• The Korean Journal of Ceramics
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• v.3 no.4
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• pp.263-268
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• 1997

RuO$_3$ thin films were deposited on Si(100) substrate at low temperatures by hot-wall metalorganic chemical vapor deposition. Bis(cyclopentadienyl) ruthenium, Ru$(C_5H_5)_2$, was used as the precursor RuO$_2$single phase was obtained at a low deposition temperature of 25$0^{\circ}C$ and the crystallinity of RuO$_2$thin films improved with increasing deposition temperature. RuO$_2$thin films grow perpendicularly to the substrate and show the columnar structure. The grain size of RuO$_2$films drastically increases with increasing the deposition temperature. The resistivity of the 180 nm-thick RuO$_2$thin films deposited at 27$0^{\circ}C$ was 136 $\mu$$\Omega$-cm and increased with decreasing film thickness. SrBi$_2Ta_2O_4$ thin films deposited by rf magnetron sputtering on the RuO$_2$bottom electrodes showed a fatigue-free characteristics up to ~10$^10$ cycles under 5 V bipolar square pulses and the remanent polarization, 2 P$_r$ and the coercive field, 2 E, were 5.2$\mu$C/$\textrm{cm}^2$ and 76.0 kV/cm, respectively, for an applied voltage of 5 V The leakage current density was about 7.0$\times$10$^{-6}$ A/$\textrm{cm}^2$ at 150 kV/cm.

• Journal of the Institute of Electronics Engineers of Korea SP
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• v.39 no.4
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• pp.418-428
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• 2002

In this paper, we propose a motion-adaptive de-interlacing method using motion compensated interpolation. In a conventional motion compensated method, a simple pre-filter such as line averaging is applied to interpolate missing lines before the motion estimation. However, this method causes interpolation error because of inaccurate motion estimation and compensation. In the proposed method, EBMF(Edge Based Median Filter) as a pre-filter is applied, and new matching method, which uses two same-parity fields and opposite-parity field as references, is proposed. For further improvement, motion correction filter is proposed to reduce the interpolation error caused by incorrect motion. Simulation results show that the proposed method provides better performance than existing methods.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.13 no.6
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• pp.272-278
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• 2003

$Bi_4Ti_3O_{12}$ (BIT) and $(Bi_{3.25}La_{0.75})(Ti_{2.97}V_{0.03})O_{12}$ (BLTV) thin films were deposited on ITO/glass substrates by metal organic chemical vapor deposition (MOCVD) using ultrasonic spraying. After deposition of the films in oxygen atmosphere for 30 min, the films were heated by rapid thermal annealing (RTA) method, especially direct insertion, at various temperatures. The films were investigated on phase formation temperature, microstructure and electrical properties. From x-ray diffraction (XRD) patterns, the perovskite phase formation temperature of BLTV thin film was about $600^{\circ}C$ which was lower than that of BIT, $650^{\circ}C$. The leakage current of the BLTV thin film was measured to be $1.52\times 10^{-9}$A/$cm^2$ at an applied voltage of 1 V. The remanent polarization (Pr) and coercive field (Ec) values of the BLTV film deposited at $650^{\circ}C$ were $5.6\muC/cm^2$ and 96.5 kV/cm, respectively.

• Proceedings of the Korean Institute Of Construction Engineering and Management
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• 2004.11a
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• pp.20-25
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• 2004

On July $18^{th}$, 2003, Incheon International Airport Corporation(lIAC) signed the Construction Management Service Contract with KIDS consortium (composed of Kun-Won Eng., ITM Corp, Do-Hwa Eng, Space Croup) for the $2^{nd}$ phase construction protect consists of landfill, $\#3$ runway, remote Concourse, IAT, BHS, cargo terminal, etc scheduled to be finished by the end of 2008. KIDS dispatched qualified engineers to the Construction Management Division of IIAC for providing technical assistance to IIAC members to pursue project goals in tulle. within budget with appropriate quality level to build one of leading hul] airports for the Northeast Asia legion in the $21^{st}$ century. The work scope covers upgrading various project procedures and related computer programs, cost and schedule control, design supervision for building design including support systerns such as HVAC, fire protection, elevators and escalators, boarding bridges, electrical and communication systems, and technical support for IAT/BHS, QA/QC, field test and inspection, start-up and commissioning, etc. The purpose of this paper is to introduce the major activities of the Construction Management Services performing at the IIA project for your reference.

• Journal of the Korea Convergence Society
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• v.9 no.5
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• pp.1-6
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• 2018

In smart grid an accurate load forecasting is crucial in planning resources, which aids in improving its operation efficiency and reducing the dynamic uncertainties of energy systems. Research in this area has included the use of shallow neural networks and other machine learning techniques to solve this problem. Recent researches in the field of computer vision and speech recognition, have shown great promise for Deep Neural Networks (DNN). To improve the performance of daily electric peak load forecasting the paper presents a new deep neural network model which has the architecture of two multi-layer neural networks being serially connected. The proposed network model is progressively pre-learned layer by layer ahead of learning the whole network. For both one day and two day ahead peak load forecasting the proposed models are trained and tested using four years of hourly load data obtained from the Korea Power Exchange (KPX).

• International Journal of Advanced Culture Technology
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• v.4 no.4
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• pp.45-50
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• 2016

This is a humanistic study to trace phenomena logically the comprehensive therapeutic mechanism of the human body which is coded by the smart emotion of the rated signal conveyed by the Rated Sijo. The Gestalt, which is structured in the form of therapeutic metastasis conveyed by sentences, is intended to embody the principle of human response. So, this researcher explored the metastatic structure toward Gestalt of original human being through the passage of foreground and background by ergonomic and chemical structure. In the meantime, this researcher focused on revealing the structure of the field of existence by the symbol system in which the therapeutic mechanism of the human body is embodied. As a result, the basic framework of Gestalt literary therapy, which contributes to the improvement of the Quality of Life metaphorized as a mechanism of the symbol system by the metastasis of literary therapy or the electrical operation of the human body. As a result, the human body as a conductor through literature has turned out to be an original Gestalt structure pursued by literature. In addition, it was analyzed that the human body would accept signals such as emotions and Rated Emotions planted in the sentence, and synapse them into the human physiological psycho analytical symbol system. Therefore, it has been confirmed possibility that human existent environment and trauma are separated from the whole universe can push fully implement therapeutic techniques toward totalization by a combination of literary devices, especially appropriate electric signal combination of the Rated Sijo.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.39 no.5
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• pp.1-7
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• 2002

Deep sub-micron bulk CMOS circuits require gate electrode materials such as metal silicide and titanium silicide for gate oxides. Many authors have conducted research to improve the quality of the sub-micron gate oxide. However, few have reported on the electrical quality and reliability of an ultra-thin gate. In this paper, we will recommend a novel shallow trench isolation structure and a two-step TiS $i_2$ formation process to improve the corner metal oxide semiconductor field-effect transistor (MOSFET) for sub-0.1${\mu}{\textrm}{m}$ VLSI devices. Differently from using normal LOCOS technology, deep sub-micron CMOS devices using the novel shallow trench isolation (STI) technology have unique "inverse narrow-channel effects" when the channel width of the device is scaled down. The titanium silicide process has problems because fluorine contamination caused by the gate sidewall etching inhibits the silicide reaction and accelerates agglomeration. To resolve these Problems, we developed a novel two-step deposited silicide process. The key point of this process is the deposition and subsequent removal of titanium before the titanium silicide process. It was found by using focused ion beam transmission electron microscopy that the STI structure improved the narrow channel effect and reduced the junction leakage current and threshold voltage at the edge of the channel. In terms of transistor characteristics, we also obtained a low gate voltage variation and a low trap density, saturation current, some more to be large transconductance at the channel for sub-0.1${\mu}{\textrm}{m}$ VLSI devices.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.31A no.12
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• pp.80-90
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• 1994

To develop VLSI of higher packing density with 0.5.mu.m gate length of less, semiconductor devices require shallow junction with higher doping concentration. the most common method to form the shallow junction is ion implantation, but in order to remove the implantation induced defect and activate the implanted impurities electrically, ion-implanted Si should be annealed at high temperature. In this annealing, impurities are diffused out and redistributed, creating deep PN junction. These make it more difficult to form the shallow junction. Accordingly, to miimize impurity redistribution, the thermal-budget should be kept minimum, that is. RTA needs to be used. This paper reports results of the diffusion characteristics of PSG film by varying Phosphorus weitht %/ Times and temperatures of RTA. From the SIMS.ASR.4-point probe analysis, it was found that low sheet resistance below 100 .OMEGA./ㅁand shallow junction depths below 0.2.mu.m can be obtained and the surface concentrations are measured by SIMS analysis was shown to range from 2.5*10$^{17}$ aroms/cm$^{3}$~3*10$^{20}$ aroms/cm$^{3}$. By depending on the RTA process of PSG film on Si, LDD-structured nMOSFET was fabricated. The junction depths andthe concentration of n-region were about 0.06.mu.m. 2.5*10$^{17}$ atom/cm$^{-3}$ , 4*10$^{17}$ atoms/cm$^{-3}$ and 8*10$^{17}$ atoms/cm$^{3}$, respectively. As for the electrical characteristics of nMOS with phosphorus junction for n- region formed by RTA, it was found that the characteristics of device were improved. It was shown that the results were mainly due to the reduction of electric field which decreases hot carriers.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.6
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• pp.53-58
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• 2004

A novel UV sensor was manufactured and characterized using evanescent field coupling between photochromic dye dispersed polymer waveguide and side polished fiber. The spiroxazine (photochromic dye) dispersed polymer was used as planar waveguides. The resonant wavelength was shifted owing to refractive index variation of planar waveguide on exposed UV because of its photo-functional properties. The sensitivities are $1.21{\mu}W/mw$ and $2.75{\mu}W/mw$ when UV intensities increased after exposure times were fixed at 3 seconds and 5 seconds, respectively. Output optical power according to UV intensity increases and saturation time decreases as the intensity of UV radiations increases.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.15 no.12 s.91
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• pp.1123-1130
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• 2004

In this paper, a technique is presented f3r the design of a structurally simple narrow-band orthomode transducer (OMT) operating at 12/14 GHz frequency bands. The proposed OMT has such a structure that a horizontally polarized wave incident on the circular waveguide of the common port is directed to the rectangular waveguide of the straight port, while the vertically polarized wave is directed to the rectangular waveguide of the side port. Firstly methods are developed f3r designing individual parts of the OMT based on the waveguide theory and the theory of impedance matching. Secondly based on developed methods the whole OMT structure is designed using a commercial electromagnetic field analysis software. The validity of the proposed design technique is confirmed by fabricating and testing the designed OMT.