• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.281.1-281.1
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• 2016

Transition metal dichalcogenides (TMDCs) are promising layered structure materials for next-generation nano electronic devices. Many investigation on the FET device using TMDCs channel material have been performed with some integrated approach. To use TMDCs for channel material of top-gate thin film transistor(TFT), the study on high-k dielectrics on TMDCs is necessary. However, uniform growth of atomic-layer-deposited high-k dielectric film on TMDCs is difficult, owing to the lack of dangling bonds and functional groups on TMDC's basal plane. We demonstrate the effect of remote oxygen plasma pretreatment of large area synthesized few-layer MoSe2 on the growth behavior of Al2O3, which were formed by atomic layer deposition (ALD) using tri-methylaluminum (TMA) metal precursors with water oxidant. We investigated uniformity of Al2O3 by Atomic force microscopy (AFM) and Scanning electron microscopy (SEM). Raman features of MoSe2 with remote plasma pretreatment time were obtained to confirm physical plasma damage. In addition, X-ray photoelectron spectroscopy (XPS) was measured to investigate the reaction between MoSe2 and oxygen atom after the remote O2 plasma pretreatment. Finally, we have uniform Al2O3 thin film on the MoSe2 by remote O2 plasma pretreatment before ALD. This study can provide interfacial engineering process to decrease the leakage current and to improve mobility of top-gate TFT much higher.

• Journal of the Korean Wood Science and Technology
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• v.46 no.2
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• pp.125-131
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• 2018

This study was conducted to understand and to compare the qualitative aspects of anatomical characteristics in compression wood (CW), lateral wood (LW), and opposite wood (OW) in a stem of Ginkgo biloba. The qualitative analysis was examined by optical microscopy and scanning electron microscopy. CW in Ginkgo biloba disks were dark brown in color, and the OW and LW were light brown in color. CW and OW showed abrupt transitions from earlywood to latewood, while LW showed a gradual transition. Cross sections of CW presented circular tracheids with angular outlines, many intercellular spaces, and varying sizes of lumens. Cross sections of LW and OW showed rectangular tracheids, fewer intercellular spaces, and varying sizes of lumens. In radial sections, CW showed an irregular arrangement of tracheids in earlywood, while LW and OW showed comparatively regular arrangements. Slit-like bordered pits on the tracheid cell wall, piceoid pits in the crossfield, and a few spiral checks were present in CW. LW and OW showed bordered pits with slightly oval-shaped apertures, as well as cuppresoid pits in the crossfields. Rays were primarily uniseriate, with few biseriate rays in the tangential sections of CW, LW, and OW. The tips of the tracheids were branched in CW but had a normal appearance in LW and OW.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.119-119
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• 2015

Ion beam sputtering has been widely used in Secondary Ion Mass Spectrometry (SIMS), X-ray Photoelectron Spectroscopy (XPS), and Auger Electron Spectroscopy (AES) for depth profile or surface cleaning. However, mainly due to severe matrix effects such as surface composition change from its original composition and damage of the surface generated by ion beam bombardment, conventional sputtering skills using mono-atomic primary ions with energy ranging from a few hundred to a thousand volts are not sufficient for the practical surface analysis of next-generation organic/inorganic device materials characterization. Therefore, minimization of the surface matrix effects caused by the ion beam sputtering is one of the key factors in surface analysis. In this work, the electronic structure of a $Ta_2O_5$ thin film on $SiO_2/Si$ (100) after Ar Gas Cluster Ion Beam (GCIB) sputtering was investigated using X-ray photoemission spectroscopy and compared with those obtained via mono-atomic Ar ion beam sputtering. The Ar ion sputtering had a great deal of influence on the electronic structure of the oxide thin film. Ar GCIB sputtering without sample rotation also affected the electronic structure of the oxide thin film. However, Ar GCIB sputtering during sample rotation did not exhibit any significant transition of the electronic structure of the $Ta_2O_5$ thin films. Our results showed that Ar GCIB can be useful for potential applications of oxide materials with sample rotation.

• Journal of Radiation Protection and Research
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• v.18 no.1
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• pp.53-61
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• 1993

The gamma-gamma coincidence measurements and angular correlation measurement associated with the electron capture of $^{75}Se$ have been carried to understand the structure for the odd nuclei $^{75}As$ with two HPGe detectors. As a result, we could determined the band structure of 5/2 state to be of 1/2 [310] band which is based on $f_{5/2}$ proton state. Also we obtained the multipole admixture in the state of 279.5keV by using the mixing ratios of $121.1{\sim}279.5keV$ cascade. Subsequently, it is determined that 25.56% electric quadrupole transition is involved in the state of 279.5keV.

• Applied Chemistry for Engineering
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• v.10 no.1
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• pp.148-153
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• 1999

In situ composites containing a thermotropic liquid crystalline polymer were prepared by polycondensation of 1,4-bis(p-hydroxy-benzoyloxy)butane with 2-bromoterephthaloyl chloride in a poly(methyl methacrylate) solution. Morphology and mechanical, thermal properties of the composites were examined by differential scanning calorimeter(DSC), dynamic mechanical thermal analyser(DMTA), optical microscope and scanning electron microscope(SEM). The TLCP domains showed nematic phase. The glass transition temperature($T_g$) and mechanical properties of the PMMA in the composites increased with increasing the content of TLCP. The TLCP domains were finely dispersed in the PMMA matrix. The 20 wt % TLCP/PMMA composite prepared by in situ polymerization showed more improved mechanical property with finely well dispersed morphology compared with that prepared by solution blending of the same composition.

• Korean Journal of Materials Research
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• v.22 no.3
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• pp.145-149
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• 2012

Red phosphors of $Gd_{1-x}Al_3(BO_3)_4:{Eu_x}^{3+}$ were synthesized by using the solid-state reaction method. The phase structure and morphology of the phosphors were measured using X-ray diffraction (XRD) and field emission-scanning electron microscopy (FE-SEM), respectively. The optical properties of $GdAl_3(BO_3)_4:Eu^{3+}$ phosphors with concentrations of $Eu^{3+}$ ions of 0, 0.05, 0.10, 0.15, and 0.20 mol were investigated at room temperature. The crystals were hexagonal with a rhombohedral lattice. The excitation spectra of all the phosphors, irrespective of the $Eu^{3+}$ concentrations, were composed of a broad band centered at 265 nm and a narrow band having peak at 274 nm. As for the emission spectra, the peak wavelength was 613 nm under a 274 nm ultraviolet excitation. The intensity ratio of the red emission transition ($^5D_0{\rightarrow}^7F_2$) to orange ($^5D_0{\rightarrow}^7F_1$) shows that the $Eu^{3+}$ ions occupy sites of no inversion symmetry in the host. In conclusion, the optimum doping concentration of $Eu^{3+}$ ions for preparing $GdAl_3(BO_3)_4:Eu^{3+}$ phosphors was found to be 0.15 mol.

• Polymer(Korea)
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• v.27 no.3
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• pp.183-188
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• 2003

The dielectric constants of fluorine-containing epoxy resins, 2-diglycidylether of benzotrifluoride(FER)/4,4'-diamino-diphenyl methane (DDM) and diglycidylether of bisphenol-A (DGEBA)/DDM systems were evaluated by dielectric spectrometer. Glass transition temperature and thermal stability factors, including initial decomposed temperature, temperatures of maximum rate of degradation, and decomposition activation energy of the cured specimens were investigated by dynamic mechanical analysis and thermogravimetric analysis. For the mechanical properties of the casting specimens, the fracture toughness, flexural, and impact tests were performed, and their fractured surfaces were examined by scanning electron microscope. The dielectric constant of FER/DDM system was lower than that of commercial DGEBA/DDM system, and the mechanical properties of the cured specimens showed higher values than those of DGEBA/DDM system. This was probably due to the introduction of trifluoromethyl (CF$_3$) group into the side chain of the epoxy resins, resulting in improving the electric and mechanical properties of the epoxy cure system studied.

• Proceedings of the KIEE Conference
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• 1992.07b
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• pp.816-819
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• 1992

Binary compound semiconductor InSb crystal which has direct-transition energy gap (0.17 ev) grown by vertical Bridgman method, then the electric-magnetic and optical properties of InSb crystal were surveyed. The growth rate of the crystals was 1mm/hr and the lattice constant $a_\circ$ of the grown crystal was 6.4863$\AA$. The electrical properties were examined by the Hall effect measurement with the van der Pauw method in the temperature range of 70$\sim$300K, magnetic field range of 500$\sim$10000 gauss. The undoped InSb crystal was n-type, the concentration and the electron mobility were 2$\sim$6 ${\times}$ $10^{16}$$\textrm{cm}^{-3}$ and carrier mobility was 6$\sim$2${\times}$$10^{4}$$cm^{2}$/v.sec at 300K, respectively. The carrier mobility was decreased with $T^{-1/2}$ due to the lattice scattering above 100K, and decreased by impurity scattering below100K. The magnetoresistance was increased 190% at 9000 gauss as compared with non-appliced magnetic field and the magnetoresistance was increased with increasing the magnetic field. Also, the Hall voltage was increased with increasing the magnetic field and decreasing the thickness of sample. The optical energy band gap of InSb at room temperature determined using the IR spectrometer was 0.167eV. The diffusion depth of Zn into InSb proportionally increased with the square root of diffusion time and the activation energy for Zn diffusion was 0.67eV. The temperature dependence of diffusion coefficient was $D=4.25{\times}10^{-3}$exp (-0.67/$K_BT$).

• Textile Coloration and Finishing
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• v.30 no.2
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• pp.98-106
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• 2018

In this study, graphene oxide(GO) was synthesized by using Hummer's method. Then, GO was used as a additive for epoxy resin nanocomposites that were prepared by mixing Tetraglycidyl diamino diphenyl methane(TGDDM) and hardner(MDEA+M-MIPA). Thermal and mechanical properties of epoxy resin nanocomposites were confirmed by analytical methods such as TG-DTA, DMA, fracture toughness, tensile strength, and flexural strength. The fracture surfaces of epoxy resin nanocomposites with different content of the GO were observed by a Scanning Electron Microscope(SEM). The mechanism for mechanical properties of epoxy resin nanocomposites was analyzed by modeling of nanocomposites with different GO weight. Due to the GO, both the heat resistance and the glass transition temperature of the epoxy resin nanocomposites were improved. Interestingly, when 0.1wt.% of GO was added to the epoxy resin/hardner mixture, the properties of mechanical increased compared with the neat epoxy resin. This results were caused by an aggregation between the GO.

• Advances in nano research
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• v.5 no.3
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• pp.193-201
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• 2017

ZnO, ZnO: Cu, Ga, and ZnO: Cu, Ga, Ag thin films were obtained by oxidization of ZnS and ZnS: Cu, Ga films deposited onto glass substrates by electron-beam evaporation from ZnS and ZnS: Cu, Ga targets and from ZnS: Cu, Ga film additionally doped with Ag by the closed space sublimation technique at atmospheric pressure. The film thickness was about $1{\mu}m$. The oxidation was carried out at $600-650^{\circ}C$ in air or in an atmosphere containing water vapor. Structural characteristics were investigated by X-ray diffraction (XRD) and atomic force microscopy (AFM). Photoluminescence (PL) spectra of the films were measured at 30-300 K using the excitation wavelengths of 337, 405 and 457.9 nm. As-deposited ZnS and ZnS: Cu, Ga films had cubic structure. The oxidation of the doped films in air or in water vapors led to complete ZnO phase transition. XRD and AFM studies showed that the grain sizes of oxidized films at wet annealing were larger than of the films after dry annealing. As-deposited doped and undoped ZnS thin films did not emit PL. Shape and intensity of the PL emission depended on doping and oxidation conditions. Emission intensity of the films annealed in water vapors was higher than of the films annealed in the air. PL of ZnO: Cu, Ga films excited by 337 nm wavelength exhibits UV (380 nm) and green emission (500 nm). PL spectra at 300 and 30 K excited by 457.9 and 405 nm wavelengths consisted of two bands - the green band at 500 nm and the red band at 650 nm. Location and intensities ratio depended on the preparation conditions.