• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.156-156
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• 2010

We have developed highly efficient blue phosphorescent organic light-emitting devices (OLED) with simplified architectures using blue phosphorescent material. The basis device structure of the blue PHOLED was anode / emitting layer (EML) / electron transport layer (ETL) / cathode. The dopant was partially doped into the host layer for investigating recombination zone, current efficiency, and emission characteristics of the blue PHOLEDs.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2012.05a
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• pp.247-247
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• 2012

Gd-doped ZnO thin films were prepared with different growth temperatures by using a radio-frequency magnetron sputtering method. The deposited samples were characterized by using the X-ray diffractometer, the scanning electron microscopy, and the photoluminescence spectroscopy. All of the films show an average transmittance of about 85% in the wavelength range from 400 to 1100 nm.

• Advances in Energy Research
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• v.4 no.4
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• pp.275-284
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• 2016

In the present work, ZnO nanoparticles (NPs) have been dispersed alone in the same solvent of the active layer for improving performance parameters of the organic solar cells. Different concentrations of the ZnO NPs have been blended inside active layer of the solar cell based on poly(3-hexylthiophene) (P3HT), which forms the hole-transport network, and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), which forms the electron-transport network. In the present investigations, the ZnO NPs may represent an efficient tool for improving light harvesting through light scattering inside active layer, electron mobility, and electron acceptance strength which tend to improve photocurrent and performance parameters of the investigated solar cell. The fill factor (FF) of the ZnO-doped solar cell increases nearly 14% compared to the non-doped solar cell when the doping is 50%. The present investigations show that ZnO NPs improve power conversion efficiency of the solar cell from 1.23% to 1.64% with increment around 25% that takes place after incorporation of 40% as a volume ratio of the ZnO NPs inside P3HT:PCBM active layer.

• Journal of the Korean institute of surface engineering
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• v.49 no.6
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• pp.490-497
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• 2016

In this study, 3-dimensional ripple structured anion (chlorine) doped ZnO thin film are developed, and used as electron transporting layer (ETL) in inverted organic photovoltaics (I-OPVs). Optical and electrical characteristics of ZnO:Cl ETL are investigated depending on the chlorine doping ratio and optimized for high efficient I-OPV. It is found that optimized chlorine doping on ZnO ETL enhances the ability of charge transport by modifying the band edge position and carrier mobility without decreasing the optical transmittance in the visible region, results in improvement of power conversion efficiency of I-OPV. The highest performance of 8.79 % is achieved for I-OPV with ZnO:Cl-x (x=0.5wt%), enhanced ~10% compared to that of ZnO:Cl-x (x=0wt%).

• KIEE International Transactions on Electrophysics and Applications
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• v.3C no.1
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• pp.19-22
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• 2003

The co-evaporated cathodes composed of A1 and CsF is adopted to enhance the electrical and the optical properties of organic light emitting diodes (OLEDs). The hole transport layer (HTL), made of 50nm thick N,N-dipheny1-N,N-bis(3-methylphenyl)-1,1-bipheny14,4-diamine (TPD), and the electron transport layer (ETL), made of 50nm thick tris(8-hydroxy-quinoline) aluminum (A1q$_3$), were deposited under the base pressure of 1.6$\times$10$^{-6}$ Torr. In depositing A1-CsF, the mass ratio of CsF is varied between 1 and 10wt%. OLEDs with co-evaporated cathodes have luminance of about 35,000cd/$m^2$, and external quantum efficiency of about 1.38%. Cs tends to diffuse into the organic layer and then re-forms Cs$^{+}$cation and free electron with the Cs-doped surface region.n.

• Carbon letters
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• v.17 no.1
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• pp.53-64
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• 2016

Nitrogen (N)-doped ordered mesoporous carbons (OMCs) with a dual transition metal system were synthesized as non-Pt catalysts for the ORR. The highly nitrogen doped OMCs were prepared by the precursor of ionic liquid (3-methyl-1-butylpyridine dicyanamide) for N/C species and a mesoporous silica template for the physical structure. Mostly, N-doped carbons are promoted by a single transition metal to improve catalytic activity for ORR in PEMFCs. In this study, our N-doped mesoporous carbons were promoted by the dual transition metals of iron and cobalt (Fe, Co), which were incorporated into the N-doped carbons lattice by subsequently heat treatments. All the prepared carbons were characterized by via transmission electron microscopy (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). To evaluate the activities of synthesized doped carbons, linear sweep was recorded in an acidic solution to compare the ORR catalytic activities values for the use in the PEMFC system. The dual transition metal promotion improved the ORR activity compared with the single transition metal promotion, due to the increase in the quaternary nitrogen species from the structural change by the dual metals. The effect of different ratio of the dual metals into the N doped carbon were examined to evaluate the activities of the oxygen reduction reaction.

• 한국신재생에너지학회:학술대회논문집
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• 2010.11a
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• pp.39.2-39.2
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• 2010

In this work we have investigated electrical and optical properties of interface for ITO/Si with shallow doped emitter. The ITO is prepared by DC magnetron sputter on p-type monocrystalline silicon substrate. As an experimental result, The transmittance at 640nm spectra is obtained an average transmittance over 85% in the visible range of the optical spectrum. The energy bandgap of ITO at oxygen flow from 0% to 4% obtained between 3.57eV and 3.68eV (ITO : 3.75eV). The energy bandgap of ITO is depending on the thickness, sturcture and doping concentration. Because the bandgap and position of absorption edge for degenerated semiconductor oxide are determined by two competing mechanism; i) bandgap narrowing due to electron-electron and electron-impurity effects on the valance and conduction bands (> 3.38eV), ii) bandgap widening by the Burstein-Moss effect, a blocking of the lowest states of the conduction band by excess electrons( < 4.15eV). The resistivity of ITO layer obtained about $6{\times}10^{-4}{\Omega}cm$ at 4% of oxygen flow. In case of decrease resistivity of ITO, the carrier concentration and carrier mobility of ITO film will be increased. The contact resistance of ITO/Si with shallow doped emitter was measured by the transmission line method(TLM). As an experimental result, the contact resistance was obtained $0.0705{\Omega}cm^2$ at 2% oxygen flow. It is formed ohmic-contact of interface ITO/Si substrate. The emitter series resistance of ITO/Si with shallow doped emitter was obtained $0.1821{\Omega}cm^2$. Therefore, As an PC1D simulation result, the fill factor of EWT solar cell obtained above 80%. The details will be presented in conference.

• Bulletin of the Korean Chemical Society
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• v.35 no.2
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• pp.494-500
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• 2014

Indium-doped zinc oxide nanocrystals (IZO NCs), capped with stearic acid (SA) of different sizes, were synthesized using a hot injection method in a noncoordinating solvent 1-octadecene (ODE). The ligand exchange process was employed to modify the surface of IZO NCs by replacing the longer-chain ligand of stearic acid with the shorter-chain ligand of butylamine (BA). It should be noted that the ligand-exchange percentage was observed to be 75%. The change of particle size, morphology, and crystal structures were obtained using a field emission scanning electron microscope (FE-SEM) and X-ray diffraction pattern results. In our study, the 5 nm and 10 nm IZO NCs capped with stearic acid (SA-IZO) were ligand-exchanged with butylamine (BA), and were then spin-coated on a thermal oxide ($SiO_2$) gate insulator to fabricate a thin film transistor (TFT) device. The films were then annealed at various temperatures: $350^{\circ}C$, $400^{\circ}C$, $500^{\circ}C$, and $600^{\circ}C$. All samples showed semiconducting behavior and exhibited n-channel TFT. Curing temperature dependent on mobility was observed. Interestingly, mobility decreases with the increasing size of NCs from 5 to 10 nm. Miller-Abrahams hopping formalism was employed to explain the hopping mechanism insight our IZO NC films. By focusing on the effect of size, different curing temperatures, electron coupling, tunneling rate, and inter-NC separation, we found that the decrease in electron mobility for larger NCs was due to smaller electronic coupling.

• Particle and aerosol research
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• v.6 no.4
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• pp.165-172
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• 2010

Titania is widely used as an effective photocatalyst for the photodegradation of environmental pollutants in air. In this study, novel N-doped $ZrO_2/TiO_2$ photocatalysts were synthesized via sol-gel method and characterized by UV-Vis spectrophotometer, transmission electron microscope, and X-ray diffractometer. N-doped $ZrO_2/TiO_2$ photocatalysts were nano-sized with an average particle size of about 20 nm. The XRD pattern of N-doped $ZrO_2/TiO_2$ photocatalysts showed both anatase and rutile phases. The photocatalytic activity of N-doped $ZrO_2/TiO_2$ photocatalysts was evaluated by degradation of NO under UV and visible light irradiation at various parameters such as amount of photocatalyst, concentration of NO, and intensity of light. The photocatalytic activity of N-doped $ZrO_2/TiO_2$ photocatalysts was effective for the enhancement of the degradation of NO and higher than that of $TiO_2$ photocatlysts under UV and visible light irradiation.

• Journal of the Korean Ceramic Society
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• v.55 no.6
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• pp.576-580
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• 2018

In this study, a small amount of CoO was added to commercial Gd-doped $CeO_2$ (GDC) powder. The CoO addition greatly enhanced sinterability at low temperatures, i.e., more than 98% of relative density was achieved at $1,000^{\circ}C$. When GDC/8YSZ (8 mol% yttrium stabilized zirconia) bilayers were sintered, Co-doped GDC showed excellent adhesion to the YSZ electrolyte. Transmission electron microscope (TEM) analysis showed that there were no traces of liquid films at the grain boundaries of GDC, whereas liquid films were observed in the Co-doped GDC sample. Because liquid films facilitate particle rearrangement and migration during sintering, mechanical stresses at the interface of a bilayer, which are developed based on different densification rates between the layers, might be reduced. In spite of $Co^{2+}$ doping in GDC, the electrical conductivity was not significantly changed, relative to GDC.