• 제목/요약/키워드: electron density profile

검색결과 102건 처리시간 0.02초

KSR-III 과학탑재 시스템 개발

  • 황승현;김준;전영두;김용하;장민환
    • 항공우주기술
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    • 제1권2호
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    • pp.83-90
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    • 2002
  • 본 논문에서는 3단형 과학관측로켓(KSR-III)에 탑재될 과학탑재부 시스템에 대하여 기술하였다. 과학탑재부에는 크게 오존측정기, 이온층 전자측정기, 대기광도계, 자력계 등이 있으며 선별적으로 탑재되어 한반도 상공의 고층 대기 상태에 대한 연구를 수행할 예정이다. 오존측정기는 한반도 상공의 오존 기둥 밀도를 측정하며 전자측정기는 이온층의 전자밀도와 전자온도를 측정한다. 대기광도계는 중간권의 대기광을 측정하며 자력계는 로켓 자세정보와 로켓이 비행하는 고도에서의 자기장 섭동량을 측정한다. 탑재체들은 현재 개발이 완료된 상태이며 지상 보정 실험도 수행하였으며 각종 환경시험을 통과하였다.

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마이크로파 레플렉토메터리를 이용한 KSIAR 플라즈마 밀도분포 재구성에 관한 연구 (Study on the Reconstruction of KSTAR Plasma Density Profiles Using Microwave Reflectometry)

  • 노영수
    • 대한전기학회논문지:전기물성ㆍ응용부문C
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    • 제54권8호
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    • pp.365-370
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    • 2005
  • Microwave diagnostics have been widely utilized to measure the important parameters of high temperature and high density plasmas. Reflectometry is known as a promising microwave diagnostic which has a number of merits to measure electron density profiles. In the KSTAR device, X-mode FM reflectometry is planned to measure the plasma density profiles. FM reflectometry is required to extract phase information on raw mixer IF signals, thereby obtaining time-of-flight of reflectometry signals. It is known that the data analysis method is crucial to determine the performance of FM reflectometry In fact, there are several analysis programs which have been utilized in various FM systems. Since each program was developed for a specific device, however, it is difficult to directly apply it to a different reactor like the KSTAR device. It is necessary, therefore, to develop a data analysis program for the KSTAR FM reflectometry. In this paper, complex digital demodulation (CDM) and wavelet transformation are examined in terms of the performance of density profile reconstruction. For the comparison of both methods, FM reflectometry signals are generated on the basis of assumed profiles and the interaction of the X-mode wave and the plasma. In order to see how well both methods work under various conditions, three types of profiles are assumed and noise effects are included. As a result, both methods work well under the condition of gentle density gradient and small noise level. As density gradient becomes steeper and noise level gets higher. the reconstruction performance of wavelet is better than that of CDM.

KSR-3 과학로켓용 전자환경 측정기 개발 (DEVELOPMENT OF LANGMUIR AND ELECTRON PROBE FOR KSR-III)

  • 황승현;김준;김준규;이수진;장영순;박정주;조광래;원영인
    • Journal of Astronomy and Space Sciences
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    • 제18권3호
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    • pp.249-256
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    • 2001
  • 한국항공우주연구원에서는 지난 1998년 KSR-2 촤학로켓에 이온층 전자환경 측정기를 탑재하여 한반도 상공의 전자 밀도, 전자 온도, 부동 전위등을 측정하는데 성공하였다. 이온층 전자환경 측정기는 한반도 상공 이온층의 전자 온도와 밀도를 측정하는데 목적이 있다. 이번 연구에서는 2002년 상반기 발사 예정인 KSR-3 과학로켓에 탑재될 전자환경 측정기를 개발하였고 일본에서 우주 환경 모사 실험을 수행하여 측정기의 성능을 확인하였다. 전자환경 측정기는 랑뮈어 프로브(Langmuir Probe)와 전자 온도 프로브(Electron Temperature Probe)로 구성되어 있으며 이 센서들의 측정 결과로부터 이온층의 전자 밀도와 온도에 대한 정보를 얻을 수 있다. 이렇게 개발된 전자환경 측정기로부터 신뢰성 있는 자료를 얻는다면 IRI(International Reference Ionosphere) 모델이나 PIM(Parameterized Ionospheric Model)과 비교하여 한반도 상공의 이온층 전자 환경에 대한 이해를 돕는데 기여할 수 있을 것으로 기대된다.

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단채널 덱타도핑 HEMT의 전압-전류 특성에 대한 2차원적 해석 (A Study on the I-V characteristics of a delta doped short-channel HEMT)

  • 이정호;채규수;김민년
    • 한국산학기술학회논문지
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    • 제5권4호
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    • pp.354-358
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    • 2004
  • 본 논문은 HEMT소자의 전류-전압특성을 해석적으로 모델링한 것으로 n-AlGaAs층의 전자농도를 고려하여 Gauss법칙과 비선형 전하제어모델을 이용하여 2DEG의 전자농도를 구하였고, 채널을 부분적으로 2차원적으로 해석하여 포화전압을 도출하였고, 계산된 결과는 n-AlGaAs의 전자농도를 고려하지 않은 결과와 비교하였을 때 비교적 정확한 전류전압특성을 보이고 있다

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차세대 노광공정용 Ta박막의 $0.2\mu\textrm{m}$ 미세패턴 식각특성 연구 (Study on the Etching Characteristics of $0.2\mu\textrm{m}$ fine Pattern of Ta Thin film for Next Generation Lithography Mask)

  • 우상균;김상훈;주섭열;안진호
    • 한국재료학회지
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    • 제10권12호
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    • pp.819-824
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    • 2000
  • 본 연구에서는 Electron Cyclotron Resonance plasma etching system 을 이용한 Ta 박막의 미세 식각 특성을 연구하였다. 염소 plasma를 사용하여 microwave power, RF Power, working pressure, gas chemistry 등의 변화에 따른 식각 profile의 영향을 조사하였고, pattern density가 증가함에 따라 발생하는 microloading 현상을 $0.2{\mu\textrm{m}}$ 이하의 패턴에서 확인 하였다. 이를 개선하기 위하여 식각 과정을 두 단계로 분리하는 2단계 식각 공정을 수행하였으며 이를 통해 우수한 식각 profile을 얻을 수 있었다.

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TDDFT Potential Energy Functions for Excited State Intramolecular Proton Transfer of Salicylic Acid, 3-Aminosalicylic Acid, 5-Aminosalicylic Acid, and 5-Methoxysalicylic Acid

  • Jang, Sung-Woo;Jin, Sung-Il;Park, Chan-Ryang
    • Bulletin of the Korean Chemical Society
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    • 제28권12호
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    • pp.2343-2353
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    • 2007
  • We report the application of time-dependent density functional theory (TDDFT) to the calculation of potential energy profile relevant to the excited state intramolecular proton transfer (ESIPT) processes in title molecules. The TDDFT single point energy calculations along the reaction path have been performed using the CIS optimized structure in the excited state. In addition to the Stokes shifts, the transition energies including absorption, fluorescence, and 0-0 transition are estimated from the TDDFT potential energy profiles along the proton transfer coordinate. The excited state TDDFT potential energy profile of SA and 3ASA resulted in very flat function of the OH distance in the range ROH = 1.0-1.6 A, in contrast to the relatively deep single minimum function in the ground state. Furthermore, we obtained very shallow double minima in the excited state potential energy profile of SA and 3ASA in contrast to the single minimum observed in the previous work. The change of potential energy profile along the reaction path induced by the substitution of electron donating groups (-NH2 and -OCH3) at different sites has been investigated. Substitution at para position with respect to the phenolic OH group showed strong suppression of excited state proton dislocation compared with unsubstitued SA, while substitution at ortho position hardly affected the shape of the ESIPT curve. The TDDFT results are discussed in comparison with those of CASPT2 method.

전산화 단층촬영 영상 분석에 의한 탄소/탄소 목삽입재의 밀도 분포 측정 (Density Profile Measurement of Needle-punched Carbon/Carbon Nozzle Throat by the Analysis of Computed Tomography Image)

  • 김동륜;윤남균;이진용
    • 한국추진공학회:학술대회논문집
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    • 한국추진공학회 2005년도 제25회 추계학술대회논문집
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    • pp.469-474
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    • 2005
  • 전산화 단층촬영법을 이용하여 탄소/탄소 목삽입재의 밀도 분포를 평가 하였다. 전산화 단층촬영 법의 Beam hardening, 전기적 잡음 및 산란 X-ray의 영상을 토정하고 신호 대 잡음비를 높여 최적화할 때 측정된 제작된 탄소/탄소 복합재료의 밀도는 98.74%의 신뢰도 수준에서 ${\pm}0.01g/cm^3$ 분포를 갖는 것으로 평가 되었다. 전산화 단층촬영 결과의 검증은 탄소/탄소 목삽입재를 절단하며 수침법에 의한 밀도 측정과 주사전자현미경 관찰을 통하여 수행되었으며 단층촬영결과는 수침법에 의한 밀도 분포와 주사전자현미경의 결과와 일치하였다.

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SHS 마이크로파에 의한 (Ti.Si)C 복합체의 합성 및 소결특성에 관한 연구 (Study on Synthesis and Characterization of (Ti.Si)C Composite by SHS Microwave)

  • 이형복;권상호;이재원;안주삼
    • 한국세라믹학회지
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    • 제32권9호
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    • pp.1009-1018
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    • 1995
  • (Ti.Si)C composite powders were synthesized by SHS method using microwave energy. Compositional and structural characterization of the powder were carried out by using scanning electron microscopy and X-ray diffraction. The average particle size of the synthesized (Ti.Si)C composite powders was smaller than that of the starting materials. From the results of the temperature profile, combustion temperature and velocity were decreased with increasing Si molar ratio. With increasing C molar ratio combustion temperature and velocity did not change. (Ti.Si)C composite was sintered at 185$0^{\circ}C$ for 60 min by using hot-pressing with 30 MPa. The best properties were obtained from the sintered specimen whose composition was 1 : 1 : 1.9 molar ratio of Ti : Si : C. The sintering density, flexural strength and vickers hardness of the sintered body were 4.71 g/㎤, 423 MPa and 21 GPa, respectively.

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Fabrication and Characterization of Free-Standing DBR Porous Silicon Film

  • Um, Sungyong;Sohn, Honglae
    • 통합자연과학논문집
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    • 제7권1호
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    • pp.1-4
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    • 2014
  • Distributed Bragg reflector porous silicon of different characteristics were formed to determine their optical constants in the visible wavelength range using a periodic square wave current between low and high current densities. The surface and cross-sectional SEM images of distributed Bragg reflector porous silicon were obtained using a cold field emission scanning electron microscope. The surface image of distributed Bragg reflector porous silicon indicates that the distributions of pores are even. The cross-sectional image illustrates that the multilayer of distributed Bragg reflector porous silicon exhibits a depth of few microns and applying of square current density during the etching process results two distinct refractive indices in the contrast. Distributed Bragg reflector porous silicon exhibited a porosity depth profile that related directly to the current-time profile used in etch. Its free-standing film was obtained by applying an electro-polishing current.

고각 환형 암시야 주사투과전자현미경기법과 투과전자현미경기법을 이용한 상용 청색 발광다이오드의 종합적인 구조분석 (Comprehensive Structural Characterization of Commercial Blue Light Emitting Diode by Using High-Angle Annular Dark Filed Scanning Transmission Electron Microscopy and Transmission Electron Microscopy)

  • 김동엽;홍순구;정태훈;이상헌;백종협
    • 한국재료학회지
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    • 제25권1호
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    • pp.1-8
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    • 2015
  • This study suggested comprehensive structural characterization methods for the commercial blue light emitting diodes(LEDs). By using the Z-contrast intensity profile of Cs-corrected high-angle annular dark field scanning transmission electron microscope(HAADF-STEM) images from a commercial lateral GaN-based blue light emitting diode, we obtained important structural information on the epilayer structure of the LED, which would have been difficult to obtain by conventional analysis. This method was simple but very powerful to obtain structural and chemical information on epi-structures in a nanometer-scale resolution. One of the examples was that we could determine whether the barrier in the multi-quantum well(MQW) was GaN or InGaN. Plan-view TEM observations were performed from the commercial blue LED to characterize the threading dislocations(TDs) and the related V-pit defects. Each TD observed in the region with the total LED epilayer structure including the MQW showed V-pit defects for almost of TDs independent of the TD types: edge-, screw-, mixed TDs. The total TD density from the region with the total LED epilayer structure including the MQW was about $3.6{\times}10^8cm^{-2}$ with a relative ratio of Edge- : Screw- :Mixed-TD portion as 80%: 7%: 13%. However, in the mesa-etched region without the MQW total TD density was about $2.5{\times}10^8cm^{-2}$ with a relative ratio of Edge- : Screw- :Mixed-TD portion of 86%: 5%: 9 %. The higher TD density in the total LED epilayer structure implied new generation of TDs mostly from the MQW region.