• Title/Summary/Keyword: electron transport properties

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Electronic and carrier transport properties of small molecule donors

  • Valencia-Maturana, Ramon;Pao, Chun-Wei
    • Coupled systems mechanics
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    • v.6 no.1
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    • pp.75-96
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    • 2017
  • As electron donor/acceptor materials for organic photovoltaic cells, small-molecules donors/acceptor are attracting more and more attention. In this work, we investigated the electronic structures, electrochemical properties, and charge carrier transport properties of four recently-synthesized small-molecule donors/acceptor, namely, DPDCPB (A), DPDCTB (B), DTDCPB (A1), and DTDCTB (B1), by a series of ab initio calculations. The calculations look into the electronic structure of singly oxidized and reduced molecules, the first anodic and cathodic potentials, and the electrochemical gaps. Results of our calculations were in accord with those from experiments. Using Marcus theory, we also computed the reorganization energies of hole/electron hoppings, as well as hole/electron transfer integrals of multiple possible molecular dimer configurations. Our calculations indicated that the electron/hole transport properties are very sensitive to the relative separations/orientations between neighboring molecules. Due to high reorganization energies for electron hopping, the hole mobilities in the molecular crystals are at least an order of magnitude higher than the electron mobilities.

Electron Transport Properties of Zn(phen)q Compared with Alq3 in OLED

  • Kim, Byoung-Sang;Kim, Dong-Eun;Choi, Gyu-Chae;Park, Jun-Woo;Lee, Burm-Jong;Kwon, Young-Soo
    • Journal of Electrical Engineering and Technology
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    • v.4 no.3
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    • pp.418-422
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    • 2009
  • We synthesized new electroluminescence materials [(1,10-phenanthroline)(8-hydroxyquinoline)] Zn(phen)q and investigated their electron transport properties. We used Zn(phen)q and $Alq_3$ for the conductive materials and measured their electron transport properties as a function of the organic layer thickness. The difference between Zn(phen)q and $Alq_3$ as electron transporting materials suggests that the electrical properties depends on the carrier injection.

Electron Transport Properties in Xenon Gas Detectors

  • Date, H.;Ishimaru, Y.;Shimozuma, M.
    • Proceedings of the Korean Society of Medical Physics Conference
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    • 2002.09a
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    • pp.285-288
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    • 2002
  • In this study, we investigate electron transport properties in xenon gas by using a Monte Carlo technique for electrons with energies below 10 keV. First of all, we determine a set of electron collision cross sections with xenon by scrutinizing the cross section data taken from many publications. Then, the W value and the Fano factor for electrons in gaseous xenon are computed by the Monte Carlo simulation on the assumption that electrons undergo single collision events including elastic, excitation and ionization processes. We also evaluate the production number of excited atoms.

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A study on the electron transport properties in HgCdTe using monte carlo method (몬테칼로 방법을 사용한 HgCdTe에서의 전자 전송 특성에 관한 연구)

  • 유상동;곽계달
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.2
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    • pp.40-51
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    • 1998
  • Electron transport properties are investigated by Monte Carlo simulation in n-HgCdTe. The material is easily degenerated at low temperature or being slightly doped, and is characterized by small band gap and large nonparabolic factor. The degeneracy is incorporated in the Monte Carlo simulation by taking into account the electron-electron scattering and the pauli exclusion principle. In the conventional method, however, the electron-electron scattering rate was developed under the assumption of parabolic conduction band. A new formulation of the electron-electron scattering rate is develop considering the band nonparabolicity and overlap integral. The electron-electron scattering effects on the electron distribution,impact ionization coefficienty, electron temperature, drift velocity and electron energy are presented.

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Effect of Sputtering Power on Optical and Electrical Properties of SnOx Electron Transport Layer Deposited by RF-magnetron Sputtering (RF-마그네트론 스퍼터링으로 증착된 산화주석 전자수송층의 광학적 및 전기적 특성에 대한 증착 전력의 영향)

  • Hwang, Ji Seong;Lee, Wonkyu;Hwang, Jae Keun;Lee, Sang-Won;Hyun, Ji Yeon;Lee, Solhee;Jeong, Seok Hyun;Kang, Yoonmook;Kim, Donghwan;Lee, Hae-Seok
    • Current Photovoltaic Research
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    • v.9 no.1
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    • pp.1-5
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    • 2021
  • The properties of the electron transport layer (ETL) have a great effect on perovskite solar cell performance. Depositing conformal SnO2 ETL on bottom textured silicon cells is essential to increase current density in terms of the silicon-perovskite tandem solar cells. In the recent study, the SnO2 electron transport layer deposited by the sputtering method showed an efficiency of 19.8%. Also, an electron transport layer with a sputtered TiO2 electron transport layer in a 4-terminal tandem solar cell has been reported. In this study, we synthesized SnOx ETL with a various sputtering power range of 30-60W by Radio-frequency (RF)-magnetron sputtering. The properties of SnOx thin film were characterized using ellipsometer, UV-vis spectrometer, and IV measurement. With a sputtering power of 50W, the solar cell showed the highest efficiency of 13.3%, because of the highest fill factor by the conductivity of SnOx film.

A Study on Temperature Dependence of the Electron Transport Properties of Gallium Arsenide using a Monte Carlo Method (Monte Carlo Method을 이용한 GaAs 전자전송특성의 온도의존성에 관한 연구)

  • Yoon, J.S.;Ha, S.Ch.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1988.05a
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    • pp.56-59
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    • 1988
  • Electron transport properties of gallium arsenide in an electric field are simulated the drift velocity, Mn.energy, electron occupation, mobility in the temperature range $77^{\circ}K-500^{\circ}K$ using a Monte Carlo Method. Therefore it can be used for a GaAs MESFET design.

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The Electro-optical Properties of Multilayer EL Devices with P3HT as Emitting layer (P3HT를 이용한 다층막 전계발광 소자의 전기-광학적 특성)

  • Kim, Dae-Jung;Kim, Ju-Seung;Kim, Jeong-Ho;Gu, Hal-Bon
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.1018-1021
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    • 2003
  • We have synthesized poly(3-hexylthiophene) and studied the optical properties of P3HT for applying to the red emitting materials of organic electroluminescent device. Usually, an organic EL device is composed of single layer like anode/emitting layer/cathode, but additional layer such as hole transport, electron transport and buffer layer is deposited to improve device efficiency. In this study, Multilayer EL devices were fabricated using tris(8-hydroxyquinolinate) aluminum($Alq_3$) as electron transport material, (N,N'-diphenyl-N,,N'(3-methylphenyl)-1,1'-biphenyl-4,4'diamine))(TPD) as hole transport/electron blocking materials and LiF as buffer layer. That is, a device structure of ITO/blending layer(TPD+P3HT)/$Alq_3$/LiF/Al was employed. In the Multilayer device, the luminance of $10{\mu}W/cm^2$ obtained at 10V. And, we present the experimental evidence of the enhancement of the Foster energy transfer interaction in emitting layer.

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Fully Solution-Processed Green Organic Light-Emitting Diodes Using the Optimized Electron Transport Layers (최적화된 전자 수송층을 활용한 완전한 용액공정 기반 녹색 유기발광다이오드)

  • Han, Joo Won;Kim, Yong Hyun
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.31 no.7
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    • pp.486-489
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    • 2018
  • Solution-processed organic light-emitting diodes (OLEDs) have the advantages of low cost, fast fabrication, and large-area devices. However, most studies on solution-processed OLEDs have mainly focused on solution-processable hole transporting materials or emissive materials. Here, we report fully solution-processed green OLEDs including hole/electron transport layers and emissive layers. The electrical and optical properties of OLEDs based on solution-processed TPBi (2,2',2"-(1,3,5-Benzinetriyl)-tris(1-phenyl-1-H-benzimidazole)) as the electron transport layer were investigated with respect to the spin speed and the number of layers. The performance of OLEDs with solution-processed TPBi exhibits a power efficiency of 9.4 lm/W. We believe that the solution-processed electron transport layers can contribute to the development of efficient fully solution-processed multilayered OLEDs.

Electrical and transport properties of carbon chains encapsulated within CNT

  • KIM, Tae Hyung;KIM, Hu Sung;KIM, Yong-Hoon
    • Proceeding of EDISON Challenge
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    • 2017.03a
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    • pp.457-462
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    • 2017
  • A linear carbon chain with pure sp hybridization has been intensively studied for the application of its intrinsic electrical properties to electronic devices. Owing to the high chemical reactivity derived from its unsaturated bond, encapsulation by carbon nanotubes (CNT) is provided as a promising method to stabilize the geometry of the linear carbon chain. Although the influence of CNT on the carbon chain has extensively been studied in terms of both electronic structure and geometries, the electron transport properties has not been discussed yet. In this regard, we provide the systematic atomic-scale analyses of the properties of the linear carbon chain within CNT based on a computational approach combining density-functional theory (DFT) and matrix green function (MGF) method. Based on the DFT calculations, the influence of CNT on electronic structures of the linear carbon chain is provided as well as its electrical origin. Via MGF calculations, we also identify the electron transport properties of the carbon chain - CNT complex.

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Electron Trapping and Transport in Poly(tetraphenyl)silole Siloxane of Quantum Well Structure

  • Choi, Jin-Kyu;Jang, Seung-Hyun;Kim, Ki-Jeong;Sohn, Hong-Lae;Jeong, Hyun-Dam
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.158-158
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    • 2012
  • A new kind of organic-inorganic hybrid polymer, poly(tetraphenyl)silole siloxane (PSS), was invented and synthesized for realization of its unique charge trap properties. The organic portions consisting of (tetraphenyl)silole rings are responsible for electron trapping owing to their low-lying LUMO, while the Si-O-Si inorganic linkages of high HOMO-LUMO gap provide the intrachain energy barrier for controlling electron transport. Such an alternation of the organic and inorganic moieties in a polymer may give an interesting quantum well electronic structure in a molecule. The PSS thin film was fabricated by spin-coating of the PSS solution in THF organic solvent onto Si-wafer substrates and curing. The electron trapping of the PSS thin films was confirmed by the capacitance-voltage (C-V) measurements performed within the metal-insulator-semiconductor (MIS) device structure. And the quantum well electronic structure of the PSS thin film, which was thought to be the origin of the electron trapping, was investigated by a combination of theoretical and experimental methods: density functional theory (DFT) calculations in Gaussian03 package and spectroscopic techniques such as near edge X-ray absorption fine structure spectroscopy (NEXAFS) and photoemission spectroscopy (PES). The electron trapping properties of the PSS thin film of quantum well structure are closely related to intra- and inter-polymer chain electron transports. Among them, the intra-chain electron transport was theoretically studied using the Atomistix Toolkit (ATK) software based on the non-equilibrium Green's function (NEGF) method in conjunction with the DFT.

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