• Korean Journal of Materials Research
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• v.9 no.1
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• pp.57-64
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• 1999

The electrical conductivity of TiO$_2$ doped with 0.05~1.5mol% WO$_3$ was measured in the oxygen partial pressure range of 10\ulcorner~10\ulcorner atm and temperature range of 1100~130$0^{\circ}C$ to investigate the defect types and the electrical properties. The grain size and density were increased as the liquid phase was formed by the doped WO$_3$. The secondary phase and WO$_3$peaks at the sample doped up to 4.0 mol% were not detected from the XRD results. The data(log$\sigma$/logPo$_2$) over 110$0^{\circ}C$ were divided into the four regions. From these experimental results, we proposed the following defect regions. 1) Magneli phase(extended defect), 2) Reduced rutile region which is similar to the behavior of undoped rutile, 3) Nearly stoichiometric Ti\ulcornerW\ulcornerO$_2$region in which extra charge of W\ulcorner cation is expected to be compensated by an electron, 4) Overstoichiometric Ti\ulcornerW\ulcornerO\ulcorner region which is a metal deficiency not to be observed in pure TiO$_2$. The electrical conductivity of w-doped TiO$_2$ was influenced by the measuring temperature, oxygen partial pressure, and the dopig content.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.31.2-31.2
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• 2011

We have investigated frequency dependant conductivity (or permittivity) of low dimensional oxide structures represented by [($Sr_{0.75}$, $La_{0.25}$)$TiO_3$]$_1$/1$[SrTiO_3]_n$ superlattices. The low dimensional oxide superlattice was made by cumulative stacking of one unit cell thick La doped $SrTiO_3$ and $SrTiO_3$ with variable thickness from 1 to 6 unit cell, i,e, [($Sr_{0.75}$, $La_{0.25}$)$TiO_3$]$_1$/$[SrTiO_3]_n$ (n=1, 2, 3, 4, 5, 6). We found two kinds of relaxation when n is 3 and 4, while, inductance component was observed at n=1. This behavior can be explained by electron modulation in ($Sr_{0.75}$, $La_{0.25}$)$TiO_3/SrTiO_3$ superlattices. When n is 1, electrons by La doping well extend to un-doped layer. Therefore, the transport of superlattices follows bulk-like behavior. On the other hand, as n increased, the doped electrons became two types of carrier: one localized and the other extended. These results in two kinds of transport phase. At further increase of n, most of doped electrons are localized at the doped layer. This result shows that dimensionality of the oxide structure significantly affect the transport of oxide nanostructures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.55-56
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• 2005

The properties of phosphorus doped ZnO thin films deposited on (001) sapphire substrates by pulsed laser deposition (PLD) were investigated depending on various deposition conditions. The phosphorus (P) doped ZnO target was composed of ZnO + x wt% Al (x=1, 3, 5). The structural, electrical and optical properties of the ZnO thin films were measured by X-ray diffraction (XRD), Hall measurements and photoluminescence (PL). As the deposition temperature optimized, the electrical properties of the phosphorus doped ZnO (ZnO:P) layer showed a electron concentration of $7.76\times10^{16}/cm^3$, a mobility of 10.225 $cm^2/Vs$, a resistivity of 7.932 $\Omega$cm. It was observed the electrical property of the film was changed by dopant activation effect as target variations and deposition conditions.

• Journal of Powder Materials
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• v.21 no.3
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• pp.222-228
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• 2014

Much research into fuel cells operating at a temperature below $800^{\circ}C$. is being performed. There are significant efforts to replace the yttria-stabilized zirconia electrolyte with a doped ceria electrolyte that has high ionic conductivity even at a lower temperature. Even if the doped ceria electrolyte has high ionic conductivity, it also shows high electronic conductivity in a reducing environment, therefore, when used as a solid electrolyte of a fuel cell, the powergeneration efficiency and mechanical properties of the fuel cell may be degraded. In this study, gadolinium-doped ceria nanopowder with $Al_2O_3$ and $Mn_2O_3$ as a reinforcing and electron trapping agents were synthesized by ultrasonic pyrolysis process. After firing, their microstructure and mechanical and electrical properties were investigated and compared with those of pure gadolinium-doped ceria specimen.

• Journal of the Korean Chemical Society
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• v.53 no.6
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• pp.761-764
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• 2009

Ag-Doped bioactive ceramic composites were prepared by colloidal silver solution. The physical properties of colloidal silver solution and Ag-Doped bioactive ceramic composites were characterized by Scanning electron microscopy(SEM), X-Ray Diffractometer(XRD) and Raman spectrophotometer respectively. According to XRD, we have identified that the chloride ion was chemically attached silver nano particles. SEM studies showed that silver chloride phases were homogeneously distributed on the Ag-Doped bioactive ceramic composites surface. Finally, we concluded that the silver chloride phase on the Ag-Doped bioactive ceramic composites surface was strongly prevent formation of Ag-hydroxyapatite.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.127-130
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• 2005

The properties of phosphorus doped ZnO multilayer thin films deposited on (001) sapphire substrates by pulsed laser deposition (PLD) were investigated by using annealing treatment at various annealing temperature after deposition. The phosphorus doped ZnO multilayer was composed of phosphorus doped ZnO layer and two pure ZnO layers on sapphire substrate. The structural. electrical and optical properties of the ZnOthin films were measured by X-ray diffraction (XRD). Hall measurements and photoluminescence (PL). As the annealing temperature optimized. the electrical properties of the ZnO multilayer showed a electron concentration of $1.56{\times}10^{16}/cm^3$, a resistivity of 17.97 ${\Omega}cm$. It was observed the electrical property of the film was changed by dopant activation effect as thermal annealing process

• Bulletin of the Korean Chemical Society
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• v.10 no.5
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• pp.418-422
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• 1989

Cadmium-doped indium sesquioxide systems with a variety of CdO mol % were prepared to investigate the effect of doping on the electrical properties of indium sesquioxide. The electrical conductivities of pure $In_2O_3$ and Cd-doped $In_2O_3$ systems were measured in the temperature range from 25 to $1200^{\circ}C$ and $P_O_2$ range from $10^{-7}$ to $10^{-1}$ atm, and the thermoelectric power was measured in the same temperature range. The electrical conductivity and thermopower decreased with increasing CdO mol % indicating that all the samples are n-type semiconductors. The electrical conductivities of pure $In_2O_3$ and lightly doped $In_2O_3$ were considerably affected by the chemisorption $O_2$ at temperatures of 400 to $560^{\circ}C$ and then gaseous oxygen was reversibly chemisorbed at the temperature. The predominant defects in $In_2O_3$ are believed to be triply-charged interstitial indiums at temperatures above $560^{\circ}C$ and oxygen vacancies below $560^{\circ}C$. In Cd-doped $In_2O_3$ systems, cadmium acts as an electron acceptor and inhibits the transfer of lattice indium to interstitial sites, which give rise to the decrease of the electrical conductivity.

• Journal of the Korean Vacuum Society
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• v.16 no.2
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• pp.105-109
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• 2007

In this paper, we fabricated TCO (transparent conductive oxide) electrode on flexible substrate in order to study effects of electrical and optical properties according to Al-doped ZnO(AZO) film thickness. The thickness of film was from 100 nm to 500 nm and was controlled by changing deposition time. We used High Resolution X-ray Diffractometer (HR-XRD) to analyze crystal structure and UV-visible spectrophotometer to measure property of optical transmittance, respectively. The surface images are obtained by using ESEM (Environment Scanning Electron Microscopy). In this experiment, all the AZO films deposited on flexible substrate show high transmittance over 90% and especially in the films with 400 nm and 500 nm thickness, the resistivity ($4.5{\times}10^{-3}\;{\Omega}-cm$) and optical bandgap energy (3.61 eV) are superior to the other films.

• Journal of the Korean Graphic Arts Communication Society
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• v.22 no.2
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• pp.179-198
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• 2004

Organic electroluminescent devices are light-emitting diodes in which the active materials consist entirely of organic materials. Recently, many fluorescent organic materials have been reported and the study on synthesis and application of new organic light-emitting materials has been demanded. This paper reports the optical and electrical characteristics of OLEDs using novel polymers containing biphenyl structure. First, Optical properties of novel light-emitting biphenyl derivatives doped with poly(9-vinyl carbazole)(PVK) and emitted blue, bluish green color, which is attributed to the overlap area between PL spectrum of host(PVK) and absorption spectra of guests(polymer). This is correspondent with F$\"{o}$rster energy transfer process in the blends. And, OLED devices were fabricated using poly (3,4-ethylenedioxy thiophene) (PEDOT) as a hole injection material and tris-(8-hydroxyquinoline) aluminum ($Alq_3$) as an electron transporting material. EL devices fabricated as ITO/PEDOT/PVK doped with biphenyl derivatives/$Alq_3$/Li:Al and I-V-L chatacteristics and emitting efficiency of EL devices were examined. Finally, the drift mobility of PVK doped with biphenyl derivatives and $Alq_3$ were measured by TOF technique varying applied electric field. EL efficiency was increased as the ratio of hole mobility of PVK doped with biphenyl derivatives and electron mobility of $Alq_3$ was close to one.

• Journal of the Korean Ceramic Society
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• v.38 no.1
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• pp.100-105
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• 2001

An all solid-state thin film battery (TFB) was fabricated by growing, undoped and Pt-doped vanadium oxide cathode film ( $V_2$ $O_{5}$ ) on I $n_2$ $O_3$: Sn coated glass, respectively. Room temperature charge-discharge measurements based on Li/Lipon/ $V_2$ $O_{5}$ full-cell structure with a constant current clearly shows that the Pt-doped $V_2$ $O_{5}$ cathode film is superior, in terms of cyclibility. X-ray diffraction (XRD) results indicate that the Pt doping process induces a more random amorphous structure than an undoped $V_2$ $O_{5}$ film. In addition to its modified structure, the Pt-doped $V_2$ $O_{5}$ film has a smoother surface than the undoped sample. Compared to an undoped $V_2$ $O_{5}$ film, the Pt doped $V_2$ $O_{5}$ cathode film has a higher electron conductivity. We hypothesize that the addition of Pt alters electrochemical performance in a manner of making more random amorphous structure and gives an excess electron by replacing the $V^{+5}$. Possible mechanisms are discussed for the observed Pt doping effect on structural and electrochemical properties of vanadium oxide cathode films, which are grown on I $n_2$ $O_3$: Sn coated glass.