• 제어로봇시스템학회:학술대회논문집
• /
• 2003.10a
• /
• pp.2287-2290
• /
• 2003

The electrical characteristics of power devices such as BJT (Bipolar Junction Transistor), and MOSFET (Metal Oxide Field Effect Transistor), etc, are altered due to impinging photon radiation and temperature in the nuclear or the space environment. In this paper, BJT and MOSFET are the two devices subjected to ${\gamma}$ radiation. In the case of BJT, the current gain (${\beta}$) and the collector to Emiter breakdown voltage ($V_{CEO}$) are the two main parameters considered. When it was subjected to ${\gamma}$ rays, the ${\beta}$ decreases as the dose level increases, whereas, $V_{CEO}$ gradually increases as the dose level increases. In the case of MOSFET, the threshold voltage is decreasing as the dose level increases. Here it has been observed the decent rate is an increasing function of the threshold voltage. The on-resistance does not change with respect to the dose. Both the devices recover back the original specification after the annealing is finished. No permanent damage has been occurred.

• Journal of Powder Materials
• /
• v.25 no.3
• /
• pp.263-272
• /
• 2018

Recent developments in the field of energy harvesting technology that convert ambient energy resources into electricity enable the use of self-powered energy systems in wearable and portable electronic devices without the need for additional external power sources. In particular, piezoelectric-effect-based flexible energy harvesters have drawn much attention because they can guarantee power generation from ubiquitous mechanical and vibrational movements. In response to demand for sustainable, permanent, and remote use of real-life personal electronics, many research groups have investigated flexible piezoelectric energy harvesters (f-PEHs) that employ nanoscaled piezoelectric materials such as nanowires, nanoparticles, nanofibers, and nanotubes. In those attempts, they have proven the feasibility of energy harvesting from tiny periodic mechanical deformations and energy utilization of f-PEH in commercial electronic devices. This review paper provides a brief overview of f-PEH devices based on piezoelectric nanomaterials and summarizes the development history, output performance, and applications.

• Transactions on Electrical and Electronic Materials
• /
• v.12 no.2
• /
• pp.84-87
• /
• 2011

We fabricated phosphorescent organic light-emitting devices with a 1,1-bis[(di-4-tolylamino)phenyl]cyclohexane (TAPC) host layer. Two kinds of devices, one of ITO/TAPC/TAPC:FIrpic/TAZ/LiF/Al (device A) and one of ITO/TAPC:FIrpic/TAPC/TAZ/LiF/Al (device B), were prepared to investigate electrical and optical properties. Iridium(III) bis[(4,6-difluorophenyl)-pyridinato-N,$C^{2'}$]picolinate (FIrpic) and 3-(4-biphenylyl)-4-phenyl-5-(4-tert-butylphenyl)-1,2,4-triazole (TAZ) were used as a blue phosphorescent guest material and an electron transport layer, respectively. The TAPC layer in device B strongly contributes to whitish emission, higher driving voltage, and lower current efficiency characteristics compared with device A. The mechanisms of these electrical and optical characteristics of the devices were investigated.

• Transactions on Electrical and Electronic Materials
• /
• v.17 no.5
• /
• pp.306-309
• /
• 2016

The Cs₃Sb photocathode was formed by non-vacuum process technology. An in-situ vacuum device was fabricated successively with flat cesium antimonide photocathode emitters fabricated in a process chamber. The electrical properties of the device were characterized. Electron emission from the devices was induced by photoemitted electrons, which were accelerated by an anode electric field that was shielded from the photoemitter surface. The electrical characteristics of the devices were investigated by measuring the anode current as a function of device operation times with respect to applied anode voltages. Planar blue LED light with a 450 nm wavelength was used as an excitation source. The results showed that the cesium antimonide photocathode emitter has the potential of long lifetime with stable electron emission characteristics in panel devices. These features demonstrate that the cesium antimony photocathodes produced by non-vacuum processing technology is suitable for flat cathodes in panel device applications.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2007.08b
• /
• pp.1333-1335
• /
• 2007

We studied the surface defects and the current distributions of ITO thin films by reflected electron energy loss spectroscopy (REELS) and conductiveatomic force microscope (c-AFM). The ohmic behavior of ITO thin film was observed at $230\;^{\circ}C$ annealed sample. The defects related to the electronic structure decreased after anneal process.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.19 no.2
• /
• pp.158-161
• /
• 2006

The purpose of this research is to establish the crosstalk characteristic of mm-wave Coplanar structure. The components in mm-wave CPW are classified to transmission devices, EM devices, and quasi - TEM devices. After design of these devices, we analyzed these CPW s electromagnetically using FDTD method, and suggested the corsstalk characteristic of mm-wave CPW. In oder to realize a CPW module up to 30 GHz-100 GHz band, we research on a technology of 3-dimensional mm-wave CPW, and GaAs substrate with ohmic lossy layer. As a result this research, we suggested the optimum crosstalk characteristic of mm-wave CPW, and improved the crosstalk quality of mm-wave CPW.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2001.07a
• /
• pp.660-663
• /
• 2001

The devices of BST thin films to composite (Ba$\_$0.7/ Sr$\_$0.3/)TiO$_3$using sol-gel method were fabricated by changing of the depositing layer number on Pt/Ti/SiO$_2$/Si substrate. The thin film capacitor to be ferroelectric devices was investigated by structural and electrical properties. The thickness of BST thin films at each coating numbers 3, 4 and 5 times was 2500[${\AA}$], 3500[${\AA}$], 3800[${\AA}$]. The dielectric factor of thin film when the coating numbers were 3, 4 and 5 times was 190, 400 and 460 on frequency 1[MHz]. The dielectric loss of BST thin film was linearly increased by increasing of the specimen area.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1998.11a
• /
• pp.13-16
• /
• 1998

An anomalous current characteristics which show the superposition of a low current level and high current level at the subthreshold region when SONOSFETs are in memory states were investigated. We have assumed this phenomena were resulted from the effect of parasitic transistors by LOCOS isolation and were modeled to a parallel equivalent circuit of one memory transistor and two parasitic transistors. Theoretical curves are well fitted in measured log I$_{D}$-V$_{G}$ curves independent of channel width of memory devices. The difference between low current level and high current level is apparently decreased with decrease of channel width of devices because parasitic devices dominantly contribute to the current conduction with decrease of channel width of memory devices. As a result, we concluded that the LOCOS isolation has to selectively adopt in the design of process for charge-trap type NVSM.VSM.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.04a
• /
• pp.249-252
• /
• 1997

Electroluminescence(EL) devices based on organic thin layers have attracted lot of interests because of their possible application as large-area display-emitting display. One of the problems of such devices is lifetime of the cell, where the degradation of the cell is partially due to the crystalliyzation of organic layers. In large part, this problem can be solved by using a multilayer device structure prepared by vapor deposition technique. In this study, blue light-emitting multilayer organic electroluminescence devices were fabricated vsing Poly (9-vinylcarbaEole) (PVK) and 2- (4-tert-butylphenyl)-5-(4$^{#}$-bis-phenyl) 1,3,4-oxadiazole (PBO) as hole trasport and electron transport material, respectively, where trim(8-hyd roxyquinolinate) aluminum (Al $q_3$) was used as a luminescenct material. A cell structure of glass sub- strate/indume-tin-oxide(ITO)/PCK/Al $q_3$/PBD/Mg:In was employed. Blue emission peak at 510nm was observed with this cell structure.e.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.18 no.12
• /
• pp.1129-1132
• /
• 2005

The purpose of this reserch is to establish the new design technology for microwave Coplanar structure. The components in microwave circuit are classified to transmission devices, EM devices, and quasi-TEM devices. After design of these devices, we analyzed these CPWs electromagnetically using FDTD method, and suggested optimum CPW structure. In oder to realize a CPW module up to 30 GHz-100 GHz band, we research on a technology of 3-dimensional microwave CPW, and GaAs substrate with Si layer for ohmic loss. As a result this research, we suppressed the leakage, resonance, coupling, and radiation of CPW EMI, and improved resonance quality of CPW.