• Bulletin of the Korean Chemical Society
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• 제34권7호
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• pp.2171-2175
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• 2013

The electronic structure and elastic properties of the 4d transition metal carbides MC (M = Y, Zr, Nb, Rh) were studied by means of extended H$\ddot{u}$ckel tight-binding band electronic structure calculations. As the valence electron population of M increases, the bulk modulus of the MC compounds in the rocksalt structure does not increase monotonically. The dominant covalent bonding in these compounds is found to be M-C bonding, which mainly arises from the interaction between M 4d and C 2p orbitals. The bonding characteristics between M and C atoms affecting the variation of the bulk modulus can be understood on the basis of their electronic structure. The increasing bulk modulus from YC to NbC is associated with stronger interactions between M 4d and C 2p orbitals and the successive filling of M 4d-C 2p bonding states. The decreased bulk modulus for RhC is related to the partial occupation of Rh-C antibonding states.

• 전기학회논문지
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• 제62권5호
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• pp.649-656
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• 2013

A conventional epoxy-microsilica composite (EMC) and an epoxy-microsilica-nanosilicate composite (EMNC) were prepared in order to apply them to mold-type transformers, current transformers (CT) and potential transformers (PT). Nanosilicate was exfoliated in a epoxy resin using our electric field dispersion process and AC insulation breakdown strength at $30{\sim}150^{\circ}C$, glass transition temperature and viscoelasticity were studied. AC insulation breakdown strength of EMNC was higher than that of EMC and that value of EMNC was far higher at high temperature. Glass transition temperature and viscoelasticity property of EMNC was higher than those of EMC at high temperature. These results was due to the even dispersion of nanosilicates among the nanosilicas, which could be observed using transmission electron microscopy (TEM). That is, the nanosilicates interrupt the electron transfer and restrict the mobility of the epoxy chains.

• 전기전자학회논문지
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• 제22권2호
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• pp.446-454
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• 2018

In this work, we summarize the calculation processes of obtaining a scattering factor using with the equilibrium average projection scheme (EAPS), with moderately weak coupling (MWC) interaction, and obtain the line-shape formula of an electron-deformation phonon interacting system interested in the confinement of electrons by squarwell confinement potentials in quantum two dimensional system.. Through the numerical analysis, we analysis the magnetic dependence of absorption power, P(B) in several temperature and frequency difference dependence of absorption power $P({\Delta}{\omega})$, in several external field, where ${\Delta}{\omega}={\omega}-{\omega}_0$ and ${\omega}({\omega}_0)$ is the angular frequency (the cyclotron resonance frequency). The result of equilibrium average projection scheme (EAPS) in SER-MWC explains the properties of quantum transition quite well.

• 동력기계공학회지
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• 제17권5호
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• pp.44-51
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• 2013

This paper proposes and analyzes recycling of optical phonons emitted by nonradiative decay, which is a major thermal management concern for high-power light emitting diodes (LED), by introducing an integrated, heterogeneous barrier cooling layer. The cooling is proportional to the number of phonons absorbed per electron overcoming the potential barrier, while the multi-phonon absorption rate is inversely proportional to this number. We address the theoretical treatment of photon-electron-phonon interaction/transport kinetics for optimal number of phonons (i.e., barrier height). We consider a GaN/InGaN LED with a metal/AlGaAs/GaAs/metal potential barrier and discuss the energy conversion rates. We find that significant amount of heat can be recycled by the barrier transition cooling layer.

• Applied Microscopy
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• 제50권
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• pp.27.1-27.6
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• 2020

Transition metal dichalcogenides (TMD), which is composed of a transition metal atom and chalcogen ion atoms, usually form vacancies based on the knock-on threshold of each atom. In particular, when electron beam is irradiated on a monolayer TMD such as MoS₂ and WS₂, S vacancies are formed preferentially, and they are aligned linearly to constitute line defects. And then, a hole is formed at the point where the successively formed line defects collide, and metal clusters are also formed at the edge of the hole. This study reports a process in which the line defects formed in a monolayer WS₂ sheet expends into holes. Here, the process in which the W cluster, which always occurs at the edge of the formed hole, goes through a uniform intermediate phase is explained based on the line defects and the formation behavior of the hole. Further investigation confirms the atomic structure of the intermediate phase using annular dark field scanning transition electron microscopy (ADF-STEM) and image simulation.

• Applied Microscopy
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• 제45권4호
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• pp.225-229
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• 2015

Transition metal dichalcogenides (TMDs) are a class of two-dimensional (2D) materials that have attracted growing interest because of their promising applications. The properties of TMDs strongly depend on the crystalline structure and the number and stacking sequence of layers in their crystals and thin films. Though electrical, mechanical, and magnetic studies of 2D materials are being conducted, there is an evident lack of direct atom-by-atom visualization, limiting insight on these highly exciting material systems. Herein, we present our recent studies on the characterization of 2D layered materials by means of aberration corrected scanning transmission electron microscopy (STEM), in particular via high angle annular dark field (HAADF) imaging. We have identified the atomic arrangements and defects in 2H stacked TMDs, 1T stacked TMDs, distorted 1T stacked TMDs, and vertically integrated heterojunctions of 2D TMDs crystals.

• Bulletin of the Korean Chemical Society
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• 제27권11호
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• pp.1752-1756
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• 2006

This study explores and interprets in a new way the complex solvent and the temperature dependence of the NMR shifts for the N-$CH_2$ protons in tris(N,N-diethyldithiocarbamato) iron(III) in acetone, benzene, carbon disulfide, chloroform, dimethylformamide and pyridine. The NMR shifts are interpreted in terms of the Fermi contact interaction and the dipolar term from the multipole expansion of the interaction of the electron orbital angular momentum and the electron spin dipolar-nuclear spin angular momentum. This analysis yields a direct measure of the effect of the solvent system on the environment of the transition metal ion. The results are analysed in terms of the crystal field environment of the transition metal ion with contributions from (a) the dithiocarbamate ligand (b) the solvent molecules and (c) the interaction of the effective dipole moment of the polar solvent molecule with the transition metal ion complex.

• Plant Biotechnology Reports
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• 제4권2호
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• pp.149-155
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• 2010

Expression of the genes for carotenoid bio-synthesis (crt) is dependent on light, but little is known about the underlying mechanism of light sensing and signalling in the cyanobacterium Synechocystis sp. PCC 6803 (hereafter, Synechocystis). In the present study, we investigated the light-induced increase in the transcript levels of Synechocystis crt genes, including phytoene synthase (crtB), phytoene desaturase (crtP), ${\zeta}$-carotene desaturase (crtQ), and ${\beta}$-carotene hydroxylase (crtR), during a darkto-light transition period. During the dark-to-light shift, the increase in the crt transcript levels was not affected by mutations in cyanobacterial photoreceptors, such as phytochromes (cph1, cph2 and cph3) and a cryptochrome-type photoreceptor (ccry), or respiratory electron transport components NDH and Cyd/CtaI. However, treatment with photosynthetic electron transport inhibitors significantly diminished the accumulation of crt gene transcripts. Therefore, the light induction of the Synechocystis crt gene expression is most likely mediated by photosynthetic electron transport rather than by cyanobacterial photoreceptors during the dark-to-light transition.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2002년도 제23회 학술발표회 초록집
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• pp.198-198
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• 2002

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제42회 동계 정기 학술대회 초록집
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• pp.572-572
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• 2012

Growth of metal oxides on graphene may lead to a better understanding of delicate effects of their growth habits on their underlying physics. The vanadium dioxide ($VO_2$) is well known for its metal-to-insulator transition accompanied by a reversible first order structural phase transition at 340 K. This transition makes $VO_2$ a potentially useful material for applications in electrical and optical devices. We report a successful growth of $VO_2$ nanostructures on a graphene substrate via a vapor-solid transport route. As-grown $VO_2$ nanostructures on graphene were systematically characterized by field emission scanning electron microscopy, x-ray diffraction, Raman spectroscopy, FT-IR spectroscopy and high resolution transmission electron microscopy. These results indicate that the strain between $VO_2$ and graphene layers may be easily controlled by the number of underlying graphene layer. We also found that the strain in-between $VO_2$ and graphene layer affected its metal-to-insulator transition characteristics. This study demonstrates a new way for synthesizing $VO_2$ in a desired phase on the transparent conducting graphene substrate and an easy pathway for controlling metal-to-insulator phase transition via strain.