• Korean Security Journal
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• no.9
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• pp.27-68
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• 2005

Recently, because credit card crime using a personal credit information is increasing, professionalizing, and spreading the area, the loss occurring from credit card crime is enormous and is difficult to arrest and punish the criminals. At past, crime from forging and counterfeiting the credit card was originated by minority criminals, but at present, the types and appearance of credit card crime is very different to contrasting past crime. The numbers of people using credit card in the middle of 1990's was increasing and barometer of living conditions was evaluated by the number having credit card, therefore this bad phenomenon occurring from credit card crime was affected by abnormal consumption patterns. There is no need emphasizing the importance of personal credit card in this credit society. so, because credit card crime using personal credit card information has a bad effect, and brings the economic loss and harms to individuals, credit card company, and members joining credit card. Credit card crime using personal credit card information means the conduct using another people's credit card information(card number, expiring duration, secret number) that detected by unlawful means. And crime using dishonest means from another people's credit information is called a crime profiting money-making and a crime lending an illegal advance by making false documents. A findings on countermeasures of this study are as follows: Firstly, Diverting user's mind, improving the art of printing, and legitimating password from payment gateway was suggested. Secondly, Complementing input of password, disseminating the system of key-board protection, and promoting legitimations of immediate notification duty was suggested. Thirdly, Certificating the electronic certificates as a personal certificates, assuring the recognition by sense organ of organism, and lessening the ratio of crime occurrence, and restricting the ratio of the credit card crime was suggested.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.8
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• pp.461-465
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• 2016

n-type silicon shows the better tolerance towards metal impurities with a higher minority carrier lifetime compared to p-type silicon substrate. Due to better lifetime stability as compared to p-type during illumination made the photovoltaic community to switch toward n-type wafers for high efficiency silicon solar cells. We fabricated the front electrode of the n-type solar cell with AgAl paste. The electrodes characteristics of the AgAl paste depend on the contact junction depth that is closely related to the firing temperature. Metal contact depth with p+ emitter, with optimized depth is important as it influence the resistance. In this study, we optimize the firing condition for the effective formation of the metal depth by varying the firing condition. The firing was carried out at temperatures below $670^{\circ}C$ with low contact depth and high contact resistance. It was noted that the contact resistance was reduced with the increase of firing temperature. The contact resistance of $5.99m{\Omega}cm^2$ was shown for the optimum firing temperature of $865^{\circ}C$. Over $900^{\circ}C$, contact junction is bonded to the Si through the emitter, resulting the contact resistance to shunt. we obtained photovoltaic parameter such as fill factor of 76.68%, short-circuit current of $40.2mA/cm^2$, open-circuit voltage of 620 mV and convert efficiency of 19.11%.

• Electrical & Electronic Materials
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• v.10 no.2
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• pp.141-149
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• 1997

L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ powders were prepared by both GNP(Glycine-Nitrate Process) and solid state reaction method in various of calcination temperature(800-1000.deg. C) and time in air. Also, L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ cathode contacts on YSZ(Yttria-Stabilized Zirconia) substrate were prepared by screen printing and sintering method as a function of sintering temperature(1100-1450.deg. C) in air. Sintering behaviors have been investigated by SEM(Scanning Electron Microscope) and porosity measurement. Compositional and structural characterization were carried out by X-ray diffractometer and ICP AES(Inductively Coupled Plasma-Atomic Emission Spectrometry) analysis. Electrical characterization was carried out by the electrical conductivity with linear 4 point probe method. As the calcination period increased in solid state reaction method, L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ phase increased. Although L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ single phase was obtained only for 48hrs at 1000.deg. C, in GNP method it was easy to get single and ultra-fine L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ powders with submicron particle size at 650.deg. C for 30min. The particle size and thickness of L $a_{0.7}$S $r_{0.3}$Mn $O_{3}$ cathode contact by solid state reaction method did not change during the heat treatment, while those by GNP method showed good sintering characteristics because initial powder size fabricated from GNP method is smaller than that fabricated from solid state reaction method. Based on enthalpy change from thermodynamic data and ICP-AES analysis, it was suggested to make cathode contact in composition of (L $a_{0.7}$S $r_{0.3}$)$_{0.91}$ Mn $O_{3}$ which have little second phase (L $a_{2}$Z $r_{2}$ $O_{7}$) for high efficient solid oxide fuel cells applications. As (L $a_{0.7}$S $r_{0.3}$)$_{0.91}$Mn $O_{3}$ cathode contact on YSZ substrate was sintering at 1250.deg. C the temperature that liquid phase sintering did not occur. It was possible to obtain proper cathode contacts with electrical conductivity of 150(S/cm) and porosity content of 30-40%.m) and porosity content of 30-40%.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.346-346
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• 2007

압전세라믹 재료는 현재 압전 변압기, actuator, transducer, sensor, speaker 등에 광범위하게 이용이 되고 있다. 이 중에서 압전세라믹 소결체를 이용한 스피커의 제조는 가공이 까다롭고, 대형의 크기로 제작 시 소자가 깨지는 등의 많은 제약을 받고 있으며, 저음 특성이 떨어져 응용 범위가 한정되어 있다. 따라서 최근에는 이러한 단점을 극복하기 위하여 세라믹/고분자 복합체를 이용한 필름 스피커를 제작하고자 시도하고 있다. 이러한 세라믹/고분자 0-3형 압전 복합체를 이용할 경우, 제품의 경량화를 실현할 수 있고, 크기나 환경의 영향을 거의 받지 않으므로, 고기능성 스피커로의 응용에 적합할 것으로 보인다. 따라서 본 연구에서는 PZT계의 세라믹와 PVDF, PVDF-TrFE, Polyester, acrylic resin 등의 여러 고분자 물질과의 복합체를 제조하여 압전특성을 평가하였다. 본 실험은 먼저 $(Pb_{1-a-b}Ba_aCd_b)(Zr_xTi_{1-x})_{1-c-d}(Ni_{1/3}Nb_{2/3})_c(Zn_{1/3}Nb_{2/3})_dO_3$ (이하 PZT라 표기)의 최적화 조성을 선택하여, $1050^{\circ}C$에서 소결된 분말을 48시간 ball milling방법 로 약 $1{\mu}m$ 크기로 분쇄하였다. 고분자 물질들은 알맞은 용제들을 선택하여 녹였다. 그 다음 소결된 PZT분말과 고분자를 50:50, 60:40, 65:35, 70:30등의 무게 분율로 혼합하고, 분산제, 소포제 등을 첨가하여 3단 roll mill을 이용하여 충분히 분산시켜 페이스트 (Paste)를 제조하였다. 제조된 페이스트를 ITO가 코팅된 PET필름 위에 스크린 프린팅 법을 사용하여 인쇄하여 $120^{\circ}C$에서 5분간 건조하였다. 코팅된 복합체의 두께는 약 $80{\mu}m$ 정도로 측정되었다. Ag 페이스트를 이용한 상부 전극 형성에도 스크린 프린팅 법을 적용하였다. 이를 $120^{\circ}C$에서 4 kV/mm의 DC 전계로 분극 공정을 수행한 후 전기적 특성을 평가하였다. 유전특성을 조사하기 위해서 LCR meter (EDC-1620)를 사용하였고, 시편의 결정구조는 XRD (Rigaku; D/MAX-2500H)을 통해 분석하였으며, 전자현미경(SEM)을 이용하여 미세구조를 분석하였다. 압전 전하상수$(d_{33})$ 값은 APC 8000 모델을 이용하여 측정하였다. PZT의 혼합비가 증가할수록 비유전율 및 압전 전하 상수 등의 전기적 특성이 증가되었다. 또 여러 고분자 물질 중에서 PVDF-TrFE 수지가 가장 우수한 특성을 보였다. 이는 PVDF-TrFE 수지가 압전성을 나타내기 때문인 것으로 판단되었다.

• Journal of the Korean Society for Library and Information Science
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• v.46 no.2
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• pp.29-54
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• 2012

This study aims to grasp what factors affect users' recognition level and expectation level for library service, being offered at the library of Korea National Open University. Also, this study seeks to conduct a survey and analyze whether users' recognition level by library service dimensions has actually influenced the intention and the satisfaction with using the library. For this, it carried out the theoretical approach, which considers domestic and foreign documents on evaluation of quality of library service, and the empirical approach of questionnaire research and analysis. A research model was designed on the basis of LibQUAL+model to achieve the objective of this research. And the group-based difference was confirmed by carrying out verification on research hypothesis. As a result of analysis, the users' current recognition level by library service dimensions of Korea National Open University was indicated to have influence on the whole satisfaction with library and the continuous use intention. The whole satisfaction was indicated to have an effect on continuous use intention. Also, to enhance users' satisfaction level according to the behavioral characteristics of using library, the core elements for improving the library service of Korea National Open University were cited and these include improving the facility of library, implementing smart digital library system for offering remotely academic information, and securing diversity and currency of academic information sources such as printing materials and electronic materials.

• Archives of design research
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• v.20
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• pp.111-120
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• 1997

Recently, rapidly increasing internet Websites are providing us with the new kinds of multimedia informations without borders acting as the center for exchanging informations. Such new media informations through the internet passes informations via light on the monitor and provides the various informations, with the differentiation from the traditional printing media, it can be searched with electronic commands in limited space. In the process of adapting the new technologies, new media has successfully responded to the fast change and the development of its needs by experiencing the trials and errors, steadily establishing the stable position with its new information transferring and exchanging methods. The representative hompage of websites of information transformations means the first page containing no lower directories and consist of titles, icons, symbols and addresses and can design them in consideration of graphical process, planning, contents and others. Such hompages are very important since the graphical images shows its visual expressions deciding the total meanings of the hompages. In this research, we have analyzed the visual factors of frequencies, ratio of areas, distributions, alignment methodologies on layouts of hompages consisting titles, icons, contents and symbols, etc. from randomly picked samples of 161 hompages of websites in the internets of various areas. Generally, the homepages are designed with graphical expressions in personal way and the feedbacks and responses of such may differs, but we think, this can be used as reference materials for the analysis of new media in objective way. Also, it can be used as the base informations for arrangement and planning of designs with the characteristics of graphics and Graphic User Interfaces in the background which are implemented over internet.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.344-344
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• 2014

Transparent amorphous oxide semiconductors such as a In-Ga-Zn-O (a-IGZO) have advantages for large area electronic devices; e.g., uniform deposition at a large area, optical transparency, a smooth surface, and large electron mobility >10 cm2/Vs, which is more than an order of magnitude larger than that of hydrogen amorphous silicon (a-Si;H).1) Thin film transistors (TFTs) that employ amorphous oxide semiconductors such as ZnO, In-Ga-Zn-O, or Hf-In-Zn-O (HIZO) are currently subject of intensive study owing to their high potential for application in flat panel displays. The device fabrication process involves a series of thin film deposition and photolithographic patterning steps. In order to minimize contamination, the substrates usually undergo a cleaning procedure using deionized water, before and after the growth of thin films by sputtering methods. The devices structure were fabricated top-contact gate TFTs using the a-IGZO films on the plastic substrates. The channel width and length were 80 and 20 um, respectively. The source and drain electrode regions were defined by photolithography and wet etching process. The electrodes consisting of Ti(15 nm)/Al(120 nm)/Ti(15nm) trilayers were deposited by direct current sputtering. The 30 nm thickness active IGZO layer deposited by rf magnetron sputtering at room temperature. The deposition condition is as follows: a rf power 200 W, a pressure of 5 mtorr, 10% of oxygen [O2/(O2+Ar)=0.1], and room temperature. A 9-nm-thick Al2O3 layer was formed as a first, third gate insulator by ALD deposition. A 290-nm-thick SS6908 organic dielectrics formed as second gate insulator by spin-coating. The schematic structure of the IGZO TFT is top gate contact geometry device structure for typical TFTs fabricated in this study. Drain current (IDS) versus drain-source voltage (VDS) output characteristics curve of a IGZO TFTs fabricated using the 3-layer gate insulator on a plastic substrate and log(IDS)-gate voltage (VG) characteristics for typical IGZO TFTs. The TFTs device has a channel width (W) of $80{\mu}m$ and a channel length (L) of $20{\mu}m$. The IDS-VDS curves showed well-defined transistor characteristics with saturation effects at VG>-10 V and VDS>-20 V for the inkjet printing IGZO device. The carrier charge mobility was determined to be 15.18 cm^2 V-1s-1 with FET threshold voltage of -3 V and on/off current ratio 10^9.

• Archives of design research
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• v.11 no.1
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• pp.143-152
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• 1998

Recently, rapidly increa~ing internet Websites are providing us with the new kinds of multimedia infonnations without borders acting as the center for exchanging informations. Such new media infonnations through the internet passes infonnations via light on the monitor and provides the various infonnations, with the differentiation from the traditional printing media, it can be searched with electronic commands in limited space. In the process of adapting the new technologies, new media has successfully responded to the fast change and the development of its needs by experiencing the trials and errors, steadily establishing the stable position with its new infonnation transferring and exchanging methods. The representative hompage of websites of information lransfonnations means the first page containing no lower directories and consist of titles, icons, symbols and addresses and can design them in consideration of graphical process, planning, contents and others. Such hompages are very important since the graphical images shows its visual expressions deciding the total meanings of the hompages. In this research, we have analyzed the relationships between its overall colors and text colors from randomly picked hompages of websites in the internets of various areas. Generally, the homepages are designed with graphical expressions in personal way and the feedbacks and responses of such may differs, but this can be used as reference materials for the analysis of new media in objective way. Also, it can be used as the base informations for arrangement and planning of designs with the characteristics of graphics and Graphical User Intertilces in the backhlfound which are implemented over internet.

• Tribology and Lubricants
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• v.32 no.3
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• pp.75-81
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• 2016

Future electronics such as electronic paper and foldable cellphone are required to be flexible and transparent and should have a high performance. In order to fabricate the flexible electronics using flexibility transfer process, techniques for transferring various devices from rigid substrate onto flexible substrate by elastomeric stamp, have been developed. Adhesion between the elastomeric stamp and various devices is crucial for successful transfer process. The adhesion can be controlled by the thickness of the stamp, separation velocity, contact load, and stamp surface treatment. In this study, we fabricated the bump shape stamp consisting of a UV-curable polymer and investigated the effects of curing condition, separation velocity, and contact load on the adhesion characteristics of bumps. The bumps with hemispherical shape were fabricated using a dispensing process, which is one of the ink-jet printing techniques. Curing conditions of the bumps were controlled by the amount of UV irradiation energy. The adhesion characteristics of bumps are evaluated by adhesion test. The results show that the pull-off forces of bumps were increased and decreased as UV irradiation energy increased. For UV irradiation energies of 300 and 500 mJ/cm², the pull-off forces were increased as the separation velocity increased. The pull-off forces also increased with the increase of contact load. In the case of UV irradiation energy above 600 mJ/cm², however, the pull-off forces were not changed. Therefore, we believe that the bump shape stamp can be applied to roll-based transfer process and selective transfer process as an elastomeric stamp.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.375-375
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• 2010

CdTe as an absorber material is widely used in thin film solar cells with the heterostructure due to its almost ideal band gap energy of 1.45 eV, high photovoltaic conversion efficiency, low cost and stable performance. The deposition methods and preparation conditions for the fabrication of CdTe are very important for the achievement of high solar cell conversion efficiency. There are some rearranged reports about the deposition methods available for the preparation of CdTe thin films such as close spaced sublimation (CSS), physical vapor deposition (PVD), vacuum evaporation, vapor transport deposition (VTD), closed space vapor transport, electrodeposition, screen printing, spray pyrolysis, metalorganic chemical vapor deposition (MOCVD), and RF sputtering. The RF sputtering method for the preparation of CdTe thin films has important advantages in that the thin films can be prepared at low growth temperatures with large-area deposition suitable for mass-production. The authors reported that the optical and electrical properties of CdTe thin film were closely connected by the thickness-uniformity of the film in the previous study [1], which means that the better optical absorbance and the higher carrier concentration could be obtained in the better condition of thickness-uniformity for CdTe thin film. The thickness-uniformity could be controlled and improved by the some process parameters such as vacuum level and RF power in the sputtering process of CdTe thin films. However, there is a limitation to improve the thickness-uniformity only in the preparation process [1]. So it is necessary to introduce the external or additional method for improving the thickness-uniformity of CdTe thin film because the cell size of thin film solar cell will be enlarged. Therefore, the authors firstly applied the chemical mechanical polishing (CMP) process to improving the thickness-uniformity of CdTe thin films with a G&P POLI-450 CMP polisher [2]. CMP process is the most important process in semiconductor manufacturing processes in order to planarize the surface of the wafer even over 300 mm and to form the copper interconnects with damascene process. Some important CMP characteristics for CdTe were obtained including removal rate (RR), WIWNU%, RMS roughness, and peak-to-valley roughness [2]. With these important results, the CMP process for CdTe thin films was performed to improve the thickness-uniformity of the sputtering-deposited CdTe thin film which had the worst two thickness-uniformities of them. Some optical properties including optical transmittance and absorbance of the CdTe thin films were measured by using a UV-Visible spectrophotometer (Varian Techtron, Cary500scan) in the range of 400 - 800 nm. After CMP process, the thickness-uniformities became better than that of the best condition in the previous sputtering process of CdTe thin films. Consequently, the optical properties were directly affected by the thickness-uniformity of CdTe thin film. The absorbance of CdTe thin films was improved although the thickness of CdTe thin film was not changed.