• 제목/요약/키워드: electron gun

검색결과 322건 처리시간 0.029초

SEM을 이용한 미세 접합 시스템 개발 (A Development of SEM Applied Microjoining System)

  • 황일한;나석주
    • Journal of Welding and Joining
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    • 제21권4호
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    • pp.63-68
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    • 2003
  • Scanning electron microscopy (SEM) has been used as a surface measurement instrument and a tool for lithography in semiconductor process due to its high density localized beam. For those purposes, however, the maximum current of SEM Is less than 100pA, which is not enough fo material processing. In this paper SEM was modified to increase the amount of current reaching a specimen from gun part where current is generated, the possibility of applying SEM to material processing, especially microjoining, was investigated. The maximum current of SEM after modifications was measured up to 10$\mu$A, which is about 10$^{5}$ times greater than before modifications. Through experiments such as eutectic solder wetting on thin 304 stainless steel foil and microjoining of 10$\mu$m thick 304 stainless steel, the intensity of electron beam of SEM proved to be great enough fur material processing as heat source. And a tight jig system was found necessary to hold materials close enough fur successful microloining.

AC-PDP의 방전지연 시간과 오방전 특성의 관계 (The Relationship Between the Lag Time of the Discharge and the Characteristics of Mis-Discharge in an AC-PDP)

  • 신재화;김근수
    • 한국전기전자재료학회논문지
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    • 제28권3호
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    • pp.149-153
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    • 2015
  • As the temperature of the panel increases in AC-PDPs, the minimum driving voltage increases. Also, as the more the number of discharge increases in cells, the probability of the strong dark discharge in the reset period increases. In this study, we investigated the relationship between the lag time of the discharge and the mechanism of mis-discharges which are the black noise and bright noise. We conclude that the variation of time lag characterizes the properties of exo-electron emission from MgO. Thus, we found that the main factor of the mis-discharges is the rate of change of the electron emission ability from the MgO surface.

Thermal Evaporation법으로 제작한 ZnO 나노선의 온도와 산소유량에 따른 성장 특성 (Characteristics of ZnO Nanowire Fabricated by Thermal Evaporation Method Depending on Different Temperatures and Oxygen Pressure)

  • 오원석;장건익
    • 한국전기전자재료학회논문지
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    • 제21권8호
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    • pp.766-769
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    • 2008
  • Zinc oxide (ZnO) nanowires were prepared on Si substrates by a thermal evaporation method at different temperatures and $O_2$ pressure. Microstructural analysis of the obtained ZnO nanowires was performed by using transmission electron microscopy(TEM) and scanning electron microscopy(SEM). Phase analysis was done using X-ray diffraction(XRD). As the deposition temperature and oxygen pressure were increased, the diameter and length of ZnO nanowires had a tendency to increase. Based on TEM and XRD analyses, the nanowires are single crystalline in nature and consist of a single phase. According to the measurements, the ZnO nanowires grown at 1100$^{\circ}C$, Ar 50 sccm, $O_2$ 10 sccm have good properties.

저 에너지 전자 회절 장치의 제작에 관한 연구 (The study on low energy electron diffraction (LEED) apparatus)

  • 권순남;이재경;이충만;정광호
    • 한국진공학회지
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    • 제6권3호
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    • pp.177-180
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    • 1997
  • Angle Resolved Ultraviolet Photoemission Spectroscopy(ARUPS) 연구를 위한 표면 구조 확인과 표면 방향 결정을 위한 LEED를 제작하여 그 성능을 조사하였다. 컴퓨터 시뮬 레이션을 이용하여 제작에 필요한 요인들을 최적의 값으로 결정하였다. 제작된 LEED는 3Grid방식을 채택하였고 시료와 스크린 사이의 거리를 75mm, 투영 각도를 $80^{\circ}$로 하였다. 전자총은 TVgun을 사용하였고 이 Gun의 특성을 조사하였다. 완성된 LEED의 성능조사를 위하여 Si(001), $Al_2O_3$(0001)표면의 pattern을 분석하였다.

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Effects of pore structures on electrochemical behaviors of polyacrylonitrile-based activated carbon nanofibers by carbon dioxide activation

  • Lee, Hye-Min;Kim, Hong-Gun;An, Kay-Hyeok;Kim, Byung-Joo
    • Carbon letters
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    • 제15권1호
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    • pp.71-76
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    • 2014
  • Activated carbon nanofibers (ACNF) were prepared from polyacrylonitrile (PAN)-based nanofibers using $CO_2$ activation methods with varying activation process times. The surface and structural characteristics of the ACNF were observed by scanning electron microscopy and X-ray diffraction, respectively. $N_2$ adsorption isotherm characteristics at 77 K were confirmed by Brunauer-Emmett-Teller and Dubinin-Radushkevich equations. As experimental results, many holes or cavernous structures were found on the fiber surfaces after the $CO_2$ activation as confirmed by scanning electron microscopy analysis. Specific surface areas and pore volumes of the prepared ACNFs were enhanced within a range of 10 to 30 min of activation times. Performance of the porous PAN-based nanofibers as an electrode for electrical double layer capacitors was evaluated in terms of the activation conditions.

대현광산 견운모의 생성과정과 화학조성 및 폴리타잎 (Mineralogical Study of Sericite in the Daehyun Mine: Formation, Chemistry and Polytype)

  • 이병임;김수진
    • 한국광물학회지
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    • 제11권2호
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    • pp.69-84
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    • 1998
  • The Daehyun sericite deposit in socheon-myun, Bongwha-gun, Kyungsangbuk-do, Korea, has been formed by the hydrothermal alteration of the Hongjesa granite of Precambrian age, leaving the muscovite granite between ore body and the Hongjesa granite as the wall rock alteration zone. The process of sericitization of granitic rock as well as chemistry and structures of sericites were studied using polarizing microscope, X-ray diffractometer (XRD), electron probe microanalyzer (EPMA) and high resolution transmission electron microscope (HRTEM). There are two genetic types of sericites having different chemistry and structure. The early sericite is of 2M1 polytype and has octahedral composition close to muscovite. It has been formed from the primary muscovite, tourmaline and quartz under a relatively high temperature. The late sericite is of 1M, 2M1 and 3T polytypes and has phengitic composition. It has been formed form feldspar, biotite, muscovite and tourmaline under a relatively low temperature. Chemical analyses show t, the early sericite has less Mg+FeT content and lower Si/AlIV ratio in tetrahedral site than the late sericite.

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Vacuum system for PAL-XFEL

  • 나동현;하태균;박종도
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.110.2-110.2
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    • 2016
  • 4세대 방사광가속기는 0.1nm급 X-선 자유전자레이저(X-ray Free Electron Laser : XFEL) 광원을 빔라인 사용자들에게 제공하기 위하여 2011년 건설을 시작하였고, 2015년부터 장치를 설치하기 시작했으며 현재 건설 완료단계에 이르러 있다. 이 장치에서 진공시스템은 10-11 mbar의 초고진공이 요구되는 전자빔 발생장치인 RF Gun을 포함하는 입사장치구간(Injector)과 전체길이 800 m에 이르는 전자빔을 가속시키는 선형가속기구간(Linac) 그리고 결맞음 방사광을 발생시키는 언듈레이터구간으로 나눌 수 있다. 본 논문에서는 각 구간별 진공시스템에 대한 건설 현황에 대하여 보고하고자 한다.

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혼합 전도체 $\beta-LiAl$의 전자구조, 결합과 Li 이온 이동에 따른 영향 (Electronic Structure, Bonding and Kithium Migration Effects of the Mixed Conductor $\beta-LiAl$)

  • Jang, Gun-Eik;I.M Curelaru
    • 한국진공학회지
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    • 제5권3호
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    • pp.194-198
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    • 1996
  • Detailed expermental studies of theelectronic structure of the valence and conduction bands of the mixed conductor $\beta$-LiAlindicate that a quasi-gap opens at the Fermi level, and the conduction states are highlylocalized, as opposed to the theoretical band structure calculations that predict predominant metallic behavior. Evidence for complex lithium migration effects involving the surface of Lial , induced by particle (electron or ion) bombardment and mechanical treatment , has been obtained as a byproduct of these experiments.

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OLED Analog Behavioral Modeling Based on Physics

  • Lee, Sang-Gun;Hattori, Reiji
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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    • pp.431-434
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    • 2008
  • The physical OLED analog behavioral model for SPICE simulation has been described using Verilog-A language. The model is based on the carrier-balance between the hole and electron injected through Schottky barrier at anode and cathode. The accuracy of this model was examined by comparing with the results from device simulation.

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광역평탄화에 따른 투명전도박막의 표면특성 (Surface Properties of ITO Thin Film by Planarization)

  • 최권우;이우선;서용진
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
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    • pp.95-96
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    • 2006
  • ITO thin film is generally fabricated by various methods such as spray, CVD, evaporation, electron gun deposition, direct current electroplating, high frequency sputtering, and reactive DC sputtering. However, some problems such as peaks, bumps, large particles, and pin-holes on the surface of ITO thin film were reported, which caused the destruction of color quality, the reduction of device life time, and short-circuit. Chemical mechanical polishing (CMP) process is one of the suitable solutions which could solve the problems.

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