• 대한전자공학회:학술대회논문집
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• 대한전자공학회 2003년도 하계종합학술대회 논문집 II
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• pp.711-714
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• 2003

In this presentation, we investigated the abnormal subthreshold slope of the FD SOI MOSFETs upon the rapid thermal annealing. Based on subthreshold technique and C-V measurement, we deduced that the hump of the subthreshold slope comes from the abnormal D$_{it}$ distribution after RTA. The local kink in the interface trap density distribution by RTA drastically degrades the subthreshold characteristics and mini hump can be eliminated by S-PGA.A.

• 기본간호학회지
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• 제9권1호
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• pp.101-112
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• 2002

Purpose: This study evaluated the accuracy of electronic devices compared with mercury sphygmomanometer. Of 132 outpatients with electronic devices. 77 who possessed oscillometric cuff devices participated in this study. Method: When the blood pressure was measured, all electronic devices were connected by means of a Y-connector to a mercury sphygmomanometer. Using the simultaneous same arm approach, each comparison was carried out three times at 2-minute intervals. Results: Compared with the mercury sphygmomanometer, the electronic devices underestimated systolic and diastolic blood pressure, respectively by $4.0{\pm}5.8mmHg$ and $2.5{\pm}67mmHg$, which satisfies the standard error range of the American Association for the Advancement of Medical Instrumentation. According to the British Hypertension Society criteria, these differences achieved C grade for both systolic and diastolic pressure. For the graphical analysis, the differences had a tendency to fulfill the permitted error limits in both diastolic and systolic blood pressure. Moreover, the purchase duration was not correlated with the accuracy of electronic devices. Conclusion: These results indicate that difference in blood pressure between electronic devices and mercury sphygmomanometer is within the standard error. Therefore, electronic blood pressure measuring devices may be useful for therapeutic self-management of hypertension.

• Journal of Magnetics
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• 제22권1호
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• pp.49-54
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• 2017

The significant reduction of the image quality caused by the magnetic field of samples is a major problem affecting the application of SEM (scanning electron microscopy) in the analysis of electronic devices. The main reason for this is that the electron trajectory is deflected by the Lorentz force. The usual solution to this problem is degaussing the sample at high temperatures. However, due to the poor heat resistance of some electronic components, it is imperative to find a method that can reduce the impact of magnetic field on the image quality and is straightforward and easy to operate without destroying the sample. In this paper, the influence of different magnetic field directions on the imaging quality was discussed by combining the experiment and software simulation. The principle of the method was studied, and the best observation direction was obtained.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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• pp.1608-1611
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• 2009

Here the hydrogen passivation treatment has been adopted to enhance the performance of poly-Si crystallized by YAG laser annealing (LA poly-Si). We have investigated the effects of passivation time, passivation power and passivation temperature on the hall mobility of the LA poly-Si and analyzed the mechanism of the hydrogen passivation preliminary. It has been found that the quality of the poly-Si annealed by YAG laser could be improved after proper hydrogen plasma treatment.

• JSTS:Journal of Semiconductor Technology and Science
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• 제11권4호
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• pp.329-335
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• 2011

In this paper, a dual-band integer-N frequency divider is proposed for 2.4/5.2 GHz multi-standard wireless local area networks. It consists of a multi-modulus imbalance phase switching prescaler and two all-stage programmable counters. It is able to provide dual-band operation with high resolution while maintaining a low power consumption. This frequency divider is integrated with a 5 GHz VCO for multi-standard applications. Measurement results show that the VCO with frequency divider can work at 5.2 GHz with a total power consumption of 22 mW.

• 한국항행학회논문지
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• 제22권4호
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• pp.288-294
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• 2018

항공기의 엔터테인먼트 시스템은 고정된 모니터를 사용하는 대신에 승객 개인의 휴대용 전자기기를 사용하는 형태로 그 패러다임이 바뀌었다. 이로 인해 기내 설비는 간소해진 반면 휴대용 전자기기들의 전기 충전으로 안전에 대한 리스크는 증가되었다. 송신 기능이 없는 개인 휴대전자기기와 달리 와이파이 기능이 있는 전자기기(T-PED)의 사용이 허용되고 기내에서 배터리의 충전도 요구된다. 본 연구에서는 기내 무선 환경과 엔터테인먼트 서비스의 변화에 따른 영향을 조사하기 위해 NASA 항공안전보고시스템을 이용하여 기내 전자기기 사용 관련 자료를 분석하였다. 이를 기초로 하여, 항공기 안전관리 관점에서 비행 중에 발생된 객실 전자장비나 승객 휴대용 전자기기(특히 스마트폰)로 인한 이벤트 발생 사례를 공유하여 개인용 전자기기의 위험성을 분석하였다. 이러한 분석을 위해 잠재적 위해요인의 식별과 리스크 평가 작업이 수행되었으며, 최종적으로 휴대용 전자기기의 안전한 사용을 위한 리스크 완화 전략이 제시되었다.

• 대한화학회지
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• 제57권4호
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• pp.489-492
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• 2013

N-doped $TiO_2$ microcuboids were successfully prepared by a simple one-pot hydrothermal method. The samples were characterized by X-ray diffraction, scanning electron microscopy, diffuse reflectance spectroscopy, and X-ray photoelectron spectroscopy. It was found that the N-doped $TiO_2$ microcuboids enhanced absorption in the visible light region, and exhibited higher activity for photocatalytic degradation of model dyes. Based on the experimental results, a visible light induced photocatalytic mechanism was proposed for N-doped anatase $TiO_2$ microcuboids.

• 보건의료산업학회지
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• 제10권3호
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• pp.223-234
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• 2016

Objectives : The purpose of this study was to investigate accident cases involving electronic assistive devices, to determine how these accidents can be avoided and to devise preventative instructions for the handicapped who use these devices. Methods : This study was carried out from July 20 to October 3, 2015. A consent-based survey was conducted via mail and mobile phones targeting 700 electronic assistive device users, of which questionnaires from 290 users were collected and used in the analysis. Results : Accidents involving electronic assistive devices were investigated, especially the causes of the accidents and accident prevention education, as well as the status of the electronic assistive devices. The most common accident types were collision and falling, and it was found that the victims of the accidents usually suffered severe injury to their lower limbs. Most users used electronic assistive devices every day but rarely wore a safety belt because of discomfort. There were more incidents of collision and falling for older aged handicapped users, and the injury rate to the lower limbs was highest in handicapped elderly aged 50 years or older. Conclusions : In order to prevent accidents with electronic assistive devices in the future, a or management organizations must prepare specific safety guidelines and manage these accidents.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.985-988
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• 2008

Metal induced crystallization of a-Si with a source of Ni/Si oxide was studied. Its mechanism to induce crystallization was discussed. It was found that new source behaves an effect of self-released nickel and reducing nickel residua, so can provide a wider process tolerance; improve the uniformity and stability of TFTs.

• Transactions on Electrical and Electronic Materials
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• 제6권4호
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• pp.154-158
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• 2005

Organic molecules have many properties that make them attractive for electronic applications. We have been examining the progress of memory cell by using molecular-scale switch to give an example of the application using both nano scale components and Si-technology. In this study, molecular electronic devices were fabricated with amino style derivatives as redox-active component. This molecule is amphiphilic to allow monolayer formation by the Langmuir-Blodgett (LB) method and then this LB monolayer is inserted between two metal electrodes. According to the current-voltage (I-V) characteristics, it was found that the devices show remarkable hysteresis behavior and can be used as memory devices at ambient conditions, when aluminum oxide layer was existed on bottom electrode. The diode-like characteristics were measured only, when Pt layer was existed as bottom electrode. It was also found that this metal layer interacts with organic molecules and acts as a protecting layer, when thin Ti layer was inserted between the organic molecular layer and Al top electrode. These electrical properties of the devices may be applicable to active components for the memory and/or logic gates in the future.