• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.10
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• pp.918-923
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• 1998

Poly-silicon thin film transistors were fabricated on quartz substrates by high temperature processes. Electrical characteristics were measured and compared for 3 transistor structures of Standard Inverted Gate(SIG), Lightly Doped Drain(LDD), and Dual Gate(DG). Leakage currents of DG and LDD TFT's were smaller that od SIG transistor, while ON-current of LDD transistor is much smaller than that of SIG and DG transistors. Temperature dependence of the leakage currents showed that SIG and DG TFT's had thermal generation current at small drian bias and Frenkel-Poole emission current at hight gate and drain biases, respectively. In case of LDD transistor, thermal generation was the dominant mechanism of leakage current at all bias conditions. It was found that the leakage current was closely related to the reduction of the electric field in the drain depletion region.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.73-76
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• 1999

We have fabricated and tested a Bi-based high temperature superconducting current lead system. Ag sheathed Bi-2223 mono-filament tapes of $I_c=8.4$ A at 77 K under self-field condition were fabricated using powder-in-tube(P1T) method. Multi-layer current leads can be made by stacking of Ag sheathed Bi-2223 mono-filament wires. The critical current of this 10-layer current lead is about 68 A. The contact resistance across the copper-current lead interface has been studied using current-voltage characteristics. At temperature below critical temperature the resistive contribution of the interface to the total contact resistance dominates. We have measured AC transport losses in a current lead at 77 K, 60 Hz by a transport method.

• Journal of Power Electronics
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• v.15 no.1
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• pp.116-122
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• 2015

This paper presents a new current sharing control strategy for parallel-connected, synchronised three-phase DC-AC converters employing space vector pulse width modulation (SVPWM) without current sharing reactors. Unlike conventional control methods, the proposed method breaks the paths of the circulating current by dividing the switching cycle evenly between parallel connected equally rated converters. Accordingly, any inter-module reactors or circulating current control will be redundant, leading to reductions in system costs, size, and control algorithm complexity. Each converter in the new scheme employs a synchronous dq current regulator that uses only local information to attain a desired converter current. A stability analysis of the current controller is included together with a simulation of the converter and load current waveforms. Experimental results from a 2.5kVA test rig are included to verify the proposed control method.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.2
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• pp.148-152
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• 2010

The superconducting fault current limiter (SFCL) applied into the neural line of a power system, which can limit the unsymmetrical fault current from the single-line ground fault or the double-line ground fault, was reported to be the effective application location of the SFCL in a power system. However, the limiting operation for the symmetrical fault current like the triple line-ground fault is not effective because of properties of the balanced three-phase system. In this paper, the limiting method of the symmetrical fault current in a power system with a SFCL applied into neutral line was suggested. Through the short-circuit experiments of the three-phase fault types for the suggested method, the fault current limiting and recovery characteristics of the SFCL in the neutral line were analyzed and the effectiveness of the suggested method was described.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.59-62
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• 2000

A VLSI implementation of a self-learning neural network integrated circuits using a linearity synapse transistor is investigated. The thickness dependence of oxide current density, stress current, transient current and channel current has been measured in oxides with thicknesses between 41 and 112 $\AA$, which have the channel width$\times$length 10$\times$1${\mu}{\textrm}{m}$ respectively. The transient current will affect data retention in synapse transistors and the stress current is used to estimate to fundamental limitations on oxide thicknesses. The synapse transistor has represented the neural states and the manipulation which gave unipolar weights. The weight value of synapse transistor was caused by the bias conditions. Excitatory state and inhitory state according to weighted values affected the drain source current.

• Transactions on Electrical and Electronic Materials
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• v.18 no.2
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• pp.97-102
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• 2017

A current transformer (CT) is a type of sensor that consists of a combination of electric and magnetic circuits, and it measures large ac currents. When a large amount of current flows into the primary winding, the alternating magnetic flux in the iron core induces an electromotive force in the secondary winding. The characteristics of a CT are determined by the iron core design because the iron core is saturated above a certain magnetic flux density. In particular, when a large current, such as a current surge, is input into a CT, the iron core becomes saturated and the induced electromotive force in the secondary winding fluctuates severely. Under these conditions, the CT no longer functions as a sensor. In this study, the characteristics of the secondary winding were investigated using the time-difference finite element method when a current surge was provided as an input. The CT was modeled as a two-dimensional analysis object using constraints, and the saturation characteristics of the iron core were evaluated using the Newton-Rhapson method. The results of the calculation were compared with the experimental data. The results of this study will prove useful in the designs of the iron core and the windings of CTs.

• Transactions on Electrical and Electronic Materials
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• v.17 no.5
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• pp.302-305
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• 2016

In this paper, a low on-resistance and high current driving capability trench gate power metal-oxide-semiconductor field-effect transistor (MOSFET) incorporating a current sensing feature is proposed and evaluated. In order to realize higher cell density, higher current driving capability, cost-effective production, and higher reliability, self-aligned trench etching and hydrogen annealing techniques are developed. While maintaining low threshold voltage and simultaneously improving gate oxide integrity, the double-layer gate oxide technology was adapted. The trench gate power MOSFET was designed with a 0.6 μm trench width and 3.0 μm cell pitch. The evaluated on-resistance and breakdown voltage of the device were less than 24 mΩ and 105 V, respectively. The measured sensing ratio was approximately 70:1. Sensing ratio variations depending on the gate applied voltage of 4 V ~ 10 V were less than 5.6%.

• Journal of Electrical Engineering and Technology
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• v.12 no.4
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• pp.1484-1494
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• 2017

We present a two-stage inverter with high step-up conversion ratio engaging modified finite-set Model Predictive Control (MPC) for utility-integrated photovoltaic (PV) applications. The anticipated arrangement is fit for low power PV uses, the calculated efficiency at 150 W input power and 19 times boosting ratio was around 94%. The suggested high-gain dc-dc converter based on Cockcroft-Walton multiplier constitutes the first-stage of the offered structure, due to its high step-up ability. It can boost the input voltage up to 20 times. The 3S current-source inverter constitutes the second-stage. The 3S current-source inverter hires three semiconductor switches, in which one is functioning at high-frequency and the others are operating at fundamental-frequency. The high-switching pulses are varied in the procedure of unidirectional sine-wave to engender a current coordinated with the utility-voltage. The unidirectional current is shaped into alternating current by the synchronized push-pull configuration. The MPC process are intended to control the scheme and achieve the subsequent tasks, take out the Maximum Power (MP) from the PV, step-up the PV voltage, and introduces low current with low Total Harmonic Distortion (THD) and with unity power factor with the grid voltage.

• Transactions on Electrical and Electronic Materials
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• v.16 no.1
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• pp.37-41
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• 2015

The most common structure of the current transformer (CT) consists of a length of wire wrapped many times around a silicon steel ring passed over the circuit being measured. Therefore, the primary circuit of CT consists of a single turn of the conductor, with a secondary circuit of many tens or hundreds of turns. The primary winding may be a permanent part of the current transformer, with a heavy copper bar to carry the current through the magnetic core. However, when the large current flows into a wire, it is difficult to measure its magnitude of current because the core is saturated and the core shows magnetic nonlinear characteristics. Therefore, we proposed a newly designed CT which has an air gap in the core to decrease the generated magnetic flux. Adding the air gap in the magnetic path increases the total magnetic reluctance against the same magnetic motive force (MMF). Using a ferrite core instead of steel also causes the generation of low magnetic flux. These features can protect the magnetic saturation of the CT core compared with the steel core. This technique can help the design of the CT to obtain a special shape and size.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.3
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• pp.255-260
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• 2023

In order to spread LED lighting, LED lighting technology directly driven by alternating current (AC) commercial power has recently been introduced. Since current does not flow at a voltage lower than the threshold voltage of the LED, a non-conductive section occurs in the current waveform, and the higher the threshold voltage of the LED, the more discontinuous current waveforms are generated. In this paper, multi-LED modules are connected in series so that the threshold voltage can be adjusted according to the number of LED modules. A small number of LED modules are driven at a low instantaneous rectified voltage, and a large number of LED modules are driven at a high instantaneous rectified voltage to lengthen the overall lighting time of AC-LED lighting, thereby minimizing the luminance deviation of AC-LED lighting. In addition, the load current flowing through the LED module is adjusted to be the same as the design current even at the maximum rectified voltage higher than the design voltage, so that the light brightness of the LED module is kept constant. Therefore, even if the rectified voltage applied to the LED module changes, the AC-LED lighting in which the light brightness is constant and the luminance deviation is minimal has been realized.