• Title/Summary/Keyword: electrochemical etching

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Development of Bidirectional Pulse Power Electrochemical Etching System for the Groove Manufacturing of the Dynamic Bearings (동압베어링의 그르브 가공용 양방향 펄스 파워 전해가공시스템 개발)

  • Lee, Yong-Geun
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.54 no.4
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    • pp.224-229
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    • 2005
  • This paper presents a bidirectional pulse power electrochemical etching system for groove manufacturing of the dynamic bearings. To manufacture the dynamic bearing for the groove, it is very important to consider the depth and roughness. If the precision of the groove is not exact, we can not get the desirable performance for the target of the dynamic bearing. To make the groove of bearing precise, we propose the method of electrochemical etching system. In order to design the depth and roughness exactly, the bidirectional pulse power converter is proposed. With the bidirectional pulse power converter, we obtain the condition and the parameters of converter such as frequency, duty ratio, time, temperature, velocity, pressure and so on. In this paper, we get the experimental results to verify the precise groove manufacturing.

Surface Modification Method of Stainless Steel using Electrochemical Etching (전기화학적 에칭을 이용한 스테인리스 스틸의 표면 개질)

  • Lee, Chan;Kim, Joonwon
    • Journal of the Korean Society for Precision Engineering
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    • v.31 no.4
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    • pp.353-358
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    • 2014
  • This paper reports a simple, yet effective 1-step surface modification method for stainless steel. Electrochemical etching in dilute Aqua Regia forms hierarchical micro and nanoscale structure on the surface. The surface becomes highly hydrophobic (${\sim}150^{\circ}$) as a result of the etching in terms of static contact angle (CA). However the liquid drops easily pinned on the surface because of high contact angle hysteresis (CAH), which is called a "petal effect": The petal effect occur because of gap between surface microstructures, despite of intrinsic hydrophobicity of the base material. The pore size and period of surface structure can be controlled by applied voltage during the etching. This method can be applied to wide variety of industrial demand for surface modification, while maintaining the advantageous anti-corrosion property of stainless steel.

The Fabrication of Digitron Grid by Photoetching Process (포토에칭법에 의한 Digitron용 Grid제조에 관한 연구)

  • 김만;이종권
    • Journal of the Korean institute of surface engineering
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    • v.29 no.1
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    • pp.60-72
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    • 1996
  • A photoetching process is widely used for small and high precision parts in machinery, electronic and semi-conductor industries. One of the high precision parts, grid is very important part of digitron which use electron display, and it is fabricated by only photoetching process because of high precision. In this study, to develop high precision digitron grid, characteristics of etching solution were investigated with electrochemical test, that was potentiodynamic test and immersion test in the ferric chloride solution and added some additives. Based on the electrochemical etching test, grid was fabricated by continuous photoetching process at various etching condition. From the result of measured line width and etching depth under-cut and etching factor were calculated. For the fabrication of 25$\mu\textrm{m}$ line width, optimal etching condition was etching temperature 40~$45^{\circ}C$, spray pressure 1.5kg/$\textrm{cm}^2$ and etching time 3~4min.

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Enhanced Activity for Oxygen Evolution Reaction of Nanoporous IrNi thin film Formed by Electrochemical Selective Etching Process

  • Park, Shin-Ae;Shim, Kyubin;Kim, Kyu-Su;Moon, Young Hoon;Kim, Yong-Tae
    • Journal of Electrochemical Science and Technology
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    • v.10 no.4
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    • pp.402-407
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    • 2019
  • Water electrolysis is known as the most sustainable and clean technology to produce hydrogen gas, however, a serious drawback to commercialize this technology is due to the slow kinetics in oxygen evolution reaction (OER). Thus, we report on the nanoporous IrNi thin film that reveals a markedly enhanced OER activity, which is attained through a selective etching of Os from the IrNiOs alloy thin film. Interestingly, electrochemical selective etching of Os leads to the formation of 3-dimensionally interconnected nanoporous structure providing a high electrochemical surface area (ECSA, 80.8 ㎠), which is 90 fold higher than a bulk Ir surface (0.9 ㎠). The overpotential at the nanoporous IrNi electrode is markedly lowered to be 289 mV at 10 mA cm-2, compared with bulk Ir (375 mV at 10 mA cm-2). The nanoporous IrNi prepared through the selective de-alloying of Os is promising as the anode material for a water electrolyzer.

Laser Micro Machining and Electrochemical Etching After Surface Coating (미세 레이저 가공의 표면코팅 후 전해 에칭)

  • Kim, Tae Pung;Park, Min Soo
    • Journal of the Korean Society for Precision Engineering
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    • v.30 no.6
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    • pp.638-643
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    • 2013
  • Laser beam machining (LBM) is fast, contactless and able to machine various materials. So it is used to cut metal, drill holes, weld or pattern the imprinted surface. However, after LBM, there still leave burrs and recast layers around the machined area. In order to remove these unwanted parts, LBM process often uses electrochemical etching (ECE). But, the total thickness of workpiece is reduced because the etching process removes not only burrs and recast layers, but also the entire surface. In this paper, surface coating was performed using enamel after LBM on metal. The recast layer can be selectively removed without decreasing total thickness. Comparing with LBM process only, the surface quality of enamel coating process was better than that. And edge shape was also maintained after ECE.

Micromachining of Si substrate Using Electrochemical Etch-Stop in Aqueous TMAH/IPA/pyrazine Solution (TMAH/IPA/Pyrazine 수용액에서 전기화학적 식각정지법을 이용한 Si 기판의 미세가공)

  • 박진성;정귀상
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.397-400
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    • 1997
  • This paper presentes the characteristics of Si anisotropic etching and electrochemical etch-stop in aqueous TMAH/IPA/pyrazine solution. (100) Si etching rate of 0.747 $\mu\textrm{m}$/min which faster 86% than TMAH 25 wt.%/IPA 17 vol.% solution was obtained using best etching condition at TMAH 25 wt.%/IPA 17 vol.%/pyrazine 0.1 g and the etching rate of (100) Si was decreased with more additive quantity of pyrazine. I-V curve of p-type Si in TMAH/IPA/pyrazine was obtained. OCP(Open Circuit Potential) and PP(Passivation Potential) were -2 V and -0.9 V, respectively. Si diaphragms were obtained by electrochemical etch-stop in aqueous TMAH/IPA/pyrazine solution.

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Shape and Diameter Control of Microshafts in Electrochemical Process (전해 프로세스에 의한 미세축 가공시 형상 및 직경 제어)

  • Lim, Yung-Mo;Lim, Hyung-Jun;Kim, Soo-Hyun
    • Journal of the Korean Society for Precision Engineering
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    • v.18 no.5
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    • pp.50-56
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    • 2001
  • Fabrication methods are shown to produce slender and cylindrical tungsten shafts by electrochemical etching. The shape of microshatf formed by electrochemical etching is determined by the combination of two conflicting factors, i.e., initial shape and diffusion layer. We can obtain a desirable shaft profile by adjusting the thickness gradient of diffusion layer. The diameter of microshaft is controlled by mathematical model based on relation between process parameters and diameter.

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Improved Antireflection Property of Si by Au Nanoparticle-Assisted Electrochemical Etching (금 나노입자 촉매를 이용한 단결정 실리콘의 전기화학적 식각을 통한 무반사 특성 개선)

  • Ko, Yeong-Hwan;Joo, Dong-Hyuk;Yu, Jae-Su
    • Journal of the Korean Vacuum Society
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    • v.21 no.2
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    • pp.99-105
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    • 2012
  • We fabricated the textured silicon (Si) surface on Si substrates by the electrochemical etching using gold (Au) nanoparticle catalysts. The antireflective property of the fabricated Si nanostructures was improved. The Au nanoparticles of ~20-150 nm were formed by the rapid thermal annealing using thermally evaporated Au films on Si. In the chemical etching, the aqueous solution containing $H_2O_2$ and HF was used. In order to investigate the effect of electrochemical etching on the etching depth and reflectance characteristics, the sample was immersed in the aqueous etching solution for 1 min with and without applied cathodic voltages of -1 V and -2 V. As a result, the solar weighted reflectance, i.e., the averaged reflectance with considering solar spectrum (air mass 1.5), could be efficiently reduced for the electrochemically etched Si by applying the cathodic voltage of -2 V, which is expected to be useful for Si solar cell applications.

Electrochemical Etching of Silicon in Porous Silicon Layer Transfer Process for Thin Film Solar Cell Fabrication (초박형 태양전지의 Porous Si Layer Transfer 기술 적용을 위한 전기화학적 실리콘 에칭)

  • Lee, Ju-Young;Han, Wone-Keun;Lee, Jae-Ho
    • Journal of the Microelectronics and Packaging Society
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    • v.16 no.4
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    • pp.55-60
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    • 2009
  • Porous silicon film is fabricated by electrochemical etching in a chemical mixture of HF and ethanol. Effects of Si type, Si resistivity, ultrasonic frequency, current density and etching time on surface morphology of PS film were studied. Electrochemical etching in ultrasonic bath promotes the uniformity of porous layer of Si. Frequency of ultrasonic was increased from 40 kHz to 130 kHz to obtain uniform pores on the Si surface. When current density was higher, the sizes of pores were larger. The new etching cell using back contact metal and current shield help to overcome nonhomogeneity and current crowding effect, and then leads to fabricate uniform pores on the Si surface. The distribution of pore size shows no notable tendency with etching time.

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