• Title/Summary/Keyword: electrode contact resistance

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A study on the TiN coating applied to a rolling wire probe

  • Song, Young-Sik;S. K. Yang;Kim, J.
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2003.10a
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    • pp.118-118
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    • 2003
  • In a rolling wire probe, a key component of an inspection apparatus for PDP electrode patterns, the electric performance of it is known to be strongly dependent on the surface condition of a collet pin, a needle pin, and a wire. However, the collet and needle pins rotate very rapidly in contact with each other, which results in the degradation of the surface by the heat and friction and finally the formation of black wear marks on the surface after a several hundred hours test. Once the black wear marks appear on the surface, the electric resistance of the probe increases sharply and so the integrity of the probe is severely damaged. In this experiment, TiN coating, which has excellent electric conductances and good wear-resistance, has been applied on the surface of collect and needle pins for preventing the surface damages. In order to achieve the homogeneous coating with a good adhesion property, special coating substrate stages and jigs were designed and applied during coating. TiN has been deposited using 99.999% Titanium target by a DC reactive sputtering method. According to the components and jigs, processing parameters, such as DC power, RF bias and the flow rate ratio of Ar and N$_2$ used as reactive gases, has been controlled to obtain good TiN films. Detailed problems and solutions for applying the new substrate stages and jigs will be discussed.

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Surface Properties of WO3/Ag/WO3 Transparent Electrode Film with Multilayer Structures (적층구조에 적용하기 위한 WO3/Ag/WO3 투명전극막의 표면 특성 제어)

  • Kang, Dong-Soo;Lee, Boong-Joo;Kwon, Hong-Kyu;Shin, Paik-Kyun
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.64 no.9
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    • pp.1323-1329
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    • 2015
  • The WO3/Ag/WO3 transparent thin films are fabricated by the RF magnetron sputtering. This has a transmittance of front and rear about 90% in the visible light range and surface resistance of 6.41Ω/□. In this paper, we analyzed the surface characteristics caused by the working pressure and O2 plasma surface treatment to apply a transparent electrode that was prepared to the laminated structure with other materials. The working pressure was changed in the WO3 film to 10mTorr, 7mTorr, and 5mTorr, it showed a lower than roughness of conventional ITO. In addition, by 55.5774 J/m2 at 5mTorr, it shows the hydrophobic property with lower process pressure. O2 plasma surface treatment was changed at the condisions of the RF power to 150W, 100W, and 50W and the process time to 240s, 180s, 120s, and 60s. The surface roughness are the maximum roughness(Rmax) 6.437nm and the average roughness(Rq) 0.827nm at RF power 150W, and the maximum roughness (Rmax) 6.880nm and the average roughness (Rq) 0.839nm at process time 240sec. It showed a lower value than the surface treatment. also about working pressure and process time is increased, it showed the hydrophobic.

Technology of Flexible Transparent Conductive Electrode for Flexible Electronic Devices (유연전자소자를 위한 차세대 유연 투명전극의 개발 동향)

  • Kim, Joo-Hyun;Chon, Min-Woo;Choa, Sung-Hoon
    • Journal of the Microelectronics and Packaging Society
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    • v.21 no.2
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    • pp.1-11
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    • 2014
  • Flexible transparent conductive electrodes (TCEs) have recently attracted a great deal of attention owing to rapid advances in flexible electronic devices, such as flexible displays, flexible photovoltanics, and e-papers. As the performance and reliability of flexible electronics are critically affected by the quality of TCE films, it is imperative to develop TCE films with low resistivity and high transparency as well as high flexibility. Indium tin oxide (ITO) has been the most dominant transparent conducting material due to its high optical transparency and electrical conductivity. However, ITO is susceptible to cracking and delamination when it is bent or deformed. Therefore, various types of flexible TCEs, such as carbon nanotube, conducting polymers, graphene, metal mesh, Ag nanowires (NWs), and metal mesh have been extensively investigated. Among several options to replace ITO film, Ag NWs and metal mesh have been suggested as the promising candidate for flexible TCEs. In this paper, we focused on Ag NWs and metal mesh, and summarized the current development status of Ag NWs and metal mesh. The several critical issues such as high contact resistance and haze are discussed, and newly developed technologies to resolve these issues are also presented. In particular, the flexibility and durability of Ag NWs and metal mesh was compared with ITO electrode.

Spray coating of electrochemically exfoliated graphene/conducting polymer hybrid electrode for organic field effect transistor

  • Kim, Youn;Kwon, Yeon Ju;Hong, Jin-Yong;Park, Minwoo;Lee, Cheol Jin;Lee, Jea Uk
    • Journal of Industrial and Engineering Chemistry
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    • v.68
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    • pp.399-405
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    • 2018
  • We report the fabrication of organic field-effect transistors (OFETs) via spray coating of electrochemically exfoliated graphene (EEG) and conducting polymer hybrid as electrodes. To reduce the roughness and sheet resistance of the EEG electrodes, subsequent coating of conducting polymer (poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate) (PEDOT:PSS)) and acid treatment was performed. After that, active channel layer was developed by spin coating of semiconducting poly(3-hexylthiophene) on the hybrid electrodes to define the bottom gate bottom contact configuration. The OFET devices with the EEG/PEDOT:PSS hybrid electrodes showed a reasonable electrical performances (field effect mobility = $0.15cm^2V^{-1}\;s^{-1}$, on/off current ratio = $10^2$, and threshold voltage = -1.57V). Furthermore, the flexible OFET devices based on the Polydimethlsiloxane (PDMS) substrate and ion gel dielectric layer exhibited higher electrical performances (field effect mobility = $6.32cm^2V^{-1}\;s^{-1}$, on/off current ratio = $10^3$, and threshold voltage = -1.06V) and excellent electrical stability until 1000 cycles of bending test, which means that the hybrid electrode is applicable to various organic electronic devices, such as flexible OFETs, supercapacitors, organic sensors, and actuators.

Materials Compatibility and Structure Optimization of Test Department Probe for Quality Test of Fingerprint Sensor (지문인식센서 품질평가를 위한 검사부 프로브의 소재 적합성과 구조 최적화 연구)

  • Son, Eun-Won;Youn, Ji Won;Kim, Dae Up;Lim, Jae-Won;Kim, Kwang-Seok
    • Journal of the Microelectronics and Packaging Society
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    • v.24 no.4
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    • pp.73-77
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    • 2017
  • Recently, fingerprint sensors have widely used for personal information security, and require quality evaluation to reduce an error of their recognition rate. Quality of fingerprint sensors is evaluated by variation of their electrical resistance introducing by contacts between a probe tip and a sensor electrode, Investigation on the materials compatability and structure optimization of probe is required to reduce deformation of sensor electrode for repeatability of quality testing. Nickel, steel(SK4), beryllium copper, and phosphor bronze were considered as probe materials, and beryllium copper was the most appropriate for materials of probe tips, considering indentation and contact resistance while being contacted probe tips on electrodes. Probes of an inspection part were manufactured with the single-unit structure for physical damage prevention and parallel processing capability. Inspection repeatability was evaluated by voltage variation of fingerprint sensors when the specific current was applied. A single-unit inspection part with beryllium copper probe tips showed excellent repeatability within ${\pm}0.003V$ of its voltage variation.

The field emission characteristics of an oxidized porous polysilicon field emitter using Pt/Ti emitter-electrode (Pt/Ti 전극을 사용한 산하된 다공질 폴리 실리콘 전계방출소자의 특성)

  • Han Sang-Kug;Park Keun-Yong;Choi Sie-Young
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.42 no.6 s.336
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    • pp.23-30
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    • 2005
  • In this paper, OPPS(oxidized porous poly-silicon) field emitters were fabricated by using various emitter-electrode metal and these electron emission characteristics were investigated for different thermal annealing effects. The addressed OPPS field emitter with Pt/Ti emitter electrode annealed at $300^{\circ}C$-1hr showed the efficiency of $2.98\%$ at $V_{ps}$=12 V and one annealed at $350^{\circ}C$-1hr showed the highest efficiency of $3.37\%$at $V_{ps}$=16V. They are resulted from the improvement of interfacial contact characteristics of thin emitter metal to an oxidized porous poly-silicon and the decrease of electrical resistance of emitter metal. The brightness of the OPPS field emitter increases linearly in $V_{ps}$ and after oxidation process for $900^{\circ}C$-50min, the brightness of the OPPS field emitter with the as-deposited Pt/Ti emitter electrode was 3600 cd/$m^2$ at the $V_{ps}$=15 V, 6260 cd/$m^2$ at the $V_{ps}$=20 V. Thermal treatment improved the adhesion between the Ti buffer layer and the oxidized porous poly-silicon and also played an important role in the uniform distribution of electric field to the emitter electrode.

Effect of Compensation for Thickness Reduction by Chemical Degradation of PEMFC Membrane on Performance and Durability (PEMFC 고분자막의 화학적인 열화에 의한 두께 감소 보정이 성능 및 내구성에 미치는 영향)

  • Sohyeong Oh;Yoojin Kim;Seungtae Lee;Donggeun Yoo;Kwonpil Park
    • Korean Chemical Engineering Research
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    • v.62 no.1
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    • pp.1-6
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    • 2024
  • As the demand for hydrogen electric vehicles for commercial vehicles increases, the durability of PEMFCs must increase more than five times that of passenger cars, so research and development to improve durability is urgent. When the PEMFC membrane electrode assembly (MEA) undergoes chemical degradation, the MEA thickness decreases and pinholes occur. In this study, changes in the performance and durability of the MEA were measured while increasing the clamping pressure of the unit cell after open circuit voltage (OCV) holding, an accelerated chemical degradation experiment. As the clamping pressure increased, the resistance of the polymer membrane and the membrane/electrode contact resistance decreased, improving the I-V performance and reducing the hydrogen permeability. As the hydrogen permeability decreased, the OCV increased. When the pinhole area was removed and the MEA clamping pressure was increased, the hydrogen permeability decreased sharply, confirming that the local degradation has a large effect on the performance and durability of the entire cell. When the pinhole was removed and re-clamping and OCV holding was evaluated, it was confirmed that the durability improved according to the decrease in membrane resistance and hydrogen permeability.

Hardness and EDM Processing of MoSi$_2$Intermetallics for High Temperature Ship Engine (고온선박엔진용 MoSi$_2$금속간화합물의 경도와 방전가공특성)

  • 윤한기;이상필
    • Journal of Ocean Engineering and Technology
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    • v.16 no.6
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    • pp.60-64
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    • 2002
  • This paper describes the machining characteristics of the MoSi$_2$--based composites through the process of electric discharge drilling with various tubular electrodes. In addition to hardness characteristics, microstructures of Nb/MoSi$_2$laminate composites were evaluated from the variation of fabricating conditions, such as preparation temperature, applied pressure, and pressure holding time. MoSi$_2$-based composites have been developed in new materials for jet engines of supersonic-speed airplanes and gas turbines for high-temperature generators. These high performance engines may require new hard materials with high strength and high temperature-resistance. Also, with the exception of grinding, traditional machining methods are not applicable to these new materials. Electric discharge machining (EDM) is a thermal process that utilizes a spark discharge to melt a conductive material. The tool electrode is almost -unloaded, because there is n direct contact between the tool electrode and the work piece. By combining a non-conducting ceramic with more conducting ceramic, it was possible to raise the electrical conductivity. From experimental results, it was found that the lamination from Nb sheet and MoSi$_2$ powder was an excellent strategy to improve hardness characteristics of monolithic MoSi$_2$. However, interfacial reaction products, like (Nb, Mo)SiO$_2$and Nb$_2$Si$_3$formed at the interface of Nb/MoSi$_2$, and increased with fabricating temperature. MoSi$_2$composites, with which a hole drilling was not possible through the conventional machining process, enhanced the capacity of ED-drilling by adding MbSi$_2$, relative to that of SiC or ZrO$_2$reinforcements.

Transparent and Flexible All-Organic Multi-Functional Sensing Devices Based on Field-effect Transistor Structure

  • Trung, Tran Quang;Tien, Nguyen Thanh;Seol, Young-Gug;Lee, Nae-Eung
    • Proceedings of the Korean Vacuum Society Conference
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    • 2011.02a
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    • pp.491-491
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    • 2011
  • Transparent and flexible electronic devices that are light-weight, unbreakable, low power consumption, optically transparent, and mechanical flexible possibly have great potential in new applications of digital gadgets. Potential applications include transparent displays, heads-up display, sensor, and artificial skin. Recent reports on transparent and flexible field-effect transistors (tf-FETs) have focused on improving mechanical properties, optical transmittance, and performances. Most of tf-FET devices were fabricated with transparent oxide semiconductors which mechanical flexibility is limited. And, there have been no reports of transparent and flexible all-organic tf-FETs fabricated with organic semiconductor channel, gate dielectric, gate electrode, source/drain electrode, and encapsulation for sensor applications. We present the first demonstration of transparent, flexible all-organic sensor based on multifunctional organic FETs with organic semiconductor channel, gate dielectric, and electrodes having a capability of sensing infrared (IR) radiation and mechanical strain. The key component of our device design is to integrate the poly(vinylidene fluoride-triflouroethylene) (P(VDF-TrFE) co-polymer directly into transparent and flexible OFETs as a multi-functional dielectric layer, which has both piezoelectric and pyroelectric properties. The P(VDF-TrFE) co-polumer gate dielectric has a high sensitivity to the wavelength regime over 800 nm. In particular, wavelength variations of P(VDF-TrFE) molecules coincide with wavelength range of IR radiation from human body (7000 nm ~14000 nm) so that the devices are highly sensitive with IR radiation of human body. Devices were examined by measuring IR light response at different powers. After that, we continued to measure IR response under various bending radius. AC (alternating current) gate biasing method was used to separate the response of direct pyroelectric gate dielectric and other electrical parameters such as mobility, capacitance, and contact resistance. Experiment results demonstrate that the tf-OTFT with high sensitivity to IR radiation can be applied for IR sensors.

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Design and Fabrication of Flexible OTFTs by using Nanocantact Printing Process (미세접촉프린팅 공정을 이용한 유연성 유기박막소자(OTFT)설계 및 제작)

  • Jo Jeong-Dai;Kim Kwang-Young;Lee Eung-Sug;Choi Byung-Oh;Esashi Masayoshi
    • Proceedings of the Korean Society of Precision Engineering Conference
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    • 2005.10a
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    • pp.506-508
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    • 2005
  • In general, organic TFTs are comprised of four components: gate electrode, gate dielectric, organic active semiconductor layer, and source and drain contacts. The TFT current, in turn, is typically determined by channel length and width, carrier field effect mobility, gate dielectric thickness and permittivity, contact resistance, and biasing conditions. More recently, a number of techniques and processes have been introduced to the fabrication of OTFT circuits and displays that aim specifically at reduced fabrication cost. These include microcontact printing for the patterning of metals and dielectrics, the use of photochemically patterned insulating and conducting films, and inkjet printing for the selective deposition of contacts and interconnect pattern. In the fabrication of organic TFTs, microcontact printing has been used to pattern gate electrodes, gate dielectrics, and source and drain contacts with sufficient yield to allow the fabrication of transistors. We were fabricated a pentacene OTFTs on flexible PEN film. Au/Cr was used for the gate electrode, parylene-c was deposited as the gate dielectric, and Au/Cr was chosen for the source and drain contacts; were all deposited by ion-beam sputtering and patterned by microcontact printing and lift-off process. Prior to the deposition of the organic active layer, the gate dielectric surface was treated with octadecyltrichlorosilane(OTS) from the vapor phase. To complete the device, pentacene was deposited by thermal evaporation and patterned using a parylene-c layer. The device was shown that the carrier field effect mobility, the threshold voltage, the subthreshold slope, and the on/off current ratio were improved.

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