• Journal of the Korea Institute of Military Science and Technology
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• v.12 no.6
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• pp.727-732
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• 2009

In this paper, the dependence of the Kalman filter-based emitter location algorithm on the initial estimate is investigated. Given all the LOB data, the initial estimate of the emitter location is obtained from the linear LSE algorithm with the former LOB data. Using the initial estimate, the Kalman filter algorithm is applied with the remaining LOB data to update the initial estimate. It is shown that as the number of data used in the calculation of the initial estimate increases, the accuracy of the final estimate is improved and the total computational complexity of obtaining the initial estimate and the final estimate increases. In addition, the dependence of the performance of the Kalman filter algorithm on the predefined constant is illustrated.

• Proceedings of the KSME Conference
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• 2007.05a
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• pp.1277-1281
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• 2007

A Nano-tip as a cold field emitter for inducing a field emission current has manufactured in many ways. In the paper, the electrochemical etching method is used. Thus, in order to optimize the final shape as the field emitter, the reliable fabrication system for electrochemical etching was constructed. In addition, the effective parameters such as applied voltage, submerged length, meniscus height, electrolyte concentration and environmental condition(vibration, humidity, cut-off time) have investigated in detail. By controlling the parameters, reliable tungsten tip for field emitter was fabricated. And the fabricated tungsten tip was evaluated optically. Finally, the very sharp apex of the tungsten tip was observed with scanning electron microscope.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.367-372
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• 2006

A carbon nanotube field emission display(CNT FED) panel with a 2 inch diagonal size was fabricated using a screen printing of a prepared photo-sensitive CNT paste and vacuum in-line sealing technology. After a surface treatment of the patterned CNT, only the carbon nanotube tips are uniformly exposed on the surface. The diameter of the exposed CNTs are usually about 20 nm. Using the photo-sensitive CNT paste, we have developed a triode type CNT FEA with a self-aligned gate-emitter structure. The turn on voltage was around 100 V which corresponds to according the turn on field of about $40V/{\mu}m$. By the creation of a self-aligned gate-emitter structure, it is expected that the screen printed photo-sensitive CNT paste is promising as a good candidate for the large size field emission display.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2006.11a
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• pp.30-33
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• 2006

Onset voltage plays a crucial role in the design of a spray microthruster. This paper presents an analytical electrostatic model to predict the behavior of onset voltage in an array of emitters. The basic idea of this method is to superimpose the electric potentials obtained from each individual emitter in an array of emitters. The results show that if one emitter operates and the other neighboring emitters are dry, the potential required for cone-jet spraying generally increases as the emitter spacing decreases (due to electrical shielding). However at very close spacing the potential can decrease. If all emitters operate at the same time, the phenomenon that even at very close spacing the onset voltage required for cone-jet spraying increases merely as the emitter spacing decreases.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.1198-1201
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• 2006

Carbon nanotubes (CNTs) have used as an electron field emitter of the field emission display (FED) due to their characteristics of high-electron emission, rapid response and low power consumption. However, to commercialize the FED with CNT emitter, some fundamental problems regarding life time and emission efficiency have to be solved. In this study, we investigated the metal coated CNT as a field emitter on which metal nanoparticles were coated by chemical modification. Metal nanoparticles, such as Ru, Pd, were synthesized by solution reduction method. The size of the metal nanoparticle has the range of 2 - 5 nm. Surface was modified chemically with the use of ionic surfactant which changed the surface charge of nanoparticles.

• Proceedings of the IEEK Conference
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• 2000.11b
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• pp.229-232
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• 2000

InP/lnGaAs HPT's were fabricated by employing Indium Tin Oxide(ITO) transparent emitter contact. The device showed the current gaing 70 was obtained but the emitter series resistance was significantly increased. the electrical charateristics of the device were similar to HBT's. However Vceoff was shifted the positive direction. Such a shift ma be resulted from the formation of the shottky barrier rather than the ohmic contact between ITO and n+ InP emitter.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.1
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• pp.129-137
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• 1995

AlGaAs/GaAs HBTs have been fabricated using SABM (Self-Aligned Base Metal) process technique. The mesa type HBTs were fabricated through following steps: isolation implant, wet etching, metal lift-off, and airbridge interconnection process. The fabricated HBTs with 2umx10um size emitter showed a common emitter current gain of 10 at a collector current density of Jk=100kA/cm$^{2}$, a breakdown volgate BVCEO of 8V, and the ideality factors of base and collector junctions of 1.6 and 1.1, respectively. On-wafer S-Parameter measurement at 0.5~18GHz has been made for the characterization of the common emitter HBTx with a 2umx10um size emitter. The extrapolated current gain cut-off frequency of ft=30GHz and maximum oscillation frequency of fmax=23 GHz were obtained at a collector current density of Jc=70kA/cm$^{2}$. Small signal HBT equivalent circuit was extracted from the S-Parameter data.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.33 no.2
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• pp.83-87
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• 2020

In this letter, we propose and analyze a new asymmetric structure that can be used for next-generation power semiconductor devices. We compare and analyze the electrical characteristics of the proposed device with respect to those of symmetric devices. The proposed device has a p-emitter on the right side of the cell. The peak electric field is reduced by the shielding effect caused by the p-emitter structure. Consequently, the breakdown voltage is increased. The proposed asymmetric structure has an approximately 100% higher Baliga's figure of merit (~94.22 MW/㎠) than the symmetric structure (~46.93 MW/㎠), and the breakdown voltage of the device increases by approximately 70%.

• Proceedings of the Korean Institute of IIIuminating and Electrical Installation Engineers Conference
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• 2008.05a
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• pp.151-154
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• 2008

The field emission lamps have the advantages to their cold cathode-characteristic and the eco-friendly, We realized that the dual emitter system showed very simple structure which gate and cathode electrodes are formed on the same glass surface. In this paper, we reported the properties of dual emitters depended on variation of gate width and spacing for optimum panel structure. In combination of dual emitter structure and bi-polar driving, electron beam spreads more than normal gate structure or diode structure, and emission uniformity increased in dual emitter structure at 5"-diagonal.

• Journal of the Korea Institute of Military Science and Technology
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• v.9 no.1 s.24
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• pp.99-108
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• 2006

In this paper, we analyzed the characteristics of emitter geolocation coverage area within which the emitter lies with a specified probability based on the LOBs(Line of Bearing) of sensors. Stansfield and MSD algorithms were applied to calculate BPE(Best Point Estimate), EEP(Elliptical Error Probable) and CEP(Circular Error Probable), They used the weighting factors composed of ${\sigma}_{Phi}$ (bearing error), QF(quality factor), $P_{e}$ (probability being inside) to optimize the performance. The characteristics of EEP was investigated in the change of them and those of CEP was analyzed based on the deployment of sensors.