• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.63-66
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• 2000

In this paper, we present the simulation of the heterojunction bipolar transistor with different Emitter-Base junction structures. Our simulation results include effect of setback and graded layer. We prove the emitter efficiency's improvement through setback and graded layer. In 1995, the analytical equations of electric field, electrostatic potential, and junction capacitance for abrupt and linearly graded heterojunctions with or without a setback layer was derived. But setback layer and linearly graded layer's recombination current was considered numerically. Later, recombination current model included setback layer and graded layer will be proposed. New recombination current model also wile include abrupt heterojunction's recombination current model. In this paper, the material parameters of the heterojunction bipolar transistor with different Emitter-Base junction structures is introduced.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.13 no.2
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• pp.106-113
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• 2000

This study describes how a properly calibrated simulation method could be used to investigate the latchup immunity characteristics among the various high energy ion implanted CMOS twin well (retro-grade/BILLI/BL) structures. To obtain the accurate quantitative simulation analysis of retrograde well, a global tuning procedure and a set of grid specifications for simulation accuracy and computational efficiency are carried out. The latchup characteristics of BILLI and BL structures are well predicted by applying a calibrated simulation method for retrograde well. By exploring the potential contour, current flow lines, and electron/hole current densities at the holding condition, we have observed that the holding voltage of BL structure is more sensitive to the well design rule (p+to well edge space /n +to well edge space) than to the retrograde well itself.

• Transactions on Electrical and Electronic Materials
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• v.17 no.1
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• pp.29-32
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• 2016

Using the various exchange-correlation functionals, such as LDA, GGA-PBE, GGA-PBEsol and GGA-AM05 functionals, first principle studies were conducted to determine the structures of paraelectric and ferroelectric PbTiO₃. Based on the structures determined by the various functionals, the piezoelectric properties of PbTiO₃ are predicted under the density-functional perturbation theory (DFPT). The present prediction with the various GGA functionals are closer to the experimental findings compared to the LDA values. The present DFT calculations using the GGA-PBEsol functional estimate the experimental data more reasonably than the conventional LDA and GGA fucntionals. The GGA-AM05 functional also predicts the experimental data as well as the GGA-PBEsol. The piezoelectric tensor calculated with PBEsol is relatively insensitive to pressure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.343-346
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• 2000

This paper presents the characteristics of low consumption, high-response time hot-film type micro-flowsensors with SOI(Si-on-insulator) and trench structures. Output voltages increased due to increase of heat-loss from sensor to external. Compared with no-trench on the SOI structure, the micro-flowsensors with trench structures have properties of high output voltage and low consume power. Output voltage of micro-flowsensors with SOI and trench structures was 250 mV at $N_2$ flow rate of 2000 sccm/min, heating power of 0.3 W. The response time was about 85 msec when input flow was step-input.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.376-379
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• 2003

In this paper, a novel processing technique for fabrication of high-temperature MEMS based on polymer-derived SiCN microstructures is described. PDMS molds are fabricated on SU-8 photoresist using standard UV-photolithographic processes. Liquid precursors are injected into the PDMS mold. And then, the resulting solid polymer structures are crosslinked under isostatic pressure, and pyrolyzed to form a ceramic capable of withstanding over $1500^{\circ}C$. These fabricated SiCN structures would be applied for high-temperature applications, such as heat exchanger and combustion chamber.

• Journal of the Semiconductor & Display Technology
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• v.20 no.4
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• pp.167-170
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• 2021

Integrated passive device (IPD) technology has emerged with the need for 5G. In order to integrate and miniaturize capacitors inside IPD, various studies are actively performed using high-k materials and trench structures. In this paper, an EM(Electromagnetic) simulation study was performed by applying an oxide dielectric to the capacitors having a various trench type structures. Commercially available materials HfO₂, Al₂O₃, and Ta₂O₅ are applied to non, circle, trefoil, and quatrefoil type trench structures to confirm changes in each material or structure. As a result, the bigger the capacitor area and the higher dielectric constant of the oxide dielectric, the insertion loss tended to decrease.

• Journal of the Korean Magnetics Society
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• v.16 no.2
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• pp.111-114
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• 2006

We investigated the magnetism and electronic structures for the layered structures consisting of (110) layers of zinc-blende CrAs and MnAs. We calculated the electronic structures for $(CrAs)_3(MnAs)_3(110)$ superlattice consisted of alternating three layers of CrAs(110) and MnAs(110) by the full-potential linearized augmented plane wave (FLAPW) method. The calculated magnetic moment of Cr in interface layer ($3.07\;\mu_B$) was slightly larger than that of Cr atom in center layer ($3.06\;\mu_B$), while that of interface Mn atom ($3.74\;\mu_B$) was slightly smaller than the value of Mn atom in center layer ($3.76\;\mu_B$). The electronic structure and half-metallicity in this superlattice were discussed using the calculated density of states.

• Bulletin of the Korean Chemical Society
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• v.33 no.5
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• pp.1465-1469
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• 2012

For given electrolytes, different behaviors of anodic aluminum oxide (AAO) and anodic titanium oxide (ATO) during electrochemical thinning are explained by ionic and electronic current modes. Branched structures are unavoidably created in AAO since the switch of ionic to electronic current is slow, whereas the barrier oxide in ATO is thinned without formation of the branched structures. In addition, pore opening can be possible in ATO if chemical etching is performed after the thinning process. The thinning was optimized for complete pore opening in ATO and potential-current behavior is interpreted in terms of ionic current-electronic current switching.

• JSTS:Journal of Semiconductor Technology and Science
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• v.12 no.2
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• pp.219-229
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• 2012

In the course of feasibility study the necessity of implementing electrochemical methods as an inline metrology technique to characterize semiconductor nano structures for a Deep Trench Dynamic Random Access Memory (DT-DRAM) (e.g. ultra shallow junctions USJ) was discussed. Hereby, the state of the art semiconductor technology on the advantages and disadvantages of the most recently used analytical techniques for characterization of nano electronic devices are mentioned. Various electrochemical methods, their measure relationship and correlations to physical quantities are explained. The most important issue of this paper is to prove the novel usefulness of the electrochemical micro cell in the semiconductor industry.

• Proceedings of the Korean Society For Composite Materials Conference
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• 2000.04a
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• pp.175-183
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• 2000

The internal residual stresses within the multilayered structure with shan interface induced by the difference in thermal expansion coefficient between the materials of adjacent layers often provide the source of failure such as delamination of interfaces and etc. Recent development of the multilayered structure with functionally graded interface would be the solution to prevent this kind of failure. However a systematic thermo-mechanical analysis is needed fur the customized structural design of multilayered structure. In this study, theoretical model for the thermo-mechanical analysis is developed for multilayered structures of the Al-$SiC_p$ functionally graded composite for electronic packaging. The evolution of curvature and internal stresses in response to temperature variations is presented for the different combinations of geometry. The resultant analytical solutions are used for the optimal design of the multilayered structures with functionally graded interface as well as with sharp interface.