• Membrane Journal
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• v.25 no.6
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• pp.488-495
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• 2015

Aminated polyphenylene oxide (APPO) based on polyphenylene oxide (PPO) was synthesized using trimethylamine and chloromethyl ethyl ether. Then, the electro-physical properties of APPO membranes which were prepared from the 8 wt% APPO solution dissolved in chloroform were characterized. Contact angle was $44.4^{\circ}$, swelling degree was 37.9%. The typical electrical properties of ion exchange capacity and ion conductivity were 2.3 meq/g, 0.027 S/cm, respectively. And the single gas permeation experiments were performed by using the time-lag method for $N_2$, $O_2$, $CH_4$, $CO_2$, $SO_2$. For the acid gases of $CO_2$ and $SO_2$, their permeability were measured 20.7 and 511.5 barrers, respectively. In the case of selectivity, $CO_2/CH_4$, $CO_2/N_2$ and $SO_2/CO_2$ were measured 39.8, 42.2, 24.7, respectively.

• Journal of the Korean institute of surface engineering
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• v.39 no.3
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• pp.93-97
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• 2006

Polymer light emitting diodes (PLEDs) are expected to be commercialized as next generation displays by advantages of the fast response time, low driving voltage and easy manufacturing process for large sized flexible display. Generally, the electrical and optical properties of PLEDs are affected by the surface conditions of transparent electrode. The PLED devices with ITO/PEDOT:PSS/PVK/PFO-poss/LiF/Al structures were prepared by using the spin coating method. For this, PEDOT:PSS(poly(3,4-ethylenedioxythiophene):poly(styrene sulfolnate)) Al 4083 and PVK(N-vinylcabozole) were used as hole injection and transport layers. The PFO-poss(poly(9,9-dioctylfluorene)) was used as the emitting layer. The dependence of $O_2$ plasma treatment of ITO electrode on the electrical and optical properties of PLEDs were investigated. The sheet resistances increased slightly with an improved surface roughness of ITO electrode as the RF power increased during $O_2$ plasma treatment. The PLED devices prepared on the ITO/Glass substrates, which were plasma-treated at 40 watt in RF power for 30 seconds under 40 mtorr $O_2$ pressure, showed the maximum external emission efficiency of 0.86 lm/W and the maximum luminance of $250\;cd/m^2$, respectively. The CIE color coordinates are ranged $X\;=\;0.13{\sim}0.18$ and $Y\;=\;0.10{\sim}0.16$, showing blue color. emission.

• Korean Journal of Materials Research
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• v.19 no.1
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• pp.28-32
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• 2009

Silicon carbide (SiC) is a promising material for power device applications due to its wide band gap (3.26 eV for 4H-SiC), high critical electric field and excellent thermal conductivity. The Schottky barrier diode is the representative high-power device that is currently available commercially. A field plate edge-terminated 4H-SiC was fabricated using a lift-off process for opening the Schottky contacts. In this case, Ni/Ti dual-metal contacts were unintentionally formed at the edge of the Schottky contacts and resulted in the degradation of the electrical properties of the diodes. The breakdown voltage and Schottky barrier height (SBH, ${\Phi}_B$) was 107 V and 0.67 eV, respectively. To form homogeneous single-metal Ni/4H-SiC Schottky contacts, a deposition and etching method was employed, and the electrical properties of the diodes were improved. The modified SBDs showed enhanced electrical properties, as witnessed by a breakdown voltage of 635 V, a Schottky barrier height of ${\Phi}_B$=1.48 eV, an ideality factor of n=1.04 (close to one), a forward voltage drop of $V_F$=1.6 V, a specific on resistance of $R_{on}=2.1m{\Omega}-cm^2$ and a power loss of $P_L=79.6Wcm^{-2}$.

• Journal of Korean Tunnelling and Underground Space Association
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• v.25 no.2
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• pp.101-120
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• 2023

Electrical resistivity survey have been widely conducted at diverse scales, from a few centimeters for laboratory tests to kilometers for field tests. It measures electrical resistance through relationship of electric potential difference and current between two electrodes penetrated on the surface of medium, and eventually quantifies electrical resistivity known as inherent properties of the medium. In field or full-scale test, it assumes the electrodes as equivalent half-sphere electrodes that have a same surface area with different electrodes for ease of calculation because the contact area between electrode and medium is small and sufficient distance between two electrodes. However, small-scale laboratory test is significantly affected by the electrode geometries (penetrated depth, height, radius of electrode and distance between electrodes), which change the equipotential surface and electric current flow. Indeed, the electrode geometries may eventually cause a difference of electrical resistivity value. This study reviews the theoretical electrical resistance derived with various electrode geometries (half-sphere, cylinder, cylindrical with half-spherical tip, cylindrical with conical tip) and verifies the developed numerical module by comparing results with the theoretical electrical resistance. The distributions of electrical resistance around electrodes and among electrodes are analyzed. In addition, it is discussed how the electrical characteristic of cylindrical electrode with conical tip widely used in field test has effect on the electric current flow.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.429-429
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• 2007

For various applications of liquid crystal displays (LCDs), the uniform alignment of liquid crystal (LC) molecules on treated surfaces is significantly important. Generally, a rubbing method has been widely used to align the LC molecules on polyimide (PI) surfaces. Rubbed PI surfaces have suitable characteristics, such as uniform alignment. However, the rubbing method has some drawbacks, such as the generation of electrostatic charges and the creation of contaminating particles. Thus, we strongly recommend a non contact alignment technique for future generations of large high-resolution LCDs. Most recently, the LC aligning capabilities achieved by ultraviolet and ion-beam exposures which are non contact methods, on diamond-like carbon (DLC) inorganic thin film layers have been successfully studied because DLC thin films have a high mechanical hardness, a high electrical resistivity, optical transparency, and chemical inertness. In addition, nitrogen-doped DLC (NDLC) thin films exhibit properties similar to those of the DLC thin films and a higher thermal stability than the DLC thin films because C:N bonding in the NDLC thin filmsis stronger against thermal stress than C:H bonding in the DLC thin films. Our research group has already studied the NDLC thin films by an ion-beam alignment method. The $SiN_x$ thin films deposited by plasma-enhanced chemical vapor deposition are widely used as an insulation layer for a thin film transistor, which has characteristics similar to those of DLC inorganic thin films. Therefore, in this paper, we report on LC alignment effects and pretilt angle generation on a $SiN_x$, thin film treated by ion-beam irradiation for various N ratios

• Korean Journal of Materials Research
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• v.22 no.12
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• pp.664-668
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• 2012

ZnO nanorods were successfully fabricated on Zn foil by chemical bath deposition (CBD) method. The ZnO precursor concentration and immersion time affected the surface morphologies, structure, and electrical properties of the ZnO nanorods. As the precursor concentration increased, the diameter of the ZnO nanorods increased from ca. 50 nm to ca. 150 nm. The thicknesses of the ZnO nanorods were from ca. $1.98{\mu}m$ to ca. $2.08{\mu}m$. ZnO crystalline phases of (100), (002), and (101) planes of hexagonal wurtzite structure were confirmed by XRD measurement. The fabricated ZnO nanorods showed a photoluminescene property at 380 nm. Especially, the ZnO nanorods deposited for 6 h in solution with a concentration of 0.005M showed a stronger (101) peak than they did (100) or (002) peaks. In addition, these ZnO nanorods showed a good electrical property, with the lowest resistance among the four samples, because the nanorods were densely in contact and relatively without pores. Therefore, a ZnO nanorod substrate is useful as a highly sensitive biochip substrate to detect biomolecules using an electrochemical method.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.212-216
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• 1999

SiC(3C) photodiodes (PDs) were fabricated on p-type Si(111) substrates using chemical vapor deposition (CVD) technique by pyrolyzing tetramethylsilane (TMS) with $H_{2}$ carrier gas. Electrical properties of SiC(3C) were investigated by Hall measurement and current-voltage (I-V) characteristics. SiC(3C) layers exhibited n-type conductivity. Ohmic contact was formed by thermal evaporation Al metal through a shadow-mask. The optical gain $(G_{op})$ of the SiC(3C)/Si PD was measured as a function of the incident wavelength. For the analysis of the photovoltaic detection of the Sic(3C) n/p PD, the spectral response (SR) has calculated by using the electrical parameters of the SiC(3C) layer and the geometric structure of the PD. The peak response calculated for properly chosen parameters was about 0.75 near 550 nm. We expect a good photoresponse in the SiC(3C) heterostructure for the wavelength range of 400~600 nm. The SiC(3C) photodiode can detect blue and near ultraviolet (UV) radiation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.32-32
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• 2009

Silicon carbide (SiC) is a wide-bandgap semiconductor that has materials properties necessary for the high-power, high-frequency, high-temperature, and radiation-hard condition applications, where silicon devices cannot perform. SiC is also the only compound semiconductor material. on which a silicon oxide layer can be thermally grown, and therefore may fabrication processes used in Si-based technology can be adapted to SiC. So far, atomic force microscopy (AFM) has been extensively used to study the surface charges, dielectric constants and electrical potential distribution as well as topography in silicon-based device structures, whereas it has rarely been applied to SiC-based structures. In this work, we investigated that the local oxide growth on SiC under various conditions and demonstrated that an increased (up to ~100 nN) tip loading force (LF) on highly-doped SiC can lead a direct oxide growth (up to few tens of nm) on 4H-SiC. In addition, the surface potential and topography distributions of nano-scale patterned structures on SiC were measured at a nanometer-scale resolution using a scanning kelvin probe force microscopy (SKPM) with a non-contact mode AFM. The measured results were calibrated using a Pt-coated tip. It is assumed that the atomically resolved surface potential difference does not originate from the intrinsic work function of the materials but reflects the local electron density on the surface. It was found that the work function of the nano-scale patterned on SiC was higher than that of original SiC surface. The results confirm the concept of the work function and the barrier heights of oxide structures/SiC structures.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.2
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• pp.24-28
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• 2006

Electrochemical hydrogenation/dehydrogenation properties were studied for a single particle of a Mm-based(Mm : misch metal) hydrogen storage alloy($MmNi_{3.55}Co_{0.75}Mn_{0.4}Al_{0.3}$) for the anode of Ni-MH batteries. A carbon fiber microelectrode was manipulated to make electrical contact with an alloy particle, and the cyclic voltammetry and the galvanostatic charge/discharge experiments were performed. A single particle of the alloy showed the discharge capacity of 280[mAh/g], the value being 90[%] of the theoretical capacity. Data were compared with that of the composite film consisting of the alloy particles and a polymer binder, which is more practical form for Ni-MH batteries. Additionally, pulverization of the alloy particles are directly observed. Compared with the conventional composite film electrodes, the single particle measurements using the microelectrode gave more detailed, true information about the hydrogen storage alloy.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.20 no.2
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• pp.45-49
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• 2006

Electrochemical hydrogenation/dehydrogenation properties were studied for a single particle of a Mm-based(Mm : minh metal) hydrogen storage alloy($MmNi_{3.55}Co_{0.75}Mn_{0.4}Al_{0.3}$) for fuel cell and Ni-MH batteries. A carbon fiber microelectrode was manipulated to make electrical contact with an alloy particle, and the potential-step experiment was carried out to determine the apparent chemical diffusion coefficient of hydrogen atom($D_{app}$) in the alloy. Since the alloy particle we used here was a dense, conductive sphere, the spherical diffusion model was employed for data analysis. $D_{app}$ was found to vary the order between $10^{-9}\;and\;10^{-10}[cm^2/s]$ over the course of hydrogenation and dehydrogenation process. Compared with the conventional composite film electrodes, the single particle measurements using the microelectrode gave more detailed, true information about the hydrogen storage alloy.