• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.35 no.1
• /
• pp.50-57
• /
• 2022

Reliability of CMOS has been severed under aggressive device scaling. Conventional technologies such as lightly doped drain (LDD) and forming gas annealing (FGA) have been applied for better device reliability, but further advances are modest. Alternatively, electro-thermal annealing (ETA) which utilizes Joule heat produced by electrodes in a MOSFET, has been newly introduced for gate dielectric curing. However, concerns about mechanical stability during the electro-thermal annealing, have not been discussed, yet. In this context, this paper demonstrates the mechanical stability of nanosheet FET during the electro-thermal annealing. The effect of mechanical stresses during the electro-thermal annealing was investigated with respect to device design parameters.

• Journal of Mechanical Science and Technology
• /
• v.19 no.2
• /
• pp.496-504
• /
• 2005

The thermal and mechanical properties of an electro-slag cast steel of a similar chemical composition with an AISI-6F2 steel are investigated and compared with a forged AISI-6F2 steel. AISI-6F2 is a hot-working tool steel. Electro-slag casting (ESC) is a method of producing ingots in a water-cooled metal mold by the heat generated in an electrically conductive slag when current passes through a consumable electrode. The ESC method provides the possibility of producing material for the high quality hot-working tools and ingots directly into a desirable shape. In the present study, the thermal and mechanical properties of yield strength, tensile strength, hardness, impact toughness, wear resistance, thermal fatigue resistance, and thermal shock resistance for electro-slag cast and forged steel are experimentally measured for both annealed and quenched and tempered heat treatment conditions. It has been found that the electro-slag cast steel has comparable thermal and mechanical properties to the forged steel.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.35 no.3
• /
• pp.246-254
• /
• 2022

Localized heat can be generated using electrically conductive word-lines built into a 3D NAND flash memory string. The heat anneals the gate dielectric layer and improves the endurance and retention characteristics of memory cells. However, even though the electro-thermal annealing can improve the memory operation, studies to investigate material failures resulting from electro-thermal stress have not been reported yet. In this context, this paper investigated how applying electro-thermal annealing of 3D NAND affected mechanical stability. Hot-spots, which are expected to be mechanically damaged during the electro-thermal annealing, can be determined based on understanding material characteristics such as thermal expansion, thermal conductivity, and electrical conductivity. Finally, several guidelines for improving mechanical stability are provided in terms of bias configuration as well as alternative materials.

• JSTS:Journal of Semiconductor Technology and Science
• /
• v.16 no.3
• /
• pp.367-374
• /
• 2016

This paper presents an electro-thermal modeling of an amorphous silicon (a-Si) uncooled microbolometer. This modeling provides a comprehensive solution for simulating the electro-thermal characteristics of the fabricated microbolometer and enables electro-thermal co-simulation between MEMS and CMOS integrated circuits. To validate this model, three types of uncooled microbolometers were fabricated using a post-CMOS surface micromachining process. The simulation results show a maximum discrepancy of 2.6% relative to the experimental results.

• Journal of the Microelectronics and Packaging Society
• /
• v.12 no.4 s.37
• /
• pp.331-338
• /
• 2005

The rapid advances in high power light sources and arrays as encountered in incandescent lamps have induced dramatic increases in die heat flux and power consumption at all levels of high power LED packaging. The lifetime of such devices and device arrays is determined by their temperature and thermal transients controlled by the powering and cooling, because they are usually operated under rough environmental conditions. The reliability of packaged electronics strongly depends on the die attach quality, because any void or a small delamination may cause instant temperature increase in the die, leading sooner or later to failure in the operation. Die attach materials have a key role in the thermal management of high power LED packages by providing the low thermal resistance between the heat generating LED chips and the heat dissipating heat slug. In this paper, thermal transient characteristics of die attach in high power LED package have been studied based on the thermal transient analysis using the evaluation of the structure function of the heat flow path. With high power LED packages fabricated by die attach materials such as Ag paste, solder paste and Au/Sn eutectic bonding, we have demonstrated characteristics such as cross-section analysis, shear test and visual inspection after shear test of die attach and how to detect die attach failures and to measure thermal resistance values of die attach in high power LED package. From the structure function oi the thermal transient characteristics, we could know the result that die attach quality of Au/Sn eutectic bonding presented the thermal resistance of about 3.5K/W. It was much better than those of Ag paste and solder paste presented the thermal resistance of about 11.5${\~}$14.2K/W and 4.4${\~}$4.6K/W, respectively.

• Fire Science and Engineering
• /
• v.16 no.3
• /
• pp.56-60
• /
• 2002

Recently, with the growth of software for electro-thermal analysis, it has been studied the precise analysis and investigation of cause for the electrical fire using computer simulation on the basis of theory for electro-thermal analysis. But it is very lacking for the precise analysis and investigation of cause for the electrical fire. In this paper, we have simulated the thermal analysis for electrical wire according to the value of current in a overload and a short with the electrical wire of the L's company product(600 V VVF) using the electro-thermal finite element method(Flux2D).

• Proceedings of the Korean Society of Precision Engineering Conference
• /
• 2007.06a
• /
• pp.315-316
• /
• 2007

• Journal of the Korea Society of Computer and Information
• /
• v.22 no.10
• /
• pp.19-26
• /
• 2017

In this paper, we propose an efficient image equipment implementation for the detector characteristics of various detectors by analyzing un-cooled thermal detector that exhibits nonlinear changes due to external temperature effects. First, we explain Thermal Electric Cooler for un-cooled detector temperature control system and Non-image correction methode for IR system. Second, we present the results of a study on an efficient control technique that can minimize the deterioration of image quality by controlling a un-cooled thermal detector without a thermal electric cooler(TEC) inside. Third, we suggest Image Correction Methods for Uncooled IR TECless Detector with Non-linear characteristics due to Temperature Change. So, we analyze and present the results of Image correction methods for various un-cooled thermal detector.

• Fire Science and Engineering
• /
• v.10 no.2
• /
• pp.28-39
• /
• 1996

A recently developed electro-thermal simulation methodology is used to analyze the behavior of a PWM(Pulse-Width-Modulated) voltage source inverter which uses IGBT(Insulated Gate Bipolar Transistor) as the switching devices. In the electro-thermal network simulation methdology, the simulator solves for the temperature distribution within the power semiconductor devices(IGBT electro-thermal model), control logic circuitry, the IGBT gate drivers, the thermal network component models for the power silicon chips, package, and heat sinks as well as the current and voltage within the electrical network. The thermal network describes the flow of heat form the chip surface through the package and heat sink and thus determines the evolution of the chip surface temperature used by the power semiconductor device models. The thermal component model for the device silicon chip, packages, and heat sink are developed by discretizing the nonlinear heat diffusion equation and are represented in component from so that the thermal component models for various package and heat sink can be readily connected to on another to form the thermal network.

• Coupled systems mechanics
• /
• v.1 no.2
• /
• pp.205-217
• /
• 2012

A smart beam made of magneto-electro-elastic (MEE) material having piezoelectric phase and piezomagnetic phase, shows the coupling between magnetic, electric, thermal and mechanical under thermal environment. Product properties such as pyroelectric and pyromagnetic are generated in this MEE material under thermal environment. Recently studies have been published on the product properties (pyroelectric and pyromagnetic) for magneto-electro-thermo-elastic smart composite. Hence, the magneto-electro-elastic beam with different volume fractions, investigated under uniform temperature rise is the main aim of this paper, to study the influence of product properties on clamped-free boundary condition, using finite element procedures. The finite element beam is modeled using eight node 3D brick element with five nodal degrees of freedom viz. displacements in the x, y and z directions and electric and magnetic potentials. It is found that a significant increase in electric potential observed at volume fraction of $BaTiO_3$, $v_f$ = 0.2 due to pyroelectric effect. In-contrast, the displacements and stresses are not much affected.