• Title/Summary/Keyword: electron transition

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Metallorganic Chemical Vapor Deposition and Characterization of TiO2 Nanoparticles

  • Jung, Oh-Jin;Kim, Sam-Hyeok;Cheong, Kyung-Hoon;Li, W.;Saha, S. Ismat
    • Bulletin of the Korean Chemical Society
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    • v.24 no.1
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    • pp.49-54
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    • 2003
  • TiO₂nanoparticles were synthesized using the metallorganic chemical vapor deposition process. Particles with and without metal ion dopants were obtained. X-ray photoelectron and energy dispersive X-ray spectroscopic measurements confirmed the stoichiometry of the TiO₂nanoparticles. X-ray diffraction patterns showed a polycrystalline anatase structure of TiO₂. Transmission electron microscopy revealed that these particles are of nanoscale dimensions. Exact particle size and size distribution analyses were carried out by dynamic light scattering. The average particle size was determined to be 22 nm. The nanosize particles provided large surface area for photocatalysis and a large number of free surface-charge carriers, which are crucial for the enhancement of photocatalytic activity. To improve the photocatalytic activity, metal ions, including transition metal ions $(Pd^{2+},\;Pt^{4+},\;Fe^{3+})$ and lanthanide ion $(Nd^{3+})$ were added to pure TiO₂nanoparticles. The effects of dopants on photocatalytic kinetics were investigated by the degradation of 2-chlorophenol under an ultraviolet light source. The results showed that the TiO₂nanoparticles with the metal ion dopants have higher photocatalytic activity than undoped TiO₂. The $Nd^{3+}$ ion of these dopant metal ions showed the highest catalytic activity. The difference in the photocatalytic activity with different dopants is related to the different ionic radii of the dopants.

Effect of the Ag Additive on the ${Bi_{1.84}}{Pb_{0.34}}{Sr_{1.91}}{Ca_{2.03}}{Cu_{3.06}}{O_{10+\delta}}$(110K Phase) High-$T_{c}$ Susperconductor (${Bi_{1.84}}{Pb_{0.34}}{Sr_{1.91}}{Ca_{2.03}}{Cu_{3.06}}{O_{10+\delta}}$(110K 상) 산화물 고온초전도체에 미치는 Ag 혼합효과)

  • 이민수;최봉수;최봉수
    • Journal of the Korean Ceramic Society
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    • v.38 no.12
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    • pp.1104-1109
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    • 2001
  • Samples with the nominal composition, B $i_{1.84}$P $b_{0.34}$S $r_{1.91}$C $a_{2.03}$C $u_{3.06}$ $O_{10+}$$\delta$/ high $T_{c}$ superconductors containing As as an additive were fabricated by a solid-state reaction method. Samples with Ag of 10wt%, 30 wt% and 50 wt% each were sintered at 86$0^{\circ}C$~875$^{\circ}C$ for 24 hours. The structural characteristics, critical temperature and grain size with respect to Ag contents were analyzed by XRD(X-ray Diffraction) and SEM(Scanning Electron Microscope), respectively. As Ag contents increased, XRD peaks of g in Bi-2223 phase superconductors intensified and the proportion of the phase transition from Bi-2223 to Bi-2212 was increased.increased.

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Growth of α-Ga2O3 Epitaxial Films on Al2O3 by Halide Vapor Pressure Epitaxy

  • Lee, Daejang;Cha, An-Na;Park, Junseong;Noh, Hogyun;Moon, Youngboo;Ha, Jun-Seok
    • Journal of the Microelectronics and Packaging Society
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    • v.26 no.4
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    • pp.113-118
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    • 2019
  • In this study, we investigated the growth of single-crystallinity α-Ga2O3 thin films on c-plane sapphire substrates using halide vapor pressure epitaxy. We also found the optimal growth conditions to suppress the phase transition of α-Ga2O3. Our results confirmed that the growth temperature and partial pressure of the reactive gas greatly influenced the crystallinity. The optimal growth temperature range was about 460~510℃, and the α-Ga2O3 thin films with the highest crystallinity were obtained at a III/VI ratio of 4. The thickness and surface morphology of the thin films was observed by scanning electron microscopy. The film thickness was 6.938 ㎛, and the full width at half maximum of the ω-2θ scan rocking curve was as small as 178 arcsec. The optical band gap energy obtained was 5.21 eV, and the films were almost completely transparent in the near-ultraviolet and visible regions. The etch pit density was found to be as low as about 6.0 × 104 cm-2.

Polystyrene-b-poly(oligo(ethylene oxide) Monomethyl Ether Methacrylate)-b-polystyrene Triblock Copolymers as Potential Carriers for Hydrophobic Drugs

  • You, Qianqian;Chang, Haibo;Guo, Qipeng;Zhang, Yudong;Zhang, Puyu
    • Bulletin of the Korean Chemical Society
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    • v.34 no.2
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    • pp.558-564
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    • 2013
  • A simple and effective method is introduced to synthesize a series of polystyrene-b-poly(oligo(ethylene oxide) monomethyl ether methacrylate)-b-polystyrene (PSt-b-POEOMA-b-PSt) triblock copolymers. The structures of PSt-b-POEOMA-b-PSt copolymers were characterized by Fourier-transform infrared spectroscopy (FTIR) and nuclear magnetic resonance ($^1H$ NMR) spectroscopy. The molecular weight and molecular weight distribution of the copolymer were measured by gel permeation chromatography (GPC). Furthermore, the self-assembling and drug-loaded behaviours of three different ratios of PSt-b-POEOMA-b-PSt were studied. These copolymers could readily self-assemble into micelles in aqueous solution. The vitamin E-loaded copolymer micelles were produced by the dialysis method. The micelle size and core-shell structure of the block copolymer micelles and the drug-loaded micelles were confirmed by dynamic light scattering (DLS) and transmission electron microscopy (TEM). The thermal properties of the copolymer micelles before and after drug-loaded were investigated by different scanning calorimetry (DSC). The results show that the micelle size is slightly increased with increasing the content of hydrophobic segments and the micelles are still core-shell spherical structures after drug-loaded. Moreover, the glass transition temperature (Tg) of polystyrene is reduced after the drug loaded. The drug loading content (DLC) of the copolymer micelles is 70%-80% by ultraviolet (UV) photolithography analysis. These properties indicate the micelles self-assembled from PSt-b-POEOMA-b-PSt copolymers would have potential as carriers for the encapsulation of hydrophobic drugs.

Kinetic Studies on the Reaction of Benzyl m-Nitrobenzenesulfonate with N,N-Dimethylanilines (벤질 m-술폰산니트로벤젠과 N,N-디메틸아닐린類와의 反應에 關한 反應速度論的 硏究)

  • Yoh Soo-Dong;Lee Mu-Sang
    • Journal of the Korean Chemical Society
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    • v.23 no.1
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    • pp.37-41
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    • 1979
  • The kinetics of the reaction of benzyl m-nitrobenzenesulfonate with m-and p-substituted N,N-dimethylanilines in acetone have been investigated by an electric conductivity method. The effects of substituents on the reactivity of N,N-dimethylaniline and the existence of linear free energy relationship were discussed. The rate constants k were in the range 2.55∼487 $10^{-4}l{\cdot}mol^{-l}{\cdot}sec^{-1} (35^{\circ}C)$ and increased with the electron donating ability of substituents. In the present reaction, the Hammett plot was correlated with ${\sigma}$ substituent constant, especially using the new ${\sigma}$ value of 0.35 in p-MeO and it's ${\rho}$ value was found to be -1.37. r value for the reaction was very large than the value obtained in the reaction of benzyl bromide. $Br{\"{o}}nsted$ linear relationship was shown between rate constant and basicites except for p-MeO resulted from solvent effect. From the Bronsted plot, this reaction was suggested that the cleavage of the C${\cdot}{\cdot}{\cdot}$O bond in the $S_N2$ transition state proceed the bond formation.

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Modulation of Mitochondrial Membrane Potential and ROS Generation by Nicotinamide in a Manner Independent of SIRT1 and Mitophagy

  • Song, Seon Beom;Jang, So-Young;Kang, Hyun Tae;Wei, Bie;Jeoun, Un-woo;Yoon, Gye Soon;Hwang, Eun Seong
    • Molecules and Cells
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    • v.40 no.7
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    • pp.503-514
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    • 2017
  • Nicotinamide (NAM) plays essential roles in physiology through facilitating $NAD^+$ redox homeostasis. Importantly, at high doses, it protects cells under oxidative stresses, and has shown therapeutic effectiveness in a variety of disease conditions. In our previous studies, NAM lowered reactive oxygen species (ROS) levels and extended cellular life span in primary human cells. In the treated cells, levels of $NAD^+/NADH$ and SIRT1 activity increased, while mitochondrial content decreased through autophagy activation. The remaining mitochondria were marked with low superoxide levels and high membrane potentials (${\Delta}_{{\Psi}m}$); we posited that the treatment of NAM induced an activation of mitophagy that is selective for depolarized mitochondria, which produce high levels of ROS. However, evidence for the selective mitophagy that is mediated by SIRT1 has never been provided. This study sought to explain the mechanisms by which NAM lowers ROS levels and increases ${\Delta}_{{\Psi}m}$. Our results showed that NAM and SIRT1 activation exert quite different effects on mitochondrial physiology. Furthermore, the changes in ROS and ${\Delta}_{{\Psi}m}$ were not found to be mediated through autophagy or SIRT activation. Rather, NAM suppressed superoxide generation via a direct reduction of electron transport, and increased ${\Delta}_{{\Psi}m}$ via suppression of mitochondrial permeability transition pore formation. Our results dissected the effects of cellular $NAD^+$ redox modulation, and emphasized the importance of the $NAD^+/NADH$ ratio in the mitochondria as well as the cytosol in maintaining mitochondrial quality.

Synthesis and Characterization of Spherical SiO2@Y2O3 : Eu Core-Shell Composite Phosphors (구형 SiO2@Y2O3: Eu 코어-쉘 복합체 형광체 합성 및 특성)

  • Song, Woo-Seuk;Yang, Hee-Sun
    • Journal of the Korean Ceramic Society
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    • v.48 no.5
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    • pp.447-453
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    • 2011
  • The monodisperse spherical $SiO_2$ particles were overcoated with $Y_2O_3:Eu^{3+}$ phosphor layers via a Pechini sol-gel process and the resulting $SiO_2@Y_2O_3:Eu^{3+}$ core-shell phosphors were subsequently annealed at $800^{\circ}C$ at an ambient atmosphere. The crystallographic structure, morphology, and luminescent property of core-shell structured $SiO_2@Y_2O_3:Eu^{3+}$ phosphors were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), and photoluminescence (PL). The spherical, nonagglomerated $SiO_2$ particles prepared by a Stober method exhibited a relatively narrow size distribution in the range of 260-300 nm. The thickness of phosphor shell layer in the core-shell particles can be facilely controlled by varying the coating number of $Y_2O_3:Eu^{3+}$ phosphors. The core-shell structured $SiO_2@Y_2O_3:Eu^{3+}$ phosphors showed a strong red emission, which was dominated by the $^5D_0-^7F_2$ transition (610 nm) of $Eu^{3+}$ ion under the ultraviolet excitation (263 nm). The PL emission properties of $SiO_2@Y_2O_3:Eu^{3+}$ phosphors were also compared with pure $Y_2O_3:Eu^{3+}$ nanophosphors.

Thermoluminescence of Rb2LiCeCl6 Halide Scintillator (Rb2LiCeCl6 할라이드 섬광체의 열형광 특성)

  • Kim, Sunghwan
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.15 no.2
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    • pp.1211-1215
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    • 2014
  • We developed a new $Rb_2LiCeCl_6$ scintillator and determined the scintillation and thermoluminescence properties of the scintillator. The emission spectrum of $Rb_2LiCeCl$ is located in the range of 350 ~ 410 nm, peaking at 368 nm and 378 nm, due to the 4f ${\rightarrow}$ 5d transition of $Ce^{3+}$ ions. The fluorescence decay time of the crystal is composed two components. The fast component is 71 ns (85%) and the slow component is 405 ns (15%) of the crystal. The after-glow is caused by the electron and hole traps in the crystal lattice. We determined physical parameters of the traps in the crystal. The determined activation energy(E), kinetic order(m) and frequency factor(s) of the trap are 0.75 eV, 1.48 and $3.0{\times}10^8s^{-1}$, respectively.

Electrical, optical, and structural properties of IZTO films grown by co-sputtering method using ITO and IZO target (ITO와 IZO 타겟의 Co-sputtering 방법으로 성장시킨 IZTO 박막의 전기적 광학적 구조적 특성연구)

  • Jeong, Jin-A;Choi, Kwang-Hyuk;Moon, Jong-Min;Bae, Jung-Hyeok;Kim, Han-Ki
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.06a
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    • pp.379-380
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    • 2007
  • The characteristics of a co-sputtered indium zinc tin oxide (IZTO) films prepared by dual target dc magnetron sputtering from IZO and ITO targets at a room temperature are investigated. Film properties, such as sheet resistance, optical transmittance, surface work function and surface roughness were examined as a function of ITO dc power at constant IZO dc power of 100 W. It was shown that the increase of the ITO dc power during co-sputtering of ITO and IZO target resulted in an increase of sheet resistance of the IZTO films. This can be attributed to high resistivity of ITO film prepared at room temperature. Surface smoothness and roughness were investigated by Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The synchrotron x-ray scattering results obtained from IZTO film with different ITO contents showed that introduction of ITO atoms into amorphous IZO film resulted in a crystallization of IZTO film with (222) preferred orientation due to low alc transition temperature of ITO film. However, the transmittance of the IZTO films with thickness of 150 nm is between 80 and 85 % at wavelength of 550 nm regardless of ITO content. Possible mechanism to explain the ITO and IZO co-sputtering effect on properties of IZTO is suggested.

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Properties of SrSnO3:Tb3+ Green-Emitting Phosphor Thin Films Grown on Sapphire and Quartz Substrates (사파이어와 석영 기판 위에 성장된 SrSnO3:Tb3+ 녹색 형광체 박막의 특성)

  • Cho, Shinho
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.29 no.9
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    • pp.546-551
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    • 2016
  • $SrSnO_3:Tb^{3+}$ phosphor thin films were prepared on sapphire and quartz substrates in the growth temperature range of $100{\sim}400^{\circ}C$ by using the radio frequency magnetron sputtering deposition. The resulting $SrSnO_3:Tb^{3+}$ thin films were characterized by X-ray diffraction, scanning electron microscopy, ultraviolet-visible-infrared spectrophotometer, and photoluminescence spectrometer. The results indicated that the morphology, optical transmittance, band gap energy, and luminescence intensity of the phosphor thin films significantly depended on the growth temperature. All the thin films, regardless of the type of substrate, showed an amorphous behavior. As for the thin films deposited on sapphire substrate, the maximum crystallite size was obtained at a growth temperature of $400^{\circ}C$ and the strongest emission was green at 544 nm arising from the $^5D_4{\rightarrow}^7F_5$ transition of Tb3+. The average optical transmittance for all the thin films grown on sapphire and quartz substrates was decreased as the growth temperature increased from 100 to $400^{\circ}C$. The results suggest that the optimum growth temperatures for depositing highly-luminescent $SrSnO_3:Tb^{3+}$ phosphor thin films on sapphire and quartz substrates are 400 and $300^{\circ}C$, respectively.