• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.8
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• pp.491-495
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• 2017

We investigated solution-processed indium-zinc oxide (IZO) thin-film transistors (TFTs) by inserting a 2-(4-biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole (PBD) buffer layer. This buffer layer efficiently tuned the energy level between the semiconducting oxide channel and metal electrode by increasing charge extraction, thereby enhancing the overall device performance: the IZO TFT with embedded PBD layer (thickness: 5 nm; width: $2,000{\mu}m$; length: $200{\mu}m$) exhibited a field-effect mobility of $1.31cm^2V^{-1}s^{-1}$, threshold voltage of 0.12 V, subthreshold swing of $0.87V\;decade^{-1}$, and on/off current ratio of $9.28{\times}10^5$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07b
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• pp.1046-1049
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• 2002

In this study, We fabricated Organic Electroluminescence device, in order to improve the efficiency of Blue OLED in the full-color OLED. We made two sample. Sample A is that We used TPD(N,N‘-bis(3-methylphenyl)-N,N'-diphenylbenzidine} as hole transport layer(HTL), and Butyl-PBD(2-(4-Biphenylyl)-5-(4-tert-butylphenyl)-1,3,4-oxadiazole) as emitting material layer(EML) and Alq3(8-Hydroxyquinoline, aluminum} as electron transport layer(ETL). Sample B is that we used TPD(N, N'-bis(3-methylphenyl)-N,N'-diphenylbenzidine} as HTL and co-evaporated Butyl-PBD and Alq3 as EML. We investigated the characteristic of brightness and current-:voltage. The sample B that co-evaporated Butyl-PBD and Alq3 as EML improved characteristic of brightness and current-voltage than sample A. Maximum luminescence of sample B is $310cd/m^2$ and threshold voltage is 7V.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.955-962
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• 2005

Power efficiency, lifetime and stable manufacturing processes are the crucial parameters for the success of organic light emitting diodes (OLEDs) in display and lighting applications. Highest power efficiencies of PIN-OLEDs for all principal colours and for bottom and top emission OLED structures have been demonstrated. The PIN structure, which means the incorporation of intentionally doped charge carrier transport layer in a suitable OLED layer setup, lowers the operating voltage to achieve highest power efficiencies. Up to now the n-doping of the electron transport layer has been done by alkali metal co-deposition. This has main draw-backs in terms of manufacturability, since the handling of large amounts of pure Cs is a basic issue in production lines. Here we present in detail results on PIN-OLEDs comprising a newly developed molecular n-dopant. All the previous OLED performance data based on PIN-OLEDs with alkali metal doping could be reproduced and will be further improved in the future. Hence, for the first time, a full manufacturing compatible PIN-OLED is available.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.11a
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• pp.598-602
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• 2004

Organic light entitling diode panel was fabricated using pulsed laser deposition (PLD) method Nd-YAG laser with Q-Switched and 355 nm pulse was used for the PLD. While TPD(N,N'-Di-[naphthaleny]-N, N'-diphenyl-benzidine) was used as a HTL(Hole transport layer), $Alq_3$(8-Hydroxyquinoline, Aluminum Salt) was used as EML/ETL(Emitting Layer/Electron Transport Layer) Organic pellet was fabricated and employed for the PLD method. The absorbances of the organic films were investigated and the measured absorbance values of TPD and $Alq_3$ films was 362 nm and 399 nm, respectively. The turn-on voltage of the OLED panel was 7.5 V and its luminance was $90\;cd/m^2$

• Journal of Information Display
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• v.8 no.2
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• pp.15-19
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• 2007

We have studied the effect of host materials on the electrophosphorescence properties by comparing three different host materials such as tris(8-hydroxyquinoline)-aluminum (III) $(Alq_3)$, bis(8-hydroxyquinoline)-zinc (II) $(Znq_2)$, and 4,4'-N,N' dicarbazole-biphenyl (CBP) doped with a red-emissive phosphorescent dye, 2,3,7,8,12,13,17,18-octaethyl-21H,23H-porphyrin platinum (II) (PtOEP). The EL spectra show a strong red emission (peak at 650 nm) from the triplet excited state of PtOEP and a very weak emission from an electron transport layer of $Alq_3$ and a hole transport layer of N,N'-diphenyl-N,N'-bis(3-methylphenyl)-1,1-biphenyl-4,4'-diamine (TPD). We find that the triplet exciton lifetime and the quantum efficiency decrease in the order of CBP, $Alq_3$, and $Znq_2$ host materials. The results are interpreted as a poor exciton confinement in $Alq_3$, and $Znq_2$ host compared with in CBP. Therefore, it is very important for the triplet-exciton confinement in the emissive layer for obtaining a high efficiency.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.308-311
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• 2000

The organic electroluminescene (EL) device has gathered much interested because of its potential in materials and simple device fabrication. We fabricated EL device which have a mixed single emitting layer containing N,N'-diphenyl-N,N'-(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine [TPD] and poly(3-hexylthiophene) [P3HT]. The molar ratio between P3HT and TPD chaged with 1:1, 3:1, 5:1, 3:2 and 5:2. EL intensity of ITO/P3HT+TPD/Mg:In devices is enhanced by addition of TPD into P3HT. This can be explained that the energy transfer occurs from TPD to P3HT. Recombination probability increases in emitting layer because that TPD as hole transport material plays a role more injection hole and Mg:In (3.7eV) electrode has low work function make easily electron injection. ITO/P3HT+TPD(5:2)/Mg:In devices emit orange-red light at 28V.

• Journal of the Korean Institute of Telematics and Electronics
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• v.27 no.4
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• pp.534-540
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• 1990

In this paper the characteristics of submicron gate GaAs MESFET's have been studied using a particle model which takes into account the hot-electron transport phenomena, i.e., the velocity overshoot. \ulcornervalley(<000> direction), L valley (<111>direction), X valley (<100>direction) as the GaAs conduction energy band and optical phonon, acoustic phonon, equivalent intervalley, nonequivalent intervalley scattering as the scattering models, have been considered in this simulation. And the GaAs material and the device simulation have been done by determination of the free flight time, scattering mechanism and scattering angle according to Monte-Carlo algorithm which makes use of a particle model. As a result of the particle simulation, firstly the electron distribution, the potential energy distribution and the situation of electron displacement in 0.6 \ulcorner gate length device have been obtained. Secondly, the cutoff frequency, obtained by this method, is k47GHz which is in good agreement with the calculated result of theory. And the current-voltage characteristics curve which takes account of the buffer layer effect has been obtained. Lastly it has been verified that parasitic current at the buffer layer can be analyzed using channel depth modulation.

• Journal of Korea Foundry Society
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• v.30 no.5
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• pp.179-186
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• 2010

To elucidate the effects of alloying elements on the characteristics of microstructure and high temperature oxidation of cast austenitic stainless steel, a thermodynamic calculation, a cyclic oxidation test, a X-ray diffraction, a scanning electron microscopy-back scattered electron, a electron probe microanalysis were conducted. The thermodynamic calculation for the effect of vanadium (V) addition on the formation of various precipitates leads to a decrease of chromium (Cr)-rich $M_{23}C_6$ carbides due to the formation of M (C, N) carbo-nitrides containing V and / or niobium (Nb). The V added alloy increased the resistance to high temperature oxidation due to a decrease of Cr-depleted zone deteriorating the oxidation resistance and due to the V-enriched oxide layer formed in inner oxide layer blocking the outward transport of cations.

• Bulletin of the Korean Chemical Society
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• v.7 no.2
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• pp.120-124
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• 1986

In order to investigate effective solar energy conversion system, the light-induced electron transfer reactions have been examined across single-lamellar liposomes incorporated organic photosensitizers such as anthracene and naphthalene derivatives. We have observed photosensitized reduction of methyl viologen (1,1'-dimethyl-4,4'-$bipyridinium^{2+}$) dissolved in the exterior aqueous phase of the pigmented phospholipid liposomes when EDTA, as electron donor, is dissolved in the enclosed aqueous phase of the liposomes. The anthroyl stearic acid incorporated in the hydrophobic bilayer of liposomes leads to much less quantum yield for the photosensitized reduction of $MV^{2+}$ than the anthracene carboxylate incorporated in the outer hydrophilic layer. However, ${\beta}$-carotene with anthroyl stearic acid incorporated into the bilayer enhances the quantum yield significantly (${\Phi}{\simeq}0.2-0.3$), preventing the reverse reaction of electron transfer ($MV^+_\ {\rightarrow}MV^{2+}$) so that it might be useful for solar energy conversion into chemical energy. A naphthalene derivative, octadecyl naphthylamine sulfonic acid incorporated into the outer layer of liposomes results in less efficiency of $MV^{2+}$ reduction than anthroyl stearic acid. These results have been also tested with respect to lipid components of liposomes.

• Current Optics and Photonics
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• v.4 no.4
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• pp.380-390
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• 2020

In this study, the traditional electron-blocking layer (EBL) in (In,Ga)N/GaN light-emitting diodes is replaced by a circular EBL that is the same size as the n-pad. The three-dimensional (3D) nonlinear Poisson, drift-diffusion, and continuity equations are adopted to simulate current transport in the LED and its characteristics. The results indicate that the local carrier-density distribution obtained for the circular EBL design is more uniform than that for the traditional EBL design. This improves the uniformity of local radiative recombination and local internal quantum efficiency (IQE) at high injection levels, which leads to a higher lumped IQE and lower efficiency droop. With the circular EBL, the lumped IQE is higher in the outer active region and lower in the active region under the n-pad. Since most emissions from the active region under the n-pad are absorbed by the n-pad, obviously, an LED with a circular EBL will have a higher external quantum efficiency (EQE). The results also show that this LED works at lower applied voltages.