• IEIE Transactions on Smart Processing and Computing
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• v.6 no.1
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• pp.66-70
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• 2017

Radioactive materials are used in medicine, non-destructive testing, and nuclear plants. Source localization is especially important during nuclear decommissioning and decontamination because the actual location of the radioactive source within nuclear waste is often unknown. The coded-aperture imaging technique started with space exploration and moved into X-ray and gamma ray imaging, which have imaging process characteristics similar to each other. In this study, we simulated $21{\times}21$ and $37{\times}37$ coded aperture collimators based on a modified uniformly redundant array (MURA) pattern to make a gamma imaging system that can localize a gamma-ray source. We designed a $21{\times}21$ coded aperture collimator that matches our gamma imaging detector and did feasibility experiments with the coded aperture imaging system. We evaluated the performance of each collimator, from 2 mm to 10 mm thicknesses (at 2 mm intervals) using root mean square error (RMSE) and sensitivity in a simulation. In experimental results, the full width half maximum (FWHM) of the point source was $5.09^{\circ}$ at the center and $4.82^{\circ}$ at the location of the source was $9^{\circ}$. We will continue to improve the decoding algorithm and optimize the collimator for high-energy gamma rays emitted from a nuclear power plant.

• Progress in Superconductivity
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• v.6 no.2
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• pp.133-137
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• 2005

We fabricated the Au/Ni template for YBCO coated conductors and evaluated texture formation and the microstructural evolution. The cube textured Ni substrate was fabricated by rolling and recrystallization annealing, and subsequently Au layer formed on the substrate by electroless-plating method. The texture was evaluated by pole-figure with x-ray goniometer with orientation distribution function (ODF) analysis. The surface roughness and grain boundary morphology of template were characterized by atomic force microscopy (AFM) We observed that Au layer deposited epitaxially on Ni substrate and formed a strong cube texture when plating time was optimized. The full-width at half-maximum (FWHM) was $8.4^{\circ}$ for out-of-plane and $9.98^{\circ}$ for in-plane texture for plating time of 30 min. Microstructural observation showed that the Au layer was homogeneous and dense without formation of crack/microcrack. In addition, we observed that root-mean-square (RMS) and depth of grain boundary were 14.6 nm and 160 $\AA$ for the Au layer, respectively, while those were 27.0 nm and 800 $\AA$ for the Ni substrate, indicating that the electoless-plated Au layer had relatively smooth surface and effectively mollified grain groove.

• Korean Journal of Optics and Photonics
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• v.10 no.2
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• pp.152-156
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• 1999

We have developed the pulse-width variable Quenched Dye Laser (QDL). QDL consisted of the dye cell of 5 mm length containing a $2.5{\times}10^{-3}$[mol/l] solution of Rhodamine 6G and the cylindrical lens focal length of 150 mm and quenching mirror. QDL system was pumped by s XeCl excimer laser with 150 mJ pulse energy in a 20 ns pulse at 1 Hz repetition rate. Pulse-width of QDL was measured by a noncollinear intensity autocorrelator. The focused thckness was measured by changing the position of the focusing cylindrical lens. Pulse-width of QDL as a function of the focused thickness (273.0${\mu}{\textrm}{m}$~845.0${\mu}{\textrm}{m}$) varied continuously from 86 ps to 201 ps.

• Korean Journal of Materials Research
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• v.23 no.10
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• pp.580-585
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• 2013

To observe the formation of defects at the interface between an oxide semiconductor and $SiO_2$, ZnO was prepared on $SiO_2$ with various oxygen gas flow rates by RF magnetron sputtering deposition. The crystallinity of ZnO depends on the characteristic of the surface of the substrate. The crystallinity of ZnO on a Si wafer increased due to the activation of ionic interactions after an annealing process, whereas that of ZnO on $SiO_2$ changed due to the various types of defects which had formed as a result of the deposition conditions and the annealing process. To observe the chemical shift to understand of defect deformations at the interface between the ZnO and $SiO_2$, the O 1s electron spectra were convoluted into three sub-peaks by a Gaussian fitting. The O 1s electron spectra consisted of three peaks as metal oxygen (at 530.5 eV), $O^{2-}$ ions in an oxygen-deficient region (at 531.66 eV) and OH bonding (at 532.5 eV). In view of the crystallinity from the peak (103) in the XRD pattern, the metal oxygen increased with a decrease in the crystallinity. However, the low FWHM (full width at half maximum) at the (103) plane caused by the high crystallinity depended on the increment of the oxygen vacancies at 531.66 eV due to the generation of $O^{2-}$ ions in the oxygen-deficient region formed by thermal activation energy.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.5
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• pp.390-396
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• 2009

The present research was focused to investigate the quality of non-polar SiC substrates grown by a conventional PVT method for optoelectronic applications. The half part of the PVT-grown 6H-SiC crystal boules was sliced along a-direction and m-direction to extensively analyze non-polar planes and then remaining part of that was sliced along the basal plane to produce wafers. The non-polar SiC m-plane and a-plane exhibited apparent peaks around 2 theta=$120^{\circ}$((3-300) plane) and 2 theta=$60^{\circ}$ ((11-20) plane), respectively. FWHM values of m-plane measured along a-direction and c-direction were 60 arc see and 57 arcsec respectively, a-plane measured along m-direction and c-direction were 41 arcsec and 51 arcsec respectively. The typical absorption spectra of SiC crystals indicated that each of SiC crystals were the 6H-SiC with fundamental absorption energy of about 3.04 eV. Non-polar planes contained no micropipe on etched surface. The carrier concentration and mobility of non-polar SiC wafers have estimated by Raman spectrum. It was observed that the carrier mobility is low in the area far from seed crystal with compared to other places.

• Nuclear Engineering and Technology
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• v.52 no.10
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• pp.2361-2369
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• 2020

Compton cameras using large scintillators have been developed for high imaging sensitivity. These scintillator-based Compton cameras, however, mainly due to relatively low energy resolution, suffer from undesired background-radiation signals, especially when radioactive materials' activity is very low or their location is far from the Compton camera. To alleviate this problem for a large-size Compton camera, in the present study, a hybrid-type shielding system was designed that combines an active shield with a veto detector and a passive shield that surrounds the active shield. Then, the performance of the hybrid shielding system was predicted, by Monte Carlo radiation transport simulation using Geant4, in terms of minimum detectable activity (MDA), signal-to-noise ratio (SNR), and image resolution. Our simulation results show that, for the most cases, the hybrid shielding system significantly improves the performance of the large-size Compton camera. For the cases investigated in the present study, the use of the shielding system decreased the MDA by about 1.4, 1.6, and 1.3 times, increased the SNR by 1.2-1.9, 1.1-1.7, and 1.3-2.1 times, and improved the image resolution (i.e., reduced the FWHM) by 7-8, 1-6, and 3-5% for ¹³⁷Cs, ⁶⁰Co, and ¹³¹I point source located at 1-5 m from the imaging system, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.07a
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• pp.282-283
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• 2005

Ion beam assisted deposition(IBAD) technique was used to produce biaxially textured polycrystalline MgO thin films for high critical current YBCO coated conductor. Hastelloy tapes were continuous electropolished with very smooth surface for IBAD-MgO deposition, RMS roughness of Hastelloy tape values below 2 nm and local slope of less than $1^{\circ}$. After the polishing of the tape an amorphous $Y_2O_3$ and $Al_2O_3$ are deposited Biaxially textured MgO was deposited on amorphous layer bye-beam evaporation with a simultaneous bombardment of high energy ions. We had developed the RHEED to measure in-situ biaxial texture of film surface as thin as tens angstrom. And also ex-situ characterization of buffer layers was studied using XRD and SEM. The full-width at half maximum(FWHM) out of plane texture of IBAD-MgO template is $4^{\circ}$.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.204.2-204.2
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• 2013

Wide band gap II-VI semiconductors have attracted the interest of many research groups during the past few years due to the possibility of their applications in light-emitting diodes and laser diodes. Among the II-VI semiconductors, ZnO is an important optoelectronic device material for use in the violet and blue regions because of its wide direct band gap (Eg ~3.37 eV) and large exciton binding energy (60 meV). F-doped ZnO (FZO) and undoped ZnO thin films were grown onto quartz substrate by the sol-gel spin-coating method. The doping level in the solution, designated by F/Zn atomic ratio of was varied from 0 to 5 in 1 steps. To investigate the effects of the structure and optical properties of FZO thin films were investigated using X-ray diffraction (XRD), UV-visible spectroscopy, and photoluminescence (PL). In the XRD, the residual stress, FWHM, bond length, and average grain size were changed with increasing the doping concentration. For the PL spectra, the high INBE/IDLE ratio of the FZO thin films doping concentration at 1 at.% than the other samples.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.196.2-196.2
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• 2013

본 연구에서는 분자선 에피택시 (MBE)법으로 성장된 InAs submonolayer quantum dot (SML-QD)을 태양전지에 응용하여 광학 및 전기적 특성을 평가하였다. 본 연구에서 사용된 양자점 태양전지(quantum dot solar cell, QDSC)의 구조는 n+-GaAs 기판 위에 n+-GaAs buffer와 n-GaAs base layer를 차례로 성장 한 후, 활성영역에 InAs/InGaAs SML-QD와 n-GaAs spacer layer를 8주기 형성하였다. 그 위에 p+-GaAs emitter, p+-AlGaAs window layer를 성장하고 ohmic contact을 위하여 p+-GaAs 를 성장하였다. SML-QD 구조의 두께는 0.3 ML 이며, 이때 SML-QD의 적층수를 4 stacks 으로 고정하였다. SML-QD 와의 비교를 위하여 2.0 ML크기의 InAs자발 형성 양자점 태양전지(SK-QDSC)과 GaAs 단일 접합 태양전지 (reference-SC)를 동일한 성장조건에서 제작하였다. PL 측정 결과, 300 K에서 SML-QD의 발광 피크는 SK-QD 보다 고에너지에서 나타나는데(1.349 eV), 이것은 SML-QD가 SK-QD보다 작은 크기를 가지기 때문으로 사료된다. SML-QD는 single peak를 보이는 반면, SK-QD는 dual peaks (1.112 / 1.056 eV)을 확인하였다. SML-QD의 반치폭(full width at half maximum, FWHM)이 SK-QD에 비하여 작은 것으로 보아 SML-QD가 SK-QD보다 양자점 크기 분포의 균일도가 높은 것으로 해석된다. Illumination I-V 측정 결과, SML-QDSC의 개방 전압(VOC) 과 단락전류밀도(JSC)는 SK-QDSC의 값과 비교해 보면, 각각 47 mV와 0.88 mA/cm2만큼 증가하였다. 이는 SK-QD보다 상대적으로 작은 크기를 가진 SML-QD로 인해 VOC가 증가되었으며, SML-QD가 SK-QD 보다 태양광을 흡수할 수 있는 영역이 비교적 적지만, QD내에 존재하는 energy level에서 탈출 할 수 있는 확률이 더 높음으로써 JSC가 증가한 것으로 분석 된다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.35 no.3
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• pp.292-296
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• 2022

(La_0.5Nd_0.2Sr_0.3)MnO₃ specimens were prepared by a solid-state reaction. In all specimens, X-ray diffraction patterns of an orthorhombic structure were shown. The fracture surfaces of (La_0.5Nd_0.2Sr_0.3)MnO₃ specimens showed a transgranular fracture pattern be possibly due to La ions (0.122 nm) as a perovskite A-site dopant substituting for Nd ions (0.115 nm) having a small ionic radius. The full-width at half maximum (FWHM) of the Mn 2p XPS spectra showed a value greater than that [8] of the single valence state, which is believed to be due to the overlapping of Mn²⁺, Mn³⁺, and Mn⁴⁺ ions. The dependence of Mn 2p spectra on the Mn³⁺/Mn⁴⁺ ratio according to sintering time was not observed. Electrical resistivity resulted in the minimum value of 100.7 Ω-cm for the specimen sintered for 9 hours. All specimens show a typical negative temperature coefficient of resistance (NTCR) characteristics. In the 9-hour sintered specimen, TCR, activation energy, and B25/65-value were -1.24%/℃, 0.19 eV, and 2,445 K, respectively.