• Title/Summary/Keyword: electrode length MOSFET

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The EMTP Analysis and Characteristics of Load Impedance on Various Electrode length, Pulse Repetition in Pulse Corona Discharging (펄스코로나 방전의 전극길이, 펄스반복율에 따른 부하 임피던스 변화 특성 및 EMTP 해석)

  • Jeong, Jong-Han;Song, U-Jeong;Jeon, Jin-An;Jeong, Hyeon-Ju;Hong, Jeong-Hwan;Kim, Hui-Je
    • The Transactions of the Korean Institute of Electrical Engineers C
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    • v.51 no.4
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    • pp.158-163
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    • 2002
  • The pulsed Power system has been widely used to many applications, such as E/P(Electrostatic Precipitator), DeNOx/DeSOx power system, often generator, etc. In this paper, we study EMTP analysis and characteristics of critical voltage and load in impedance on various electrode length of pulse corona. To obtain a stable pulse voltage, we designed a compact pulse generator switched MOSFET and tested their characteristics by adjusting electrode length and pulse repetition. As a re sult, critical voltage of pulse corona and load impedance on increasing electrode length were decreased. These results indicate we can control critical voltage of pulse corona and suppress arc discharging between two electrodes.

Reduction of short channel Effects in Ground Plane SOI MOSFET′s (Growld Plane SOI MOSFET의 단채널 현상 개선)

  • ;;;;Jean-Pierre Colinge
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.41 no.4
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    • pp.9-14
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    • 2004
  • This paper reports the measurement and analysis of the short channel effects and the punchthrough voltage of SOI-MOSFET with a self-aligned ground plane electrode in the silicon mechanical substrate underneath the buried oxide. When the channel length is reduced below 0.2${\mu}{\textrm}{m}$ it is observed that the threshold voltage roll-off and the subthreshold swing with channel length are reduced and DIBL is improved more significantly in GP-SOI devices than FD-SOI devices. It is also observed from the dependence of threshold voltage with substrate biases that the body factor is a higher in GP-SOI devices than FD-SOI devices. From the measurement results of punchthrough voltage, GP-SOI devices show the higher punchthrough voltages than FD-SOI devices

A Study on the Characteristics of Corona Critical Voltage and EMTP Simulatuon on Increasing Load Impedance and Pulse Repetition (전극길이 및 펄스반복율에 대한 부하임피던스 특성변화 및 EMTP 해석에 관한 연구)

  • Joung, Jong-Han;Song, Woo-Jung;Jeon, Jin-An;Lee, U-Soo;Kim, Hwi-Young;Kim, Hee-Je
    • Proceedings of the KIEE Conference
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    • 2002.07c
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    • pp.1850-1852
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    • 2002
  • In this paper, we studies EMTP analysis and characteristics of critical voltage of pulse corona and load impedance on variable electrode length. To obtain a stable Pulse voltage, we designed a compact pulse generator switched MOSFET and tested their characteristics by adjusting electrode length and pulse repetition. As a result, critical voltage of pulse corona and load impedance on increasing electrode length were decreased. These results indicate we can control critical voltage of pulse corona and suppress arc discharging between two electrodes.

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A Study on the Characteristics of Corona Critical Voltage on Increasing Load Impedance (전극길이 및 펄스반복율에 대한 부하임피던스 특성변화에 관한 연구)

  • Joung, Jong-Han;Song, Woo-Jung;Jeon, Jin-An;Lee, U-Soo;Kim, Hwi-Young;Kim, Hee-Je
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.05a
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    • pp.184-186
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    • 2002
  • In this paper, we studies EMTP analysis and characteristics of critical voltage of pulse corona and load impedance on variable electrode length. To obtain a stable pulse voltage, we designed a compact pulse generator switched MOSFET and tested their characteristics by adjusting electrode length and pulse repetition. As a result, critical voltage of pulse corona and load impedance on increasing electrode length were decreased. These results indicate we can control critical voltage of pulse corona and suppress arc discharging between two electrodes.

  • PDF