• Environmental Analysis Health and Toxicology
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• v.17 no.2
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• pp.117-123
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• 2002

A gas chromatographic method for the determination of airborne formaldehyde was established. In order to be highly detectable with the electron capture detector, formaldehyde was derivatized to its pentafluorobenzyl oxime form by reacting with O- (2,3,4,5,6- pentafluorobenzyl)hydroxylamine hydrochloride (PFBHA) at pH of 4.6 and temperature of 50$^{\circ}C$ for 1 hour. Air samples were collected into a Tedlar$\^$(R)/ bag followed by transferring into water contained in two impingers in series. Collection efficiency in the front trap was higher than 90％. Measurement of selected indoor and outdoor air samples showed higher formaldehyde concentrations in indoor air environments and the importance of ventilation for reducing indoor pollution.

• Proceedings of the KWS Conference
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• 2005.11a
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• pp.168-170
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• 2005

Nickel base brazes containing boron and silicon as melting point depressants are used extensively in the joining and repair of hot-section components in next generation nuclear reactor and aero-engine. Therefore, the present study has investigated the preliminary applicability of nickel based alloying nano powders. Nano Ni-based alloying powders synthesized by Pulsed Wire Evaporation (PWE) method. It's powder morphology and phase transformation temperature were analyzed by scanning electron microscopy, transmission electron microscopy, and differential scanning calorimeter(DSC). The powder particle size was approximately 10${\sim}$100nm and exhibits a quite even equiaxed shape. The results of DSC measurement show that both the nano Inconel 625 nano powder and Inconel 718 nano powder presents similar liquidus temperatures approximately $1373^{\circ}C$ and $1380^{\circ}C$ respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.9
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• pp.700-706
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• 2001

In this paper, I have fabricated and measured the gallium nitride(GaN) based Schottky diodes, and have carried out analyses of degradation of Schottky barrier characteristics. To improve of degraded Schottky barrier characteristics, I have carried out several experiments such as N$_2$ plasma exposure, annealing in N$_2$ ambient and annealing after N$_2$ plasma exposure. In the results of these experiments, I have achieved that only annealing in N$_2$ ambient is enough to improve the Schottky barrier characteristics, are temperature of 700$\^{C}$ and time of 90 sec in N$_2$ ambient furnace. for the analysis of these experiments, I have carried out the measurement of electric characteristics and quantitative analysis of etching damage using AES(Aguger Electron Spectroscopy).

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.11
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• pp.916-921
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• 2012

This research measured the dielectric properties of silicone rubber with various hardness in 100 Hz~3 MHz, $30{\sim}170^{\circ}C$ conditions. When the hardness increases from 65 degree to 75 degree, the dielectric loss increased within frequency range of 100 kHz~3 MHz and was a little change in dielectric loss within temperature range of $90^{\circ}C{\sim}170^{\circ}C$. Thermogravimetric Analysis (TGA) showed the weight change rate increased a little while heated until $800^{\circ}C$. Scanning Electron Microscope (SEM) measurement showed that Aluminium Trihydroxide($AlOH_3$) which acts as a reinforcement agent reduced the size of the particles as the hardness increased.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.465-465
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• 2010

Cut off probe, the efficient method, can measure the plasma parameters like the plasma electron density and the electron temperature. Plasma potential is also one of the important parameters in plasma processing but cannot be measured by cut off probe yet. Thus we developed method to measure plasma potential by focusing on relation between bias on a tip and sheath around tip. The system consist of a ICP(Inductive Coupled Plasma) source, a Network analyzer and a bias tee that can be bridge apply DC voltage on the cut off probe tip. Plasma potential is identified by using this system. The results corresponded well with the measured results by single langmuir probe(SLP).

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.834-838
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• 1996

The diagnosis of the plasma in the facing targets sputtering system was performed in mixture gas of Ar 0.18-0.0 Pa, Xe 0.0-0.18 Pa and $O_2$ 0.02 Pa by using Langmiur's probe and the effect of plasma-damage to surface smoothness and magnetic characteristics of Ba ferrite films was clarified. The electron density $N_e$ and the electron temperature $T_e$ were evaluated at the center of the plasma and at the neighborhood of the anode ring. $T_e$ decreased and $N_e$ increased with increase of $P_{Xe}$ at the center of plasma. For the measurement at the neighborhood of the anode ring, $T_e$ was almost constant and $N_e$ took the minimum value at $P_{Xe}$ of 0.1 Pa, where Ba ferrite films with excellent c-axis orientation and magnetic characteristics were obtained. It was suggested that the restriction of the bombardment of recoiled particles as well as the suppress of plasma-damage were effective for obtaining good surface smoothness and excellent magnetic characteristics and it was useful for decreasing the crystallization temperature of Ba ferrite films.

• Nuclear Engineering and Technology
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• v.52 no.10
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• pp.2299-2305
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• 2020

Zr alloy specimens were coated with Cr-Al alloy to enhance their resistance to oxidation. The coated samples were oxidized at 1200 ℃ in a steam environment for 300 s and showed extremely low oxidation when compared to uncoated Zr alloy specimens. The microstructure and elemental distribution of the oxides formed on the surface of Cr-Al alloys have been investigated by transmission electron microscopy (TEM) and X-ray photoelectron spectroscopy (XPS). A very thin protective layer of Cr₂O₃ formed on the outer surface of the Cr-Al alloy, and a thin Al₂O₃ layer was also observed in the Cr-Al alloy matrix, near the surface. Our results suggest that these two oxide layers near the surface confers excellent oxidation resistance to the Cr-Al alloy. Even after exposure to a high temperature of 1200 ℃, inter-diffusion between the Cr-Al alloy and the Zr alloy occurred in very few regions near the interface. Analysis of the inter-diffusion layer by high-resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS) measurement confirmed its identity as Cr₂Zr.

• Progress in Superconductivity and Cryogenics
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• v.26 no.1
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• pp.14-19
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• 2024

In this study, we explore the anisotropy of electron-phonon coupling (EPC) constant in epitaxially grown MgB₂ films on c-axis oriented Al₂O₃, examining its correlation with the critical temperature (T_c) and local structural disorder assessed through polarized Raman scattering. Analysis of the polarized Raman spectra reveals angle-dependent variations in the intensity of the phonon spectra. The Raman active mode originating from the boron plane, along with two additional phonon modes from the phonon density of states (PDOS) induced by lattice distortion, was distinctly observed. Persistent impurity scattering, likely attributed to oxygen diffusion, was noted at consistent frequencies across all measurement angles. The EPC values derived from the primary Raman active phonon do not significantly vary with changing observation angles, followed by that the T_c values calculated using the Allen and Dynes formula remain relatively constant across all polarization angles. Although the E_2g phonon mode plays a crucial role in the EPC mechanism, the determination of T_c values in MgB₂ involves not only electron-E_2g coupling but also contributions from other phonon modes.

• Applied Science and Convergence Technology
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• v.26 no.5
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• pp.118-128
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• 2017

The scope of this work is to determine and compare the effect of electron temperature ($T_e$) and number density ($N_e$) on the yield rate and concentration of reactive chemical species ($^{\bullet}OH$, $H_2O_2$ and $O_3$) in an argon, air and oxygen injected negative DC (0-4 kV) capillary discharge with water flow(0.1 L/min). The discharge was created between tungsten pin-to pin electrodes (${\Phi}=0.5mm$) separated by a variable distance (1-2 mm) in a quartz capillary tube (2 mm inner diameter, 4 mm outer diameter), with various gas injection rates (100-800 sccm). Optical emission spectroscopy (OES) of the hydrogen Balmer lines was carried out to investigate the line shapes and intensities as functions of the discharge parameters such as the type of gas, gas injection rate and inter electrode gap distances. The intensity ratio method was used to calculate $T_e$ and Stark broadening of Balmer ${\beta}$ lines was adopted to determine $N_e$. The effects of $T_e$ and $N_e$ on the reactive chemical species formation were evaluated and presented. The enhancement in yield rate of reactive chemical species was revealed at the higher electron temperature, higher gas injection rates, higher discharge power and larger inter-electrode gap. The discharge with oxygen injection was the most effective one for increasing the reactive chemical species concentration. The formation of reactive chemical species was shown more directly related to $T_e$ than $N_e$ in a flowing water gas injected negative DC capillary discharge.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.6
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• pp.34-40
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• 1985

Characteristics of GaAE epilayers grown on (100) CaAs wa(tors by molecular beam epitaxy (MBE) under various single crystal growing conditions were investigated. In fabrica-ting GaAs, epilayer by MBE, the most important factors are a substrate temperature(ts) and a flux density ratio (As/Ga). In this experiment, the substrate temperature was varied in the range of 48$0^{\circ}C$ to $650^{\circ}C$ and As and Ga cell temperatures were varied in the range of 218$^{\circ}C$ to 256$^{\circ}C$ and 876$^{\circ}C$ to 98$0^{\circ}C$, respectively. At the substrate temperature of 54$0^{\circ}C$, As cell temperature of 23$0^{\circ}C$, and Ga cell temperature of 91$0^{\circ}C$, the As/Ga ratio was 5"10, the surface morphology was most smooth . Investigation of As-stabilized surface by RHEED and of depth profile by SIM5 showed that As is less stable than Ga. Also, X-ray diffraction measurement revealed that single crystals of (400) and (200) were formed at the both sub-strate temperatures of 52$0^{\circ}C$ and 54$0^{\circ}C$.TEX>.