• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.589-592
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• 2002

The $Sr_{0.7}Bi_{2.3}Ta_2O_9$(SBT) thin films are deposited on Pt-coated electrode(Pt/TiO2/SiO2/Si) using RF magnetron sputtering method. The structural and electric properties of SBT capacitors were influenced with annealing atmosphere. In the XRD pattern, the SBT thin films in all annealing atmosphere had (105) orientation. In the SEM images, Bi-layered perovskite phase was crystallized in all annealing atmosphere and grains largely grew in oxygen annealing atmosphere. The maximum remanent polarization and the coercive electric field in oxygen annealing atmosphere are $12.40{\mu}C/cm^2$ and 48kV/cm respectively. The dielectric constant and leakage current density annealing in oxygen atmosphere are 340 and $6.81{\times}10^{-10}A/cm^2$ respectively. The fatigue characteristics of SBT capacitors did not change up to $10^{10}$ switching cycles.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.861-864
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• 2002

Ferroelectric $Bi_{4-x}Nd_xTi_3O_{12}$(BNdT) thin films with the composition(x=0.75) were prepared on pt/Ti/$SiO_2$/Si(100) substrate by metal-organic deposition. The electrical and structural characteristics of BNdT thin films were investigated to develop ferroelectric thin films for capacitor layers of FRAM. After spin coating, thin films were annealed at $650^{\circ}C$ for 1hour in oxygen atmosphere. Scanning electron micrographs showed uniform surfaces composed of rod-like grains. The $Bi_{4-x}Nd_xTi_3O_{12}$(X=0.75) thin film capacitors with a Pt top electrode showed better ferroelectric properties. At the applied voltage of 5V, the dielectric constant$(\varepsilon_r)$, dissipation factor$(tan{\delta})$, remanent polarization(2Pr) and nonvolatile swiching charge of the $Bi_{4-x}Nd_xTi_3O_{12}$(x=0.75)thin films were about 346.7, 0.095, $56{\mu}C/cm^2$ and $38{\mu}C/cm^2$ respectively. Also the capacitor did not show any significant fatigue up to $8{\times}10^{10}$ read/write switching cycles at a frequency of 1MHz.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.214-214
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• 2010

The 0.65Pb($Mg_{1/3}Nb_{2/3})O_3-0.35PbTiO_3$ (PMN-PT) thin films with $La_{0.5}Sr_{0.5}CoO_{3-\delta}$ (LSCO) bottom electrodes were grown on $CeO_2$/YSZ/Si(001), Pt/$TiO_2$/Si and $SrTiO_3$ (STO) substrates using conventional pulsed laser deposition (PLD) at a substrate temperature of $550^{\circ}C$. Since generally the crystallographic orientation of the bottom electrode induces the orientation of the films deposited on it, it allows us to observe the influence of the PMN-PT film orientation on the electrical properties. Phi scan done on PMN-PT/LSCO thin films shows epitaxial behavior of the films grown on sto substrates and $CeO_2$/YSZ buffered Si(001) substrates, and (110) texture on Pt/$TiO_2$/Si substrates. Polarization-electricfield (P-E) measurement shows good hysteresis behavior of PMN-PT films with remnant polarization of 18.2, 8.8, and $4.4{\mu}C/cm^2$ on $CeO_2$/YSZ/Si, Pt/TiO2/Si and STO substrates respectively.

• 한국전기전자재료학회논문지
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• 제11권2호
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• pp.138-145
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• 1998

The $(Pb_{0.9}Ca_{0.1})TiO_3$[PCT] thin films have been deposited by sol-gel processing on Si-wafer and ITO glass substrates. The creak-free films have been obtained by rapid thermal annealing at $700^{\circ}C$ for 10 minute and characterized by XRD, SEM and electrical measurements. Their tetragonality c/a was 1.041 and grain size was $0.15{\sim}0.2{\mu}m$. When the electrode system of sample was Au/PCT/ITO(MFM) and film thickness was $0.8{\mu}m$, dielectric constant, dielectric loss and Curie temperature were about 149, 0.085 and $449^{\circ}C$ at 10kHz, respectively. Spontaneous polarization $P_s$, remnant polarization $P_r$ and coercive field $E_c$ were about $5.29{\mu}C/cm^2$, $4.15{\mu}C/cm^2$ and 82kV/cm calculated by hysteresis loop.

• 한국전기전자재료학회논문지
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• 제29권10호
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• pp.620-624
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• 2016

Ferroelectric $Pb(Zr_{0.52}Ti_{0.48})O_3$ (PZT) films were deposited on SrTiO3(100) substrate by using conductive $SrRuO_3$ films as underlayer and their structural and ferroelectric properties were investigated. PZT films were grown in (00l) orientation on well lattice-matched pseudo-cubic $SrRuO_3$ films. Thickness dependence of ferroelectric and electrical properties of PZT films was investigated. PZT film with 400 nm thickness showed a remanent polarization ($P_r$) of $29.0{\mu}C/cm^2$ and coercive field ($E_c$) of 83 kV/cm, and $P_r$ decreased and $E_c$ increased with thickness reduction. The dielectric constant for PZT films showed gradual decrease with thickness reduction. Breakdown field of PZT films did not show the thickness dependence and displayed as high value as 1 MV/cm.

• 자원환경지질
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• 제20권3호
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• pp.197-201
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• 1987

3층 구조 대지의 음수 유도분극 반응을 디지탈 선형 필터법으로 구하여 검토하였다. 음수의 유도분극 반응은 전기비저항 구조가 K니 Q형일 때 나타나며, K형 구조의 경우 Q형보다 더 뚜렷한 음수의 반응을 보여 준다. 이러한 구조일 때, 유도분극 계수는 전기비저항 분포와 전극 배치의 함수로 주어지며, 표층의 계수만이 음수의 값을 가질 수 있다. 따라서 음수의 유도분극 반응은 표층이 분극성일 때 생길 가능성이 있으며, 그 외의 층의 분극성은 오히려 음수의 유도분극 반응을 줄이는 역할을 한다.

• 전기학회논문지
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• 제65권5호
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• pp.745-752
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• 2016

The parameters of Debye's equation were applied to analyze the frequency-dependent ground impedance of horizontally-buried wires. We present a new method, based on Debye's equation, of analyzing the effect of polarization on frequency-dependent ground impedance. The frequency-dependent ground impedances of a horizontally-buried wire are directly measured and calculated by applying sinusoidal current in the frequency range of 100 Hz to 10 MHz. Also, the results obtained in this work were compared with the data calculated from empirical equations and commercial programs. A new methodology using the delta-gap source model is proposed in order to calculate frequency-dependent ground impedance when the ground current is injected at the middle-point of the horizontal ground electrode. The high frequency ground impedance of horizontal electrodes longer than 30 m is larger or equal to its low frequency ground resistance. Consequently, the frequency-dependent ground impedance simulated with the proposed method is in agreement with the experimental data, and the validity of the computational simulation approach is confirmed.

• 한국세라믹학회지
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• 제53권5호
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• pp.511-520
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• 2016

Electrolyte-supported symmetric Ni-YSZ cermet electrodes of ca. $23{\mu}m$ were prepared by screenprinting and the impedance was measured as a function of humidity from 2% to 90% balanced in $H_2$ at a total flow rate of 50 sccm. The Ni felt current collector of 1 mm thickness exhibited a Gerischer-like gas concentration impedance in the low frequency range, which was similarly observed in the cermet-supported solid oxide cells, while the Pt paste collector exhibited only electrochemical polarization. The electrochemical polarization of both samples was modeled by a non-ideal diffusion-reaction transmission line model including CPEs with ${\alpha}$= 0.5. In the case of the Pt paste collector, all the Bisquert parameters exhibited humidity dependence to the -1/2 power, supporting a non-faradaic chemical reaction mechanism at three phase boundaries. Consequently, the surface diffusivity and reaction rate increased linearly with humidity. Less pronounced humidity dependence and somewhat lower utilization length with an Ni felt collector can be attributed to the diffusion-limited gas flow through the collector.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 1998년도 춘계학술발표회 초록집
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• pp.3-3
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• 1998

The atmospheric corrosIOn properties of Zinc (Zn) under wet/dry transition of $H_20$ film were investigated in this study. The atmospheric corrosion of metal is usually occurred as a result of repetitious thickness transition (so called wet/dry transition) of liquid phase which is covering the metal surface. Corrosion potential and the polarization behaviour of Zn during liquid film thickness transition were measured by Kelvin probe method which IS using vibrating reference electrode without touching the liquid film. The oxidized states of Zn as a result of successive wet/dry transition were also investigated by X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The results show that the corrosion potential and the corrosIOn rate of Zn both are increasing during drying. However, the corrOSIon rate is decreasing again when the Zn surface is completely dried while the corrosion potential still remains high. This behaviour can be explained by the polarization behaviour change of Zn according to the $H_20$ film thickness change. The completely dried surface is consisted mostly with Zn and ZnO phases. After a number of cycles of wet/dry transition, however, the oxidized Zn phase of ${\varepsilon}-Zn(OH)_2$, which has rather voluminous and defected structure, were found.

• 한국전기전자재료학회논문지
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• 제13권11호
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• pp.921-925
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• 2000

Characteristics of Pb(Mg, Nb)O$_3$-Pb(Zr, Ti)O$_3$system thick films fabricated by a screen printing method were investigated. The buffer layer were coated with various thickness of Ag-Pd by screen printing to investigate the effect as a diffusion barrier and deposited Pt as a electrode by sputtering on Ag-Pb layer. The printed thick films were burned out at 650$\^{C}$ and sintered at 950$\^{C}$ in O$_2$condition for each 20, 60min after printing with 350mesh screen. The thickness of piezoelectric thick film was 15∼20㎛ and Ag-Pb layer acted as a diffusion barrier above 3㎛ thickness. The PMN-PZT thick films were screen printed on Pt/Ag-Pb(6m) and sintered by 2nd step (650$\^{C}$/20min and 950$\^{C}$/1h) using paste mixed PMN-PZT and binder in the ratio of 70:30, and the remnant polarization of thick film was 9.1$\mu$C/㎠ in this conditions.