• 한국광학회지
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• 제20권1호
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• pp.53-56
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• 2009

타원법을 사용하여 인간 중간엽 줄기세포의 광학상수와 두께의 영상정보를 정량적으로 구하였다. 영상 타원계를 이용하여 in vitro 환경에서 세포의 핵(nucleus)과 세포체(cell body)의 타원상수 $\Delta$, $\Psi$를 2차원 영상정보 형태로 구한 다음 각 화소별로 타원상수들을 수치해석적 역방계산하여 굴절률과 두께의 영상정보를 얻었다. 세포의 핵 영역과 세포체 영역에서 줄기세포의 두께와 굴절률 값을 2차원 영상정보 형태로 제시하였다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1994년도 춘계 학술발표 강연 및 논문 개요집
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• pp.134-134
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• 1994

• 한국전기전자재료학회논문지
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• 제23권3호
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• pp.228-233
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• 2010

We studied the optical characteristics correlated with low dielectric constants of low-k SiOCH thin films through ellipsometry. The low-k SiOCH thin films were prepared by CCP-PECVD method using BTMSM(Bis-trimethylsilylmethane) precursors deposited on p-Si wafer. The Si-O-CHx, Si-O-Si, Si-CHx, CHx and Si-H bonding groups were specified by FTIR spectroscopic spectra, and the groups coupled with the nano-porous structural organic/inorganic hybrid-type of SiOCH thin films which has extremely low dielectric constant close to 2.0. The structural groups includes highly dense pore as well as ions in SiOCH thin films affecting to complex refraction characteristics of single layer on the p-Si wafer. The structural complexity originate the complex refractive constants of the films, and resulted the elliptical polarization of the incident linearly polarized light source of Xe-light source in the range from 190 nm to 2100 nm. Phase difference and amplitude ratio between s wave and p wave propagating through SiOCH thin film was studied. After annealing, the amplitude of p wave was reduced more than s wave, and phase difference between p and s wave was also reduced.

• Journal of the Optical Society of Korea
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• 제18권4호
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• pp.350-358
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• 2014

The collapse of Langmuir monolayers of arachidic acid (AA) on water at various rates of molecular area compression has been investigated in situ by imaging ellipsometry (IE). The thickness of the collapsed AA molecules, which are inherently inhomogeneous, was determined by IE with a spatial resolution of a few microns. For the analysis, we determined the dielectric function of AA monolayers from 380 to 1690 nm by conventional spectroscopic ellipsometry. Compression rates ranged from 0.23 to $0.94{\AA}^2/min$. A change of multilayer domains was observed in the in situ IE images. Lower compression rates resulted in more uniform collapsed films. Our experimental results correspond with previous theoretical simulations.

• 한국광학회지
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• 제12권6호
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• pp.472-478
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• 2001

가변입사각 분광타원법(Variable Angle Spectroscopic Ellipsometry)을 사용하여 유기발광소자(OLED)의 발광층인 유기박막 의 광학상수와 두께를 결정하였다. 광투과영역에서 모델링분석으로 박막의 평균두께와 굴절률 분산식을 결정하고, 광흡수영역으로 확장하여 유기막의 다층구조, 각 층의 두께와 밀도 그리고 각 파장에서의 복소굴절률을 결정하였다. 분광광도계를 사용하여 구한 투과율 스펙트럼을 가변입사각 분광타원법을 사용하여 결정한 다층구조 및 복소굴절률로 계산한 투과율 스펙트럼과 비교하여 분석의 정확성을 확인하였다.

• 한국결정성장학회지
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• 제8권2호
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• pp.240-248
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• 1998

화학기상증착 방법에 의한 다결정 다이아몬드 박막성장을 위한 공정가운데 가장 많이 사용되는 기법중의 하나가 바로 플라즈마에 의한 방법이다. 특히 플라즈마 화학기상증착(Plasma-Enhanced CVD)기술에 의한 다이아몬드 박막응용은 그 공정에 대한 세부 조정을 통하여 더욱 향상시킬 수 있다. 다이아몬드 박막증착의 경우 중요 변수들은 다이아몬드 필름이 증착되는 기판(substrate)의 온도, $CH_4/H_2$가스비율, 전체가스 압력 및 가스 excitation에너지 등이다. 분광 ellipsometry는 다이아몬드 필름 증착과 관련된 극단적인 환경에서도 물리적인 접촉이나 만들어지는 샘플의 손상없이도 필름자체의 여러 성질뿐만 아니라 기초 샘플의 온도까지도 결정할 수 있는 좋은 방법이다. 이러한 장점들을 이용하여 양질의 다이아몬드 박막을 성장시키기 위한 조건과 그에 따른 박막 특성을 얻기 위하여 분광 ellipsomerry의 사용과 해석이 소개된다. 그리고, 분광 ellipsometry를 이용, 플라즈마 화학기상증착 기술에 의하여 성장되는 다이아몬드 박막으로부터 나타나는 중요 변수들이 결정될 것이며 이러한 변수들은 필름의 두께, 필름에 포함되는 void 및 비다이아몬드의 체적비와, 그들의 시간에 따른 변화등을 포함한다. 그리고 샘플이 원하는 두께까지 성장된 후에 라만 분광기로 측정되어 다이아몬드 성분을 확인한다.

• Transactions on Electrical and Electronic Materials
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• 제13권4호
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• pp.196-199
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• 2012

CdS thin film was prepared on glass substrate by chemical bath deposition in an alkaline solution. The optical properties of CdS thin film were investigated using spectroscopic ellipsometry. The real (${\varepsilon}_1$) and imaginary (${\varepsilon}_2$) parts of the complex dielectric function ${\varepsilon}(E)={\varepsilon}_1(E)+i{\varepsilon}_2(E)$, the refractive index n(E), and the extinction coefficient k(E) of CdS thin film were obtained from spectroscopic ellipsometry. The normal-incidence reflectivity R(E) and absorption coefficient ${\alpha}(E)$ of CdS thin film were obtained using the refractive index and extinction coefficient. The critical points $E_0$ and $E_1$ of CdS thin film were shown in spectra of the dielectric function and optical constants of refractive index, extinction coefficient, normal-incidence reflectivity, and absorption coefficient. The dispersion of refractive index was analyzed by the Wemple-DiDomenico single-oscillator model.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.198-198
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• 2010

The low-k SiOCH thin films were prepared by CCP-PECVD method using BTMSM(Bis-trimethylsilylmethane) precursors deposited on p-Si wafer. The structural complexity originate the complex refractive constants of the films, and resulted the elliptical polarization of the incident linearly polarized light source of Xe-ramp in the range from 190nm to 2100nm. Phase difference and amplitude ratio between s wave and p wave propagating through SiOCH thin film was studied. After annealing, the amplitude of p wave was reduced more than s wave, and phase difference between p and s wave was also reduced.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.I
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• pp.191-194
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• 2005

Evaluating methods of the polar and/or azimuthal anchoring strength coefficients by means of the renormalized transmission spectroscopic ellipsometry are demonstrated. The Anchoring strength coefficients can be evaluated from the measurement of ellipsometric parameters measured by the oblique incident transmission ellipsometry, where the effect of multiplebeam interference is eliminated. The device parameters such as the pretilt angle and cell gap can be determined simultaneously even in the case of the twisted nematic liquid crystal sample cells.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.250-253
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• 2009

Effective methods for monitoring the quality of polycrystalline silicon (poly-Si) films are discussed. Raman spectroscopy is typically used to determine crystallinity of poly-Si, but this method has limitations for data gathering on large substrates for mass production of poly-Si TFT backplanes. Spectroscopic ellipsometry is proposed as an alternative for fast and simple estimation of poly-Si quality on large substrates. By using both ellipsometry and Raman spectroscopy, it is possible to determine whether the quality and uniformity of the poly-Si films meet the criteria required for mass production of TFT backplanes for AMOLED panels.