• 제목/요약/키워드: element doping

검색결과 60건 처리시간 0.03초

전이금속 치환 및 합성방법에 따른 Li-Mn 산화물의 충방전 특성 (Properties of charge/discharge in synthesis method or substituting transition element for Li-Mn Oxide)

  • 지미정;최병현;이대진
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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    • pp.46-46
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    • 2007
  • There has been rapid progress in the portable electronics industry. which has led to a great increase for a demand of portable, lightweight power sources. Lithium 2'nd batteries have met these demand. and many studies on the cahtod materials for the lithium 2,nd batteries have been reported during the last decade. Possible candidates for the cathode materials for lithium 2,nd batteries are $LiCoO_2$, $LiNiO_2$, and $LiMn_2O_4$. Currently $LiCoO_2$ is widely used. but $LiMn_2O_4$ is an excellent alternative material in view of its several advantages such a low cost as well as the wasy availability of raw materials and environmental benignity. In this study, find the most suitable synthesis method that satisfied high capacitor and stability cycle character, etc in Li-Mn oxide for 2'nd batteries. And also made an experiment on doping the $LiMn_2O_4$ spinel with a small amount of metal ions has a remarkable effect on the electrochemical properties and characterics of powder, BET, PSA, Porosity, etc.

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UV 조사에 의한 doped ZnS 나노입자의 annealing 효과 (Optical annealing of doped ZnS nanoparticles through UV irradiation)

  • 이준우;조경아;김현석;김진형;박병준;김상식
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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    • pp.24-27
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    • 2004
  • ZnS nanoparticles were synthesized and doped with $Pr^{3+}\;and\;Mn^{2+}$. Photoluminescence(PL) peaks were observed at 430 nm for pure ZnS, 585 nm for $Mn^{2+}-doped$ ZnS, and at around 430, 460, 480, 495 nm for ZnS nanoparticles doped with $Pr^{3+}$, respectively. For co-doped sample, both characteristics of doping with each element were exhibited. Optical annealing through UV irradiation was carried out in the two atmospheres; air and vacuum. The increases of the luminescence intensity was more considerable in the air, which is attributed to the photo-induced oxidation. In the case of co-doped sample the change of the emission color was observed by UV annealing.

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Optical characteristics of p-type ZnO epilayers doped with Sb by metalorganic chemical vapor deposition

  • Kwon, B.J.;Cho, Y.H.;Choi, Y.S.;Park, S.J.
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2009년도 제38회 동계학술대회 초록집
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    • pp.122-122
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    • 2010
  • ZnO is a widely investigated material for the blue and ultraviolet solid-state emitters and detectors. It has been promoted due to a wide-band gap semiconductor which has large exciton binding energy of 60 meV, chemical stability and low radiation damage. However, there are many problems to be solved for the growth of p-type ZnO for practical device applications. Many researchers have made an efforts to achieve p-type conductivity using group-V element of N, P, As, and Sb. In this letter, we have studied the optical characteristics of the antimony-doped ZnO (ZnO:Sb) thin films by means of photoluminescence (PL), PL excitation, temperature-dependent PL, and time-resolved PL techniques. We observed donor-to-acceptor-pair transition at about 3.24 eV with its phonon replicas with a periodic spacing of about 72 meV in the PL spectra of antimony-doped ZnO (ZnO:Sb) thin films at 12 K. We also investigate thermal activation energy and carrier recombination lifetime for the samples. Our result reflects that the antimony doping can generate shallow acceptor states, leading to a good p-type conductivity in ZnO.

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Rigorous Design of 22-nm Node 4-Terminal SOI FinFETs for Reliable Low Standby Power Operation with Semi-empirical Parameters

  • Cho, Seong-Jae;O'uchi, Shinichi;Endo, Kazuhiko;Kim, Sang-Wan;Son, Young-Hwan;Kang, In-Man;Masahara, Meishoku;Harris, James S.Jr;Park, Byung-Gook
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제10권4호
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    • pp.265-275
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    • 2010
  • In this work, reliable methodology for device design is presented. Based on this method, the underlap length has been optimized for minimizing the gateinduced drain leakage (GIDL) in a 22-nm node 4-terminal (4-T) silicon-on-insulator (SOI) fin-shaped field effect transistor (FinFET) by TCAD simulation. In order to examine the effects of underlap length on GIDL more realistically, doping profile of the source and drain (S/D) junctions, carrier lifetimes, and the parameters for a band-to-band tunneling (BTBT) model have been experimentally extracted from the devices of 90-nm channel length as well as pnjunction test element groups (TEGs). It was confirmed that the underlap length should be near 15 nm to suppress GIDL effectively for reliable low standby power (LSTP) operation.

Characterization of Wavelength Effect on Photovoltaic Property of Poly-Si Solar Cell Using Photoconductive Atomic Force Microscopy (PC-AFM)

  • Heo, Jinhee
    • Transactions on Electrical and Electronic Materials
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    • 제14권3호
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    • pp.160-163
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    • 2013
  • We investigated the effect of light intensity and wavelength of a solar cell device by using photoconductive atomic force microscopy (PC-AFM). The $POCl_3$ diffusion doping process was used to produce a p-n junction solar cell device based on a Poly-Si wafer and the electrical properties of prepared solar cells were measured using a solar cell simulator system. The measured open circuit voltage ($V_{oc}$) is 0.59 V and the short circuit current ($I_{sc}$) is 48.5 mA. Also, the values of the fill factors and efficiencies of the devices are 0.7% and approximately 13.6%, respectively. In addition, PC-AFM, a recent notable method for nano-scale characterization of photovoltaic elements, was used for direct measurements of photoelectric characteristics in local instead of large areas. The effects of changes in the intensity and wavelength of light shining on the element on the photoelectric characteristics were observed. Results obtained through PC-AFM were compared with the electric/optical characteristics data obtained through a solar simulator. The voltage ($V_{PC-AFM}$) at which the current was 0 A in the I-V characteristic curves increased sharply up to 1.8 $mW/cm^2$, peaking and slowly falling as light intensity increased. Here, $V_{PC-AFM}$ at 1.8 $mW/cm^2$ was 0.29 V, which corresponds to 59% of the average $V_{oc}$ value, as measured with the solar simulator. Also, while light wavelength was increased from 300 nm to 1,100 nm, the external quantum efficiency (EQE) and results from PC-AFM showed similar trends at the macro scale, but returned different results in several sections, indicating the need for detailed analysis and improvement in the future.

Magnetic Properties of FePt:C Nanocomposite Film

  • Ko, Hyun-Seok;A. Perumal;Shin, Sung-Chul
    • 한국자기학회:학술대회 개요집
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    • 한국자기학회 2003년도 하계학술연구발표회 및 한.일 공동심포지엄
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    • pp.220-221
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    • 2003
  • Equiatomic FePt and CoPt alloy thin films have received considerable attention as possible magnetic and magneto-optic recording because of their high magnetic anisotropy energy and high coercivity. The high coercivity in these thin films is due to the presence of finely dispersed ordered FePt phase mixed with disordered FePt phase. However, a high temperature treatment, either substrate heating during deposition or post annealing, is needed to obtain the ordered L1$\_$0/ phase with high value of magneto crystalline anisotropy. Recent microstructural studies on these films suggest that the average grain size ranges from 10-50 nm and the grains are magnetically coupled between each other. On the other hand, the ultrahigh-density magnetic recording media with low media noise imposes the need of a material, which consists of magnetically isolated grains with size below 10 nm. The magnetic grain isolation can be controlled by the amount of additional non-magnetic element in the system which determines the interparticle separation and therefore the interparticle interactions. Recently, much research work has been done on various non-magnetic matrices. Preliminary studies showed that the samples prepared in B$_2$O$_3$ and Carbon matrices have shown strong perpendicular anisotropy and fine grain size down to 4nm, which suggest these nanocomposite films are very promising and may lead to the realization of a magnetic medium capable of recording densities beyond 1 Tb/in$^2$. So, in this work, the effect of Carbon doping on the magnetic properties of FePt nanoparticles were investigated.

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가시광 활성 WO3-TiO2 복합체 광촉매의 제조 및 이의 특성 평가 (Preparation of WO3-TiO2 Photocatalyst and Evaluation of Its Photo-activity in the Visible Light Range)

  • 여인철;강인철
    • 한국분말재료학회지
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    • 제20권6호
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    • pp.474-478
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    • 2013
  • The most general photocatalyst, $TiO_2$ and $WO_3$, are acknowledged to be ineffective in range of visible light. Therefore, many efforts have been directed at improving their activity such as: band-gap narrowing with non-metal element doping and making composites with high specific surface area to effectively separate electrons and holes. In this paper, the method was introduced to prepare a photo-active catalyst to visible irradiation by making a mixture with $TiO_2$ and $WO_3$. In the $TiO_2-WO_3$ composite, $WO_3$ absorbs visible light creating excited electrons and holes while some of the excited electrons move to $TiO_2$ and the holes remain in $WO_3$. This charge separation reduces electron-hole recombination resulting in an enhancement of photocatalytic activity. Added Ag plays the role of electron acceptor, retarding the recombination rate of excited electrons and holes. In making a mixture of $TiO_2-WO_3$ composite, the mixing route affects the photocatalytic activity. The planetary ball-mill method is more effective than magnetic stirring route, owing to a more effective dispersion of aggregated powders. The volume ratio of $TiO_2(4)$ and $WO_3(6)$ shows the most effective photocatalytic activity in the range of visible light in the view point of effective separation of electrons and holes.

Fabrication of Zn-treated ACF/TiO2 Composites and Their Photocataytic Activity for Degradation of Methylene Blue

  • Go, Yu-Gyoung;Zhang, Feng-Jun;Chen, Ming-Liang;Oh, Won-Chun
    • 한국재료학회지
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    • 제19권3호
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    • pp.142-150
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    • 2009
  • In this paper, non-treated ACF (Activated Carbon Fiber) /$TiO_2$ and Zn-treated ACF/$TiO_2$ were prepared. The prepared composites were characterized in terms of their structural crystallinity, elemental identification and photocatalytic activity. XRD patterns of the composites showed that the non-treated ACF/$TiO_2$ composite contained only typical single and clear anatase forms while the Zn-treated ACF/$TiO_2$ contained a mixed anatase and rutile phase with a unique ZnO peak. SEM results show that the titanium complex particles are uniformly distributed on and around the fiber and that the titanium complex particles are more regularly distributed on and around the ACF surfaces upon an increase of the $ZnCl_2$ concentration. These EDX spectra show the presence of peaks from the C, O and Ti elements. Moreover, peaks of the Zn element were observed in the Zn-treated ACF/$TiO_2$ composites. The prominent photocatalytic activity of the Zn-treated ACF/$TiO_2$ can be attributed to the three different effects of photo-degradation: doping, absorptivity by an electron transfer, and adsorptivity of porous ACFs between the Zn-$TiO_2$ and Zn-ACF.

$CCI_4$ 를 사용하여 베이스를 탄소도핑한 AlGaAs/GaAs HBT의 제작 및 특성 (Fabrication and Characteristic of C-doped Base AlGaAs/GaAs HBT using Carbontetrachloride $CCI_4$)

  • 손정환;김동욱;홍성철;권영세
    • 전자공학회논문지A
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    • 제30A권12호
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    • pp.51-59
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    • 1993
  • A 4${\times}10^{19}cm^{3}$ carbon-doped base AlGaAs/GaAs HBY was grown using carbontetracholoride(CCl$_4$) by atmospheric pressure MOCVD. Abruptness of emitter-base junction was characterized by SIMS(secondary ion mass spectorscopy) and the doping concentration of base layer was confirmed by DXRD(double crystal X-ray diffractometry). Mesa-type HBTs were fabricated using wet etching and lift-off technique. The base sheet resistance of R$_{sheet}$=550${\Omega}$/square was measured using TLM(transmission line model) method. The fabricated transistor achieved a collector-base junction breakdown voltage of BV$_{CBO}$=25V and a critical collector current density of J$_{O}$=40kA/cm$^2$ at V$_{CE}$=2V. The 50$\times$100$\mu$$^2$ emitter transistor showed a common emitter DC current gain of h$_{FE}$=30 at a collector current density of JS1CT=5kA/cm$^2$ and a base current ideality factor of ηS1EBT=1.4. The high frequency characterization of 5$\times$50$\mu$m$^2$ emitter transistor was carried out by on-wafer S-parameter measurement at 0.1~18.1GHz. Current gain cutoff frequency of f$_{T}$=27GHz and maximum oscillation frequency of f$_{max}$=16GHz were obtained from the measured Sparameter and device parameters of small-signal lumped-element equivalent network were extracted using Libra software. The fabricated HBT was proved to be useful to high speed and power spplications.

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Photocatalytic CO2 Reduction over g-C3N4 Based Materials

  • Cai, Wei-Qin;Zhang, Feng-Jun;Kong, Cui;Kai, Chun-Mei;Oh, Won-Chun
    • 한국재료학회지
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    • 제30권11호
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    • pp.581-588
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    • 2020
  • Reducing CO2 into high value fuels and chemicals is considered a great challenge in the 21st century. Efficiently activating CO2 will lead to an important way to utilize it as a resource. This article reviews the latest progress of g-C3N4 based catalysts for CO2 reduction. The different synthetic methods of g-C3N4 are briefly discussed. Article mainly introduces methods of g-C3N4 shape control, element doping, and use of oxide compounds to modify g-C3N4. Modified g-C3N4 has more reactive sites, which can significantly reduce the probability of photogenerated electron hole recombination and improve the performance of photocatalytic CO2 reduction. Considering the literature, the hydrothermal method is widely used because of its simple equipment and process and easy control of reaction conditions. It is foreseeable that hydrothermal technology will continue to innovate and usher in a new period of development. Finally, the prospect of a future reduction of CO2 by g-C3N4-based catalysts is predicted.