• 제목/요약/키워드: electro-thermal

검색결과 418건 처리시간 0.026초

Nanosheet FETs에서의 효과적인 전열어닐링 수행을 위한 기계적 안정성에 대한 연구 (Investigation of Mechanical Stability of Nanosheet FETs During Electro-Thermal Annealing)

  • 왕동현;박준영
    • 한국전기전자재료학회논문지
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    • 제35권1호
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    • pp.50-57
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    • 2022
  • Reliability of CMOS has been severed under aggressive device scaling. Conventional technologies such as lightly doped drain (LDD) and forming gas annealing (FGA) have been applied for better device reliability, but further advances are modest. Alternatively, electro-thermal annealing (ETA) which utilizes Joule heat produced by electrodes in a MOSFET, has been newly introduced for gate dielectric curing. However, concerns about mechanical stability during the electro-thermal annealing, have not been discussed, yet. In this context, this paper demonstrates the mechanical stability of nanosheet FET during the electro-thermal annealing. The effect of mechanical stresses during the electro-thermal annealing was investigated with respect to device design parameters.

Thermal and Mechanical Properties of Electro-Slag Cast Steel for Hot Working Tools

  • Moon Young Hoon;Kang Boo Hyun;Van Tyne Chester J.
    • Journal of Mechanical Science and Technology
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    • 제19권2호
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    • pp.496-504
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    • 2005
  • The thermal and mechanical properties of an electro-slag cast steel of a similar chemical composition with an AISI-6F2 steel are investigated and compared with a forged AISI-6F2 steel. AISI-6F2 is a hot-working tool steel. Electro-slag casting (ESC) is a method of producing ingots in a water-cooled metal mold by the heat generated in an electrically conductive slag when current passes through a consumable electrode. The ESC method provides the possibility of producing material for the high quality hot-working tools and ingots directly into a desirable shape. In the present study, the thermal and mechanical properties of yield strength, tensile strength, hardness, impact toughness, wear resistance, thermal fatigue resistance, and thermal shock resistance for electro-slag cast and forged steel are experimentally measured for both annealed and quenched and tempered heat treatment conditions. It has been found that the electro-slag cast steel has comparable thermal and mechanical properties to the forged steel.

3D NAND 플래시메모리 String에 전열어닐링 적용을 가정한 기계적 안정성 분석 및 개선에 관한 연구 (Study on Improving the Mechanical Stability of 3D NAND Flash Memory String During Electro-Thermal Annealing)

  • 김유진;박준영
    • 한국전기전자재료학회논문지
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    • 제35권3호
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    • pp.246-254
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    • 2022
  • Localized heat can be generated using electrically conductive word-lines built into a 3D NAND flash memory string. The heat anneals the gate dielectric layer and improves the endurance and retention characteristics of memory cells. However, even though the electro-thermal annealing can improve the memory operation, studies to investigate material failures resulting from electro-thermal stress have not been reported yet. In this context, this paper investigated how applying electro-thermal annealing of 3D NAND affected mechanical stability. Hot-spots, which are expected to be mechanically damaged during the electro-thermal annealing, can be determined based on understanding material characteristics such as thermal expansion, thermal conductivity, and electrical conductivity. Finally, several guidelines for improving mechanical stability are provided in terms of bias configuration as well as alternative materials.

Electro-Thermal Modeling and Experimental Validation of Integrated Microbolometer with ROIC

  • Kim, Gyungtae;Kim, Taehyun;Kim, Hee Yeoun;Park, Yunjong;Ko, Hyoungho
    • JSTS:Journal of Semiconductor Technology and Science
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    • 제16권3호
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    • pp.367-374
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    • 2016
  • This paper presents an electro-thermal modeling of an amorphous silicon (a-Si) uncooled microbolometer. This modeling provides a comprehensive solution for simulating the electro-thermal characteristics of the fabricated microbolometer and enables electro-thermal co-simulation between MEMS and CMOS integrated circuits. To validate this model, three types of uncooled microbolometers were fabricated using a post-CMOS surface micromachining process. The simulation results show a maximum discrepancy of 2.6% relative to the experimental results.

Thermal Transient Characteristics of Die Attach in High Power LED Package

  • Kim Hyun-Ho;Choi Sang-Hyun;Shin Sang-Hyun;Lee Young-Gi;Choi Seok-Moon;Oh Yong-Soo
    • 마이크로전자및패키징학회지
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    • 제12권4호통권37호
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    • pp.331-338
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    • 2005
  • The rapid advances in high power light sources and arrays as encountered in incandescent lamps have induced dramatic increases in die heat flux and power consumption at all levels of high power LED packaging. The lifetime of such devices and device arrays is determined by their temperature and thermal transients controlled by the powering and cooling, because they are usually operated under rough environmental conditions. The reliability of packaged electronics strongly depends on the die attach quality, because any void or a small delamination may cause instant temperature increase in the die, leading sooner or later to failure in the operation. Die attach materials have a key role in the thermal management of high power LED packages by providing the low thermal resistance between the heat generating LED chips and the heat dissipating heat slug. In this paper, thermal transient characteristics of die attach in high power LED package have been studied based on the thermal transient analysis using the evaluation of the structure function of the heat flow path. With high power LED packages fabricated by die attach materials such as Ag paste, solder paste and Au/Sn eutectic bonding, we have demonstrated characteristics such as cross-section analysis, shear test and visual inspection after shear test of die attach and how to detect die attach failures and to measure thermal resistance values of die attach in high power LED package. From the structure function oi the thermal transient characteristics, we could know the result that die attach quality of Au/Sn eutectic bonding presented the thermal resistance of about 3.5K/W. It was much better than those of Ag paste and solder paste presented the thermal resistance of about 11.5${\~}$14.2K/W and 4.4${\~}$4.6K/W, respectively.

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저압 배선선로의 과부하 및 단락사고 발생시 전선의 열해석에 관한 연구 (A Study on the Thermal Analysis for Electrical Wire in Overload and Short of Low Voltage Wiring)

  • 이상호;오홍석
    • 한국화재소방학회논문지
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    • 제16권3호
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    • pp.56-60
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    • 2002
  • 최근 전계-열계해석 소프트웨어의 발전에 힘입어 전계-열계 해석 이론을 바탕으로 컴퓨터 시뮬레이션에 의한 전기화재의 정확한 원인분석과 조사가 체계적으로 연구되고 있으나, 매우 미흡한 실정이다. 따라서 본 논문에서는 국내 L사 제품(600V, VVF)의 전선을 모델로 하여 과부하 및 단락사고시 발생되는 전류 크기에 따른 전선의 열해석을 전계-열계 유한요소법(Flux2D)을 통하여 컴퓨터 시뮬레이션 하고자 한다.

Image Correction Method for Uncooled IR TECless Detector with Non-linear characteristics due to Temperature Change

  • Shin, Jung-Ho;Ye, Seong-Eun;Kim, Bo-Mee;Park, Chan
    • 한국컴퓨터정보학회논문지
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    • 제22권10호
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    • pp.19-26
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    • 2017
  • In this paper, we propose an efficient image equipment implementation for the detector characteristics of various detectors by analyzing un-cooled thermal detector that exhibits nonlinear changes due to external temperature effects. First, we explain Thermal Electric Cooler for un-cooled detector temperature control system and Non-image correction methode for IR system. Second, we present the results of a study on an efficient control technique that can minimize the deterioration of image quality by controlling a un-cooled thermal detector without a thermal electric cooler(TEC) inside. Third, we suggest Image Correction Methods for Uncooled IR TECless Detector with Non-linear characteristics due to Temperature Change. So, we analyze and present the results of Image correction methods for various un-cooled thermal detector.

전력용 반도체소자(IGBT)의 모델링에 의한 열적특성 시뮬레이션 (Modeling and Thermal Characteristic Simulation of Power Semiconductor Device (IGBT))

  • 서영수;백동현;조문택
    • 한국화재소방학회논문지
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    • 제10권2호
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    • pp.28-39
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    • 1996
  • A recently developed electro-thermal simulation methodology is used to analyze the behavior of a PWM(Pulse-Width-Modulated) voltage source inverter which uses IGBT(Insulated Gate Bipolar Transistor) as the switching devices. In the electro-thermal network simulation methdology, the simulator solves for the temperature distribution within the power semiconductor devices(IGBT electro-thermal model), control logic circuitry, the IGBT gate drivers, the thermal network component models for the power silicon chips, package, and heat sinks as well as the current and voltage within the electrical network. The thermal network describes the flow of heat form the chip surface through the package and heat sink and thus determines the evolution of the chip surface temperature used by the power semiconductor device models. The thermal component model for the device silicon chip, packages, and heat sink are developed by discretizing the nonlinear heat diffusion equation and are represented in component from so that the thermal component models for various package and heat sink can be readily connected to on another to form the thermal network.

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Studies on magneto-electro-elastic cantilever beam under thermal environment

  • Kondaiah, P.;Shankar, K.;Ganesan, N.
    • Coupled systems mechanics
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    • 제1권2호
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    • pp.205-217
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    • 2012
  • A smart beam made of magneto-electro-elastic (MEE) material having piezoelectric phase and piezomagnetic phase, shows the coupling between magnetic, electric, thermal and mechanical under thermal environment. Product properties such as pyroelectric and pyromagnetic are generated in this MEE material under thermal environment. Recently studies have been published on the product properties (pyroelectric and pyromagnetic) for magneto-electro-thermo-elastic smart composite. Hence, the magneto-electro-elastic beam with different volume fractions, investigated under uniform temperature rise is the main aim of this paper, to study the influence of product properties on clamped-free boundary condition, using finite element procedures. The finite element beam is modeled using eight node 3D brick element with five nodal degrees of freedom viz. displacements in the x, y and z directions and electric and magnetic potentials. It is found that a significant increase in electric potential observed at volume fraction of $BaTiO_3$, $v_f$ = 0.2 due to pyroelectric effect. In-contrast, the displacements and stresses are not much affected.