Journal of Electrical Engineering and Technology

The Korean Institute of Electrical Engineers (대한전기학회)
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Electron Transport Properties of Zn(phen)q Compared with Alq3 in OLED

  • Kim, Byoung-Sang (Dept. of Electrical Engineering & NTRC, Dong-A University) ;
  • Kim, Dong-Eun (Dept. of Electrical Engineering & NTRC, Dong-A University) ;
  • Choi, Gyu-Chae (Dept. of Electrical Engineering & NTRC, Dong-A University) ;
  • Park, Jun-Woo (Dept. of Electrical Engineering & NTRC, Dong-A University) ;
  • Lee, Burm-Jong (Dept. of Biomedicinal Chemistry, Inje University) ;
  • Kwon, Young-Soo (Dept. of Electrical Engineering & NTRC, Dong-A University)
  • Published : 2009.09.01
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Abstract

We synthesized new electroluminescence materials [(1,10-phenanthroline)(8-hydroxyquinoline)] Zn(phen)q and investigated their electron transport properties. We used Zn(phen)q and $Alq_3$ for the conductive materials and measured their electron transport properties as a function of the organic layer thickness. The difference between Zn(phen)q and $Alq_3$ as electron transporting materials suggests that the electrical properties depends on the carrier injection.

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