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http://dx.doi.org/10.5370/JEET.2009.4.3.418

Electron Transport Properties of Zn(phen)q Compared with Alq3 in OLED  

Kim, Byoung-Sang (Dept. of Electrical Engineering & NTRC, Dong-A University)
Kim, Dong-Eun (Dept. of Electrical Engineering & NTRC, Dong-A University)
Choi, Gyu-Chae (Dept. of Electrical Engineering & NTRC, Dong-A University)
Park, Jun-Woo (Dept. of Electrical Engineering & NTRC, Dong-A University)
Lee, Burm-Jong (Dept. of Biomedicinal Chemistry, Inje University)
Kwon, Young-Soo (Dept. of Electrical Engineering & NTRC, Dong-A University)
Publication Information
Journal of Electrical Engineering and Technology / v.4, no.3, 2009 , pp. 418-422 More about this Journal
Abstract
We synthesized new electroluminescence materials [(1,10-phenanthroline)(8-hydroxyquinoline)] Zn(phen)q and investigated their electron transport properties. We used Zn(phen)q and $Alq_3$ for the conductive materials and measured their electron transport properties as a function of the organic layer thickness. The difference between Zn(phen)q and $Alq_3$ as electron transporting materials suggests that the electrical properties depends on the carrier injection.
Keywords
OLED; Zn Complex; Electron Transport Properties; Cyclic Voltammetry;
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