• Transactions on Electrical and Electronic Materials
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• v.17 no.2
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• pp.118-120
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• 2016

A coplanar waveguide employing periodic 3D coupling structures (CWP3DCS) was developed for application in miniaturized on-chip passive components on silicon radio frequency integrated circuits (RFIC). The CWP3DCS showed the shortest wavelength of all silicon-based transmission line structures that have been reported to date. Using CWP3DCS, a highly miniaturized impedance transformer was fabricated on silicon substrate, and the resulting device showed good RF performance in a broad band from 4.6 GHz to 28.6 GHz. The device as was 0.04 mm² in size, which is only 0.74% of the size of the conventional transformer on silicon substrate.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.25-27
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• 2003

The device characteristics and the interface electronic structures of organic light-emitting devices based on /tris-(8-hydroxyquinoline)aluminum ($Alq_3$) were investigated with Al/NaF cathode. The Al/NaF cathode greatly improved the performance of the device over the Al-only cathode. A series of photoelectron spectroscopy studies on cathode structures including Al/LiF and $Al/CaF_2$ revealed that the performance enhancement originated mainly from the HOMO peak shift upon the fluoride deposition rather than the formation of the gap states

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.244-247
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• 2002

In order to evaluate the water ingress to URD power cables with the jacketing materials and the cable structures, water vapor transmission (WVT) tests were carried out by the ASTM and the TEPCO's specification. All polyolefin compounds showed the superior water suppression to conventional PVC. Especially, linear polyethylenes have very low WVT. In case of cable structures, Allaminate cables showed the significant water suppression due to the watertight structure. Accordingly, it can be concluded that jacketing material and cable structure play an important role in the water suppression of URD power cables.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.607-610
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• 2003

The characteristic prediction and analysis of 3-dimensional (3-D) solenoid-type embedded inductors is investigated. The four different structures of 3-D inductor are fabricated by using low-temperature cofired ceramic (LTCC) process. The circuit model parameters of the each building block are optimized and extracted using the partial element equivalent circuit method and HSPICE circuit simulator. Based on the model parameters, predictive modeling is applied for the structures composed of the combination of the modeled building blocks. And the characteristics of test structures, such as self-resonant frequency, inductance and Q-factor, are analyzed. This approach can provide the characteristic conception of 3-D solenoid embedded inductors for structural variations.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.489-492
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• 2003

In this paper, we experimented on the deterioration process of power supply cords and analyzed the heating temperature of each part of those cords. We also analyzed the surface states, metallurgical structures surface structures and compositions of the wire melted by over-current. In the results of the analyses, the covering began to be deteriorated from the inside. The heating temperature of extension cord was higher than that of plug body. The dendrite structures appeared at the melted wire. By the SEM and EDS analyses, the dendrite structure showed the growth of copper oxide. We found out the characteristics of PVC insulated flexible cords by over-current from the above experiments and analyses. These results may be useful data in the analyses of deterioration causes of power supply cords.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.658-662
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• 2001

This paper describes on the fabrication and characteristics of hot-film type micro-flowsensors integrated with Pt-RTD(resistance thermometer device) and micro-heater on the SOI(Si-on-insulator) membrane and trench structures, in which MGO thin-film was used as medium layer in order to improve adhesion of Pt thin-film to SiO$_2$ layer. Output voltages increased due to increase of heat-loss from sensor to external. The output voltage was 250 nV at N$_2$ flow rate of 2000 sccm/min, heating power of 0.3 W. The response time($\tau$:63%) was about 42 msec when input flow was step-input. The results indicated that micro-flowsensors with the SOI membrane and trench structures have properties of a high-resolution and ow consume power.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.11
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• pp.1023-1028
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• 2003

The field emission characteristics are studied by simulation for carbon nanotube triode structures with a strip-shaped emitter and a gate hole aligned with it. Two structures, one with double-edge and the other with single edge are analyzed. They show good emission characteristics. Emissions of electrons are concentrated on the edges of emitter and the emitted current increases as the distance between emitter and gate decreases. For single-edged emitter, the emitted electrons form a narow strip-shaped beam which has a good directionality. These triode structures have advantages in that they can be easily fabricated and aligned for assembly.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.59-62
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• 1998

Thermal treatment dependences of MFS devices in $BaMgF_4$ on Si structures have been investigated. $BaMgF_4$ thin films have been directly deposited on the p-Si(100) wafers at a low temperature of $300^{\circ}$ in an ultra high vacuum(UHV) system. After in-situ post-deposition annealing was conducted for 20 s at $650^{\circ}$, bias and temperature were applied to $BaMgF_4/Si$ structures. Although X-ray diffraction analysis showed that the films were polycrystalline in nature before and after bias temperature, the C-V properties were some different between with and without bias-temperature treatment.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.609-612
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• 1999

Organic electroluminescent(EL) devices have received a great deal of attention due to their potential application as full-color displays. They are attractive because of their capability of multicolor emission, ease of fabrication, and operation at a low driving voltage. In this study, single and multiple quantum-well structures consisting of Eu(TTA)$_3$(bpy) complex well layer sandwiched between triphenyldiamine derivative (TPD) layers were fabricated and their photoluminescent electroluminescent characteristics were also investigated. Sharp emission at 616 nm has been observed from the Eu complex in multilayer, single and multiple quantum-well structures. Details on the explanation of electrical properties of these structures will be discussed.

• Journal of the Optical Society of Korea
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• v.16 no.3
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• pp.292-298
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• 2012

The epitaxial layer structures for blue InGaN light emitting diodes have been optimized for high brightness applications with the output power levels exceeding 1000 $W/cm^2$ by using a self-consistent finite element method. The light-current-voltage relationship has been directly estimated from the multiband Hamiltonian for wurtzite crystals. To analyze the efficiency droop at high injection levels, the major nonradiative recombination processes and carrier spillover have also been taken into account. The wall-plug efficiency at high injection levels up to several thousand $A/cm^2$ has been successfully evaluated for various epilayer structures facilitating optimization of the epitaxial structures for desired output power levels.