• 한국기계가공학회지
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• 제20권2호
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• pp.93-100
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• 2021

Copper sheets has been used widely in electric and electron industry fields because they have good electric and heat conduction property of the material. And, in order to bond copper material, a kind of soldering process is generally used. But, because it is difficult to bond by soldering between overlapped thin copper sheets, so, another kind of brazing bonding process can be used in that case. But, because the brazing process needs wide bonding area, it needs heat treatment process in electric furnace. Generally, for spot welding of sheets, a conventional electric Resistance Spot Welding process(RSW) has been used, it has welding characteristics using contact resistance heating induced by electric current flow between sheets. But, because copper sheets has the low electric resistance, it is difficult to weld by electric resistance spot welding. So, in this study, an electric Resistance heated Surface Friction Spot Welding process(RSFSW) is suggested and is testified for the spot welding ability of thin copper sheets. It is known from the experimental results and simulation that the suggested spot welding process will be able to improve the spot welding ability of copper sheets by the combined three kinds of heating generated by surface friction by rotating pin, and conducted from heated steel electrode, and generated by contact resistance of electricity.

• 한국자동차공학회논문집
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• 제6권5호
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• pp.10-19
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• 1998

The erosion of electrode in spot welding of aluminium alloy by direct current is dependent on the electric polarity. The positive electrode is much more eroded than the negative one. To explain this phenomenon, Peltier effect has been generally accepted as a unique theory. In this study Peltier effect was evaluated by calculations on the basis of some references and experiments. The difference of heat generated by Peltier effect on both electrode surfaces was, however, only 4% of total heat generated during wel- ding. Because of insufficient explanation, Kohler theory, which is mainly affected by thin oxide film, was introduced. A theoretical calculation showed 17% of the temperature difference between the positive and negative electrode, in case "surface voltage" resulted from oxide film was 30% of total contact voltage. This revealed that the erosion of electrode could be more affected by Kohler theory than effect.an effect.

• 한국재료학회지
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• 제24권3호
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• pp.140-144
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• 2014

The contact mechanism of devices is usually researched at electrode contacts. However, the contact between a dielectric and channel at the MOS structure is more important. The graphene was used as a channel material, and the thin film transistor with MOS structure was prepared to observe the contact mechanism. The graphene was obtained on Cu foil by the thermal decomposition method with $H_2$ and $CH_4$ mixed gases at an ambient annealing temperature of $1000^{\circ}C$ during the deposition for 30 min, and was then transferred onto a $SiO_2/Si$ substrate. The graphene was doped in a nitrogen acidic solution. The chemical properties of graphene were investigated to research the effect of nitric atoms doping. The sheet resistance of graphene decreased after nitrogen acidic doping, and the sheet resistance decreased with an increase in the doping times because of the increment of negative charge carriers. The nitric-atom-doped graphene showed the Ohmic contact at the curve of the drain current and drain voltage, in spite of the Schottky contact of grapnene without doping.

• 접착 및 계면
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• 제21권3호
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• pp.86-92
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• 2020

본 연구에서 소스/드레인 전극이 위치하는 기판의 접촉영역과 두 전극사이 채널영역의 표면 에너지를 선택적으로 다르게 제어하여 고분자 트랜지스터의 소자성능과 전하주입 특성에 미치는 영향을 확인하였다. 채널영역의 표면에너지를 낮게 유지하면서 접촉영역의 표면에너지를 높였을 때 고분자 트랜지스터의 전하이동도는 0.063 ㎠/V·s, 접촉저항은 132.2 kΩ·cm, 그리고 문턱전압이하 스윙은 0.6 V/dec로 나타났으며, 이는 원래 소자에 비해 각각 2배와 30배 이상 개선된 결과이다. 채널길이에 따른 계면 트랩밀도를 분석한 결과, 접촉영역에서 선택적 표면처리에 의해 고분자반도체 분자의 공액중첩 방향과 전하주입 방향이 일치되면서 전하트랩 밀도가 감소한 것이 성능향상의 주요한 원인으로 확인되었다. 본 연구에서 적용한 전극과 고분자 반도체의 접촉영역에 선택적 표면처리 방법은 기존의 계면저항을 낮추는 다양한 공정과 함께 활용됨으로써 트랜지스터 성능향상을 최대화할 수 있는 가능성을 가진다.

• Geomechanics and Engineering
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• 제30권4호
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• pp.337-343
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• 2022

The electrical resistivity method is a well-known geophysical method for observing underground conditions, (such as anomalies) and the properties of soil and rock (such as porosity, saturation, and pore fluid characteristics). The shape of electrodes used in an electrical resistivity survey depends on the purpose of the survey and installation conditions. Most electrodes for field applications are cylindrical for sufficient contact with the ground, while some are conically sharpened at their tips for convenient penetration. Previous study only derived theoretical equations for rod-shaped electrodes with spherical tips. In this study, the theoretical resistance for two cylindrical electrodes with conical tips is derived and verified experimentally. The influence of the penetration depth and tip on the measurement is also discussed.

• Transactions on Electrical and Electronic Materials
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• 제13권1호
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• pp.35-38
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• 2012

In this study, we have attempted to characterize the photovoltaic effect in real-time measurement of photoinduced current in a poly-Si-based solar cell using photoconductive atomic force microscopy (PC-AFM). However, the high contact resistance that originates from the metal-semiconductor Schottky contact disturbs the current flow and makes it difficult to measure the photoinduced current. To solve this problem, a thin metallic film has been coated on the surface of the device, which successfully decreases the contact resistance. In the PC-AFM analysis, we used a metal-coated conducting cantilever tip as the top electrode of the solar cell and light from a halogen lamp was irradiated on the PC-AFM scanning region. As the light intensity becomes stronger, the current value increases up to $200{\mu}A$ at 80 W, as more electrons and hole carriers are generated because of the photovoltaic effect. The ratio of the conducting area at different conditions was calculated, and it showed a behavior similar to that generated by a photoinduced current. On analyzing the PC-AFM measurement results, we have verified the correlation between the light intensity and photoinduced current of the poly-Si-based solar cell in nanometer scale.

• 마이크로전자및패키징학회지
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• 제30권2호
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• pp.60-64
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• 2023

본 연구에서는 그래핀 기반 소자의 성능에 영향을 미치는 그래핀과 금속 사이의 전기적 접촉저항 특성을 비교 분석하였다. 화학기상증착법을 이용하여 고품질의 그래핀을 합성하였으며, 전극 물질로 Al, Cu, Ni 및 Ti를 동일한 두께로 그래핀 표면 위에 증착하였다. TLM (transfer length method) 방법을 통해 SiO₂/Si 기판에 전사된 그래핀과 금속의 접촉저항을 측정한 결과, Al, Cu, Ni, Ti의 평균 접촉저항은 각각 345 Ω, 553 Ω, 110 Ω, 174 Ω으로 측정되었다. 그래핀과 물리적 흡착 특성을 갖는 Al와 Cu에 비해 화학적 결합을 형성하는 Ni과 Ti의 경우, 상대적으로 더 낮은 접촉저항을 갖는 것을 확인하였다. 본 연구의 그래핀과 금속의 전기적 특성에 대한 연구 결과는 전극과의 낮은 접촉저항 형성을 통해 고성능 그래핀 기반 전자, 광전자소자 및 센서 등의 구현에 기여할 수 있을 것으로 기대한다.

• 한국기계가공학회지
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• 제21권8호
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• pp.99-109
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• 2022

In this study, an electric resistance-heated surface friction spot-welding process was proposed and tested for the spot-welding ability of copper and aluminum dissimilar metal sheets using electric resistance heating and surface friction heating. This process has welding variables, such as the current value, energizing cycles, rotational speed, and friction time. The current value and energizing cycle can affect the resistance heat, and the rotational speed of the rotating pin and friction time influence frictional heat generation. Resistance heating before friction heating has a preheating effect on the Cu-Al contact interface and a positive effect on preventing friction heat loss during the friction stage. However, because resistance preheating can soften the copper sheet and affect the contact stress and friction coefficient, it has difficulties that may adversely affect frictional heat generation. Therefore, the optimal combination of welding variables should be determined through simulations and experiments of the spot-welding process to determine the effects of electric resistance preheating on the suggested process. Through this procedure, it is known that the proposed spot-welding process can improve the welding quality during the spot welding of Cu-Al sheets.

• 정보저장시스템학회논문집
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• 제10권2호
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• pp.32-38
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• 2014

Heat emission from the laser diode used in the optical disc drive and the defects from the increased temperature at the system have attracted attentions from the field of the information storage device. Thermoelectric refrigerator is one of the fine solutions to solve these thermal problems. The refrigeration performance of thermoelectric device is dependent on the thermoelectric material's figure-of-merit. Meanwhile, high electrical contact resistivity between metal electrode and p- and n-type thermoelectric materials in the device would lead increased total electrical resistance resulting in the degeneracy in performance. This paper represents the manufacturing process of the PbTe-based material which has one of the highest figure-of-merit at medium-high-temperature, ~ 600K to 900 K, and the nickel contact layer for reduced electrical contact resistance at once, and the results showing the decent contact structure and figure-of-merit even after the long-term operation environment.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2010년도 하계학술대회 논문집
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• pp.65-65
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• 2010

본 논문은 이 중 직렬저항에서 한 부분을 차지하고 있는 전극부분과 리본부분의 접촉저항이 단순히 접촉 면적만이 아닌 위치에 따라서 다른 값을 지닌다는 전제에 연구를 하였다. 값이 작은 접촉저항의 명확히 눈에 보이는 결과를 위해서 접촉저항이 무한대가 되었을 때, 즉 전극과 리본이 박리가 된 상태를 기준으로 실험을 하였고, 그 이유를 증명하기위해 태양전지를 세부분으로 나누어 전류발생량을 측정하였고, 전극을 세부분으로 나눈 뒤 I-V curve를 측정하였다.