• 한국전기전자재료학회논문지
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• 제31권5호
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• pp.351-356
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• 2018

Commonly, a live-line alarm can be used to measure the electric field strength of a high-voltage system to calculate its current, but it is hard to detect the electric field of shielded cables or concealed structures, such as underground distribution cables. Current sensors can detect the magnetic field in a single core wire, but they cannot determine the magnetic field about a double-core wire because the currents flow in opposite directions. Therefore, it is very difficult to detect certain current problems, such as a fault current in an extension line comprised of a double line. In this paper, to ultimately develop a sensor that can detect the current regardless of line conditions, we used a simulation to determine the concentration of the magnetic field dependent on the distribution of the external magnetic field and the path of each line's core.

• 한국전기전자재료학회논문지
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• 제20권9호
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• pp.812-815
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• 2007

To apply the superconducting fault current limiter(SFCL) into a power system, the analysis for its recovery characteristics as well as the consideration for its cooperation with other protecting machine such as a circuit breaker is required. The recovery characteristics of the flux-lock type SFCL like its current limiting characteristics are dependent on the winding direction of two coils. In this paper, the experiments of the current limiting and the recovery characteristics of the flux-lock type SFCL with YBCO thin film were performed. From the analysis on the experimental results due to the winding direction of two coils, the limited fault current in case of the additive polarity winding was observed to be lower than that for the case of the subtractive polarity winding. In addition, the recovery time was found to be faster in case of the additive polarity winding compared to the subtractive polarity winding.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2001년도 하계학술대회 논문집
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• pp.840-843
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• 2001

In this study, temperature dependency of current gain for AlGaAs/GaAs/GaAs HBT is analytically proposed over the temperature range between 300K and 600K. Energy bandgap, effective mass, intrinsic carrier concentration are considered as temperature dependent parameters. Collector current which is numerically calculated is then analytically expressed to enhance the speed of calculation for current gain. From the results, current gain decreases as the temperature increases. These results will be used to expect the unity current gain frequency f$_{T}$ in conjunction with emitter-base and collector- base capacitances.s.

• Transactions on Electrical and Electronic Materials
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• 제17권2호
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• pp.113-117
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• 2016

Temperature dependent reverse-bias current-voltage (I-V) characteristics in Cu Schottky contacts to oxygen plasma treated n-InP were investigated. For untreated sample, current transport mechanisms at low and high temperatures were explained by thermionic emission (TE) and TE combined with barrier lowering, respectively. For plasma treated sample, experimental I-V data were explained by TE or TE combined with barrier lowering models at low and high temperatures. However, the current transport was explained by a thermionic field emission (TFE) model at intermediate temperatures. From X-ray photoemission spectroscopy (XPS) measurements, phosphorus vacancies (VP) were suggested to be generated after oxygen plasma treatment. V_P possibly involves defects contributing to the current transport at intermediate temperatures. Therefore, minimizing the generation of these defects after oxygen plasma treatment is required to reduce the reverse-bias leakage current.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.511-514
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• 2002

In this paper, we compared the characteristic of fault current liminting in the magnetic shielding type High-Tc superconducting fault current limiter(FCL) using both Piecewise linear magnetization curve and real magnetization one of iron core. From this paper, the characteristics of fault current limiting in both cases showed many differences. The latter has higher fault current than the former, because the saturation of iron core was reflected and more accumulated during fault. It is expected that the more exact characteristic of magnetic shielding type High-Tc superconducting FCL was obtained in the case of design and modeling.

• 한국전기전자재료학회논문지
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• 제17권8호
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• pp.799-805
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• 2004

Two dimensional MEDICI simulator is used to study the characteristics of latch-up current of Dual Gate Emitter Switched Thyristor. The simulation is done in terms of the current-voltage characteristics, latch-up current density, ON-voltage drop and electrical property with the variations of p-base impurity concentrations. Compared with the other power devices such as MOS Controlled Cascade Thyristor(MCCT), Conventional Emitter Switched Thyristor(C-EST) and Dual Channel Emitter Switched Thyristor(DC-EST), Dual Gate Emitter Switched Thyristor(DG-EST) shows to have the better electrical characteristics, which is the high latch-up current density and low forward voltage-drop. The proposed DG-EST which has a non-planer p-base structure under the floating $N^+$ emitter indicates to have the better characteristics of latch-up current and breakover voltage.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.371-371
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• 2010

In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the MEMS implementation with nano structure. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $41{\AA}$, which have the gate area $10^{-3}cm^2$. The stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

• 제어로봇시스템학회논문지
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• 제6권3호
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• pp.284-290
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• 2000

The measurement of electric current using optical techniques provides a number of important practical advantages including effective isolation from high line potentials and freedom from the saturation effects observed in conventional current transformers. In this work the optical current sensor which uses thin YIG(Yittrium Ion Garnet) film as a Faraday element has been developed. We have characterized this optical current sensor and implemented it to the OOCR(Opto-electronic OverCurrent Realy) Performance of the OOCR shows the possibility of replacing the present overcurrent relays with OOCR.

• 반도체디스플레이기술학회지
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• 제5권1호
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• pp.21-25
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• 2006

To improve the performance of organic thin film transistor, we investigated the properties of gate insulator's surface according to the leakage current by I-V measurement. The surface was treated by the dilute n-octadecyltrichlorosilane solution. The alkyl group of n-octadecyltrichlorosilane induced the electron tunneling and the electron tunneling current caused the breakdown at high electric field, consequently shifting the breakdown voltage. The 0.5% sample with an electron-rich group was found to have a large leakage current and a low barrier height because of the effect of an energy barrier lowered by, thermionic current, which is called the Schottky contact. The surface properties of the insulator were analyzed by I-V measurement using the effect of Poole-Frankel emission.

• 한국전기전자재료학회논문지
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• 제29권5호
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• pp.289-293
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• 2016

The flux-lock type superconducting fault current limiter (SFCL) connects the two parallel windings in parallel with a ferromagnetic core. We suggest that the double quench flux-lock type SFCL should add a third winding. We analyzed characteristics of the fault current and the peak current using the quench of the high-Tc superconducting element. The proposed SFCL's inductances of a primary winding and the third winding were fixed and the amplitude of inductance of the secondary winding was changed. We found that the fault current can be more effectively controlled through the analysis of the equivalent circuit and the short-circuit tests.