• Journal of the Optical Society of Korea
• /
• 제20권6호
• /
• pp.694-697
• /
• 2016

Up-converted phase noise, which is induced by the low-frequency relative intensity noise (RIN) of a laser through AM-PM conversion within a photodetector (PD), is first measured here by means of a cross-correlation method. Our proposed measurement system can isolate the RIN-induced phase noise from noise contributions of other components, such as amplifiers, modulators, and mixers. In particular, shot noise and thermal noise generated from the PD are also suppressed by this method, so that standalone characteristics of the RIN-induced phase noise can be obtained. Experimental results clearly show the quantitative relationship between the RIN-induced phase noise and the incident optical power of the PD. Our findings indicate that the least RIN-induced phase noise appeared at the saturation point of the PD, which is about -162 dBc/Hz at 10 kHz offset.

• 한국정밀공학회지
• /
• 제15권9호
• /
• pp.68-74
• /
• 1998

The ESPI(Electronic Speckle Pattern Interferometry) is a real time, full-field, non-destructive optical measurement technique that allows static and dynamic deformation analysis and surface shape measurements of engineering structures. e .g. turbine blades. vehicle engine components, body panels, etc. This technique is very similar to holographic interferometry, but uses a solid static camera and an image processing board for recording and digital processing of speckle patterns. In this paper it is presented that FEM results for the free vibration of symmetrically laminated composite as [30/-30/90]s. The natural frequencies of laminated composite rectangular plates having the particular boundary condition are experimentally obtained. In order to demonstrate the validity of the experiment, FEM analysis using ANSYS was performed and natural frequencies experimentally obtained is compared with calculation by FEM analysis. The results obtained from both experiment and FEM analysis show a good agreement.

• Transactions on Electrical and Electronic Materials
• /
• 제16권1호
• /
• pp.42-45
• /
• 2015

The ability to take electrocardiographic measurements while performing our daily activities has become the people-choice for modern age vital sign sensing. Currently, wet and dry ECG electrodes are known to pose threats like inflammations, allergic reactions, and metal poisoning due to their direct skin interaction. Therefore, the main goal in this work is to implement a very small ECG sensor system with a capacitive coupling, which is able to detect electrical signals of heart at a distance without the conductive gel. The aim of this paper is to design, implement, and characterize the contactless ECG electrodes. Under a careful consideration of factors that affect a capacitive electrode functional integrity, several different sizes of ECG electrodes were designed and tested with a pilot ECG device. A very small cotton-insulated copper tape electrode ($2.324cm^2$) was finally attained that could detect and measure bioelectric signal at about 500 um of distance from the subject's chest.

• 한국전자통신학회논문지
• /
• 제15권3호
• /
• pp.397-404
• /
• 2020

본 논문에서는 선추적법과 전달측정을 통하여, 지면반사파가 우세한 도로 개방환경에서 1, 3, 6 GHz의 전파 감쇄 특성을 분석하였다. 바닥면의 재질과 송신 안테나 높이와 수신안테나의 높이를 변화시키면서 특성을 관찰하였다. 실제 측정은 개방환경에서 10미터 높이에 설치한 지향성 송신 안테나와 1.5미터 높이에 설치한 전방향성 수신 안테나로 수행하였다. 모의실험과 측정 결과의 비교를 통하여 수신기의 최대 감쇄가 발생하는 지점의 변화 현상을 분석하였다. 비롯 넓은 도로 환경의 결과이지만, 본 연구의 결과는 향후 도로 개방환경에서 송신기와 수신기를 배치할 때 원활한 통신을 위하여 활용될 수 있을 것이다.

• 한국전기전자재료학회논문지
• /
• 제16권6호
• /
• pp.471-476
• /
• 2003

Au/oxide/n-InP Schottky diodes were fabricated from heteroepitaxial InP layers grown on GaAs substrates by the metalorganic vapor phase epitaxy (MOVPE) method from a new combination of source materials: ethyldimethylindium (EDMIn) and tertiarybutylphosphine (TBP). Anodic oxidation technique by using a solution of 10 g of ammonium pentaborate in 100 cc of ethylene glycole as the electrolyte was used to deposit a thin oxide layer. The barrier heights determined from three different techniques, current-voltage (I-V) measurements at room temperature and in the temperature range of 273 K - 373 K, and room temperature capacitance-voltage (C-V) measurements are in good agreement, 0.7 - 0.9 eV which is considerably high as compared to the 0.45 - 0.55 eV in Au/n-InP Schottky diode without a Passivation layer. The ideality factors of 1.1 - 1.3 of the Schottky diodes were also determined from the I-Y characteristics. Deep level transient spectroscopy (DLTS) studies revealed only one shallow electron state at 92.6 meV below the bottom of the conduction band and no deep state in the heteroepitaxial InP layers grown from EDMIn and TBP.

• 한국전기전자재료학회:학술대회논문집
• /
• 한국전기전자재료학회 2003년도 추계학술대회 논문집 Vol.16
• /
• pp.435-438
• /
• 2003

The effects of oxygen partial pressure and vacuum annealing on the electrical properties of sputtered vanadium oxide($VO_x$) thin films were investigated. The thin films were prepared by r.f. magnetron sputtering from $V_2O_5$ target in a gas mixture of argon and oxygen. The oxygen/(oxygen+argon) partial pressure ratio of 0% and 8% is adopted. Electrical properties of films sputter-deposited under different oxygen gas pressures and in situ annealed in vacuum at $400^{\circ}C$ for 1h and 4h are characterized through electrical conductivity measurements. I-V characteristics were distinguished between linear and nonlinear region. In the low field region the conduction is due to Schottky emission, while at high fields it changes to Fowler-Nordheim tunneling type conduction. The conductivity measurements have shown an Arrhenius dependence of the conductivity on the temperature.

• 한국전기전자재료학회논문지
• /
• 제24권7호
• /
• pp.525-531
• /
• 2011

In this paper, experimental analyses have been performed to compare the electrical characteristics of n channel LT(low temperature) and HT(high temperature) poly-Si TFTs(polycrystalline silicon thin film transistors) on quartz substrate according to activated step annealing. The size of the particles step annealed at low temperature are bigger than high temperature poly-Si TFTs and measurements show that the electric characteristics those are transconductance, threshold voltage, electric effective mobility, on and off current of step annealed at LT poly-Si TFTs are high more than HT poly-Si TFT's. Especially we can estimated the defect in the activated grade poly crystalline silicon and the grain boundary of LT poly-Si TFT have more high than HT poly-Si TFT's due to high off electric current. Even though the size of particles of step annealed at low temperature, the electrical characteristics of LT poly-Si TFTs were investigated deterioration phenomena that is decrease on/off current ratio depend on high off current due to defects in active silicon layer.

• 한국전기전자재료학회논문지
• /
• 제16권5호
• /
• pp.418-423
• /
• 2003

AC loss is an important issue in the design of high-T$\sub$c/ superconducting power cables which consist of a number of Bi-2223 tapes wound on a former. In the cables, the tapes have different critical currents intrinsically. And they are electrically connected to each other and current leads. These make loss measurements considerably complex, especially for short samples of laboratory size. So special cautions are required in the positioning of voltage leads for measuring the true loss voltage. In this work we have prepared a conductor composed of three Bi-2223 tapes with different critical currents. The critical current and AC loss characteristics in the conductor have experimentally investigated. The results show that for uniform current distributions the conductor's critical current is proportional to the critical current of the Bi-2223 tape to which a voltage lead is attached. However it depends on the current non-uniformity parameter in the conductor rather than the tape's critical currents for nonuniform current distributions. The loss tests indicate that the AC loss is dependent on arrangements of voltage leads but not on their contact positions. The measured losses in the conductor also agree well with the sum of the transport losses measured in each Bi-2223 tape.

• Transactions on Electrical and Electronic Materials
• /
• 제3권2호
• /
• pp.10-15
• /
• 2002

In this paper, the electrical characteristics of fabricated p+-n junction diode are demonstrated and interpreted with different theoretical calculations. Dopants distribution by boron ion implantation on silicon wafer were simulated with TRIM-code and ICECaEM simulator. In order to make electrical activation of implanted carriers, thermal annealing treatments are carried out by RTP method for 1min. at $1000^{circ}C$ under inert $N_2$ gas condition. In this case, profiles of dopants distribution before and after heat treatments in the substrate are observed from computer simulations. In the I-V characteristics of fabricated diodes, an analytical description method of a new triangular junction model is demonstrated and the results with calculated triangular junction are compared with measured data and theoretical calculated results of abrupt junction. Forward voltage drop with new triangular junction model is lower than the case of abrupt junction model. In the C-V characteristics of diode, the calculated data are compared with the measured data. Another I-V characteristics of diodes are measured after proton implantation in electrical isolation method instead of conventional etching method. From the measured data, the turn-on characteristics after proton implantation is more improved than before proton implantation. Also the C-V characteristics of diode are compared with the measured data before proton implantation. From the results of measured data, reasonable deviations are showed. But the C-V characteristics of diode after proton implantation are deviated greatly from the calculated data because of leakage currents in defect regions and layer shift of depletion by proton implantation.

• 한국응용과학기술학회지
• /
• 제35권4호
• /
• pp.1206-1212
• /
• 2018

본 연구에서는 강유전성 고분자를 이용하여 제작된 100 nm 이하 두께를 가지는 박막형 커페시터의 측정 주파수에 따른 분극 반전 특성을 측정, 분석하였다. 고정된 박막 두께에 대해, 인가되는 최고 전기장의 세기가 증가할수록 더 높은 항전계에서 분극 반전이 발생되었다. 고정된 최고 전기장에 대해, 박막의 두께에 무관하게 같은 항전계에서 분극 반전이 발생되었다. 모든 측정에서 로그스케일 전기장 및 로그스케일 주파수의 관계에서 약 $0.12{\pm}0.01$의 비례 상수를 보였다. 결과적으로, 강유전체 고분자 커페시터가 40 nm 두께까지는 size effect 없이 일정한 분극 반전 특성을 보였다. 본 연구는 저전압 동작 고분자 메모리 소자의 동작 예측에 유용할 것이므로 저전압에서 동작 가능한 고분자 메모리 소자의 가능성을 보여준다.