• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 1999.05a
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• pp.394-397
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• 1999

Impact ionization, which is a kind of a carrier-carrier interaction process occurring in a semiconductor under the influence of a high electric field, is necessary to analyse carrier transport properties. Since the parabolic or nonparabolic E-k relation is different from real band structure in high energy range, exact model of impart ionization have been presented using full band I-k relation and Fermi's golden rule. We have investigated relation of density of states, energy band structure and overlap integral. We make use of empirical pseudopotential method in order to calculate energy band structure of silicon, tetrahedron method in order to calculate density of states. We know density of states very depends on energy band structure and overlap integral depends on the primary electron energy.

• Journal of the Korean Chemical Society
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• v.41 no.3
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• pp.144-149
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• 1997

Organic electroluminescence devices(ELD) were fabricated using by molecularly doped method with N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine(TPD) as a hole transport agent, squarylium dye as an emitting agent, and side chain liquid crystalline polymer(MCH) as matrix for TPD. An indium-tin-oxide(ITO) coated glass and an Mg electrode were used as the hole and the electron injecting electrode, respectively. The highest stability of ELD was obtained by spin coating method using dichloroethane as a solvent at a polymer/TPD concentration of 0.005 wt%. For the EL cell with ITO/polymer-TPD/SQ dye/Mg structure, we achieved light red luminescence at a current of 102 mA/$cm^2$ with an applied voltage of 23 V.

• Bulletin of the Korean Chemical Society
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• v.35 no.11
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• pp.3188-3194
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• 2014

Compound K (CK) was formulated as polymeric micelles (PM) using Pluronic$^{(R)}$ F-127 to enhance the oral absorption of CK, an intestinal bacterial metabolite of ginseng protopanaxadiol saponin. The physicochemical properties of Ck-loaded PM were characterized and an in vitro transport study using the Caco-2 cell system as well as an in vivo pharmacokinetic study using SD rats was carried out. The hydrodynamic mean particle size of CK-loaded PM (CK-PM) was $254{\pm}23.45nm$ after rehydration and the drug loading efficiency was ca. 99.9%. The FT-IR spectroscopy, X-ray diffraction, differential scanning calorimetry and scanning electron microscopy data supported the presence of a new solid phase in the PM. The $P_{app}$ value of in vitro Caco-2 cell permeation of CK-PM and the oral absorption of CK was enhanced about 1.2-fold and 2.6-fold compared to CK suspension, respectively, showing that the present PM formulation enabled an enhancement of oral CK absorption.

• Journal of the Korean Ceramic Society
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• v.56 no.2
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• pp.146-152
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• 2019

In order to study the transport behavior of tripolyphosphate (TPP) in aqueous solutions, the adsorption process of TPP on synthetic goethite, which exists stably in supergene environment, has been systematically studied. The adsorption properties under different conditions (pH, electrolyte presence, and temperature) were investigated. The adsorption of TPP in the presence of humic acid (HA)/fulvic acid (FA) has also been discussed in this paper. The results indicated that the adsorption capacity quickly increased within the first hour and equilibrium was reached within 24 h. The adsorption capacity decreased from 1.98 to 0.27 mg·g^-1 upon increasing the pH from 8.5 to 11.0, whereas the adsorption of TPP on goethite hardly changed with increasing electrolyte concentration. The results of analysis of the kinetic and isothermal models showed that the adsorption was more in accord with the pseudo second-order equation and Freundlich model. The adsorption capacity decreased obviously regardless of the order of addition of TPP, HA, and goethite. Subsequent addition of FA led to a large increase in the adsorption capacity, which might be attributed to the adsorption ability of FA. According to the predictions of the kinetic and isothermal models and the spectroscopic evidence (X-ray diffraction (XRD), Fourier Transform infrared spectroscopy (FT-IR), and scanning electron microscope (SEM)), the adsorption mechanism may be mainly based on surface complexation and physical adsorption.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.451-454
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• 2000

The impact ionization(I.I.) is necessary to analyze carrier transport properties under the influence of high electric field. The full band I-k relation and Fermi's golden rule are used for the calculation of impact ionization rate. We have investigated the temperature- and field-dependent impact ionization coefficient for silicon using full band Monte Carlo simulation. The impact ionization coefficients calculated by our impact ionization model are agreed with experimental data at look. We know that impact ionization coefficients and electron energies are decreasing along increasing temperature due to increase of phonon scattering, especially by emission. The logarithm of impact ionization coefficients are fitted to linear function for temperature and field. The residuals of linear function are within the error bound of 5%. We know logarithmic impact ionization coefficients are linearly dependent on temperature and field.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.490-490
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• 2011

Graphene, hexagonal network of carbon atoms forming a one-atom thick planar sheet, has been emerged as a fascinating material for future nanoelectronics. Huge attention has been captured by its extraordinary electronic properties, such as bipolar conductance, half integer quantum Hall effect at room temperature, ballistic transport over ${\sim}0.4{\mu}m$ length and extremely high carrier mobility at room temperature. Several approaches have been developed to produce graphene, such as micromechanical cleavage of highly ordered pyrolytic graphite using adhesive tape, chemical reduction of exfoliated graphite oxide, epitaxial growth of graphene on SiC and single crystalline metal substrate, and chemical vapor deposition (CVD) synthesis. In particular, direct synthesis of graphene using metal catalytic substrate in CVD process provides a new way to large-scale production of graphene film for realization of graphene-based electronics. In this method, metal catalytic substrates including Ni and Cu have been used for CVD synthesis of graphene. There are two proposed mechanism of graphene synthesis: carbon diffusion and precipitation for graphene synthesized on Ni, and surface adsorption for graphene synthesized on Cu, namely, self-limiting growth mechanism, which can be divided by difference of carbon solubility of the metals. Here we present that large area, uniform, and layer controllable graphene synthesized on Cu catalytic substrate is achieved by acetylene-assisted CVD. The number of graphene layer can be simply controlled by adjusting acetylene injection time, verified by Raman spectroscopy. Structural features and full details of mechanism for the growth of layer controllable graphene on Cu were systematically explored by transmission electron microscopy, atomic force microscopy, and secondary ion mass spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.454-454
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• 2011

Graphene shows unusual electronic properties, such as carrier mobility as high as 10,000 $cm^2$/Vs at room temperature and quantum electronic transport, due to its electronic structure. Carrier mobility of graphene is ten times higher than that of Silicon device. On the one hand, quantum mechanical studies have continued on graphene. One of them is quantum Hall effect which is observed in graphene when high magnetic field is applied under low temperature. This is why two dimension electron gases can be formed on Graphene surface. Moreover, quantum Hall effect can be observed in room temperature under high magnetic field and shows fractional quantization values. Quantum Hall effect is important because quantized Hall resistances always have fundamental value of h/$e^2$ ~ 25,812 Ohm and it can confirm the quantum mechanical behaviors. The value of the quantized Hall resistance is extremely stable and reproducible. Therefore, it can be used for SI unit. We study to measure quantum Hall effect in CVD graphene. Graphene devices are made by using conventional E-beam lithography and RIE. We measure quantum Hall effect under high magnetic field at low temperature by using He4 gas closed loop cryostat.

• Proceedings of the Korea Crystallographic Association Conference
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• 2003.05a
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• pp.8-8
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• 2003

Electron-phonon interaction plays a significant role in forming of colossal magnetoresistance effect (CMR). Polaron formation was observed by neutron diffraction and by extended X-ray absorption fine structure (EXAFS) analysis. Local probe as given by the EXAFS is a useful method to study the polaronic charge and its dependence on temperature and ions size. Here we present the EXAFS study of polaronic charge in La/sub 0.7/Ca/sub 0.3-X/Ba/sub X/MnO₃ compositions. The single phase La/sub 0.7/Ca/sub 0.3-X/Ba/sub X/MnO₃ manganites (x=0; 0.03; 0.06, ..., 0.3) were prepared by ceramic technology [1]. The Curie temperature was determined by extrapolation of the temperature dependence of the magnetization (down to zero magnetization). EXAFS experiments were carried out at the 7C EC beam line of the Pohang Light Source (PLS) in Korea. The atomic pair distribution functions (PDF) were obtained by re-regularization method [2] from filtered spectra. The PDF for the x=0.3 sample showed a single peak function and for x=0.0, 0.03, 0.06, 0.09, 0.12 compositions were asymmetric in agreement with a small Jahn-Teller elongation of two (short and long) bonds of the MnO/sub 6/ octahedron. Dispersion, σ/sub Min-O//sup 2/, and asymmetry, σ/sub Min-O//sup 3/, of the Mn-O bond distances varied significantly with x and showed a maximums at x=0.09. The maximum of σ/sub Min-O//sup 2/ is caused by increase of dynamic rms displacements of the Mn-O distances near the T/sub C/. The observed x dependence of σ/sub Min-O//sup 3/ reflects the reduction of charge carriers mobility at approaching to T/sub C/ from low as well as high temperatures.

• Korean Journal of Materials Research
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• v.27 no.1
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• pp.32-38
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• 2017

Insulating $TaN_x$ films were grown by plasma enhanced atomic layer deposition using butylimido tris dimethylamido tantalum and $N_2+H_2$ mixed gas as metalorganic source and reactance gas, respectively. Crossbar devices having a $Pt/TaN_x/Pt$ stack were fabricated and their electrical properties were examined. The crossbar devices exhibited temperature-dependent nonlinear I (current) - V (voltage) characteristics in the temperature range of 90-300 K. Various electrical conduction mechanisms were adopted to understand the governing electrical conduction mechanism in the device. Among them, the PooleFrenkel emission model, which uses a bulk-limited conduction mechanism, may successfully fit with the I - V characteristics of the devices with 5- and 18-nm-thick $TaN_x$ films. Values of ~0.4 eV of trap energy and ~20 of dielectric constant were extracted from the fitting. These results can be well explained by the amorphous micro-structure and point defects, such as oxygen substitution ($O_N$) and interstitial nitrogen ($N_i$) in the $TaN_x$ films, which were revealed by transmission electron microscopy and UV-Visible spectroscopy. The nonlinear conduction characteristics of $TaN_x$ film can make this film useful as a selector device for a crossbar array of a resistive switching random access memory or a synaptic device.

• ETRI Journal
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• v.37 no.6
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• pp.1135-1142
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• 2015

Multilayered ZnO-$SnO_2$ heterostructure thin films consisting of ZnO and $SnO_2$ layers are produced by alternating the pulsed laser ablation of ZnO and $SnO_2$ targets, and their structural and field-effect electronic transport properties are investigated as a function of the thickness of the ZnO and $SnO_2$ layers. The performance parameters of amorphous multilayered ZnO-$SnO_2$ heterostructure thin-film transistors (TFTs) are highly dependent on the thickness of the ZnO and $SnO_2$ layers. A highest electron mobility of $43cm^2/V{\cdot}s$, a low subthreshold swing of a 0.22 V/dec, a threshold voltage of 1 V, and a high drain current on-to-off ratio of $10^{10}$ are obtained for the amorphous multilayered ZnO(1.5nm)-$SnO_2$(1.5 nm) heterostructure TFTs, which is adequate for the operation of next-generation microelectronic devices. These results are presumed to be due to the unique electronic structure of amorphous multilayered ZnO-$SnO_2$ heterostructure film consisting of ZnO, $SnO_2$, and ZnO-$SnO_2$ interface layers.