) detector was $7.7{\mu}R/h$ and its difference was shown about $3{\mu}R/h$, when compared with the results from a HPIC radiation moditor. Since a HPIC is known to be able to measure cosmic rays with the relatively high energy, the difference between them was caused by cosmic rays which were not detected in a 3"${\Phi}X3$" NaI(Tl) detector.