• Title/Summary/Keyword: electro thermal

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Effects of Package Induced Stress on MEMS Device and Its Improvements (패키징으로 인한 응력이 MEMS 소자에 미치는 영향 분석 및 개선)

  • Choa Sung-Hoon;Cho Yong Chul;Lee Moon Chul
    • Journal of the Korean Society for Precision Engineering
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    • v.22 no.11 s.176
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    • pp.165-172
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    • 2005
  • In MEMS (Micro-Electro-Mechanical System), packaging induced stress or stress induced structure deformation becomes increasing concerns since it directly affects the performance of the device. In the decoupled vibratory MEMS gyroscope, the main factor that determines the yield rate is the frequency difference between the sensing and driving modes. The gyroscope, packaged using the anodic bonding at the wafer level and EMC (epoxy molding compound) molding, has a deformation of MEMS structure caused by thermal expansion mismatch. This effect results in large distribution in the frequency difference, and thereby a lower yield rate. To improve the yield rate we propose a packaged SiOG (Silicon On Glass) process technology. It uses a silicon wafer and two glass wafers to minimize the wafer warpage. Thus the warpage of the wafer is greatly reduced and the frequency difference is more uniformly distributed. In addition. in order to increase robustness of the structure against deformation caused by EMC molding, a 'crab-leg' type spring is replaced with a semi-folded spring. The results show that the frequency shift is greatly reduced after applying the semi-folded spring. Therefore we can achieve a more robust vibratory MEMS gyroscope with a higher yield rate.

Characterization of Electrostrictive Polyurethane Films for Micro-Actuators (전기왜곡성 폴리우레탄 엑츄에이터의 특성 평가)

  • Jeong, Eun-Soo;Park, Han-Soo;Jeong, Hae-Do;Jo, Nam-Ju;Jae, Woo-Seong
    • Journal of the Korean Society for Precision Engineering
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    • v.19 no.4
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    • pp.161-167
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    • 2002
  • For the purpose of applying to micro-actuator, thermal properties and displacement of electrostrictive polyurethane(PU) elastomers have been measured. In order to understand an effect of PU component, crosslinking agent are controlled by 0.5 wt% and 1 wt%. DMPA and anther chain extenders were used. PU sample that chain extenders are DMPA is added NaOH for comprehension of effect of ionic groups. The deposited electrode sire on PU films is equal to acrylic holder size when the displacement was measured. Dynamic response according to frequency, displacement and recovery time according to PU thickness were measured. 1 wt% crosslinking agent contents PU samples have higher displacement and lower recovery time than 0.5 wt% crosslinking agent contents PU. If the PU thickness is increased, the actuating voltage for generating of same displacement is increased, too.

Study on Reactive Non-thermal Plasma Process combined with Metal Oxide Catalyst for Removal of Dilute Trichloroethylene

  • Han Sang-Bo;Oda Tetsuji;Park Jae-Youn;Park Sang-Hyun;Koh Hee-Seok
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.3
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    • pp.292-300
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    • 2006
  • In order to improve energy efficiency in the dilute trichloroethylene removal using the nonthermal plasma process, the barrier discharge treatment combined with manganese dioxide was experimentally studied. Reaction kinetics in this process was studied on the basis of final byproducts distribution. Decomposition efficiency was improved to about $99\;\%$ at the specific energy of 40 J/L with passing through manganese dioxide. C=C ${\pi}$ bond cleavage of TCE substances gave DCAC, which has the single bond of C-C through oxidation reaction during the barrier discharge plasma treatment. Those DCAC were broken easily in the subsequent catalytic reaction due to the weak bonding energy about $3{\sim}4\;eV$ compared with the double bonding energy in TCE molecules. Oxidation byproducts of DCAC and TCAA from TCE decomposition are generated from the barrier discharge plasma treatment and catalytic surface chemical reaction, respectively. Complete oxidation of TCE into COx is required to about 400 J/L, but $CO_2$ selectivity remains about $60\;\%$.

Characterization of Inkjet-Printed Silver Patterns for Application to Printed Circuit Board (PCB)

  • Shin, Kwon-Yong;Lee, Minsu;Kang, Heuiseok;Kang, Kyungtae;Hwang, Jun Young;Kim, Jung-Mu;Lee, Sang-Ho
    • Journal of Electrical Engineering and Technology
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    • v.8 no.3
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    • pp.603-609
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    • 2013
  • In this paper, we describe the analysis of inkjet-printed silver (Ag) patterns on epoxy-coated substrates according to several reliability evaluation test method guidelines for conventional printed circuit boards (PCB). To prepare patterns for the reliability analysis, various regular test patterns were created by Ag inkjet printing on flame retardant 4 (FR4) and polyimide (PI) substrates coated with epoxy for each test method. We coated the substrates with an epoxy primer layer to control the surface energy during printing of the patterns. The contact angle of the ink to the coated epoxy primer was $69^{\circ}$, and its surface energy was 18.6 $mJ/m^2$. Also, the substrate temperature was set at $70^{\circ}C$. We were able to obtain continuous line patterns by inkjet printing with a droplet spacing of $60{\mu}m$. The reliability evaluation tests included the dielectric withstanding voltage, adhesive strength, thermal shock, pressure cooker, bending, uniformity of line-width and spacing, and high-frequency transmission loss tests.

Physical Characteristics of Polycrystalline 3C-SiC Thin Films Grown by LPCVD (LPCVD로 성장된 다결정 3C-SiC 박막의 물리적 특성)

  • Chung Gwiy-Sang;Kim Kang-San
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.19 no.8
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    • pp.732-736
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    • 2006
  • This paper describes the physical characterizations of polycrystalline 3C-SiC thin films heteroepitaxially grown on Si wafers with thermal oxide, In this work, the 3C-SiC film was deposited by LPCVD (low pressure chemical vapor deposition) method using single precursor 1, 3-disilabutane $(DSB:\;H_3Si-CH_2-SiH_2-CH_3)\;at\;850^{\circ}C$. The crystallinity of the 3C-SiC thin film was analyzed by XPS (X-ray photoelectron spectroscopy), XRD (X-ray diffraction) and FT-IR (fourier transform-infrared spectometers), respectively. The surface morphology was also observed by AFM (atomic force microscopy) and voids or dislocations between SiC and $SiO_2$ were measured by SEM (scanning electron microscope). Finally, residual strain was investigated by Raman scattering and a peak of the energy level was less than other type SiC films, From these results, the grown poly 3C-SiC thin film is very good crystalline quality, surface like mirror, and low defect and strain. Therefore, the polycrystalline 3C-SiC is suitable for harsh environment MEMS (Micro-Electro-Mechanical-Systems) applications.

A Comparative Study of Transistor and RC Pulse Generators for Micro-EDM of Tungsten Carbide

  • Jahan, Muhammad Pervej;Wong, Yoke San;Rahman, Mustafizur
    • International Journal of Precision Engineering and Manufacturing
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    • v.9 no.4
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    • pp.3-10
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    • 2008
  • Micro-electrical discharge machining (micro-EDM) is an effective method for machining all types of conductive materials regardless of hardness. Since micro-EDM is an electro-thermal process, the energy supplied by the pulse generator is an important factor in determining the effectiveness of the process. In this study, an investigation was conducted on the micro-EDM of tungsten carbide (WC) to compare the performance of transistor and resistance/capacitance (RC) pulse generators in obtaining the best quality micro-hole. The performance was measured by the machining time, material removal rate, relative tool wear ratio, surface quality, and dimensional accuracy. The RC generator was more suited for minimizing the pulse energy, which is a requirement for fabricating micro-parts. The smaller-sized debris formed by the low-discharge energy of RC micro-EDM could be easily flushed away from the machined zone, resulting in a surface free of burrs and resolidified molten metal. The RC generator also required much less time to obtain the same quality micro-hole in WC. Therefore, RC generators are better suited for fabricating micro-structures, producing good surface quality and better dimensional accuracy than the transistor generators, despite their higher relative tool wear ratio.

A Method of Reducing a Tolerance of a Shunt Resistor for Balance of the Battery Cell to Improve a Precision of BMS (BMS 정밀도 향상을 위한 셀 밸런싱용 션트 고정저항의 허용오차 저감 방법)

  • Kim, Eun-Min;Son, Mi-Ra;Kang, Chang-Yong
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.67 no.8
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    • pp.1055-1061
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    • 2018
  • Recently, due to the rapid development of electric vehicle and energy storage system, it is emphasized for battery management system to be needed and to be improved. BMS carries out various movement for optimization the use of the energy and safe use of secondary battery, these movement of BMS start at high wattage shunt fixed resistor which performs a function for detecting current among the BMS components. In addition, for the safe operation of secondary battery, the reliability of current voltage variation detected from shunt should be secured, and for corresponding characteristics, the quality of Temperature coefficient of resistance for BMS shunt and the quality of Thermo electromotive force all must be excellent. For these reasons, this study comes up with the stabilization plan for thermo electromotive force and temperature coefficient of resistance of BMS shunt resistor which is key to secondary battery operation.

Study on Fabrication of Highly Ordered Nano Master by Using Anodic Aluminum Oxidation (AAO를 이용한 나노 마스터 제작에 관한 연구)

  • Kwon, J.T.;Shin, H.G.;Seo, Y.H.;Kim, B.H.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2007.10a
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    • pp.162-165
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    • 2007
  • AAO(Anodic Aluminum Oxidation) method has been known that it is practically useful for the fabrication of nano-structures and makes it possible to fabricate the highly ordered nano masters on large surface and even on the 2.5 or 3D surface at low cost comparing to the expensive e-beam lithography or the conventional silicon processing. In this study, by using the multi-step anodizing and etching processes, highly ordered nano patterned master with concave shapes was fabricated. By varying the processing parameters, such as initial matter and chemical conditions; electrical and thermal conditions; time scheduling; and so on, the size and the pitch of the nano pattern can be controlled. Consequently, various alumina/aluminum nano structures can be easily available in any size and shape by optimized anodic oxidation in various aqueous acids. In order to replicate nano patterned master, the resulting good filled uniform nano molded structure through electro-forming process shows the validity of the fabricated nano pattern masters.

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Development Trend of Membrane Filter Using Ceramic Fibers (세라믹 섬유를 이용한 멤브레인 필터의 연구개발 동향)

  • Kim, Deuk Ju;Lee, Jeong Woo;Nam, Sang Yong
    • Membrane Journal
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    • v.26 no.2
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    • pp.87-96
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    • 2016
  • Ceramic materials have attracted increasing attention in the last 10 years because of their high thermal stability and high permeation property compared with polymeric nanofiber membranes. Recently, novel nanofiber ceramic membranes with high porosity and flux have been fabricated from metal oxide nanofibers. To improve the performance of ceramic membranes and reduce their costs, a new ceramic membrane with a selective separation layer made of nanofibers was fabricated by electrospinning process and modification process for filtration system. This review summarizes the research trends for the development of ceramic nanofiber membrane over the past few years.

A Study on the Optimization of Heat Dissipation in Flip-chip Package (플립칩 패키지의 열소산 최적화 연구)

  • Park, Chul Gyun;Lee, Tae Ho;Lee, Tae Kyoung;Jeong, Myung Yung
    • Journal of the Microelectronics and Packaging Society
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    • v.20 no.3
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    • pp.75-80
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    • 2013
  • According to advance of electronic packaging technology, electronic package becomes smaller. Miniaturization of package causes the temperature rise of package. This can degrade life of electronic device and generate the failure of electronic system. In this study, we proposed a new semi-embedded structure with micro pattern for maximizing heat dissipation. A proposed structure showed the characteristics which have maximum temperature lower than $20^{\circ}C$ compared with conventional structure. And also, in view of thermal stress and strain, our structure showed a remarkably low value compared with other ones. We expect that the new structure proposed in this work can be applied to an flip-chip package of the future.