• Title/Summary/Keyword: electro thermal

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Electro-Thermal Characteristics of Hole-type Phase Change Memory (Hole 구조 상변화 메모리의 전기 및 열 특성)

  • Choi, Hong-Kyw;Jang, Nak-Won;Kim, Hong-Seung;Lee, Seong-Hwan;Yi, Dong-Young
    • Journal of Advanced Marine Engineering and Technology
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    • v.33 no.1
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    • pp.131-137
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    • 2009
  • In this paper, we have manufactured hole type PRAM unit cell using phase change material $Ge_2Sb_2Te_5$. The phase change material $Ge_2Sb_2Te_5$ was deposited on hole of 500 nm size using sputtering method. Reset current of PRAM unit cell was confirmed by measuring R-V characteristic curve. Reset current of manufactured hole type PRAM unit cell is 15 mA, 100 ns. And electro and thermal characteristics of hole type PRAM unit cell were analyzed by 3-D finite element analysis. From simulation temperature of PRAM unit cell was $705^{\circ}C$.

Study of Electro-Optical Characteristics on Photoalignment TN Cell using a High Thermal Photopolymer (고내열성 광폴리머 표면을 이용한 광배향 TN 셀의 전기광학 특성의 연구)

  • Lee, Whee-Won;Hwang, Jeoung-Yeon;Nam, Ki-Hyung;Lee, Myun-Gil;Suh, Dong-Hack;Seo, Dae-Shik
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.05a
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    • pp.210-213
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    • 2004
  • We synthesized photoalignment material of high thermal resistance with hydroxyl aromatic polyimide, and studied the liquid crystal (LC) aligning capabilities on the photopolymer layers. Also, electro-optical (EO) performances for the twisted-nematic (TN)-liquid crystal display (LCD) photoaligned with linearly polarized UV exposure were investigated. A good LC alignment with UV exposure on the photopolymer surface can be obtained. However, the low pretilt angles were obtained below $1^{\circ}$. The Voltage-transmittance (V-T) curve without backflow bounce in the photoaligned TN cell with UV exposure was observed. The response time of photoaligned TN cell was measured about 24 ms. Finally, The photoaligned TN cell has few hysteresis, and shows the residual DC voltage that is less.

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Transient wave propagation in piezoelectric hollow spheres subjected to thermal shock and electric excitation

  • Dai, H.L.;Wang, X.
    • Structural Engineering and Mechanics
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    • v.19 no.4
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    • pp.441-457
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    • 2005
  • An analytical method is presented to solve the problem of transient wave propagation in a transversely isotropic piezoelectric hollow sphere subjected to thermal shock and electric excitation. Exact expressions for the transient responses of displacements, stresses, electric displacement and electric potentials in the piezoelectric hollow sphere are obtained by means of Hankel transform, Laplace transform, and inverse transforms. Using Hermite non-linear interpolation method solves Volterra integral equation of the second kind involved in the exact expression, which is caused by interaction between thermo-elastic field and thermo-electric field. Thus, an analytical solution for the problem of transient wave propagation in a transversely isotropic piezoelectric hollow sphere is obtained. Finally, some numerical results are carried out, and may be used as a reference to solve other transient coupled problems of thermo-electro-elasticity.

Thermal properties and mechanical properties of dielectric materials for thermal imprint lithography

  • Kwak, Jeon-Bok;Cho, Jae-Choon;Ra, Seung-Hyun
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.242-242
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    • 2006
  • Increasingly complex tasks are performed by computers or cellular phone, requiring more and more memory capacity as well as faster and faster processing speeds. This leads to a constant need to develop more highly integrated circuit systems. Therefore, there have been numerous studies by many engineers investigating circuit patterning. In particular, PCB including module/package substrates such as FCB (Flip Chip Board) has been developed toward being low profile, low power and multi-functionalized due to the demands on miniaturization, increasing functional density of the boards and higher performances of the electric devices. Imprint lithography have received significant attention due to an alternative technology for photolithography on such devices. The imprint technique. is one of promising candidates, especially due to the fact that the expected resolution limits are far beyond the requirements of the PCB industry in the near future. For applying imprint lithography to FCB, it is very important to control thermal properties and mechanical properties of dielectric materials. These properties are very dependent on epoxy resin, curing agent, accelerator, filler and curing degree(%) of dielectric materials. In this work, the epoxy composites filled with silica fillers and cured with various accelerators having various curing degree(%) were prepared. The characterization of the thermal and mechanical properties wasperformed by thermal mechanical analysis (TMA), thermogravimetric analysis (TGA), differential scanning calorimetry (DSC), rheometer, an universal test machine (UTM).

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Development and Design Verification of Thermal Control Subsystem for EOS-C Ver.3.0 Flight Model (EOS-C Ver.3.0 비행모델의 열제어계 개발 및 설계 검증)

  • Chang, Jin-Soo;Yang, Seung-Uk;Kim, Ee-Eul
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.40 no.10
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    • pp.872-881
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    • 2012
  • The Flight Model (FM) of a high-resolution electro-optical camera (EOS-C Ver.3.0), the mission payload of an Earth observation satellite, was successfully developed by Satrec Initiative. We designed it to give improved thermal representatives compared with the Structural-Thermal Model (STM) by optimizing the thermal characteristics based on the STM thermal vacuum test results. We developed the FM and verified the workmanship by performing the acceptance level thermal vacuum test. We also conducted the verification of its Thermal Mathematical Model (TMM) by the thermal balance test. As the result, it was confirmed that TMM faithfully represents the thermal characteristics of the EOS-C Ver.3.0 FM.

Growth of Graphene on Electro-polished Copper Foil by Thermal CVD

  • Jin, Xiaozhan;Kim, Sung-Jin;Seo, Eun-Kyoung;Boo, Doo-Wan;Lee, Jung-Ah;Hwang, Chan-Yong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.08a
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    • pp.410-410
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    • 2012
  • The continuous monolayer graphene was synthesized on electro-polished copper foil. Electro-polishing sticks off the coating layer of copper foil, which prevents the continuous graphene growth. The quality of continuous graphene is dependent on roughness of copper foil. Copper foil roughness could be controlled by changing polishing condition. The effects of working voltage (4-6 V) and time (30-70 sec) for electro-polishing were systematically examined. The change of surface roughness was checked with AFM.

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Light extraction efficiency enhancement on organic light-emitting device by microlens array attachment: a systematic approach

  • Hsu, Sheng-Chih;Chen, Kuan-Yu;Lin, Hoang-Yan;Lee, Jiun-Haw;Lin, Chung-Yu;Wei, Mao-Kuo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2006.08a
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    • pp.1819-1824
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    • 2006
  • A microlens arrays formed by thermal reflow method is attached to an OLED device and the light extraction efficiency which includes luminance and power information is determined by adjusting the area ratio and the height ratio.

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Chemical Vapor Deposition Polymerization of Poly(arylenevinylene)s and Applications to Nanoscience

  • Joo, Sung-Hoon;Lee, Chun-Young;Kim, Kyung-kon;Lee, Ki-Ryong;Jin, Jung-Il
    • Bulletin of the Korean Chemical Society
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    • v.27 no.2
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    • pp.169-184
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    • 2006
  • A review is made on the chemical vapor deposition polymerization (CVDP) of insoluble and infusible poly(arylenevinylene)s and its applications to nanoscience. Poly(p-phenylenevinylene) (PPV), poly(naphthylenevinylene)s, poly(2,5-thinenylenevinylene) (PTV), and other homologous polymers containing oligothiophenes could be prepared by the CVDP method in the form of films, tubes, and fibers of nano dimensions. They would be readily converted to graphitic carbons of different structures by thermal treatment. Field emission FE) of carbonized PPV nanotubes, photoconductivity of carbonized PPV/PPV bilayer nanotubes and nanofilms also were studied.

Low Dimensional Electro-optic Properties of Ferroelectric Polymer Films (강유전 고분자 박막의 저차원 전기광학 특성)

  • Park, Chul-Woo;Jung, Chi-Sup
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.27 no.3
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    • pp.184-188
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    • 2014
  • The electro-optic properties in Langmuir Blodgett films of poly (vinylidene fluoride trifluoroethylene) are investigated in the crossover region between two and three dimensions. The absence of finite size effect is observed in the films thinner than 20 nm, which confirms that these films are two dimensional ferroelectrics. The copolymer LB film of P(VDF-TrFE) exhibits the largest electro-optic response(26 pm/V) at 10 layer thickness. The cross-over behavior of electro-optic effect around the 10 layer thickness was discussed with the formation of nanomesa after thermal annealing.

Thermal and temporal stabilities of a electro-optic coefficient $\gamma_{33}$ in a PI-SOT nonlinear polymer thin film (고분자 박막인 PI-SOT의 전기광학계수 $\gamma_{33}$의 열적 . 시간적 안정성)

  • Jeong, Youn-Hong;Jo, Jae-Heung;Chang, Soo;Kim, Tae;lee, Kwang-Sup
    • Korean Journal of Optics and Photonics
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    • v.10 no.3
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    • pp.188-194
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    • 1999
  • We synthesized the nonlinear optical (NLO) PI-SOT(polyimide system, 4-[N,N-bis(hydroxyethyl)amino-4,-($\beta$-cyano-$\beta$-methylsulfonyl)vinyl]azobenzene) polymer with high electro-optic coefficients as well as good thermal and temporal stabilities of the elector-optic coefficient ${\gamma}_33$ by the simple Mitsunobu reaction. By using the simple reflection method of C. C. Teng, we measured the thermal and temporal stabilities of the electro-optic coefficient ${\gamma}_33$ of corona-poled PI-SOT polymer at the wavelength of 632.8 nm and 852 nm, respectively. At the temperature of $20^{\circ}C$, the electro-optic coefficient ${\gamma}_33$ of corona-poled PI-SOT polymer were 25.12 pm/V at the wavelength of 632.8 nm and 5.40 pm/V at the wavelength of 852 nm. These values were highly stabilized for more than 60 days at 2$0^{\circ}C$ and stabilized within 6% for more than 10 hours at $100^{\circ}C$.

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