• Title/Summary/Keyword: emission broadening

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Elemental Composition of the Soils using LIBS Laser Induced Breakdown Spectroscopy

  • Muhammad Aslam Khoso;Seher Saleem;Altaf H. Nizamani;Hussain Saleem;Abdul Majid Soomro;Waseem Ahmed Bhutto;Saifullah Jamali;Nek Muhammad Shaikh
    • International Journal of Computer Science & Network Security
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    • v.24 no.6
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    • pp.200-206
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    • 2024
  • Laser induced breakdown spectroscopy (LIBS) technique has been used for the elemental composition of the soils. In this technique, a high energy laser pulse is focused on a sample to produce plasma. From the spectroscopic analysis of such plasma plume, we have determined the different elements present in the soil. This technique is effective and rapid for the qualitative and quantitative analysis of all type of samples. In this work a Q-switched Nd: YAG laser operating with its fundamental mode (1064 nm laser wavelength), 5 nanosecond pulse width, and 10 Hz repetition rate was focused on soil samples using 10 cm quartz lens. The emission spectra of soil consist of Iron (Fe), Calcium (Ca), Titanium (Ti), Silicon (Si), Aluminum (Al), Magnesium (Mg), Manganese (Mn), Potassium (K), Nickel (Ni), Chromium (Cr), Copper (Cu), Mercury (Hg), Barium (Ba), Vanadium (V), Lead (Pb), Nitrogen (N), Scandium (Sc), Hydrogen (H), Strontium (Sr), and Lithium (Li) with different finger-prints of the transition lines. The maximum intensity of the transition lines was observed close to the surface of the sample and it was decreased along the axial direction of the plasma expansion due to the thermalization and the recombination process. We have also determined the plasma parameters such as electron temperature and the electron number density of the plasma using Boltzmann's plot method as well as the Stark broadening of the transition lines respectively. The electron temperature is estimated at 14611 °K, whereas the electron number density i.e. 4.1 × 1016 cm-3 lies close to the surface.

Structural and optical properties of Si nanowires grown by Au-Si island-catalyzed chemical vapor deposition (Au-Si 나노점을 촉매로 성장한 Si 나노선의 구조 및 광학적 특성 연구)

  • Lee, Y.H.;Kwak, D.W.;Yang, W.C.;Cho, H.Y.
    • Journal of the Korean Vacuum Society
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    • v.17 no.1
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    • pp.51-57
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    • 2008
  • we have demonstrated structural evolution and optical properties of Si-nanowires (NWs) synthesized on Si (111) substrates with nanoscale Au-Si islands by rapid thermal chemical vapor deposition (RTCVD). The Au-Si nano-islands (10-50nm in diameter) were employed as a liquid-droplet catalysis to grow Si-NWs via vapor-liquid-solid mechanism. The Si-NWs were grown by a mixture gas of SiH4 and H2 at a pressure of 1.0 Torr and temperatures of $500{\sim}600^{\circ}C$. Scanning electron microscopy measurements showed that the Si-NWs are uniformly sized and vertically well-aligned along <111> direction on Si (111) surfaces. The resulting NWs are ${\sim}60nm$ in average diameter and ${\sim}5um$ in average length. High resolution transmission microscopy measurements indicated that the NWs are single crystals covered with amorphous SiOx layers of ${\sim}3nm$ thickness. In addition, the optical properties of the NWs were investigated by micro-Raman spectroscopy. The downshift and asymmetric broadening of the Si main optical phonon peak were observed in Raman spectra of Si-NWs, which indicates a minute stress effects on Raman spectra due to a slight lattice distortion led by lattice expansion of Si-NW structures.

Structural and optical properties of Si nanowires grown with island-catalyzed Au-Si by rapid thermal chemical vapor deposition(RTCVD) (Au-Si을 촉매로 급속화학기상증착법으로 성장한 Si 나노선의 구조 및 광학적 특성 연구)

  • Kwak, D.W.;Lee, Y.H.
    • Journal of the Korean Vacuum Society
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    • v.16 no.4
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    • pp.279-285
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    • 2007
  • We have demonstrated structural evolution and optical properties of the Si-NWs on Si (111) substrates with synthesized nanoscale Au-Si islands by rapid thermal chemical vapor deposition(RTCVD). Au nano-islands (10-50nm in diameter) were employed as a liquid-droplet catalysis to grow Si-NWs via vapor-liquid-solid mechanism. Si-NWs were grown by a mixture gas of $SiH_4\;and\;H_2$ at pressures of $0.1{\sim}1.0$Torr and temperatures of $450{\sim}650^{\circ}C$. SEM measurements showed the formation of Si-NWs well-aligned vertically for Si (111) surfaces. The resulting NWs are 30-100nm in diameter and $0.4{\sim}12um$ in length depending on growth conditions. HR-TEM measurements indicated that Si-NWs are single crystals convered with about 3nm thick layers of amorphous oxide. In addition, optical properties of NWs were investigated by micro-Raman spectroscopy. The downshift and asymmetric broadening of the Si optical phonon peak with a shoulder at $480cm^{-1}$ were observed in Raman spectra of Si-NWs.