• Journal of the Korea Academia-Industrial cooperation Society
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• v.12 no.4
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• pp.1803-1811
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• 2011

We have analyzed the electrical defect detection mechanism using low energy microcolumn on the TFT substrate for TFT-LCD. In this study, we have acquired the SEM images of the various pixel defects for 7-inch TFT substrate by scanning of low energy electron beam in the high vacuum chamber. Futhermore, we have interpreted the defect detection mechanism through the correlations between the SEM images and electrical behaviors of the defective pixels. As a result, we obtained consistent results as the follows. We can confirm that the SEM images using low energy electron beam are significantly affected by the space charge effect.

• 전자공학회논문지 IE
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• v.47 no.2
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• pp.8-12
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• 2010

TEM is a powerful tool for semiconductor material analyses in structure or biological sample in micro structure. TEM observation need to make to coincide specimens for special purpose. in this paper, we have experimented for minimum surface damage on bulk wafer and patterned specimen by various conditions such as accelerating energy, depth of ion beam, ion milling types, and etc. in various specimen preparation methods by FIB (Focus Ion Beam). The optimal qualified specimens are contain low mounts of surface damage(about 5 nm) on patterned specimen.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.12 s.177
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• pp.124-130
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• 2005

The research on surface modification technology has been advanced to improve the properties of engineering materials. ion implantation is a novel surface modification technology to enhance the mechanical, chemical and electrical properties of substrate's surface using accelerated ions. In this research, nitrogen ions were implanted into aluminum substrates which would be used for mold of rubber materials. The composition of nitrogen ion implanted aluminum alloy and nitrogen ion distribution profile were analyzed by Auger Electron Spectroscopy (AES). To analyze the modified surface, properties such as hardness, friction coefficient, wear resistance, contact angle, and surface roughness were measured. Hardness of ion implanted specimens was higher than that of untreated specimens. Friction coefficient was reduced, and wear resistance was improved. From the experimental results, it can be expected that ion implantation of nitrogen enhances the surface properties of aluminum mold.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.58 no.6
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• pp.1157-1165
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• 2009

In AC-PDP, it is necessary to achieve high luminance efficiency, high luminance and high definition by adopting technologies such as high xenon concentration, MgO doping, and long gap. However, it is very difficult to apply above technologies because they make the driving voltage margin reduced. Especially, high Xe concentration technology for high efficacy makes not only the driving voltage margin reduced but also the stability of reset discharge decreased at low temperature. In this paper, we studied temperature and voltage dependent stability of reset discharge and present the experimental results of the discharge characteristics at low temperature. In addition, we suggested the mechanism of bright noise and black noise at low temperature. Finally, we proposed double reset waveform to improve the bright noise and descending scan time method to improve the black noise.

• 한국정보디스플레이학회:학술대회논문집
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• 2007.08b
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• pp.1403-1406
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• 2007

An effective WOLED structure was demonstrated which improved a luminous efficiency and white color chromaticity independent on applied bias by employing effective carrier transporting layer, without any alteration of emissive materials. The modified WOLEDs exhibited 2 times higher luminous efficiency than the control device and showed balanced white emission during an operation.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.50 no.8
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• pp.414-418
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• 2001

Failure modes of Mo-tip FEA were investigated in detail as a preliminary study for the application of Mo-tip FEA to the CRT electron-gun as a cold cathode. It was identified that the destruction of Mo-tip FEA was originated from reflowing of arc-current during the spot-knocking process followed by secondary arc between gate electrode and cathode substrate. In order to prevent Mo-tip FEA from destruction due to arc-current, two kinds of methods were suggested, that is one is to provide the by-pass of the reflow current and the other is to install a current limiter in the path of gate connection line.

• Korean Journal of Soil Science and Fertilizer
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• v.6 no.1
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• pp.33-34
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• 1973

Jeondanto which is known a edible earth material in the legend of local people on the Mt. Baegdeog at Yeongweul Gun, Gangweon-Do, is one of pure and well crystalized kaolinite having a thin hexagonal platy structure by X-ray, DTA and electron microscope analysis. Even though its extent is currently unknown, Jeondanto will be one of interesting materials for mineralogical study of its uniquely well crystalized structure.

• The Korean Journal of Ceramics
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• v.1 no.3
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• pp.143-146
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• 1995

Twins along(202) and (211) planes are observed in monoclinic $ZrO_2$ thin film, which is deposited on Si substrate by MOCVD at $350^{\circ}C$ and annealed at $1150^{\circ}C$ for 10 hours in air. These types of twin have not been reported in monoclinic $ZrO_2$. The twins seem to be originated from the two dimensional tensile stresses applied to the $ZrO_2$ thin film due to the different thermal expansions of $ZrO_2$ thin film and Si substrate.

• Transactions on Electrical and Electronic Materials
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• v.5 no.4
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• pp.143-147
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• 2004

Surface defects and bulk defects on SOI wafers are studied. Two new metrologies have been proposed to characterize surface and bulk defects in epitaxial layer transfer (ELTRAN) wafers. They included the following: i) laser scattering particle counter and coordinated atomic force microscopy (AFM) and Cu-decoration for defect isolation and ii) cross-sectional transmission electron microscope (TEM) foil preparation using focused ion beam (FIB) and TEM investigation for defect morphology observation. The size of defect is 7.29 urn by AFM analysis, the density of defect is 0.36 /cm$^2$ at as-direct surface oxide defect (DSOD), 2.52 /cm$^2$ at ox-DSOD. A hole was formed locally without either the silicon or the buried oxide layer (Square Defect) in surface defect. Most of surface defects in ELTRAN wafers originate from particle on the porous silicon.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.216-216
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• 2010

ITO는 n- type 반도체 재료로 Sn의 첨가로 인한 매우 낮은 전기저항과 안정성때문에 널리 사용되고 있는 재료이며 비교적 높은 band gap(3.55Ev)를 가짐으로 인하여 가시광선 영역에서 높은 투과도를 가지는 특징이 있다. 단점으로는 박막 제조 시에 증착시간의 증가함에 따라 음이온 충격 및 온도 상공으로 인한 막의 표면손상이 발생하게 되고 이것은 전기저항이 증가하는 요인으로 작용하는 문제점이 있다. 본 연구에서는 3가지 조성의 ITO박막을 스퍼터 장치를 이용하여 증착하고 그에 따른 전기적, 구조적, 광학적 특성을 분석 하였다. 증착된 ITO성막의 표면분석을 위해 AFM (Atomic Force Microscope)으로 표면 거칠기값 분석, XRD (X-ray diffraction)을 이용 결정성장분석, SEM (Scanning Electron Microscope)으로 표면의 미세구조관찰, 4Point pobe로 면 저항분석, spectrophotometer로 박막의 투과율과 흡수율을 분석하였다. 조성변화와 공정변수에 따른 전기적, 구조적, 광학적 특성변화의 원인분석으로 고효율의 ITO 박막성장 가능성을 조사하였다.